Products & Services
See also: Categories | Featured Products | Technical Articles | More Information-
Supplier: Kyocera Corporation
Description: We offer power modules adopting diverse packaging technologies in industrial fields requiring highly-reliable equipment and for the in-vehicle equipment market. As the effective use of electric power has become increasingly important, Kyocera offers power modules for general-purpose
- Technology: IGBT
-
Supplier: Radwell International
Description: IGBT MODULE, EASYPIM 1B HOUSING, PRESSFIT CONTACT TECHNOLOGY, 1200 V MAX., 15 AMPS. FREE 2 YEAR RADWELL WARRANTY
- Transistor Type: IGBT
-
Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, IGBT MODULE, DISCRETE SEMICONDUCTOR, RECTIFIER DIODE, SI TECHNOLOGY, 1.2 KV REVERSE, 230 AMPS, SMD/SMT MOUNTING, TD142 PACKAGE. FREE 2 YEAR RADWELL WARRANTY
- Transistor Type: IGBT
-
-
Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Transistor Type: IGBT
-
Supplier: Microchip Technology, Inc.
Description: six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. The Ultra Fast
- Technology: IGBT
-
Supplier: Microchip Technology, Inc.
Description: six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
- Technology: IGBT
-
Supplier: Microchip Technology, Inc.
Description: six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. The Ultra Fast
- Technology: IGBT
-
Supplier: Microchip Technology, Inc.
Description: six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and field stop. All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode. Using
- Technology: IGBT
-
Supplier: Infineon Technologies AG
Description: The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features Low turn-off losses Short tail current Positive temperature coefficient Easy paralleling
- Transistor Type: IGBT
-
Supplier: Infineon Technologies AG
Description: 1200 V power IGBT chip The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology Low switching losses Positive temperature coefficient Easy paralleling
- Transistor Type: IGBT
-
Supplier: Semikron, Inc.
Description: modules are used in a variety of applications offering key technologies like sintering, spring or pressfit contacts for easy and fast assembly. Different topologies like CIB (converter inverter brake), halfbridge, H-bridge, 6-pack and 3-level are available in order to cover almost all
- Configuration: Half-Bridge, H-Bridge, Six-Pack
- Output Current: 4 to 1400 amps
- Output Voltage: 600 to 3300 volts
- Technology: IGBT
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products- Transistors IGBTs- IGBT Modules Series: C Package: Tray Product Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Power - Max: 1450 W Operating Temperature: -40°C ~ 125°C
- Package Type: SOT3
- Transistor Type: IGBT
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products -Transistors- IGBTs IGBT Modules Series: C Package: Tray Product Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type:
- Package Type: SOT3
- Transistor Type: IGBT
-
Supplier: Infineon Technologies AG
Description: The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology Low switching losses Soft turn-off Positive temperature coefficient Easy paralleling
- Transistor Type: IGBT
-
Supplier: Infineon Technologies AG
Description: 1200 V power IGBT chip The TRENCHSTOP™ IGBT combines the unique TRENCHSTOP™ and Fieldstop technology and is a benchmark in the industry. Summary of Features 1200V TRENCHSTOP™ and Fieldstop technology Low switching losses Positive temperature coefficient Easy paralleling
- Transistor Type: IGBT
-
Supplier: Richardson RFPD
Description: Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders
- Transistor Type: IGBT
-
Supplier: Richardson RFPD
Description: Trench IGBT Module|•Trench = Trenchgate technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•Elect ronic welders|•AC inverter drives|•UPS
- Transistor Type: IGBT
-
Supplier: Richardson RFPD
Description: SPT IGBT Module|•SPT = Soft-Punch-Through technology|•Vce(sat) with positive temperature coefficient|•High short circuit capability, self limiting to 6 x Ic|Typical Applications:|•AC inverter drives|•UPS|•Electro nic welders at fsw up to 20 kHz
- Transistor Type: IGBT
-
Supplier: Win Source Electronics
Description: Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Package: Tray Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device
- Package Type: SOT3
- Transistor Type: IGBT
-
Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors IGBTs IGBT Modules Series: EconoDUAL™ 3 Package: Tray Product Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Mounting
- Package Type: SOT3
- Transistor Type: IGBT
-
Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules EconoDUAL 3 1700V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology
- Transistor Type: IGBT
-
Supplier: Littelfuse, Inc.
