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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: MOSFET, Power MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: HEXFET Power MOSFET Product overview: IRF7493 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1186887-IRF1312 Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 746289-IRF7331 Manufacturer Homepage: www.irf.com Reference case: SOP-8 Reference Date Code: 07+ Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1186881-IRF1302 Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1187120-IRF642 Manufacturer Homepage: www.fairchildsemi.com Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Industrial, Portable Devices,
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Infineon Technologies AG
Description: BSC117N08NS5 | N-Channel Power MOSFET IAUT300N10S5N015 | Automotive MOSFET BSC016N06NS | N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IRF7329 | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET
- rDS(on): 0.005 ohms
- TJ: 150 C
- VGS(off): 1.35 to 2.25 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: Infineon Technologies AG
Description: N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IRF7842 | N-Channel Power MOSFET IAUT300N10S5N015 | Automotive MOSFET BSC016N06NS |
- rDS(on): 0.199 ohms
- QG: 38 nC
- TJ: 150 C
- VGS(off): 8 volts
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Supplier: Infineon Technologies AG
Description: Applications 48 V intermediate bus converter (IBC) Consumer electronics Edge computing Mobile devices and smartphones -30V P-Channel StrongIRFET™ Power MOSFET in a SO-8 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability.
- rDS(on): 0.0119 ohms
- TJ: 150 C
- VGS(off): -2.4 to -1.3 volts
- Features: MOSFET, Other, Power MOSFET
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Description: Integrated Circuits (ICs) - Transistors - MOSFETs
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: Power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRFR5410 | P-Channel Power MOSFET BSC123N08NS3 G | N-Channel Power MOSFET BSC016N06NS |
- rDS(on): 0.0121 ohms
- TJ: 175 C
- VGS(off): 3 to 5 volts
- Features: MOSFET, Other, Power MOSFET
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Supplier: LCSC Electronics Technology (HK) Limited
Description: D2PAK MOSFETs ROHS
- Features: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET RECOMMENDED ALT 844-IRF830APBF
- Features: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: IRF6726 - 12V-300V N-CHANNEL POW
- V(BR)DSS: 30 volts
- IDSS: 32,000 to 180,000 milliamps
- Packing Method: Bulk Pack
- Features: MOSFET, Other
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: HEXFET POWER MOSFETS
- Features: MOSFET
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Supplier: ODG (Origin Data Global)
Description: IRF8714 - HEXFET POWER MOSFET
- V(BR)DSS: 30 volts
- IDSS: 14,000 milliamps
- PD: 2,500 milliwatts
- TJ: -55 to 150 C
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Supplier: Utmel Electronic Limited
Description: Power Field-Effect Transistor
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Supplier: PUI - Projections Unlimited, Inc.
Description: Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power
- Features: MOSFET
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Supplier: Utmel Electronic Limited
Description: TRENCH_MOSFETS
- V(BR)DSS: 200 volts
- rDS(on): 0.0169 ohms
- PD: 417,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Rochester Electronics
Description: IRF4905SPbF - HEXFET Power MOSFET, Transistor P-Channel Si 55V 74A
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
- Packing Method: Tape Reel
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Supplier: DigiKey
Description: Mosfet Array N and P-Channel 30V 2.5W Surface Mount 8-SO
- Features: Other
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Supplier: Utmel Electronic Limited
Description: Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
- V(BR)DSS: -55 volts
- rDS(on): 0.06 ohms
- QG: 62.99999999999999 nC
- PD: 110,000 milliwatts
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: MOSFET
- Polarity: N-Channel
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: MOSFET
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Supplier: RS Components, Ltd.
Description: Infineon MOSFET IRFS7530TRLPBF
- Features: MOSFET, Other
- Package Type: TO-263
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Supplier: Allied Electronics, Inc.
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
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Supplier: Allied Electronics, Inc.
