-
Supplier: Infineon Technologies AG
Description: High Performance NPN Bipolar RF Transistor Summary of Features High performance low noise amplifier Low minimum noise figure of typ. 0.8 dB @ 1.8 GHz For a wide range of non automotive applications such as WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB,
- Features: Other, Tape Reel
-
Supplier: Accuris
Description: Detail specification for silicon n-p-n planar transistor intended for low level, low noise amplifier applications
-
Supplier: Allied Electronics, Inc.
Description: Silicon NPN Transistor Low Noises
-
-
Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features General purpose low noise amplifier for low voltage, low current applications High ESD robustness, typical 1500V (HBM) Low minimum noise figure 1.1 dB at 1.8 GHz High linearity: output compression
- Features: Other, Tape Reel
-
Supplier: Accuris
Description: Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Low Noise Type 2N2484UE1 JAN, JANTX, JANJ
-
Supplier: Nexperia B.V.
Description: NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. Features and benefits Low current (max. 100 mA) Low voltage (max. 45 V). AEC-Q101 qualified Applications Low noise stages in tape recorders, hi-fi amplifiers and other
- hfe: 420 to 800
- VCEO: 45 volts
- IC(max): 100 milliamps
- PD: 200 milliwatts
-
Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN Low Noise
- Transistor Type: Bipolar RF Transistors
-
Supplier: RS Components, Ltd.
Description: RF Transistor NPN 12V Low Noise SOT23
- Number of Transistors in the Chip: 1
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Features: Other
-
Supplier: Allied Electronics, Inc.
Description: General Purpose Amplifier, 80 V Collector-Emitter Voltage, 140 V Collector to Base Voltage Silicon planar epitaxial mounted in jedec TO-18 metal case Used for small signal, low noise industrial applications.
-
Supplier: ODG (Origin Data Global)
Description: LOW-NOISE TRANSISTOR
- IC(max): 20 milliamps
- VCEO: 9 volts
- Power Gain: 28 dB
- Noise Figure: 0.9 dB
-
Supplier: Radwell International
Description: TRANSISTOR, SMALL SIGNAL, NPN LOW NOISE, TO-92. FREE 2 YEAR RADWELL WARRANTY
-
Supplier: PUI - Projections Unlimited, Inc.
Description: NPN Transistors, Best Suited For Low Noise VHF And VHF Amplifier Mixer and Oscillator Applications.
-
Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
-
Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications
- IC(max): 100 milliamps
- VCEO: 45 volts
- VCBO: 45 volts
- fT: 250 MHz
-
Supplier: TT Semiconductor, Inc.
Description: The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25
- hfe: 60 to 100
- VCEO: 36 volts
- VCBO: 36 to 40 volts
- IC(max): 10 to 20 milliamps
-
Supplier: Rochester Electronics
Description: NPN RF Transistor for High-Frequency Low Noise
- Polarity: NPN
- Features: Other, Tape Reel
- Package Type: TO-220
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) / TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE Product overview: 2SC4841 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal
- Transistor Type: Bipolar RF Transistors
-
Supplier: Renesas Electronics Corporation
Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low
- Noise Figure: 4.6 dB
- Polarity: NPN
- Features: Other
-
Supplier: Allied Electronics, Inc.
Description: Optoisolator, NPN Darlington Transistor Output, Forward Current 60 mA High sensitivity to low input drive current High collector-emitter breakdown voltage No base conncetion for improved noise immunity The NTE3044 consists of a gallium arsenide infrared emitting diode
-
Supplier: Microchip Technology, Inc.
Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in
- Transistor Type: MOSFET
-
Supplier: Microchip Technology, Inc.
Description: current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven. For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in
- Transistor Type: MOSFET
-
Supplier: ValueTronics International, Inc.
