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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: PNP Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary types: BFN26 (NPN) Pb
- Package Type: SOT23, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Nexperia B.V.
Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching
- Package Type: Other
- Polarity: N-Channel, P-Channel
- Transistor Grade / Operating Range: Automotive
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25mV of ground or positive supply. The low impedance, high-current driver outputs swing a 1000pF
- Transistor Type: MOSFET
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Supplier: Nexperia B.V.
Description: NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q Features and benefits High thermal power dissipation capability
- Package Type: Other
- Polarity: Complementary
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Supplier: Nexperia B.V.
Description: Suitable for high temperature applications up to 175 °C Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified Applications Motor control Power management Load switch Linear mode
- Package Type: Other
- Polarity: Complementary
- Transistor Grade / Operating Range: Automotive
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Supplier: Nexperia B.V.
Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching
- Package Type: Other
- Polarity: N-Channel, P-Channel
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor GmbH
Description: 2SARA41C is a transistor for high-voltage amplifier. Complementary is the 2SCRC41C/2SC4102U3
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: 2SCRC41C is a transistor for high-voltage amplifier. Complementary is the 2SARA41C/2SA1579U3.
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: 2SCRC41CHZG is a transistor for high-voltage amplifier. Complementary is the 2SARA41C HZG
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: 2SARA41CHZG is a transistor for high-voltage amplifier. Complementary is the 2SCRC41C HZG.
- Package Type: SOT23, Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 180389-AO4606 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel Complementary FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete
- Package Type: SOT3, Other
- Polarity: P-Channel, Complementary
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 009776-AO6604 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range
- Package Type: SOT3, Other
- Polarity: P-Channel, Complementary
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 096682-AO6601 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Family Name: AO6601 Categories: Discrete Semiconductor Products
- Package Type: SOT3, Other
- Polarity: P-Channel, Complementary
- Transistor Type: MOSFET
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Supplier: Linear Systems
Description: The LS26VNS N-Channel Single JFET voltage controlled resistor has a drain-source resistance that is controlled by a DC bias voltage (VGS) applied to a high impedance gate terminal. Minimum RDS of 14 O occurs when VGS = -1.0V. As VGS approaches the pinch-off voltage of
- Polarity: N-Channel, P-Channel, Complementary
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Supplier: Linear Systems
Description: The LS26VPS is a P-Channel Single JFET voltage-controlled resistor. It has a drain-source resistance that is controlled by a DC bias voltage (VGS) applied to a high impedance gate terminal. Minimum RDS of 20 O occurs when VGS = 3.0V. As VGS approaches the pinch-off
- Polarity: N-Channel, P-Channel, Complementary
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP
- Package Type: Other
- Polarity: Complementary
- Transistor Grade / Operating Range: Military, Other
- Transistor Type: General Purpose BJT
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 009775-AO6602L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range
- Package Type: SOT3, Other
- Polarity: P-Channel, Complementary
- Transistor Type: MOSFET
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Supplier: Universal Semiconductor, Inc.
Description: The USH5008 is a High Voltage Integrated Circuit (HIVIC) designed for switching high voltage analog signals. This HIVIC can be used in ultrasound imaging systems and in other applications that require flexible high voltage switching controlled by internal
- Package Type: Other
- Polarity: Complementary
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: Power BJT Transistors, CMOS
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Supplier: Universal Semiconductor, Inc.
Description: The USH5010 is an 8-channel high voltage analog switch which utilizes Universal's Proprietary full oxide isolation process for switching high voltage analog signals. This device can be used in ultrasound imaging systems and other high voltage applications
- Package Type: FPAK, Other
- Polarity: Complementary
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: Power BJT Transistors, CMOS
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Supplier: Tri-Tronics Company, Inc.
Description: Complementary NPN or PNP output transistors sink/source up to 100mA Response Time 800 microseconds - Beam Make or Beam Break Hysteresis: 400 millivolts - maximum sensitivity and resolution Light Immunity:
- Body: Rectangular
- Operating Temperature: -40 to 158 F
- Output: Current
- Technology: Through Beam
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Supplier: Tri-Tronics Company, Inc.
Description: Complementary NPN or PNP output transistors sink/source up to 100mA Response Time 800 microseconds - Beam Make or Beam Break Hysteresis: 400 millivolts - maximum sensitivity and resolution Light Immunity:
- Body: Rectangular
- Operating Temperature: -40 to 158 F
- Output: Current
- Technology: Through Beam
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Supplier: RS Components, Ltd.
Description: A range of specialized bipolar transistors from Magnatec/Semelab which includes complementary Darlington Power Transistors and High-power, High-current TO3 devices. Transistor Type = PNP Maximum DC Collector Current = 3 A Maximum Collector Emitter
- Package Type: Other
- Polarity: PNP
- Transistor Type: General Purpose BJT
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Supplier: Littelfuse, Inc.
Description: a complementary pair for a number of applications requiring Totem Pole outputs. Advantages: High power density Easy to mount Space savings Low RDS(on) HDMOS process Rugged Polysilicon Gate Cell structure Avalanche rated Low package inductance International standard packages
- Package Type: Other
- Polarity: P-Channel
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Supplier: RS Components, Ltd.
