-
Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
- IC(max): 30 to 500 milliamps
- VCEO: 300 volts
- VCBO: 300 volts
- fT: 50 MHz
-
Supplier: Microchip Technology, Inc.
Description: The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25mV of ground or positive supply. The low impedance, high-current driver outputs swing a 1000pF
- Transistor Type: MOSFET
-
Supplier: ROHM Semiconductor GmbH
Description: 2SCRC41C is a transistor for high-voltage amplifier. Complementary is the 2SARA41C/2SA1579U3.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
-
-
Supplier: ROHM Semiconductor GmbH
Description: 2SARA41C is a transistor for high-voltage amplifier. Complementary is the 2SCRC41C/2SC4102U3
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
- Package Type: SOT23
-
Supplier: ROHM Semiconductor GmbH
Description: 2SCRC41CHZG is a transistor for high-voltage amplifier. Complementary is the 2SARA41C HZG
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
-
Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistor, High Voltage for Video Output, 300 V Collector to Emitter Voltage
-
Supplier: ROHM Semiconductor GmbH
Description: 2SC4102U3 is a transistor for high-voltage amplifier. Complementary is the 2SARA41C/2SA1579U3.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
-
Supplier: Nexperia B.V.
Description: NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK Features and benefits High thermal power dissipation capability Suitable for high
- Transistor Grade / Operating Range: Automotive
- Polarity: Complementary
- Features: Other
-
Supplier: Nexperia B.V.
Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET
- V(BR)DSS: 20 volts
- IDSS: 3,500 milliamps
- VGS(off): 0.7 volts
- rDS(on): 0.48 ohms
-
Supplier: Nexperia B.V.
Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Very low threshold voltage for
- V(BR)DSS: 30 volts
- IDSS: 590 milliamps
- VGS(off): 0.7 volts
- rDS(on): 0.9 ohms
-
Supplier: Infineon Technologies AG
Description: NPN Silicon Switching Transistors Summary of Features High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906...
- IC(max): 200 milliamps
- VCEO: 40 volts
- VCBO: 60 volts
- fT: 300 MHz
-
Supplier: Infineon Technologies AG
Description: PNP Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Complementary types: BCW66... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q102 Potential Applications For general AF applications
- IC(max): 800 milliamps
- VCEO: 45 volts
- VCBO: 60 volts
- fT: 200 MHz
-
Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q107 Potential Applications For AF
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
-
Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistor, PNP Transistor Type, 120 V Collector to Emitter Voltage +200 °C maximum operating temperature Complementary silicon epitaxial planer transistors designed for use as drivers for high power transistors in general
-
Supplier: Nexperia B.V.
Description: NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High efficiency leading to
- Polarity: Complementary
- Features: Other
-
Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistors, Audio Power Amplifier, NPN Transistor Type High breakdown voltage: V (BR) CEO ≥ 80 V Min. High current: IC ≥ 500 mA Low saturation voltage
-
Supplier: Win Source Electronics
Description: (TJ) Case / Package: 8-SOIC Maximum Power Dissipation: 2W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 310pF @ 15V Maximum Rds On at Id,Vgs: 30 mOhm @ 6A, 10V Is
- V(BR)DSS: 30 volts
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
- Polarity: Complementary, P-Channel
-
Supplier: Allied Electronics, Inc.
