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Supplier: Microchip Technology, Inc.
Description: IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-dens ity Switch Mode Power Supply (SMPS)
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-dens ity Switch Mode Power Supply (SMPS)
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-dens ity Switch Mode Power Supply (SMPS)
- Technology: IGBT
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Supplier: Microchip Technology, Inc.
Description: IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switching frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-dens ity Switch Mode Power Supply (SMPS)
- Technology: IGBT
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Supplier: Infineon Technologies AG
Description: Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. Summary of Features Positive
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. Summary of Features Positive
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: , Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: , Coes, Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power supplies|•UPS|•Three phase inverters for
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: , Cres|•Latch-up free|•Fast & soft inverse CAL diodes|•Isolated copper baseplate using DBC Direct Copper Bonding Technology without hard mould|•Large clearance (10 mm) and creepage distances (20 mm)|Typical Applications:|•Switc hing (not for linear use)|•Switched mode power
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses for frequencies between 25kHz and 70kHz. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn-off losses. Summary of Features Positive
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: 600 V, 30 A IGBT discrete with anti-parallel diode in TO-247 package Hard-switching 600 V, 30 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Littelfuse, Inc.
Description: Developed using our proprietary XPT™ thin-wafer technology and state-of-the-art Trench IGBT process, these devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under
- Transistor Type: IGBT
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Supplier: ROHM Semiconductor GmbH
Description: RGWSX2TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
- PD: 288000 milliwatts
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor GmbH
Description: RGWS60TS65 is a IGBT with low collector - emitter saturation voltage, suitable for PFC, Solar converters, Mid to high switching frequency converters. The RGWS series features high-speed switching, contributing to higher efficiency of applications.
- Package Type: TO-247, Other
- Transistor Grade / Operating Range: Commercial
- Transistor Type: IGBT
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Supplier: Fuji Electric Corp. of America
Description: significantly improve the trade-off between on-voltage and switching loss compared with previous High-Speed W Series products. This enhancement contributes to energy saving and miniaturization of industrial equipment with a switching frequency of approximately 20 kHz, which is
- IC(max): 85 amps
- Package Type: Other
- Switching Speed: 20 kHz
- TJ: 175 C
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Supplier: Littelfuse, Inc.
Description: packages Optimized for low conduction & switching losses Ultra fast anti-parallel diode (optional) Avalanche rated Square RBSOA Low cost alternative to MOSFETs in the 300V range Drive simplicity with MOS Gate turn-on High frequency IGBT Applications: Power inverters UPS Motor
- IC(max): 60 amps
- Package Type: TO-247, Other
- Structure: PT
- VCE(on): 2.1 volts
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Description: MORNSUN hybrid integrated IGBT drivers are designed with a built-in isolation DC/DC converter. They can realize the safety electrical isolation between the power semiconductor and the control circuit with the high-speed optical coupling. The series features switching frequency
- IC Package Type: SIP
- Number of Output Channels: 1
- Output Voltage: 15 volts
- Supply Voltage: 15 volts
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Supplier: Yaohua Electric Group
Description: @IGBT high frequency soft switch transform high efficiency and reliability @MCU controlled technology, multi-function in one machine, convenient to use @foot pedal to control current is optional @passive power factor correction makes pow
- Equipment Type: Welding Equipment
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1250660-S-8541A16FN- IGBT2G Category: Integrated Circuits (ICs)>PMIC - Voltage Regulators - DC DC Switching Controllers Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Output Type: Transistor Driver Function: Step
- Configuration / Function: Other
- Duty Cycle: 100
- IC Package Type: SSOP, Other
- Operating Temperature: -40 to 85 C
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Supplier: Rochester Electronics
Description: FZ800R12KS4_B2 - High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
- Package Type: Other
- Transistor Type: Power MOSFET, IGBT
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Supplier: Nexperia B.V.
Description: . This hard?-?switching 600 V, 40 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications. Features and benefits Collector current (IC) rated at 40 A Low conduction and switching losses
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: of industry-standard package styles . Direct mount on heat sink . Choice of PT, NPT, and Trench IGBT technologies . Low-VCE(on) IGBT . Switching frequency from 1 kHz to 150 kHz. Rugged transient performance. High isolation voltage up to 3500 V. 100 % lead (Pb)-free and
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Vincotech (Germany) GmbH
Description: Neutral Point Clamped Topology (I-Type) Kelvin Emitter for improved switching performance Temperature sensor Easy paralleling High speed switching Low switching losses Enables high switching frequencies Low inductive package
- Configuration: Other / Specialty Configuration
- Output Current: 1200 amps
- Output Voltage: 1200 volts
- Technology: IGBT
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Supplier: RS Components, Ltd.
