P-Channel JFET

Description: NXP PMBFJ174,215 P-channel JFET Transistor, 30 V, Idss 20135mA, 3-Pin SOT-23

• V_(BR)DSS: 30 volts
• V_GS(off): 5 volts
• r_DS(on): 85 ohms
• P_D: 300 milliwatts

Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and

• Features: JFET
• Polarity: P-Channel

Description: Silicon P-Channel JFET Transistor General Purpose AF Amplifier Current gate is 10 mA Voltage gate to source cutoff is 7.5 V.

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, JFETs.

• P_D: 350 milliwatts
• T_J: -55 C
• Features: MOSFET
• Polarity: P-Channel

Description: Trans JFET P-CH 3-Pin TO-226AA

• V_(BR)DSS: 30 volts
• P_D: 360 milliwatts
• Features: JFET
• Polarity: P-Channel

Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, Bipolar Transistor, JFETs. This listing supports clearer

• P_D: 225 milliwatts
• Features: Bipolar RF Transistors, Other, P-Channel

Description: LOW NOISE, LOW CAPACITANCE SINGLE P-CHANNEL JFET

• Features: JFET
• Polarity: P-Channel

Description: JFET,p-channel,25V,60mA,SOT23

• Features: JFET, Other
• Polarity: P-Channel
• Package Type: SOT23

Description: JFET JFET P-Channel Reel of 1000

• Features: JFET

Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, 30V, Bipolar Transistor, JFETs. This listing supports

• P_D: 360 milliwatts
• Features: Bipolar RF Transistors, Other, P-Channel

Description: JFET P-Channel 30V 350mW Through Hole TO-92-3

• Features: Other
• Polarity: P-Channel
• Package Type: TO-92

Description: This dual P-Channel JFET amplifier is designed to provide a balance between very low noise (en = 2.0nV/√Hz) and very low input capacitance (Ciss = 8pF).

• Features: JFET
• Polarity: P-Channel

Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, SOT-23, Bipolar

• Features: Bipolar RF Transistors, P-Channel

Description: The 2N5114 Series Low On-Resistance, P-Channel JFET Switch is a direct replacement for Siliconix-Vishay equivalent part. It is ideal for Low Resistance, Low Capacitance Switching Applications. Available in TO-18 3L ROHS package, as well as Tested Die. All Linear Systems devices

• Features: JFET, Other
• Polarity: P-Channel

Description: 225mW 2mA@15V P-Channel 30V SOT-23 JFETs ROHS

• I_DSS: 2 milliamps
• V_GS(off): 0.5 volts
• P_D: 225 milliwatts
• T_J: -55 to 150 C

Description: JFET P-CH 40V 0.225W SOT23

• V_GS(off): 0.75 volts
• T_J: -55 to 150 C
• Features: JFET, Other
• Polarity: P-Channel

Description: JFET P-Channel 30V Low Noise

• Features: JFET, Other

Description: Win Source Part Number: 1037502-2SJ03640QL Category: Discrete Semiconductor Products>Transistors - JFETs Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: P-Channel Power - Max: 150 mW Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V Current Drain

• V_GS(off): 1.5 volts
• r_DS(on): 300 ohms
• T_J: 150 C
• Features: JFET

Description: JFET P-CH 40V 0.225W SOT23

• P_D: 200 milliwatts
• Number of Transistors in the Chip: 1
• Features: JFET, Other
• Polarity: P-Channel

Description: Manufacturer: NXP Win Source Part Number: 094696-PMBFJ175 Packaging: Reel - TR Mounting: SMD (SMT) Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 7mA @ 15V Voltage - Cutoff (VGS off) @ Id: 3V @ 10nA Resistance - RDS(On): 125 Ohm

• V_(BR)DSS: 30 volts
• V_GS(off): 3 volts
• r_DS(on): 125 ohms
• P_D: 300 milliwatts

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 023707-MMBF5462 Packaging: Reel - TR Mounting: SMD (SMT) Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 40V Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1μA Categories:

• V_GS(off): 1.8 volts
• P_D: 225 milliwatts
• T_J: -55 to 150 C
• Features: JFET, Other

Description: Manufacturer: NXP Win Source Part Number: 061952-PMBFJ176,215 Packaging: Reel - TR Mounting: SMD (SMT) Polarity: P-Channel Voltage - Breakdown (V(BR)GSS): 30V Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V Voltage - Cutoff (VGS off) @ Id: 1V @ 10nA Resistance - RDS(On): 250 Ohm

• V_(BR)DSS: 30 volts
• V_GS(off): 1 volts
• r_DS(on): 250 ohms
• P_D: 300 milliwatts

Description: Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

• Features: MOSFET RF Transistors, Other
• Polarity: P-Channel
• Package Type: SOT23
• Packing Method: Tape Reel