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Supplier: Utmel Electronic Limited
Description: IGBT H-BRIDGE 72A 600V E2PACK
- IC(max): 72 amps
- PD: 225,000 milliwatts
- TJ: -40 to 150 C
- Number of Transistors in the Chip: 1
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Supplier: Microchip Technology, Inc.
Description: IGBT 4 fast Low voltage drop Low tail current Low leakage current Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature monitoring
- Output Current: 150 amps
- Configuration: Full Bridge
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT 3 fast Low voltage drop Low leakage current Low switching losses Kelvin emitter for easy drive Low stray inductance Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Internal thermistor for temperature
- Output Current: 200 amps
- Configuration: Full Bridge
- Technology: IGBT
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Supplier: Newark, An Avnet Company
Description: IGBT/MOSFET DRIVER, H-BRIDGE, 6A, SOIC16; Driver Configuration:Half Bridge; Peak Output Current:6A; Supply Voltage Min:6.5V; Supply Voltage Max:25V; Driver Case Style:SOIC; No. of Pins:16Pins; Input Delay:-; Output Delay:-; OperatingRoHS Compliant: Yes
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Supplier: DigiKey
Description: Half Bridge (3) Driver AC Motors IGBT 23-SOP
- Supply Voltage: 13.5 to 16.5 volts
- Operating Temperature: -40 to 150 C
- Features: Other
- Packing Method: Tube
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules IGBT Module H Bridge
- Features: IGBT
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Supplier: ODG (Origin Data Global)
Description: EV INVERTER CONTROL; IGBT & SIC
- Features: Linear Regulator, Other
- Package Type: SOIC / SOP
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Supplier: Richardson RFPD
Description: Full bridge High speed Trench + Field Stop IGBT4 Power module
- Features: IGBT, Other
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1341472-APTGF150H120G Category: Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules Package: Bulk Standard Package: 1 Power - Max: 961 W Configuration: Full Bridge Inverter Input: Standard IGBT Type: NPT Voltage - Collector Emitter
- VCES: 1,200 volts
- Features: IGBT
- Package Type: SOT3
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Supplier: Semikron, Inc.
Description: IGBT modules for maximum performance SEMIKRON offers IGBT (insulated-gate bipolar transistor) modules in SEMITRANS, SEMiX, SKiM, MiniSKiiP and SEMITOP packages in different topologies, current and voltage ratings. Starting from 4A to 1400A in voltage classes from 600V to 1700V. The
- Output Voltage: 600 to 3,300 volts
- Output Current: 4 to 1,400 amps
- Configuration: H-Bridge, Half-Bridge, Six-Pack
- Technology: IGBT
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: SLLIMM-nano small low-loss intelligent molded module IPM, 3 A, 600 V 3-phase IGBT inverter bridge Product overview: STGIPN3H60-H from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component
- PD: 8,000 milliwatts
- TJ: -40 C
- Features: IGBT
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, POWER DRIVER MODULE IGBT, H-BRIDGE CONFIGURATION, MOD IPM, L-SERIES, 600 V, 75 A POWER, 2500 VDC VOLTAGE-ISOLATION, CHASSIS MOUNT. FREE 2 YEAR RADWELL WARRANTY
- Features: IGBT
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Supplier: DigiKey
Description: IGBT Module NPT Full Bridge Inverter 1200V 200A 961W Chassis Mount SP6
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: IGBT H BRIDGE 600V 40A I4PAK5
- TJ: -55 to 150 C
- Features: IGBT, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Powerex Inc. Win Source Part Number: 866887-CM75DU-12H Series: IGBTMOD™ Operating Temperature Range: -40°C ~ 150°C (TJ) Features: IGBT Module - Half Bridge 600 V 75 A 310 W Chassis Mount Module Package: Bulk Package: Module Mounting: Chassis Mount Part Status: Obsolete
- TJ: -40 to 150 C
- Features: IGBT, Other
- Package Type: SOT3
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Description: EV INVERTER CONTROL; IGBT & SIC
- Operating Temperature: -40 to 257 F
- Product Type: H Bridge
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Description: IGBT H BRIDGE 600V 40A I4PAK5
- Output Power: 125 watts
- Packing Method: Bulk Pack
- Features: IGBT, Other
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT H BRIDGE 1200V 50A I4PAK5
- Output Power: 200 watts
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric’s Discrete IGBTs are used in applications such as UPS, power conditioning subsystems, communication equipment, servers, and EV chargers. By applying the technology we cultivated in our latest 7th generation IGBT module, the new “XS” series has been able to significantly
- VCES: 600 volts
- IC(max): 50 amps
- Switching Speed: 20 kHz
- TJ: 175 C
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Supplier: Infineon Technologies AG
Description: EasyPACK™ 2B 650 V, 40 A 3-level NPC1 full-bridge IGBT module with CoolSiC™ Schottky diode 650V, PressFIT Contact technology and TRENCHSTOP™ 5 H5. Summary of Features CoolSiC™ Schottky diode gen 5 Increased blocking voltage capability up to 650 V Low switching losses Benefits Compact
- VCES: 650 volts
- VCE(on): 1.4 volts
- IC(max): 40 amps
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: N-Channel Power MOSFET IDW40G120C5B | CoolSiC™ Schottky Diodes IKW75N65EL5 | IGBT discretes IKZ75N65ES5 | IGBT discretes IKZ75N65EH5 | IGBT discretes IDW40G65C5 | CoolSiC™ Schottky Diodes IDP15E65D2 | Silicon Diodes TDB6HK180N16RR_B11 | Bridge Rectifier & AC-Switches