Description: Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching
- IC(max): 13 amps
- PD: 90000 milliwatts
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Thor Power Corporation
Description: to 375Vdc.The 375Vdc bus supplies power to a three-phase, six switch IGBT inverter. The power section of the inverter is an Intelligent Power Module utilizing 5th generation IGBTs with a 600V/50A rating (6th generation has been designed). The power module also contains
- AC Input Phase: Three Phase
- Application Categories: High Frequency Drive
- Drive Type: AC Synchronous Motor, AC Servo / Brushless Motor
- Features: Other
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Supplier: RS Components, Ltd.
Description: Power drivers for MOSFET and IGBT in low side, high side, and half-bridge circuits. Controller Type = Synchronous Rectifier Number of Outputs = 1 Maximum Switching Frequency = 100 kHz Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.9 x 3.9 x 1.57mm
- IC Package Type: SOIC / SOP, Other
- Switching Frequency (fsw): 100 kHz
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Supplier: RS Components, Ltd.
Description: Power drivers for MOSFET and IGBT in low side, high side, and half-bridge circuits. Controller Type = Synchronous Rectifier Number of Outputs = 1 Maximum Switching Frequency = 100 kHz Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = 4.9 x 3.9 x 1.57mm
- IC Package Type: SOIC / SOP, Other
- Regulator Category: Switching Regulator, Other
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Supplier: Coilcraft CPS
Description: • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For 1011 and 2011, isolation between secondaries is 500 Vdc.
- Cooling: Dry-type / Air Cooled
- Maximum Primary Voltage Rating: 1500 volts
- Maximum Secondary Voltage Rating: 1500 volts
- Mounting / Form Factor: PC / PCB Mount
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Supplier: Mitsubishi Electric Power Products, Inc.
Description: Design: Single-Phase, On-Line Double Conversion Topology Power Rating: 6, 8, 10, 12kVA Voltage Input: 208V-120V, 240V-120V Output: 208V-120V, 240V-120V (Extra Wide Input Voltage and Frequency Window) Design Features: * IGBT
- Features: Application Software Included?, Automatic Restart?, Automatic Shutdown?, Bypass Switch?, Hot-swappable Batteries?
- Input Voltage Range: 120 to 240 volts
- Interfaces: Serial
- Mounting: Mounts On / In Device Protected
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Supplier: SOCOMEC
Description: optimization (sources and distribution), thanks to high performance IGBT rectifier. • Battery configuration can be optimized, thanks to a very wide DC range. • Extended battery life and performance: - long life battery, - very wide input voltage and frequency acceptance, without
- Features: Bypass Switch?, LCD or LED Display?
- Input Voltage Range: 400 volts
- Mounting: Tower Type
- Operating Temperature: 32 to 104 F
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Supplier: Semikron, Inc.
Description: High switching frequencies and increased power output and efficiency SEMIKRON offers Hybrid Silicon Carbide Power Modules in MiniSKiiP, SEMITRANS, SEMiX 3 Press-Fit and SKiM63/93. Latest IGBT technology is combined with SiC Schottky diodes of the leading suppliers to increase
- Configuration: Half-Bridge, Six-Pack
- Output Current: 150 to 600 amps
- Output Voltage: 1200 volts
- Technology: Si/SiC
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Supplier: Excelitas Technologies Corp.
Description: The -40 kV, 12.5 mA 500 Watt power supply incorporates a high frequency quasi-resonant switch-mode design utilizing an IGBT based power inverter with a completely air insulated high voltage section. The fault tolerant design of this system offers open and short circuit
- AC Input Voltage: 108 to 123 volts
- DC Output Current: 0.0125 amps
- DC Output Voltage: 0.0 to 40000 volts
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Supplier: Littelfuse, Inc.
Description: switch mode power supplies (SMPS) and DC to DC converters Free-wheeling diode or boost diode in converters and motor control circuits Anti-parallel diode for high frequency switching devices such as IGBT Uninterruptible Power Supplies (UPS) Inductive heating and melting
- IF: 20000 mA
- IFSM: 125 amps
- Package Type: TO-220, Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: Littelfuse, Inc.
