IRF Power MOSFET

Description: BSC117N08NS5 | N-Channel Power MOSFET IAUT300N10S5N015 | Automotive MOSFET BSC016N06NS | N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IRF7329 | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET

• r_DS(on): 0.005 ohms
• T_J: 150 C
• V_GS(off): 1.35 to 2.25 volts
• Features: MOSFET, Other, Power MOSFET

Description: N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IPB036N12N3 G | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IRF7842 | N-Channel Power MOSFET IAUT300N10S5N015 | Automotive MOSFET BSC016N06NS |

• r_DS(on): 0.199 ohms
• Q_G: 38 nC
• T_J: 150 C
• V_GS(off): 8 volts

Description: N-Channel Power MOSFET IR2110S | Gate driver ICs IRFU5305 | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFR3607 | N-Channel Power

• r_DS(on): 0.039 ohms
• T_J: 150 C
• V_GS(off): 2 to 4 volts
• Features: MOSFET, Other, Power MOSFET

Description: Applications 48 V intermediate bus converter (IBC) Consumer electronics Edge computing Mobile devices and smartphones -30V P-Channel StrongIRFET™ Power MOSFET in a SO-8 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability.

• r_DS(on): 0.0119 ohms
• T_J: 150 C
• V_GS(off): -2.4 to -1.3 volts
• Features: MOSFET, Other, Power MOSFET

Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

• Features: MOSFET, Power MOSFET

Description: MOSFET RECOMMENDED ALT 844-IRF830APBF

• Features: MOSFET

Description: status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs.

• Features: MOSFET

Description: HEXFET POWER MOSFETS

• Features: MOSFET

Description: IRF8714 - HEXFET POWER MOSFET

• V_(BR)DSS: 30 volts
• I_DSS: 14,000 milliamps
• P_D: 2,500 milliwatts
• T_J: -55 to 150 C

Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1186881-IRF1302 Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1186887-IRF1312 Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 746289-IRF7331 Manufacturer Homepage: www.irf.com Reference case: SOP-8 Reference Date Code: 07+ Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Manufacturer: Samsung Win Source Part Number: 1187443-IRF9531 Manufacturer Homepage: www.samsung.com/Products/Semiconductor Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Integrated Circuits (ICs) - Transistors - MOSFETs

• Features: MOSFET

Description: Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB

• V_(BR)DSS: -200 volts
• r_DS(on): 800,000,000 ohms
• Q_G: 29 nC
• P_D: 74,000 milliwatts

Description: TRENCH_MOSFETS

• V_(BR)DSS: 200 volts
• r_DS(on): 0.0169 ohms
• P_D: 417,000 milliwatts
• T_J: -55 to 175 C

Description: D2PAK MOSFETs ROHS

• Features: MOSFET

Description: IRF8714 - HEXFET Power MOSFET

• Features: MOSFET, Other, Power MOSFET
• Packing Method: Tape Reel

Description: Mosfet Array 2 N-Channel (Dual) 20V 7A 2W Surface Mount 8-SO

• Features: Other

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Features: MOSFET
• Polarity: N-Channel

Description: IRF6726 - 12V-300V N-CHANNEL POW

• V_(BR)DSS: 30 volts
• I_DSS: 32,000 to 180,000 milliamps
• Packing Method: Bulk Pack
• Features: MOSFET, Other

Description: Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK

• V_(BR)DSS: -55 volts
• r_DS(on): 0.06 ohms
• Q_G: 62.99999999999999 nC
• P_D: 110,000 milliwatts

Description: MOSFET P-CH 100V 19A TO-220AB

• V_(BR)DSS: -100 volts
• r_DS(on): 0.2 ohms
• P_D: 150,000 milliwatts
• T_J: -55 to 175 C

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Features: MOSFET

Description: Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power

• Features: MOSFET

Description: Infineon MOSFET IRF8714TRPBF

• Features: MOSFET, Other
• Package Type: SO-8

Description: Chip-Set for DC-DC Converters Product overview: IRF7805 from Infineon Technologies is a DC-DC Converter IC for stable power rails, DC-DC conversion, battery-powered electronics, automotive modules, and embedded power management. It is useful for engineers and buyers comparing

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well

Description: High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use | MOSFET N-CH 20V 77A TO-262 Product overview: IRF3706LPBF from Infineon Technologies is a DC-DC Converter IC for stable power rails, DC-DC conversion, battery-powered electronics,

• Operating Temperature: -55 to 175 C
• Features: Other

Description: MOSFET, 40V, 150A, 3.4 MOHM, 42 NC QG, MED CAN Product overview: IRF6613TRPBF from International Rectifier is an Interface Transceiver IC for serial communication, bus conversion, signal driving, receiver stages, and industrial networking. It is useful for engineers and buyers comparing

• T_J: -40 C
• Features: RoHS Compliant
• Device Type: Transceiver

Description: The IRF6645PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing

Description: IRF3710 - N-CHANNEL POWER MOSFET

Description: IRF3710 - N-CHANNEL POWER MOSFET