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Supplier: VAST STOCK CO., LIMITED
Description: Schottky Diodes & Rectifiers P-Type Schottky chip Cj at 0V=.15pF
- Features: Schottky Barrier Diodes
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Supplier: Richardson RFPD
Description: Single Diode Configuration: This family of low capacitance Schottky diodes is designed to give superior performance in video detectors and power monitors from 100 MHz through 40 GHz. They have low junction capacitance and repeatable video impedance. These diodes are
- Operating Frequency: 0 to 10,000 MHz
- CT: 0.32 pF
- Features: Other, RF Diodes, Schottky Barrier Diodes, Single
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and Rectifier, Single
- Tj: -55 C
- IO: 3 amps
- Features: Other, Schottky Barrier Diodes
- Applications: Rectifier Diode
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in
- VF: 0.25 to 0.32 volts
- IF: 110 mA
- VR: 4 volts
- Applications: Detector, Mixer
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMSA7630-061 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7630-040LF, SMS7630-079LF The SMSA7630-061 is a silicon, zero bias Schottky detector diode with an ultra-miniature 0201 footprint and very low barrier height. This
- Features: Schottky Barrier Diodes
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Supplier: Newark, An Avnet Company
Description: SCHOTTKY RECTIFIER, CMN CTHD, 20A TO-220; Diode Case Style:TO-220; Diode Configuration:Dual Common Cathode; Diode Type:Schottky; Features:L Series 60V, 20A Schottky; Filter Terminals:Solder; Forward Current If(AV):20A; No. of Pins:3 RoHS Compliant:
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Supplier: Skyworks Solutions, Inc.
Description: resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.
- Features: Schottky Barrier Diodes
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Supplier: Allied Electronics, Inc.
Description: dual power rectifier in a TO3P⁄TO218 type package designed using the Schottky barrier principle with a platinum barrier metal.
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Supplier: ODG (Origin Data Global)
Description: 60V Independent Type 3A 620mV@3A PowerDI-123 Schottky Diodes ROHS
- RoHS Compliant: RoHS Compliant
- Features: Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 064026-SB07-03P Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 700mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 700mA Reverse Recovery
- VF: 0.55 volts
- VR: 30 volts
- IR: 0.08 mA
- trr: 10 ns
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 046732-SB05-05P Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA Reverse Recovery
- VF: 0.55 volts
- VR: 50 volts
- IR: 0.05 mA
- trr: 10 ns
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Supplier: Win Source Electronics
Description: Manufacturer: Broadcom Limited Win Source Part Number: 1181963-HSMS-282P-BLKG Packaging: Bulk Current - Max: 1A Diode Type: Schottky - 2 Pair Series Connection Categories: Discrete Semiconductor Products Supplier Device Package: SOT-363 Status: Obsolete Temperature Range -
- Tj: 150 C
- CT: 1 pF
- Features: Other, RF Diodes, Schottky Barrier Diodes
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 064031-SB20-03P Packaging: Reel - TR Mounting: SMD (SMT) Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Reverse Recovery Time
- VF: 0.55 volts
- VR: 30 volts
- IR: 0.1 mA
- trr: 20 ns
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, SCHOTTKY, TYPES 1N5711, 1N5712, 1N6857, 1N6858, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode Product overview: SSM6G18NU from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and
- Features: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: rectifier, Schottky, switching diode, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-JDV4P08U can be used for catalog matching
- Features: Rectifier Diode
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Description: SCHOTTKY DETECTOR P-TYPE KU BA
- Tj: -55 to 150 C
- Features: Other, RF Diodes
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Supplier: ASTM International
Description: Schottky or p-n junction diodes on or in the epitaxial layer. In this sense the method is destructive (see, however, 5.2). 1.3 Both n- and -type epitaxial layers can be evaluated, on substrates of the same or opposite types, if the layer thickness is greater than
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Diode VAR Cap Single 10V 15pF 2-Pin ESC / TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Product overview: 1SV273 from Toshiba Electronic Devices and Storage Corporation is a Diode and Rectifier for rectification, reverse-polarity protection, signal
- Features: Rectifier Diode
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Supplier: Newark, An Avnet Company
Description: SCHOTTKY RECTIFIER, 30mA 50V SOD-80; Capacitance:1.6pF; Current Rating:30mA; Diode Case Style:SOD-80; Diode Configuration:Single; Diode Type:Schottky; Forward Current If(AV):15mA; Forward Surge Current Ifsm Max:500mA; No. of Pins:2 RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: SCHOTTKY RECTIFIER, 30mA, 50V, MICROMELF; Capacitance:2.1pF; Current Rating:30mA; Diode Case Style:MicroMELF; Diode Type:Schottky; Forward Current If(AV):15mA; Forward Surge Current Ifsm Max:2A; Forward Voltage VF Max:950mV RoHS Compliant: Yes
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Supplier: Microchip Technology, Inc.
Description: SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Low stray inductance High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct
- VF: 1.5 volts
- VR: 1,200 volts
- Features: General Purpose (PN Junction Diodes)
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Supplier: Microchip Technology, Inc.
Description: SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Low stray inductance High efficiency converter Outstanding performance at high frequency operation Stable temperature behavior Direct
- VF: 1.5 volts
- VR: 700 volts
- Features: General Purpose (PN Junction Diodes)
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Supplier: RS Components, Ltd.