Description: As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally
- Transistor Type: IGBT
-
Supplier: Fuji Electric Corp. of America
Description: Fuji Electric’s Discrete IGBTs are used in applications such as UPS, power conditioning subsystems, communication equipment, servers, and EV chargers. By applying the technology we cultivated in our latest 7th generation IGBT module, the new “XS” series has been able to
- IC(max): 85 amps
- Package Type: Other
- Switching Speed: 20 kHz
- TJ: 175 C
-
Supplier: Accuris
Description: Surface Mounting Technology - Discrete Devices - Part 9: Insulated-Gate Bipolar Transistors (IGBTs)
-
Supplier: EPCOS AG
Description: Isolation transformers with high withstand voltages are required in the IGBT gate drive power supplies of motor inverters for xEVs. The products in this series successfully combine a shift to high coupling (low leakage) with a shift to completely automatic winding by employing a new structure
- Package Type: Surface Mount Technology (SMT)
-
Supplier: Littelfuse, Inc.
Description: As a pioneer of Press-Pack IGBT technology, we are able to offer a range of class leading devices with voltage ratings of 1.7kV (900V DC link), 2.5kV (1.25kV DC link), 3.3kV (1.8kV DC link), 4.5kV (2.8kV DC link), and 6.5kV (3.6kV DC link). The construction of these devices is totally
- Package Type: Other
- TJ: 125 C
- VCE(on): 3.7 volts
- VCES: 4500 volts
-
Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Package Type: Other
- Polarity: N-Channel
- VCE(on): 2 volts
-
Supplier: Rochester Electronics
Description: High Speed IGBT in NPT-technology
- Package Type: Other
- Transistor Type: IGBT
-
Supplier: Vincotech GmbH
Description: Kelvin Emitter for improved switching performance Neutral Point Clamped Topology (I-Type) Temperature sensor High efficiency in hard switching and resonant topologies High speed switching Low gate charge Clip-in, reliable mechanical connection, qualified for wave soldering Convex shaped substrate
- Configuration: Other / Specialty Configuration
- Output Current: 75 amps
- Output Voltage: 650 volts
- Technology: IGBT, Other / Specialty Technology
-
Supplier: Yaohua Electric Group
Description: @adopts IGBT module technology @suitable for welding metal plate with thickness above 1.0mm @soft-switching technology bring higher efficiency and more stable performance @both output current and voltage could be adjustable, could work with
- Equipment Type: Welding Equipment
-
Supplier: Nexperia B.V.
Description: The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third?-?generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This
- Package Type: Other
-
Supplier: Wolfspeed
Description: Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device achieves a remarkable 10m? Rds(on) and is capable of 900V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements. C3M MOSFET
- Package Type: Other
-
Supplier: RS Components, Ltd.
Description: Vishayâ??s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device
- Package Type: Other
- Transistor Type: IGBT
-
Supplier: ODG (Origin Data Global)
Description: SMART POWER MODULE 30A SPM32-AA
- Technology: IGBT, Other / Specialty Technology
Find Suppliers by Category Top
Featured Products Top
-
Our AlSiC Pin Fin Coolers for IGBT offer superior thermal management, designed to keep IGBT modules cool and enhance operational stability. These coolers are ideal for addressing the high-heat challenges faced in power electronics and automotive applications. Superior (read more)
Browse CPU Coolers Datasheets for ToneCooling Technology Co., Ltd -
In high-power electronics, excessive heat is one of the main causes of performance degradation and device failure. IGBT modules, widely used in inverters and power systems, generate significant heat during switching and must be kept within strict temperature (read more)
Browse CPU Coolers Datasheets for ToneCooling Technology Co., Ltd -
Nexperia extend the 650 V IGBT portfolio with the release of 15 & 30 A discrete IGBTs in TO220-FP & D2PAK packages. Based on Nexperia’s third-generation technology with carrier stored trench-gate and field-stop (FS) structures, these devices offer optimized (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Nexperia B.V. -
VSA-H series power amplifier adopt the latest IGBT technology and MCU DSP FPGA architecture design, and use advanced digital control strategies to ensure high conversion efficiency and high security for each module and the entire system. I will secure it. Single power module is designed (read more)
Browse Instrumentation Amplifiers Datasheets for ECON Technologies Co.,Ltd -
Semiconductors Fuji Electric’s semiconductors provide energy efficiency with our state-of-the-art IGBT technology creating more reliability for your application. Our IGBT (read more)
Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
Reduced dead cycle time Dynamic temperature profiling Eliminates need for skid plates Uses proven Inductotherm IGBT technology (read more)
Browse Induction Heaters Datasheets for Inductotherm Group -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
control system and IGBT intelligent voltage regulation technology, real-time sampling of input voltage, millisecond level response to grid fluctuations, and calibration of unstable mains power to a stable reference voltage; Backend Transformer Unit: Using DYN11 group isolation transformers, the (read more)
