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Supplier: Infineon Technologies AG
Description: High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB,
- Features: Other, Tape Reel
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Supplier: Accuris
Description: Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor Low Noises
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression
- Features: Other, Tape Reel
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Supplier: Accuris
Description: Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Low Noise Type 2N2484UE1 JAN, JANTX, JANJ
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Supplier: Nexperia B.V.
Description: NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V). AEC-Q101 qualified Applications Low noise stages in tape recorders, hi-fi amplifiers and other
- hfe: 420 to 800
- VCEO: 45 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Low Noise
- Transistor Type: Bipolar RF Transistors
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Supplier: RS Components, Ltd.
Description: Low Noise RF Transistor NPN 12V SOT323
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: General Purpose Amplifier, 80 V Collector-Emitter Voltage, 140 V Collector to Base Voltage Silicon planar epitaxial mounted in jedec TO-18 metal case Used for small signal, low noise industrial applications.
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Supplier: ODG (Origin Data Global)
Description: LOW-NOISE TRANSISTOR
- IC(max): 20 milliamps
- VCEO: 9 volts
- Power Gain: 28 dB
- Noise Figure: 0.9 dB
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Supplier: Radwell International
Description: TRANSISTOR, SMALL SIGNAL, NPN LOW NOISE, TO-92. FREE 2 YEAR RADWELL WARRANTY
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Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
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Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25
- hfe: 60 to 100
- VCEO: 36 volts
- VCBO: 36 to 40 volts
- IC(max): 10 to 20 milliamps
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Supplier: Rochester Electronics
Description: NPN RF Transistor for High-Frequency Low Noise
- Polarity: NPN
- Features: Other, Tape Reel
- Package Type: TO-220
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) / TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE Product overview: 2SC4841 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal
- Transistor Type: Bipolar RF Transistors
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Supplier: Allied Electronics, Inc.
Description: Optoisolator, NPN Darlington Transistor Output, Forward Current 60 mA High sensitivity to low input drive current High collector-emitter breakdown voltage No base conncetion for improved noise immunity The NTE3044 consists of a gallium arsenide infrared emitting diode
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Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low
- Noise Figure: 4.6 dB
- Polarity: NPN
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in
- Transistor Type: MOSFET
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Supplier: ValueTronics International, Inc.
Description: the gate's noise margin. The DC-load nulling capability of the P6230 helps to solve this problem. By adjusting the Input Bias/Offset Voltage to the ECL low level or to the termination voltage, the only effect of the probe resistance will be a small decrease in the ECL
- Bandwidth: 1,500 MHz
- Probe Type: Current, Voltage
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Supplier: Win Source Electronics
Description: Win Source Part Number: 957934-MMBTA44 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Strip Standard Package: 30 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 300 mA
- IC(max): 300 milliamps
- TJ: -55 to 150 C
- Power Gain: 50 dB
- Operating Frequency: 50 MHz
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 500 mA, 50V, 250-600 hFE, SOT-323
- VCEO: 50 volts
- IC(max): 500 milliamps
- Transistor Type: General Purpose BJT
- Polarity: NPN
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1357330-ZXT1053AKQTC Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 30 pct. MSL Level: 1 (Unlimited) Mfr: Diodes Incorporated
- IC(max): 5,000 milliamps
- TJ: -55 to 150 C
- Power Gain: 300 dB
- Operating Frequency: 140 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096010-2SC2712-GR Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: NPN Family Name: 2SC2712GR Categories: Discrete Semiconductor Products Status: Active Temperature Range
- VCEO: 50 volts
- IC(max): 150 milliamps
- PD: 150 milliwatts
- TJ: 125 C
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Supplier: Win Source Electronics
Description: Manufacturer: Panasonic Electronic Components Win Source Part Number: 772270-2SD1994ARA Packaging: Tape in Box Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: 3-SIP Power - Max: 1W Transistor Type: NPN Frequency - Transition: 200MHz Part Status:
- IC(max): 0.00009999999999999999 milliamps
- TJ: 150 C
- Power Gain: 120 dB
- Operating Frequency: 200 MHz
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount SMT3
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Utmel Electronic Limited
Description: RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, X Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
- Transistor Type: Bipolar RF Transistors
- Polarity: NPN
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT NPN 150V 0.5A 3-Pin TO-39
- IC(max): 500 milliamps
- PD: 1,000 milliwatts
- TJ: 200 C
- Transistor Type: Darlington
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Supplier: ROHM Semiconductor USA, LLC
Description: 2SCR554P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other, Tape Reel
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Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor, 15 A Collector Current
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Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, NPN, 400 V, 10 MHz, 40 W, 1 A, 30 RoHS Compliant: Yes
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- hfe: 225
- VCEO: 120 volts
- VCBO: 150 volts
- IC(max): 10,000 milliamps
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Supplier: ROHM Semiconductor GmbH
Description: Suitable for the low frequency amplifier.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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Normally Open Output The XS118BLNAL2 has a three-wire NPN normally open output. When no target is detected, the output transistor remains off. When a suitable metallic object enters the sensing zone, the transistor switches on and sinks current toward the 0 (read more)
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-frequency components and smaller transformers, making them more compact. Noise and Ripple Linear Power Supplies: Produce very low noise and ripple, providing clean and stable output. Ideal for sensitive analog (read more)
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A low noise differential BiCMOS preamplifier for telecommunications
To obtain low noise, special low noise npn transistors ( r b designed t o be low) were used i n the input (ql. 92) and the bias current of the input stage was chosen t o be relatively high (100 p4).
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Updating the HP8542B Automatic Network Analyzer
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