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Supplier: Richardson RFPD
Description: ceramic, stripline and axial lead packages and as bond-able chips. Both P and N type diodes are offered. Detectors and power monitors in stripline, coaxial and waveguide circuits through 40 GHz.
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: The MA4E2200 series are silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. The small diode package size and moderate parasitics make these parts ideal for low
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. The MA4E2200 series of zero bias detector diodes are
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Infineon Technologies AG
Description: These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for overvoltage protection. Their low barrier height, small forward voltage and low junction capacitance, make BAT17-04W a suitable choice for mixer and detector
- Applications: Detector, Mixer
- IF: 130 mA
- Life Cycle Stage: Other
- Package Type: SOT323, Other
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications
- Applications: Detector, Mixer
- IF: 110 mA
- Life Cycle Stage: Other
- Package Type: SOT143, Other
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Supplier: Infineon Technologies AG
Description: Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and
- Applications: Detector, Mixer
- IF: 110 mA
- Life Cycle Stage: Other
- Package Type: Other
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Supplier: Infineon Technologies AG
Description: Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and
- Applications: Detector, Mixer
- IF: 110 mA
- Life Cycle Stage: Other
- Package Type: Other
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers P-Type Schottky chip Cj at 0V=.15pF
- Diode Type: Schottky Barrier Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers K-Band P Type Cj=.1pF
- Diode Type: Schottky Barrier Diodes
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Supplier: Richardson RFPD
Description: Dual Diode - Reverse Series Pair (Reverse Tee) Configuration: The MA4E2200 series are Silicon zero bias P-type detector diodes assembled in low cost surface mount plastic packages. They are designed for usage in a wide variety of detector applications. The MA4E2200 series of
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: ODG (Origin Data Global)
Description: 60V Independent Type 3A 620mV@3A PowerDI-123 Schottky Diodes ROHS
- Diode Type: Schottky Barrier Diodes
- RoHS Compliant: Yes
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMSA7630-061 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7630-040LF, SMS7630-079LF The SMSA7630-061 is a silicon, zero bias Schottky detector diode with an ultra-miniature 0201 footprint and very low barrier height. This
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMS7630-061 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7630-040LF, SMS7630-079LF The SMS7630-061 is a silicon, zero bias Schottky detector diode with an ultra-miniature 0201 footprint and very low barrier height. This
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Diode Type: Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: Micro Commercial Co Category: Discrete Semiconductor Products -Diodes -Rectifiers Single Diodes Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Cut Tape (CT) Product Status: Active Technology: Schottky Current - Reverse Leakage @ Vr: 2 µA @ 75 V Capacitance
- Diode Type: Schottky Barrier Diodes
- IR: 0.0020 mA
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Category: Discrete Semiconductor Products -Diodes Rectifiers -Single Diodes Series: Automotive, AEC-Q101 Package: Tape & Reel (TR) Cut Tape (CT) Technology: Schottky Product Status: Active Base Product Number: MSS1P2 Mounting Type: Surface
- Diode Type: Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: Vishay Category: Discrete Semiconductor Products -Diodes Rectifiers- Single Diodes Series: TMBS® Package: Tape & Reel (TR) Cut Tape (CT) Product Status: Active Technology: Schottky Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device
- Diode Type: Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products -Diodes Rectifiers- Single Diodes Package: Tape & Reel (TR) Cut Tape (CT) Product Status: Active Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 300 µA
- Diode Type: Schottky Barrier Diodes
- IR: 0.3000 mA
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Description: SI SCHOTTKY P-TYPE DETECTOR DIOD
- Diode Type: RF Diodes
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Description: SCHOTTKY DETECTOR P-TYPE KU BA
- Diode Type: RF Diodes
- Tj: -55 to 150 C
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Supplier: RS Components, Ltd.
