-
Supplier: Linear Systems
Description: GENERAL PURPOSE SINGLE P-CHANNEL JFET
- Polarity: P-Channel
-
Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel Reel of 1000
- Transistor Type: JFET
-
Supplier: VAST STOCK CO., LIMITED
Description: JFET P-Channel Switch
- Transistor Type: JFET
-
-
Supplier: Linear Systems
Description: LOW NOISE, LOW CAPACITANCE SINGLE P-CHANNEL JFET
- Polarity: P-Channel
-
Supplier: Utmel Electronic Limited
Description: NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23
- Polarity: P-Channel
- Transistor Type: JFET
-
Supplier: Linear Systems
Description: The 2N5114 Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Siliconix-Vishay equivalent part. It is ideal for Low Resistance, Low Capacitance Switching Applications. Available in TO-18 3L ROHS package, as well as Tested Die. All Linear Systems devices are
- Package Type: Other
- Polarity: P-Channel
- Transistor Type: JFET
-
Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 30V Low Noise
- Transistor Type: JFET
-
Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 40V Low Ciss
- Transistor Type: JFET
-
Supplier: Acme Chip Technology Co., Limited
Description: JFET P-Channel 25V Low Ciss
- Transistor Type: JFET
-
Supplier: Linear Systems
Description: This dual P-Channel JFET amplifier is designed to provide a balance between very low noise (en = 2.0nV/vHz) and very low input capacitance (Ciss = 8pF).
- Polarity: P-Channel
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 3-Pin TO-226AA
- PD: 360 milliwatts
- Polarity: P-Channel
- V(BR)DSS: 30 volts
-
Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel -30V 50mA 360mW 3.27mW
- Transistor Type: JFET
-
Supplier: VAST STOCK CO., LIMITED
Description: JFET JFET P-Channel -30V 50mA 360mW 2.8mW
- Transistor Type: JFET
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: TRANS JFET P-CH 10MA 3TO-18
- IDSS: 10 milliamps
- Polarity: P-Channel
- TJ: 150 C
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 30V 3-Pin TO-18
- PD: 500 milliwatts
- Polarity: P-Channel
- TJ: 200 C
- V(BR)DSS: 30 volts
-
Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans JFET P-CH 3-Pin TO-92
- PD: 350 milliwatts
- Polarity: P-Channel
- TJ: 150 C
- V(BR)DSS: 30 volts
-
Supplier: ODG (Origin Data Global)
Description: JFET P-CH 30V 0.225W SOT23
- Package Type: SOT23, Other
- Polarity: P-Channel, Other
- TJ: -55 to 150 C
- VGS(off): 0.5000 volts
-
Supplier: ODG (Origin Data Global)
Description: JFET P-CH 40V 0.35W TO92
- Package Type: TO-92, Other
- Polarity: P-Channel, Other
- TJ: -65 to 135 C
- VGS(off): 0.7500 volts
-
Supplier: ODG (Origin Data Global)
Description: JFET P-CH 40V 0.225W SOT23
- Package Type: SOT23, Other
- Polarity: P-Channel, Other
- TJ: -55 to 150 C
- VGS(off): 0.7500 volts
-
Supplier: ODG (Origin Data Global)
Description: JFET P-CH 30V 0.35W TO92
- Package Type: TO-92, Other
- Polarity: P-Channel, Other
- TJ: -55 to 150 C
- VGS(off): 0.8000 volts
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 2mA@15V P-Channel 30V SOT-23 JFETs ROHS
- IDSS: 2 milliamps
- PD: 225 milliwatts
- Package Type: SOT23
- Polarity: P-Channel
-
Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: P-Channel
-
Supplier: DigiKey
Description: JFET P-Channel 30V 350mW Through Hole TO-92-3
- Package Type: TO-92, Other
- Polarity: P-Channel
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 1.5mA@15V P-Channel 300O 30V SOT-23 JFETs ROHS
- IDSS: 1.5 milliamps
- PD: 225 milliwatts
- Package Type: SOT23
- Polarity: P-Channel
-
Supplier: LCSC Electronics Technology (HK) Limited
Description: 225mW 7mA@15V P-Channel 125O 30V SOT-23 JFETs ROHS
- IDSS: 7 milliamps
- PD: 225 milliwatts
- Package Type: SOT23
- Polarity: P-Channel
-
Supplier: Utmel Electronic Limited
Description: JFET P-CH 40V 0.225W SOT23
- Polarity: P-Channel, Other
- Transistor Type: JFET
-
Supplier: DigiKey
Description: JFET P-Channel 30V 225mW Surface Mount SOT-23-3
- Package Type: SOT23, Other
- Polarity: P-Channel
-
Supplier: DigiKey
Description: JFET P-Channel 30V 400mW Through Hole TO-92-3
- Package Type: TO-92, Other
- Polarity: P-Channel
-
Supplier: DigiKey
Description: JFET P-Channel 30V 300mW Surface Mount SOT-23 (TO-236AB)
- Package Type: SOT23, Other
- Polarity: P-Channel
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1037502-2SJ03640QL Category: Discrete Semiconductor Products>Transistors - JFETs Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: P-Channel Power - Max: 150 mW Current - Drain (Idss) @ Vds (Vgs=0): 600
- Package Type: SOT3
- Polarity: P-Channel
- TJ: 150 C
- VGS(off): 1.5 volts
-
Supplier: RS Components, Ltd.