Browse Voltage Regulators Datasheets for Shenzhen Xingkerong Technology Co., Ltd -
Solution: SyntriX AHF™ Active harmonic filters measure system harmonics and produce anti-harmonics to cancel them. Traditional active filters utilize Insulated Gate Bipolar Transistor (IGBT) based technology (read more)
Browse Harmonic Filters Datasheets for MTE Corporation -
mechanical stress makes them ideal for MEMS sensors, LED headlights, 5G base stations, and EV IGBT modules. Without effective thermal management, LED headlights can lose up to 30% brightness within 3 years, 5G base stations face performance degradation, and EV IGBT modules risk (read more)
Browse Industrial Heaters Datasheets for Suntech Applied Materials (Hefei) Co.,Ltd
Conduct Research Top
-
Gate Drive Optocoupler Provides Robust Insulation in IGBT Destructive Tests
Avago Technologies gate drive optocouplers are used extensively to drive IGBTs in applications such as motor drives and solar inverters. Optocouplers are a proven technology to provide reinforced galvanic insulation for high voltage protection between IGBTs and control circuits. They are also used
-
Meeting the Demand for Smaller and More Reliable Power Modules with the X Series RC-IGBTs
design, fabrication, and packaging technologies to improve on power density, thermal management, and efficiency, all while maintaining a bottom line in cost. Traditional insulated-gate bipolar transistors (IGBTs) have been ubiquitously leveraged in power electronics applications, but users looking
-
Modern Induction Cooking Demands Compact and Efficient Solutions
Discrete IGBTs are the preferred power switch for modern inverter-based induction cooking products due to their inherent efficiency. As energy costs continue to rise and consumer demand for ever-smaller cooking solutions increases, IGBT technology has to evolve to meet these demands.
-
Adjustable Speed Drives as Applied to Centrifugal Pumps
this article was originally published is in AC technology. The dominant method of AC control is by PWM inverters, particularly with the advent of the high speed Insulated Gate Bipolar Transistors (IGBTs). This will be the only drives technology to be considered in this revisited analysis
-
EiceDRIVER TM and CoolMOS TM CFD2 Join for High Efficiency in Refrigeration
Home appliances, which run 24h and 7 days a week, have high efficiency requirements. Therefore, the use of MOSFETs is preferred over IGBTs. Modern MOSFET technologies based on the superjunction principle are nevertheless difficult to control in motor drive applications. This article describes
-
Design Considerations in Using the Inverter Gate Driver Optocouplers for Variable Speed Motor Drives - White Paper (.pdf)
Inverter Gate Driver optocouplers are ideally suited for IGBT and MOSFET applications for variable speed motor drives. Their high output peak currents coupled with high voltage safety standards certified galvanic insulation, very high common mode noise rejection isolation, solid state device level
More Information Top
Indicates content that may require registration and/or purchase.
-
ISA MOTOR DRV - Motors and Drives - A Practical Technology Guide
IGBT Technology .
-
Power losses in PWM-VSI inverter using NPT or PT IGBT devices
Abstract-This paper investigates the power losses for two different IGBT technologies (Non Punch Through and Punch Through) for use in PWM-VSI inverters in order to choose the right device technology for a given application.
-
Power losses in PWM-VSI inverter using NPT or PT IGBT devices
Abstract: This paper investigatesthe power losses for two different IGBT technologies (Non Punch Through and Punch Through) for use in PWM-VSI inverters in order to choose the right device technology for a given application.
-
Power Electronics Semiconductor Devices
IGBT technology ...
-
Smart IGBT's for Advanced Distributed Ignition Systems
Fig. 10 Comparison between bipolar and IGBT power switches Although even in IGBT technology there are experiments to integrate additional functions and components monolithically with the actual power switch, this does not constitute a trend.
-
FY2010 Oak Ridge National Laboratory Annual Progress Report for the Power Electronics and Electric Machinery Program
Completed a design for a 55 kW ZCSI based on the CF-trans-qZSI using first generation RB- IGBT technology .
-
Smart Power/power integrated circuits, technology and applications: Proceedings
The reUabUity of the IGBT technology is excellent.
-
Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications: Assessing the Technical Needs for Utility Applications
These were designed to replace IGBTs but were not successful because of advances in IGBT technology .
-
4500 V SPT+ IGBT optimization on static and dynamic lossesProject supported by the National Major Science and Technology Special Project of China (No. 2011ZX02...
1Jiangsu R&D Center for Internet of Things, Wuxi 214135, China 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 3Junshine CAS- IGBT Technology Co., Ltd, Wuxi 214135, China .
-
SPT+-IGBT characteristics and optimization
The continuing innovation of IGBT technology satisfies the development of power systems.