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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features Low noise amplifier for low current applications Collector design supports 5V supply voltage For oscillators up to 3.5 GHz Low noise figure 1.0 dB at 1.8 GHz Pb-free (RoHS compliant
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose Low Noise Amplifier Ideal for low current operation High breakdown voltage enables operation in automotive applications Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz Small
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB,
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor for low current applications Summary of Features For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz SIEGET® 25 GHz fT - Line Pb-free (RoHS compliant) package Potential Applications Wireless
- Package Type: Other
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Supplier: Nexperia B.V.
Description: NPN transistor in a SC-70; SOT323 plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 30 V). AEC-Q101 qualified Applications Low-noise input stages in audio equipment.
- Package Type: SOT323, Other
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: NPN transistor in a SOT23 plastic package. PNP complements: BCW69 and BCW70. Features and benefits Low current (100 mA) Low voltage (45 V) Low noise. AEC-Q101 qualified Applications General purpose switching and amplification.
- Package Type: SOT23, Other
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V). AEC-Q101 qualified Applications Low noise stages in tape recorders, hi-fi amplifiers and other
- Package Type: SOT323, Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SI TRANSISTOR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE TRANSISTOR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Accuris
Description: Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE SI TRANSISTOR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE TRANSISTOR
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Accuris
Description: Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Low Noise Type 2N2484UE1 JAN, JANTX, JANJ
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Quad NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN LOW NOISE 20V
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT LowNoise Matched NPN Transistor Array
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: NPN Silicon RF Transistor for low noise
- Package Type: Other
- Polarity: NPN
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Supplier: Rochester Electronics
Description: NPN Epitaxial Planar Silicon Transistor Uhf Low-Noise Amplifier, Wide-Band Amplifier
- Polarity: NPN
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Supplier: Radwell International
Description: TRANSISTOR, SMALL SIGNAL, NPN LOW NOISE, TO-92. FREE 2 YEAR RADWELL WARRANTY
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Supplier: Radwell International
Description: TRANSISTOR, NPN, HIGH GAIN, LOW NOISE, TO-92 VARIANT, 4DB, 25V, 0.3W. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low
- Package Type: Other
- Polarity: NPN
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Supplier: Rochester Electronics
Description: NPN RF Transistor for High-Frequency Low Noise
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Military, Other
- Transistor Type: General Purpose BJT
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Supplier: Rochester Electronics
Description: NPN Epitaxial Planar Silicon Transistor Uhf Low-Noise Amplifier, Wide-Band Amplifier Applications
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Manufacturer: Maxim Integrated Win Source Part Number: 702702-MAX2601ESA+T Series: MAX series Packaging: Tape and Reel Mounting Style: SMD Gain: 11.6dB Transistor Type: NPN Frequency - Transition: 1GHz Categories: Discrete Semiconductor Products Supplier
- Package Type: SOT3
- Polarity: NPN
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Supplier: RS Components, Ltd.
Description: Low Noise RF Transistor NPN 25GHz SOT343 - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: Low Noise SiGe RF Transistor NPN SOT343 - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: Low Noise RF Transistor NPN 12V SOT343 - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: RS Components, Ltd.
Description: Low Noise RF Transistor NPN 8GHz TSFP3 - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Microchip Technology, Inc.
Description: -limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: -limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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In this article, we discuss some important factors that are hard to find when choosing LDO regulators. We also compare actual switching regulators and LDO regulators when we require low noise. We discuss trends in the industry. We end with how high-performance LDO regulators (read more)
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A low noise differential BiCMOS preamplifier for telecommunications
To obtain low noise, special low noise npn transistors ( r b designed t o be low) were used i n the input (ql. 92) and the bias current of the input stage was chosen t o be relatively high (100 p4).
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Updating the HP8542B Automatic Network Analyzer
A low noise NPN transistor across each line to ground acts as a switch.
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