Description: Transistor JFET P-Channel SOT23 - Discrete Semiconductors - JFET Transistors
- Package Type: SOT23, Other
- Polarity: P-Channel
- rDS(on): 300 ohms
-
Supplier: RS Components, Ltd.
Description: JFET P-Channel Switch TO-92 - Discrete Semiconductors - JFET Transistors
- Package Type: TO-92, Other
- Polarity: P-Channel
- Transistor Type: JFET
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1188070-2N4338-E3 Category: Discrete Semiconductor Products>Transistors - JFETs Package: Bulk Standard Package: 200 FET Type: N-Channel Power - Max: 300 mW Voltage - Breakdown (V(BR)GSS): 50 V Current - Drain (Idss) @ Vds (Vgs=0): 200
- Package Type: SOT3
- Polarity: N-Channel
- TJ: -55 to 175 C
- VGS(off): 0.3000 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: Microsemi Corporation Win Source Part Number: 1123794-2N3822 Packaging: Bulk Mounting Style: Through Hole Transistor Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 50V Categories: Discrete Semiconductor Products Supplier Device Package: TO-72
- Output Power: 0.3000 watts
- Package Type: SOT3
- Packing Method: Bulk Pack, Other
- Polarity: N-Channel, Other
Find Suppliers by Category Top
Conduct Research Top
-
LSJ689 Ultra Low Noise P-Channel Dual JFET
The dual monolithic P-channel LSJ689 is the complement to the N-channel LSK489. Both devices feature low offset, low noise and low capacitance. They enable the efficient implementation of fully complementary input stages without many of the device matching requirements when pairs of discrete
More Information Top
Indicates content that may require registration and/or purchase.
-
Cryogenic Bipolar Technology For On-Focal-Plane Signal Processing
A. K. Kapoor, H. Hingarh, and T. S. Jayadev, "Operation of Poly Emitter Bipolar npn and p Channel JFET 's Near Liquid Helium (10 K) Temperature," Proc. of IEEE Bipolar Technology Meeting (1988).
-
Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes
Power coefficients Au of Lorentzian noise, as a function of the absorbed dose of @COyrays, relevant to N and P channel JFETs park of the complementary JFET - complementary MOSFET process:a) NJFET, W/L = 1600/1.6 (data extracted from figure 3).
-
A new method for realizing JFETs and super B's in a standard bipolar IC process
Abstract -A new method for the realization of p channel JFET ’s is presented.
-
Avalanche ionization rates measured in silicon and germanium at low electric fields
SILICON p CHANNEL JFET MOTOROLA 845475 .
-
Comments on `Class E tuned power amplifier with shunt inductor'
Abstract -A new method for the realization of p channel JFET ’s is presented.
-
The Radio Sky and How to Observe It
P Channel JFET .
-
Principles of Random Signal Analysis and Low Noise Design: The Power Spectral Density and its Applications
The small signal noise equivalent model for a NMOS or PMOS MOSFET, with the source connected to the substrate, and aN or P channel JFET , when they are operating in the saturation region, is shown in Figure 9.14 (for .
-
Low cost high performance microcontroller based semiconductor device tester
The tester system discussed in this paper provide accurate identification of semiconductor device under test (Diode, BJT, JFET), types of bipolar transistor (NPN, PNP), types of junction field effect transistor (N channel JFET, P channel JFET ).
-
Low Power Logic for Micron and sub-Micron Bipolar Processes
This made possible a gate of the type shown in figure 2, where both the NPN transistor and the P channel JFET are active switching elements.
-
Borsenic bipolar process
p channel JFET t r a n s i s t o r sa r ef a b r i c a t e da s .