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Description: EV INVERTER CONTROL; IGBT & SIC
- Operating Temperature: -40 to 257 F
- Product Type: H Bridge
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Supplier: Semikron, Inc.
Description: modules are used in a variety of applications offering key technologies like sintering, spring or pressfit contacts for easy and fast assembly. Different topologies like CIB (converter inverter brake), halfbridge, H-bridge, 6-pack and 3-level are available in order to cover almost all
- Configuration: Half-Bridge, H-Bridge, Six-Pack
- Output Current: 4 to 1400 amps
- Output Voltage: 600 to 3300 volts
- Technology: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules IGBT XPT Module H Bridge
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules IGBT Module H Bridge
- Transistor Type: IGBT
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Supplier: Utmel Electronic Limited
Description: IGBT H-BRIDGE 72A 600V E2PACK
- Transistor Type: IGBT
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, POWER DRIVER MODULE IGBT, H-BRIDGE CONFIGURATION, MOD IPM, L-SERIES, 600 V, 75 A POWER, 2500 VDC VOLTAGE-ISOLATION, CHASSIS MOUNT. FREE 2 YEAR RADWELL WARRANTY
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules SLIMM Nano 3A 600V 3-Phase IGBT Bridge
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules SLLIMM-nano small low-loss intelligent molded module IPM, 3 A, 600 V 3-phase IGBT inverter bridge
- Transistor Type: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT 4 fast Low voltage drop Low tail current Low leakage current Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low
- Configuration: Full Bridge
- Output Current: 150 amps
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT 4 fast Low voltage drop Low tail current Low leakage current Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low
- Configuration: Full Bridge
- Output Current: 25 amps
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package
- Configuration: Full Bridge
- Output Current: 100 amps
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package
- Configuration: Full Bridge
- Output Current: 200 amps
- Technology: IGBT
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Supplier: Richardson RFPD
Description: Qdual3 1200 V 800 A Half Bridge IGBT Module for CAV 1200V 800A Half-bridge module in QDual3
- Transistor Type: IGBT
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Description: IGBT H BRIDGE 600V 30A I4PAK5
- Transistor Type: IGBT
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Description: IGBT H BRIDGE 1200V 33A I4PAK5
- Transistor Type: IGBT
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Description: IGBT H BRIDGE 600V 40A I4PAK5
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT H BRIDGE 1200V 50A I4PAK5
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT H BRIDGE 1200V 63A SMPD
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT H BRIDGE 1200V 32A SMPD
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT H BRIDGE 1200V 43A SMPD
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Full bridge Trench + Field Stop IGBT4 Power module
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Full bridge Trench + Field Stop IGBT4 Power Module
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: Full bridge High speed Trench + Field Stop IGBT4 Power module
- Package Type: Other
- Transistor Type: IGBT
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Supplier: ODG (Origin Data Global)
Description: IGBT H BRIDGE 600V 40A I4PAK5
- Package Type: Other
- Polarity: Other
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1341472-APTGF150H120 G Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Package: Bulk Standard Package: 1 Power - Max: 961 W Configuration: Full Bridge Inverter Input: Standard IGBT Type: NPT Voltage
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1350276-APTGF25H120T 1G Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Package: Bulk Standard Package: 1 Power - Max: 208 W Configuration: Full Bridge Inverter Input: Standard IGBT Type: NPT Voltage
- Package Type: SOT3
- Transistor Type: IGBT
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Supplier: DigiKey
Description: Half Bridge (3) Driver AC Motors IGBT
- IC Package Type: DIP, Other
- Operating Temperature: 150 C
- Packing Method: Tube
- Supply Voltage: 12.5 to 17.5 volts
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Supplier: Win Source Electronics
Description: Manufacturer: Powerex Inc. Win Source Part Number: 866887-CM75DU-12H Series: IGBTMOD™ Operating Temperature Range: -40°C ~ 150°C (TJ) Features: IGBT Module - Half Bridge 600 V 75 A 310 W Chassis Mount Module Package: Bulk Package: Module Mounting
- Package Type: SOT3, Other
- Transistor Type: IGBT
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Supplier: Win Source Electronics