Description: Silicon Complementary Transistors, High Voltage, Medium Power Switch, NPN Transistor Type Usable DC current gain to 2.0 ADC Designed for high-speed switching and linear amplifier applications for high-voltage Operational amplifiers, switching
-
Supplier: Win Source Electronics
Description: Package: 6-TSOP Maximum Power Dissipation: 1.1W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.4A, 2.5A Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.8nC @ 4.5V Max Input Capacitance: 320pF @ 10V Maximum Rds On at Id,Vgs: 60 mOhm @ 3.4A, 4.5V Is
- V(BR)DSS: 20 volts
- PD: 1,100 milliwatts
- TJ: -55 to 150 C
- Polarity: Complementary, P-Channel
-
Supplier: Win Source Electronics
Description: Package: 6-TSOP Maximum Power Dissipation: 1.15W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 8.5nC @ 10V Max Input Capacitance: 240pF @ 15V Maximum Rds On at Id,Vgs: 75 mOhm @ 3.1A, 10V Alternative Parts (Cross-Reference):
- V(BR)DSS: 30 volts
- PD: 1,150 milliwatts
- TJ: -55 to 150 C
- Polarity: Complementary, P-Channel
-
Supplier: Win Source Electronics
Description: Operating: -55°C to 150°C (TJ) Case / Package: 6-TSOP Maximum Power Dissipation: 1.15W Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.4A, 2.3A Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 285pF @ 15V Maximum Rds
- V(BR)DSS: 30 volts
- PD: 1,150 milliwatts
- TJ: -55 to 150 C
- Polarity: Complementary, P-Channel
-
Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP
- hfe: 50 to 100
- VCEO: 36 volts
- VCBO: -40 to 40 volts
- IC(max): -20 to 20 milliamps
-
Supplier: Linear Systems
Description: The LS26VPS is a P-Channel Single JFET voltage-controlled resistor. It has a drain-source resistance that is controlled by a DC bias voltage (VGS) applied to a high impedance gate terminal. Minimum RDS of 20 Ω occurs when VGS = 3.0V. As VGS approaches the pinch-off
- Polarity: Complementary, N-Channel, P-Channel
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other High Intensity models, please see our High Intensity Marketing Page. Technical Features Model Specific Adjustment Type: Potentiometer Connection Type: Cabled, 6ft. Housing Type: Rectangular Family Specific Supply Voltage: 12 to 24 VDC Polarity
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
- Body Shape: Rectangular
-
Supplier: Universal Semiconductor, Inc.
Description: high voltage bi-directional DMOS switches with low power CMOS logic to provide efficient control of high voltage analog signals. This HIVIC incorporates high voltage level shifters to interface the high voltage switches to the CMOS logic. The
- PD: 2,000 milliwatts
- TJ: -55 to 125 C
- Number of Transistors in the Chip: 1 to 8
- Transistor Type: CMOS, Power BJT Transistors
-
Supplier: Microchip Technology, Inc.
Description: TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The
- VGS(off): 3 volts
- Polarity: Complementary
- Transistor Type: MOSFET
- Features: Other
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other High Intensity models, please see our High Intensity Marketing Page. Technical Features Model Specific Adjustment Type: Potentiometer Connection Type: Cabled, 6ft. Housing Type: Rectangular Family Specific Supply Voltage: 12 to 24 VDC Polarity
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
- Body Shape: Rectangular
-
Supplier: Tri-Tronics Company, Inc.
Description: For documentation and other High Intensity models, please see our High Intensity Marketing Page. Technical Features Model Specific Adjustment Type: Potentiometer Connection Type: Cabled, 6ft. Housing Type: Rectangular Family Specific Supply Voltage: 12 to 24 VDC Polarity
- Operating Temperature: -40 to 158 F
- Electrical Output: Current
- Features: DC Powered, Photoelectric Sensors
- Body Shape: Rectangular
-
Supplier: Littelfuse, Inc.
Description: complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages
- Features: Other
- Polarity: P-Channel
- Package Type: TO-247
-
Supplier: Littelfuse, Inc.
Description: complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages
- Features: Other
- Polarity: P-Channel
-
Supplier: Richardson RFPD
Description: semiconductor (LVCMOS)-/low voltage transistor-to-transistor logic (LVTTL)- compatible controls.
- Frequency Range: 1,800 to 3,800 MHz
- Insertion Loss: 0.42 dB
- Isolation (Port to Port): 27 dB
- Switching Speed: 0.00065 ms
-
Supplier: Microchip Technology, Inc.
Description: shoot-through current, matched rise and fall times, and short propagation delays which make them ideal for high switching frequency applications. The MCP14A0153/4/5 family of devices offer enhanced control with Enable functionality. The active-high Enable pins can be driven low to
- Transistor Type: MOSFET
-
Supplier: Microchip Technology, Inc.
Description: MIC4223/MIC4224/MIC4225 driver and enable inputs feature TTL and CMOS logic-level thresholds which are independent of supply voltage. Each driver features a dedicated active-high enable input which is internally pulled high to VDD through 100kΩ, allowing the pins to be left
- Transistor Type: MOSFET
-
Supplier: Richardson RFPD
Description: values on the PWM and DISABLE pins. The ADuM4221-2 operates with an input supply ranging from 2.5 V to 6.5 V, providing compatibility with lower voltage systems. The logic level voltage at the input PWM pin controls the VOA and VOB outputs. The driver has a DISABLE input pin that, if
- Category: Development Board
-
Supplier: ValueTronics International, Inc.