Description: A range of specialized bipolar transistors from Magnatec/Semelab which includes complementary Darlington Power Transistors and High-power, High-current TO3 devices. Transistor Type = PNP Maximum Continuous Collector Current = 10 A Maximum Collector Emitter
- Number of Transistors in the Chip: 1
- Package Type: TO-220, Other
- Polarity: PNP
- VCBO: 100 volts
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Supplier: RS Components, Ltd.
Description: A range of specialized bipolar transistors from Magnatec/Semelab which includes complementary Darlington Power Transistors and High-power, High-current TO3 devices. Transistor Type = NPN Maximum DC Collector Current = 500 mA Maximum Collector Emitter
- IC(max): 500 milliamps
- PD: 2800 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: Richardson RFPD
Description: handling capability of 39 dBm for continuous wave signals and 39 dBm average and 49 dBm peak for long-term evolution (LTE) signals. The ADRF5347 draws a current of 2.5 mA on the positive supply of +5.0 V and 0.4 mA on the negative supply of -3.4 V. The device employs low voltage
- Actuator Type: SP4T, Other
- Frequency Range: 1800 to 3800 MHz
- Insertion Loss: 0.4200 dB
- Isolation (Port to Port): 27 dB
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Supplier: Richardson RFPD
Description: held high, shuts the device off regardless of the input on the channels. The input on the PWM pin generates the complementary outputs, VOA and VOB. The ADuM4221-2 provides operation with voltages of up to 35 V on the secondary side. The EVAL-ADuM4221-2EBZ has a provision for the
- Category: Development Board
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Supplier: Microchip Technology, Inc.
Description: breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Additional Features Low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
- Package Type: SOT23, SOT89
- Polarity: N-Channel
- VGS(off): 2 volts
- rDS(on): 15 ohms
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Supplier: ValueTronics International, Inc.
Description: channel that can source either current or voltage with 16-bit setpoint and measurement resolution. You can use this output, which provides up to 6 V and 1 A, as a complementary power source to the SMU channel. Applications such as transistor characterization that require
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Electric mobility needs batteries that unlock more value from every cell, not simply more battery capacity. With the ONE Inverter concept, engineering specialist IAV and semiconductor specialist Nexperia are exploring a new approach to high-voltage architectures. The concept enables more (read more)
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The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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Transition Frequency (fT): 300MHz, excellent for high-frequency applications Complementary PNP Transistor: SMMBT3906LT3G for push (read more)
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In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
turn-off losses, 175?°C operation, & a 5?μs short-circuit withstand time. Designed for hard-switching, high-voltage, high-frequency applications, they are ideal for industrial inverters, servo drives, small motor drives, welding, induction heating, & ESS. (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
; Natively compatible with special signals including 1553B aviation bus, RS232, temperature sensor and heating load, ideal for high-end test equipment; Wide voltage range covering 0\380V AC / 0\540V DC, high insulation withstand voltage for long-hour continuous operation; Dual (read more)
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The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
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High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform
State of the art fully integrated, high performance power management devices require complementary high voltage transistors in the power amplifier output stage working at switching frequencies of several MHz.
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High Voltage Tolerant Level Shifters and DCVSL in Standard Low Voltage CMOS Technologies
There are four solutions that allow to process higher voltages then the technology voltage limit (HV) [1]: (i) to modify a low voltage technology to provide a minimum of two high voltage compatible complementary transistors [2].
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Active cancellation of the common‐mode voltage produced by a voltage‐source PWM inverter
A variable voltage source satisfying such conditions can be implemented in the form of a push-pull emitter follower using high withstand voltage complementary transistors .
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Roadmap Differentiation and Emerging Trends in BCD Technology
The high cut-off frequency of the high voltage complementary DMOS transistors together with the reduced parasitic substrate capacitances are available features to improve performance of video amplifiers for monitors.
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A 350V complementary LSI process using shallow junctions
In this process, complementary high - voltage transistors (BVbco>350V) are fabricated by employing shallow .
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An Integrated 8 MHz Video Output Amplifier
~~~~dg Table 4 lists the process flowchart and thus shows that an ll-mask technology offers high voltage complementary MOS transistors and bipolar transis- tors at the cost of three: extra masks (PS, PI, CE) with respect to .
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A 200-V high-voltage amplifier using a parasitic field-oxide transistor for voltage feedback
Abstract—A 200-V high-voltage amplifier with a 50-kHz bandwidth is built in a 10-V trench-isolated CMOS process with complementary high - voltage transistors .
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A 12V complementary RF LDMOS technology developed on a 0.18/spl mu/m CMOS platform
To satisfy these requirements RF complementary transistors with high voltage and high current capability together with low output capacitance are needed.
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NTE Electronics, Inc. - NTE175 - Transistors & Modules - Bipolar Transistors - Allied Electronics
Silicon Complementary Transistors , High Voltage , Medium Power Switch, NPN Transistor Type .
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NTE Electronics, Inc. - NTE2501 - Transistors & Modules - Bipolar Transistors - Allied Electronics
Silicon Complementary Transistor , High Voltage for Video Output, 300 V Collector to Emitter Voltage .