Description: The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing
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onsemi, Renesas, and many more. Additionally, we stock a large selection of power management, diodes, and protection devices that are commonly used within these same designs. (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
The BSS138PS,115 is a high-performance, dual N-channel logic level enhancement mode Field Effect Transistor (FET) produced by NXP Semiconductors. This compact and efficient MOSFET is designed to meet the stringent requirements of modern electronic circuits, providing designers with a reliable (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Analog Devices' EVAL-ADuM4146WHB1Z is a half bridge gate drive board that allows simple evaluation of the performance of the ADuM4146 when driving advanced Wolfspeed third generation C3M™ silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) and power modules (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
The Analog Devices LTC7893 synchronous boost controller drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100 V. The LTC7893 solves many of the challenges traditionally faced when using Ga (read more)
Browse IC Switching Voltage Regulators Datasheets for DigiKey -
automatically balance leakage currents and manage over-voltage, enabling ultra-low power usage in supercapacitors used in a series stack. The board uses ALD’s SAB MOSFETs to balance the leakage current in each individual supercapacitor cell, even for cells of 3000 Farad (F) or more. The PCB (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink Machine detail? Technology data Name (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
transistor switch’s gate without affecting the load circuit’s operation. The overvoltage protection circuit disconnects the load during the transient event, whereas the voltage clamp continues to power the load but clamps the voltage at a predetermined voltage. Even precision Zener diodes (read more)
Browse Uncategorized Products Datasheets for Advanced Linear Devices, Inc.
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Artificial lighting system design for photosynthetic studies
It consists basically of an inductance (L)and two capacitors (Cl, C,) in series that form a resonant circuit excited by two electronic switches ( power transistors , MOSFET IRF 350 8609).
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An efficient and low-cost computer-controlled programmable duty cycle light-emitting diode pulse generator
High power switching MOSFET transistors , like IRF 510, can be operated directly from integrated circuits.
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Parameter extraction by semiconductor structure elements
Table 5.4 transistor capacities the power - MOSFET IRF 150 capacity .
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Leadless Pacing of the Heart Using Induction Technology: A Feasibility Study
The bipolar short magnetic field pulses are generated by an H-bridge circuit (Institute of Ap- plied Physics, D¨usseldorf, Germany) comprising four MOSFET ( IRF 38055-7P International Recti- fier) power transistors , controlled by a pulse gen- erator (Hewlett-PackardTM model 8015, Palo …
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A variable temperature controller for use with a transfer gas flow heating system and powdered samples
An IRF 641 power MOSFET was used to drive the bipolar transistor passbank.
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Applied Mechatronics
… to use for medium- duty applications are TIP31 npn or TIP32 pnp (TO-220 case) bipolar transistors, and for high-power applications the 2N3055 npn or 2N2955 pnp (TO-3 case) bipolar transistors and the IRF -511(TO-220 case) power MOSFET .
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Optimum semiconductors for power field effect transistors
Figure 1 shows a comparison of the expected behavior of the GaAs FET with three other devices: the IRF 330 (a 4A International Rectifier power MOSFET ) the ZJ499D (a General Electric 100A power Darlington transistor ), and a Field Controlled Thyristor (FCT) device …
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Output Voltage Control by Frequency Regulation in Class-DE Power Amplifier
V. EXPERIMENTAL RESULTS The results of the theoretical analysis have been experi- mentally verified utilizing the Class-DE power amplifier presented in [13] (PO1=265W, fO1=1MHz, ESup=310V, παS1=0.6, QLL=2) with IRF 740 MOSFET transistors ).
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Breakdown walk-in: a new PMOS failure mode in high power BiCMOS applications
[I] F. De Pestel et. al., “Developmentof a Robust 50V 0.35 um Based Smart Power Technologyusing Trench Isolation”, ISPSD … … in high- voltage pLDMOS transistors on thin epitaxial layer” … … degradation in deep submicron MOSFET ’s at IOOC”, IRF ’S 2000,p.
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2nd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2014)
Futurlec, MOSFET Transistors — IRF Series, http://www.futurlec.com/TransMosIRF.shtml 8. IRF3205 datasheet, HEXFET® Power MOSFET.