Description: measurements. The PXI-4130 also includes a utility channel that can source either current or voltage with 16-bit setpoint and measurement resolution. You can use this output, which provides up to 6 V and 1 A, as a complementary power source to the SMU channel. Applications such as
Find Suppliers by Category Top
Featured Products Top
-
Electric mobility needs batteries that unlock more value from every cell, not simply more battery capacity. With the ONE Inverter concept, engineering specialist IAV and semiconductor specialist Nexperia are exploring a new approach to high-voltage architectures. The concept enables more (read more)
Browse Transistors Datasheets for Nexperia B.V. -
High-power electronic systems require semiconductor solutions that can handle high voltage, high current, and demanding operating conditions while maintaining efficiency and reliability. Engineers need power devices with low energy losses and stable switching performance to (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Win Source Electronics -
Overview of RF High?Speed Rotary Joint Slip Ring Our high?speed radio frequency rotary joints are precision coaxial microwave components designed for 360° uninterrupted rotating equipment, solving stable high?frequency signal transmission challenges in rotating (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
Transition Frequency (fT): 300MHz, excellent for high-frequency applications Complementary PNP Transistor: SMMBT3906LT3G for push (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
turn-off losses, 175?°C operation, & a 5?μs short-circuit withstand time. Designed for hard-switching, high-voltage, high-frequency applications, they are ideal for industrial inverters, servo drives, small motor drives, welding, induction heating, & ESS. (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
; Natively compatible with special signals including 1553B aviation bus, RS232, temperature sensor and heating load, ideal for high-end test equipment; Wide voltage range covering 0\380V AC / 0\540V DC, high insulation withstand voltage for long-hour continuous operation; Dual (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd.
More Information Top
Indicates content that may require registration and/or purchase.
-
High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform
State of the art fully integrated, high performance power management devices require complementary high voltage transistors in the power amplifier output stage working at switching frequencies of several MHz.
-
High Voltage Tolerant Level Shifters and DCVSL in Standard Low Voltage CMOS Technologies
There are four solutions that allow to process higher voltages then the technology voltage limit (HV) [1]: (i) to modify a low voltage technology to provide a minimum of two high voltage compatible complementary transistors [2].
-
Active cancellation of the common‐mode voltage produced by a voltage‐source PWM inverter
A variable voltage source satisfying such conditions can be implemented in the form of a push-pull emitter follower using high withstand voltage complementary transistors .
-
Roadmap Differentiation and Emerging Trends in BCD Technology
The high cut-off frequency of the high voltage complementary DMOS transistors together with the reduced parasitic substrate capacitances are available features to improve performance of video amplifiers for monitors.
-
A 350V complementary LSI process using shallow junctions
In this process, complementary high - voltage transistors (BVbco>350V) are fabricated by employing shallow .
-
An Integrated 8 MHz Video Output Amplifier
~~~~dg Table 4 lists the process flowchart and thus shows that an ll-mask technology offers high voltage complementary MOS transistors and bipolar transis- tors at the cost of three: extra masks (PS, PI, CE) with respect to .
-
A 200-V high-voltage amplifier using a parasitic field-oxide transistor for voltage feedback
Abstract—A 200-V high-voltage amplifier with a 50-kHz bandwidth is built in a 10-V trench-isolated CMOS process with complementary high - voltage transistors .
-
A 12V complementary RF LDMOS technology developed on a 0.18/spl mu/m CMOS platform
To satisfy these requirements RF complementary transistors with high voltage and high current capability together with low output capacitance are needed.
-
NTE Electronics, Inc. - NTE175 - Transistors & Modules - Bipolar Transistors - Allied Electronics
Silicon Complementary Transistors , High Voltage , Medium Power Switch, NPN Transistor Type .
-
NTE Electronics, Inc. - NTE2501 - Transistors & Modules - Bipolar Transistors - Allied Electronics
Silicon Complementary Transistor , High Voltage for Video Output, 300 V Collector to Emitter Voltage .