Description: Continuous Forward Current = 30A Diode Configuration = Common Cathode Number of Elements per Chip = 2 Peak Reverse Repetitive Voltage = 60V Mounting Type = Through Hole Package Type = TO-3P Diode Type = Schottky Diode Technology =
- Applications: Rectifier Diode
- IF: 30000 mA
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: Low power loss. Low foward voltage drop. High current capability Maximum Continuous Forward Current = 60A Diode Configuration = Common Cathode Number of Elements per Chip = 2 Peak Reverse Repetitive Voltage = 100V Mounting Type = Through Hole Package Type = TO-3P
- Applications: Rectifier Diode
- IF: 60000 mA
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: Low power loss. Low foward voltage drop. High current capability Diode Configuration = Common Cathode Maximum Continuous Forward Current = 60A Number of Elements per Chip = 2 Peak Reverse Repetitive Voltage = 60V Mounting Type = Through Hole Package Type = TO-3P
- Applications: Rectifier Diode
- IF: 60000 mA
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: Low power loss. Low foward voltage drop. High current capability Diode Configuration = Common Cathode Maximum Continuous Forward Current = 30A Number of Elements per Chip = 2 Peak Reverse Repetitive Voltage = 60V Mounting Type = Through Hole Package Type = TO-3P
- Applications: Rectifier Diode
- IF: 30000 mA
- Package Type: Other
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, SCHOTTKY, TYPES 1N5711, 1N5712, 1N6857, 1N6858, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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Supplier: Microchip Technology, Inc.
Description: frequency operation Stable temperature behavior Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Phase leg VRRM (V): 700 VF (V): 1.5 Current (A) Tc=80C: 100 Silicon type: SiC diode Package:
- Diode Type: General Purpose (PN Junction Diodes)
- VF: 1.5 volts
- VR: 700 volts
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Supplier: ASTM International
Description: formation of Schottky or p-n junction diodes on or in the epitaxial layer. In this sense the method is destructive (see, however, 5.2). 1.3 Both n- and -type epitaxial layers can be evaluated, on substrates of the same or opposite types, if the layer thickness is
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Supplier: ROHM Semiconductor GmbH
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- IDSS: -2000 milliamps
- PD: 900 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- IDSS: -1000 milliamps
- PD: 900 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Fairview Microwave Inc.
Description: RF detectors from Fairview Microwave are available with N Type or SMA connector series inputs and BNC or SMA connectors for outputs. Fairview RF detectors are zero bias Schottky diode and have negative video out. These zero bias Schottky diode detectors for RF have
- Connector Type: SMA
- Frequency Range: 100 to 18000 MHz
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
The MMD-1030LCSM is a MMIC doubler fabricated with GaAs Schottky diodes. It delivers operation over a 5 to 15GHz input frequency range or a doubled output frequency range of 10 to 30GHz. Featuring excellent conversion loss, superior isolations and harmonic suppressions across a broad bandwidth, the doubler is an ideal solution for test and measurement applications. Available as a 3x3 mm QFN. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC
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MRS Online Proceedings Library - Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes - Cambridge Journals Online
For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC.
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Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy
500 kHz for different gate biases on p type Schottky diodes .
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Platinum and Rhodium Silicide–Germanide Optoelectronics
Figure 14a and b shows the oper- ational current–voltage (I–V) characteristics for the n and p type Schottky diodes in the circuit.
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The Measurement of AM noise of Oscillators
A strong preference for negative output voltage seems to derive from the lower noise of P type Schottky diodes , as compared to N type ones, in conjunction with practical issues of mechanical layout.
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The Measurement of AM noise of Oscillators
A strong preference for negative output voltage seems to derive from the lower noise of P type Schottky diodes , as compared to N type ones, in conjunction with practical issues of mechanical layout.
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Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
While the room temperature I-V characteristics of the n-type Schottky diode after turn-on is more or less linear up to ~100 A/cm2 , the I-V characteristics of the p - type Schottky diode shows a non-linear behavior even after…
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“No cost” reduced-leakage Schottky diode by ion implantation
On the other hand, Shannon and several other researchers have shown that a shallow P+ orN+ region in a P - type Schottky diode can lower or raise, respectively, the diode’s barrier height [2-81.
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P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
The high forward drop in these p - type Schottky diodes can be attributed to the large specific on resistance .
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Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky
Contacts
The p - type Schottky diode is in strong forward bias.
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Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides
Schematic diagrams depicting the band bending in (a) an n -type Schottky diode and (b) a p - type Schottky diode , as a result of thin p+ layers near the metal /Si interface.