Description: power supplies (SMPS) and DC to DC converters Free-wheeling diode or boost diode in converters and motor control circuits Anti-parallel diode for high frequency switching devices such as IGBT Uninterruptible Power Supplies (UPS) Inductive heating and melting Ultrasonic cleaners
- Diode Applications: Rectifier Diode
- IF: 60000 mA
- RoHS Compliant: Yes
- VF: 2 volts
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rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125°C and rated current. The RoHS-compliant modules feature 650V collector to emitter voltages, continuous collector (read more)
Browse Power Supplies Datasheets for New Yorker Electronics Co., Inc. -
conduction and switching losses are high. In contrast, SiC MOSFETs high-power semiconductors have much lower conduction and switching losses. As shown in Figure 1, SiC MOSFETs have a lower voltage drop than an equivalent IGBT when used as a switch. The RDS(on), the channel resistance of a saturated Si (read more)
Browse Power Supplies Datasheets for EA Elektro-Automatik Inc. -
across the capacitor increases, the capacitance of the device increases. These capacitors also display very low series resistance (ESR) and very low series inductance (ESL), allowing these capacitors to switch extremely fast. These capacitors target high frequency applications. The EPCOS (read more)
Browse Capacitors Datasheets for Mouser Electronics -
.Snubber capacitors A snubber capacitor is a capacitor that is connected to a large-current switching node for the purpose of reducing the parasitic inductance of electric wiring. Typical applications IGBT Snubbering (read more)
Browse Capacitors Datasheets for Shenzhen Weidy Industrial Development Co., Ltd. -
associated with IGBT switching on 480 volt systems and protects the entire motor-drive system. G7 drive performance makes it the ideal drive for high performance speed, torque, or position control applications. Several control modes are provided. In open loop vector mode, the latest flux observer (read more)
Browse AC Motor Drives Datasheets for Yaskawa America, Inc. - Drives Division
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Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
The demand for portable low cost welding machines, especially in developing countries, is increasing. In the Manual Metal Arc and Tungsten Inergt Gas types, in power range from 1,5kW up to 5kW, discrete IGBTs and MOSFETs are broadly used. Mostly, these machines use hard switching current mode PWM
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Manufacturing Science and Technology, ICMST2011 Complete Document
SPWM switching frequency should be considered the choice of various factors, this design actually used in SPWM switching frequency, i.e. IGBT switching frequency 18MHz, this is a compromise choice.
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Experimental results from droop compensation for the high voltage converter modulators
Output voltage as a function of IGBT switching frequency with a constant DC bus of +/- 1000 V.
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Unity power factor boost converter with phase shifted parallel IGBT operation for medium power applications
Since operating frequency is ilicreased by integer multiples of IGBT switching frequency , the Same core size for the boost inductor can be used to transfer larger amounts of power at the expense of additional power switchingelements and a simple pulse separation circuit.
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ISA MOTOR DRV - Motors and Drives - A Practical Technology Guide
This condition can be exaggerated by higher IGBT switch frequencies and the lack of output snubber circuits.
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Status and Needs of Power Electronics for Photovoltaic Inverters
• Flexible for multiple system parallel operation • DC bus voltage: 750 V ± 50 V • IGBT switching frequency : 5 kHz, equivalent inverter switching frequency: 10 kHz • Inverter efficiency: > 98.5 % @ 400 kW • Minimized switching ripples and …
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Novel Power Electronics Systems for Wind Energy Applications: Final Report; Period of Performance: August 24, 1999 -- November 30, 2002
The converter operated with an IGBT switching frequency of 50 kHz; the asynchronous control update rate of the microcontroller was approximately 10 kHz.
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https://uwspace.uwaterloo.ca/bitstream/handle/10012/3729/MASc%20Thesis%20-%20Banerjee%2c%202008.pdf?sequence=1
The dominant harmonics at Eagle Pass were 1.26 kHz (21st , IGBT switching frequency ), .
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Very high performance AC/DC/DC converter architecture for traction power supplies
The IGBTs switching frequency has been here kept limited, at 3.3kHz for our application case, in order to keep limited the semiconductor losses and, in order to verify the possibility to reduce the size of the input inductor (Ls) two operation …
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Unsymmetrical gate voltage drive for high power 1200V IGBT4 modules based on coreless transformer technology driver
Finally, the maximum IGBT switching frequency , fs, for a specific driver design can be calculated using formula (9) as function of Pdis and module parameters .
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High-Frequency Leakage Currents in Medium Power Adjustable Speed Drives supplied from IT Mains
In drive applications the IGBT switching frequency is usually equal to 3 - 4.5 kHz.