Description: Manufacturer: Powerex Inc. Win Source Part Number: 866860-CM150DU-12H Series: IGBTMOD™ Operating Temperature Range: -40°C ~ 150°C (TJ) Features: IGBT Module - Half Bridge 600 V 150 A 600 W Chassis Mount Module Package: Bulk Package: Module Mounting
- Package Type: SOT3, Other
- Transistor Type: IGBT
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Supplier: DigiKey
Description: Half Bridge (3) Driver AC Motors IGBT 23-SIP
- IC Package Type: SIP, Other
- Operating Temperature: -40 to 150 C
- Packing Method: Bulk
- Supply Voltage: 12.5 to 17.5 volts
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Supplier: DigiKey
Description: Half Bridge (3) Driver AC Motors IGBT 23-SOP
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Packing Method: Tube
- Supply Voltage: 13.5 to 16.5 volts
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Supplier: DigiKey
Description: Half Bridge (3) Driver AC Motors IGBT 29-SIP
- IC Package Type: Other
- Operating Temperature: -40 to 150 C
- Packing Method: Bulk
- Supply Voltage: 12.5 to 17.5 volts
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Supplier: Infineon Technologies AG
Description: supplies (UPS) Designers who used this product also designed with IDP15E65D2 | Silicon Diodes TDB6HK180N16RR_B11 | Bridge Rectifier & AC-Switches IKZ50N65EH5 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Fuji Electric Corp. of America
Description: power supplies and solar inverters. The new “XS” series Discrete IGBT Ideal for 3-level inverters, bridge inverters, and PFC circuits. TO-247 3-pin and 4-pin kelvin packages are available.
- IC(max): 35 amps
- Package Type: Other
- Switching Speed: 20 kHz
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: -Channel Power MOSFET CY62157EV30LL-45ZSXI | Asynchronous SRAM FP50R12KT4 | IGBT modules IR2113S | Gate driver ICs CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller CY62148EV30LL-55SXIT | Asynchronous SRAM CY
- Package Type: Other
- Transistor Grade / Operating Range: Industrial
- Transistor Type: IGBT
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The pulsed power supply using igbt topology for csns injection system bump magnet
We will use the IGBT H bridges in series and parallel to realize the high power and high frequency operation[2][3][4][5].
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Operation of the tokamak ISTOKK in a multicycle alternating flat-top plasma current regime
Scheme of the IGBT H bridge power supply. . and horizontal B fields adjusted to maximum current flatness.
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Power supply system of EAST superconducting tokamak
realized by 24 set of H IGBT bridge circuit in parallel, its rated parameter is 800V/±5kA, and the response time of voltage is 100 s.
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Mu2e AC Dipole 300 kHz and 5.1 MHz Tests and Comparison of Nickel-Zinc Ferrites
The excitation is supplied through a 6:1 impedance adapter and insulation transformer directly connected to the IGBT H Bridge output and loaded with a High Voltage DC Power Supply.
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Digital fast control system for reduction of local magnetic field errors
Each power converter is based on a IGBT H bridge able to supply 550V maximum dc voltage with 100A peak cur- rent; the IGBTs are controlled by using the double PWM modulation with a resulting frequency of 20 kHz on the out…
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High frequency inverter for resistance spot welding applications with increased power cycling capability
In this work has been shown, that the use of an RC clamp- ing circuit in an H bridge IGBT based inverter for pulsed high power applications such as resistance spot welding can greatly improve the lifetime of the IGBT modules.
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High efficiency power converters for battery energy storage systems
The verification test was carried out by taking four steps, an H bridge IGBT unit test, Inductor load current test, downscaled grid model test, and real scale distribution line test.
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New generation polyphase resonant converter-modulators for the Korean Atomic Energy Research Institute
The complete electrical system block diagram is shown in Figure I which includes the substation / SCR regulator, self- healing capacitor energy storage banks, IGBT H - bridge switching networks, and the resonant transformer and resonant rectification networks.
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Subject Index
Huibin Zhu, + , T-IA Sep-Oct 01 1383-1393 IGBT H - bridge switching converters, full-digital control board.
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Control of Power Inverters in Renewable Energy and Smart Grid Integration
+ VDC uf L u PWM IGBT H - bridge C i io CB AC bus vo .