Description: the gate's noise margin. The DC-load nulling capability of the P6230 helps to solve this problem. By adjusting the Input Bias/Offset Voltage to the ECL low level or to the termination voltage, the only effect of the probe resistance will be a small decrease in the ECL
- Bandwidth: 1,500 MHz
- Probe Type: Current, Voltage
-
Supplier: Win Source Electronics
Description: Manufacturer: Central Semiconductor Corp Win Source Part Number: 1123650-2N2223A Packaging: Bulk Mounting Style: Through Hole Transistor Type: 2 NPN (Dual) Frequency - Transition: 50MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-78-6 Status: Obsolete
- TJ: -65 to 200 C
- Power Gain: 50 dB
- Output Power: 0.6 watts
- Operating Frequency: 50 MHz
-
Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 60V, 5.2A, SOT-223
- VCEO: 60 volts
- IC(max): 5,200 milliamps
- Transistor Type: General Purpose BJT
- Polarity: NPN
-
Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1037428-2SD2470-TP Current Rating: 5 A Mounting: SMD (SMT) Polarity: NPN Categories: RF Transistors(BJT) Case / Package: SC Alternative Parts (Cross-Reference):
- TJ: 150 C
- Output Power: 0.4 watts
- Operating Frequency: 170 MHz
- Polarity: NPN
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 957934-MMBTA44 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Strip Standard Package: 30 Mounting: SMD (SMT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 300 mA
- IC(max): 300 milliamps
- TJ: -55 to 150 C
- Power Gain: 50 dB
- Operating Frequency: 50 MHz
-
Supplier: Win Source Electronics
Description: (Ic) (Max): 50mA Gain: 21.5dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Supplier Device Package: SOT-143R Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package:
- TJ: -40 to 150 C
- Power Gain: 21.5 dB
- Output Power: 0.45 watts
- Noise Figure: 0.7 dB
-
Supplier: DigiKey
Description: Transistor General Purpose NPN 50V 150mA Surface Mount EMT6
- Polarity: NPN
- Features: Other
-
Supplier: Newark, An Avnet Company
Description: Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 63 RoHS Compliant: Yes
-
Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- hfe: 300
- VCEO: 50 volts
- VCBO: 75 volts
- IC(max): 800 milliamps
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT NPN 40V 1A 3-Pin TO-39
- IC(max): 1,000 milliamps
- PD: 6,250 milliwatts
- TJ: 150 C
- Transistor Type: Darlington
-
Supplier: ROHM Semiconductor GmbH
Description: 2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.
- PD: 10,000 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
-
Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN BIPOLAR
- VCEO: 50 volts
- IC(max): 150 milliamps
- PD: 150 milliwatts
- TJ: -55 to 150 C
-
Supplier: ROHM Semiconductor USA, LLC
Description: Suitable for the low frequency amplifier.
- PD: 500 milliwatts
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
-
Supplier: MACOM
Description: signal and power transistors, JANHC and JANKC qualified chips.
- hfe: 6 to 20,000
- VCEO: 40 to 500 volts
- VCBO: 40 to 700 volts
- IC(max): 1,000 to 20,000 milliamps
Find Suppliers by Category Top
Featured Products Top
-
Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
In this article, we discuss some important factors that are hard to find when choosing LDO regulators. We also compare actual switching regulators and LDO regulators when we require low noise. We discuss trends in the industry. We end with how high-performance LDO regulators (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global) -
Normally Open Output The XS118BLNAL2 has a three-wire NPN normally open output. When no target is detected, the output transistor remains off. When a suitable metallic object enters the sensing zone, the transistor switches on and sinks current toward the 0 (read more)
Browse Automotive Electrical Connectors Datasheets for ERSAELECTRONICS PTE. LTD. -
dissipation effect is better than that of the super copper and aluminum. Ceramics are insulated, resistant to high temperatures, oxidation, acid and alkali, cold and thermal shock, and low coefficient of thermal expansion, ensuring stability in high and low temperatures or other harsh environments (read more)
Browse Aluminum Oxide and Alumina Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
-frequency components and smaller transformers, making them more compact. Noise and Ripple Linear Power Supplies: Produce very low noise and ripple, providing clean and stable output. Ideal for sensitive analog (read more)
Browse Power Supplies Datasheets for Uni-Trend US
More Information Top
Indicates content that may require registration and/or purchase.
-
A low noise differential BiCMOS preamplifier for telecommunications
To obtain low noise, special low noise npn transistors ( r b designed t o be low) were used i n the input (ql. 92) and the bias current of the input stage was chosen t o be relatively high (100 p4).
-
Updating the HP8542B Automatic Network Analyzer
A low noise NPN transistor across each line to ground acts as a switch.
-
5089 datasheet : Datasheets for Electronic Components and Semiconductors
Low Noise Transistor NPN .
-
MMBT2484LT1 datasheet - 60 V, low noise transistor : Datasheets for Electronic Components and Semiconductors
Low Noise Transistor NPN .
-
MMBT5088LT1 datasheet : Datasheets for Electronic Components and Semiconductors
Low Noise Transistor NPN .
-
Page 5. Semiconductor parts with 484 in root number
Low Noise Transistor NPN .
-
NTE Electronics, Inc. - NTE199 - Transistors & Modules - Bipolar Transistors - Allied Electronics
Silicon NPN Transistor Low Noises .
-
Page 2. Semiconductor parts with 947 in root number
NPN silicon low noise transistor .
-
c549 datasheet : Datasheets for Electronic Components and Semiconductors
NPN silicon low noise transistor .
-
Page 12. Semiconductor parts with 390 in root number
NPN Silicon Low Noise Transistor .