- VCE(on): 1,200 volts
- Switching Speed: 10 to 50 kHz
- tr: 39 ns
- tf: 27 ns
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Insulated Gate Bipolar Transistors (IGBT) - Power - IGBT - IGBT Modules - FP50R06W2E3 -- FP50R06W2E3Supplier: Infineon Technologies AG
Description: EasyPIM™ 2B 600 V, 50 A IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and NTC. Also available as variation with PressFIT mounting technology: FP50R06W2E3_B11 Summary of Features Low Switching Losses Trench IGBT 3 VCEsat with positive temperature coefficient Low
- VCES: 600 volts
- VCE(on): 1.45 volts
- IC(max): 50 amps
- Features: IGBT, Other
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Supplier: Infineon Technologies AG
Description: The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation. The innovative and small package is
- VCES: 750 volts
- VCE(on): 1.2 volts
- IC(max): 900 amps
- Transistor Grade / Operating Range: Automotive
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1052548-CM600DU-24NFH Category: Discrete Semiconductor Products>Transistors - IGBTs - Modules Series: IGBTMOD™ Package: Bulk Standard Package: 1 Power - Max: 1550 W Configuration: Half Bridge Input: Standard Voltage - Collector Emitter Breakdown (Max): 1200 V
- VCES: 1,200 volts
- TJ: -40 to 150 C
- Features: IGBT
- Package Type: SOT3
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor Easy paralleling High speed switching Low switching losses Clip-in, reliable mechanical connection, qualified for wave soldering Convex shaped substrate for superior thermal
- Output Voltage: 1,200 volts
- Output Current: 40 amps
- Configuration: H-Bridge
- Technology: IGBT
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Supplier: ODG (Origin Data Global)
Description: POWER MODULE H-BRIDGE 15V 10A
- Technology: IGBT
- Features: Other / Specialty Technology
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Supplier: Richardson RFPD
Description: H-Bridge POW-R-PAK™ IGBT Assembly 200 Amperes/1200 Volts. The Powerex POW-R-PAK™ is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: SLLIMM nano 2nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge Product overview: STGIPQ3H60T-HL from STMicroelectronics is a Motor Driver IC for embedded motor control, robotics, automation equipment, haptic feedback, pumps, fans, and industrial motion systems. It is useful for
- Operating Temperature: -40 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: HALF BRIDGE DRIVER, INVERTING, H Product overview: SG1626J from Microchip Technology is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing
- Peak Output Current: 3 amps
- Rise Time: 30 ns
- Operating Temperature: -55 to 125 C
- Driver Type: Dual Gate Driver (Half-bridge)
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The pulsed power supply using igbt topology for csns injection system bump magnet
We will use the IGBT H bridges in series and parallel to realize the high power and high frequency operation[2][3][4][5].
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Operation of the tokamak ISTOKK in a multicycle alternating flat-top plasma current regime
Scheme of the IGBT H bridge power supply. . and horizontal B fields adjusted to maximum current flatness.
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Power supply system of EAST superconducting tokamak
realized by 24 set of H IGBT bridge circuit in parallel, its rated parameter is 800V/±5kA, and the response time of voltage is 100 s.
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Mu2e AC Dipole 300 kHz and 5.1 MHz Tests and Comparison of Nickel-Zinc Ferrites
The excitation is supplied through a 6:1 impedance adapter and insulation transformer directly connected to the IGBT H Bridge output and loaded with a High Voltage DC Power Supply.
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Digital fast control system for reduction of local magnetic field errors
Each power converter is based on a IGBT H bridge able to supply 550V maximum dc voltage with 100A peak cur- rent; the IGBTs are controlled by using the double PWM modulation with a resulting frequency of 20 kHz on the out…
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High frequency inverter for resistance spot welding applications with increased power cycling capability
In this work has been shown, that the use of an RC clamp- ing circuit in an H bridge IGBT based inverter for pulsed high power applications such as resistance spot welding can greatly improve the lifetime of the IGBT modules.
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High efficiency power converters for battery energy storage systems
The verification test was carried out by taking four steps, an H bridge IGBT unit test, Inductor load current test, downscaled grid model test, and real scale distribution line test.
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New generation polyphase resonant converter-modulators for the Korean Atomic Energy Research Institute
The complete electrical system block diagram is shown in Figure I which includes the substation / SCR regulator, self- healing capacitor energy storage banks, IGBT H - bridge switching networks, and the resonant transformer and resonant rectification networks.
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Subject Index
Huibin Zhu, + , T-IA Sep-Oct 01 1383-1393 IGBT H - bridge switching converters, full-digital control board.
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Control of Power Inverters in Renewable Energy and Smart Grid Integration
+ VDC uf L u PWM IGBT H - bridge C i io CB AC bus vo .