Description: Texas Instruments range of Decoders, Multiplexers and Demultiplexers from the 74LS Family of Low Power Schottky Logic ICs. The 74LS Family use bipolar junction technology coupled with Schottky diode clamps to achieve operating speeds equal to the original 74TTL family but with
- Pin Count: 16
- Number of Units in the Chip: 1
- Function: Decoders
- Package Type: PDIP
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- V(BR)DSS: -30 volts
- IDSS: -1,000 milliamps
- PD: 900 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- V(BR)DSS: -20 volts
- IDSS: -1,500 milliamps
- PD: 900 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- V(BR)DSS: -20 volts
- IDSS: -2,400 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
- V(BR)DSS: -30 volts
- IDSS: -1,000 milliamps
- PD: 900 milliwatts
- TJ: -55 to 150 C
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Supplier: Fairview Microwave Inc.
Description: RF detectors from Fairview Microwave are available with N Type or SMA connector series inputs and BNC or SMA connectors for outputs. Fairview RF detectors are zero bias Schottky diode and have negative video out. These zero bias Schottky diode detectors for RF have
- Frequency Range: 100 to 18,000 MHz
- Connector Type: SMA
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Supplier: Fairview Microwave Inc.
Description: RF detectors from Fairview Microwave are available with N Type or SMA connector series inputs and BNC or SMA connectors for outputs. Fairview RF detectors are zero bias Schottky diode and have negative video out. These zero bias Schottky diode detectors for RF have
- Frequency Range: 100 to 12,400 MHz
- Connector Type: SMA
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Supplier: Infineon Technologies AG
Description: supplies (UPS) Washing and drying Designers who used this product also designed with IPA60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH04G65C6 | CoolSiC™ Schottky Diodes BAS3010A-03W | Schottky Diodes IKW40N65H5 | IGBT discretes IPW60R037CM8 | 600 V CoolMOS™ 8
- Quiescent Current (IQ): 0.00038 amps
- Operating Temperature: -25 to 125 C
- Features: Other
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Supplier: ASTM International
Description: 0.24 to about 330 [omega]-cm in p-type wafers). 1.2 This test method requires the formation of a Schottky barrier diode with a mercury probe contact to an epitaxial or polished wafer surface. Chemical treatment of the silicon surface may be required to produce a reliable
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Supplier: ASTM International
Description: about 0.1 to about 100 Ω-cm in n-type wafers and from about 0.24 to about 330 Ω-cm in p-type wafers). 1.2 This test method requires the formation of a Schottky barrier diode with a mercury probe contact to an epitaxial or polished wafer surface. Chemical treatment
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Supplier: Infineon Technologies AG
Description: Connector Replacement USB Type-C List of components EZ-PD™ BCR - USB Type-C port controller (CYPD3177-24LQXQ) 13 V Clamp 3.5A (8/20µs) Ipp TVs Diode Surface Mount WLL-2-3 (ESD131-B1-W0201) Silicon Schottky Diode 10 V 3 A SOD323-2 (BAT60A) MOSFET 2P-CH 30V 9.2 A
- Category: Development Board
- Features: Other
- Ports: USB
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Microcontrollers (MCU) - 32-bit XMC™ Arm® Cortex® Industrial Microcontroller -- XMC1402-Q040X0064 AASupplier: Infineon Technologies AG
Description: Power MOSFET IDH08G65C6 | CoolSiC™ Schottky Diodes IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET ITS5215L | PROFET™ Industrial | Smart high-side switch ICE5QR1680AG | CoolSET™ Quasi
- Internal RAM Size: 16 KB
- Serial Port Channels: 4
- Number of A/D Converters: 2
- Pin Count: 35
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
The MMD-1030LCSM is a MMIC doubler fabricated with GaAs Schottky diodes. It delivers operation over a 5 to 15GHz input frequency range or a doubled output frequency range of 10 to 30GHz. Featuring excellent conversion loss, superior isolations and harmonic suppressions across a broad bandwidth, the doubler is an ideal solution for test and measurement applications. Available as a 3x3 mm QFN. (read more)
Browse RF Frequency Multipliers Datasheets for Marki Microwave LLC
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MRS Online Proceedings Library - Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes - Cambridge Journals Online
For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC.
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Electrical characterisation of epitaxial 6H-SiC by admittance spectroscopy
500 kHz for different gate biases on p type Schottky diodes .
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Platinum and Rhodium Silicide–Germanide Optoelectronics
Figure 14a and b shows the oper- ational current–voltage (I–V) characteristics for the n and p type Schottky diodes in the circuit.
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The Measurement of AM noise of Oscillators
A strong preference for negative output voltage seems to derive from the lower noise of P type Schottky diodes , as compared to N type ones, in conjunction with practical issues of mechanical layout.
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The Measurement of AM noise of Oscillators
A strong preference for negative output voltage seems to derive from the lower noise of P type Schottky diodes , as compared to N type ones, in conjunction with practical issues of mechanical layout.
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Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
While the room temperature I-V characteristics of the n-type Schottky diode after turn-on is more or less linear up to ~100 A/cm2 , the I-V characteristics of the p - type Schottky diode shows a non-linear behavior even after…
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“No cost” reduced-leakage Schottky diode by ion implantation
On the other hand, Shannon and several other researchers have shown that a shallow P+ orN+ region in a P - type Schottky diode can lower or raise, respectively, the diode’s barrier height [2-81.
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P-type 4H and 6H-SiC high-voltage Schottky barrier diodes
The high forward drop in these p - type Schottky diodes can be attributed to the large specific on resistance .
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Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky
Contacts
The p - type Schottky diode is in strong forward bias.
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Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides
Schematic diagrams depicting the band bending in (a) an n -type Schottky diode and (b) a p - type Schottky diode , as a result of thin p+ layers near the metal /Si interface.