Products/Services for Sansui 8080 Output Transistors
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Transistors - (919 companies)...proportionally larger changes in output current, resulting in amplification. The current which runs through a transistor also can also function as a switching mechanism. A simple visual analogy can be used to understand transistor operation...Transistor TypePolarityPackage Type -
Data Output Modules - (219 companies)Data output modules or cards transfer amplified, conditioned, or digitized signals. Data output modules transfer amplified, conditioned, or digitized signals to processing systems or devices. They plug into backplanes or motherboards, or interface... -
RF Transistors - (315 companies)...are expressed in decibels (dB). Other performance specifications for RF transistors include: Output power. Operating frequency. Operating temperature. Some RF transistors support a temperature range and feature mechanical and electrical specifications... -
Bipolar RF Transistors - (185 companies)Inductiveload. Operation. A primary use for bipolar transistors is to control the output collector current (IC) by varying the current ("current-controlled") or voltage ("voltage-controlled") of the base terminal. Because a very small current... -
Darlington Transistors - (125 companies)Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written SS) and require less space than configurations that use two discrete... -
RF MOSFET Transistors - (92 companies)...specifications for MOSFET RF transistors include maximum drain saturation, common-source forward transconductance, operating frequency, and output power. Some bipolar MOSFET RF transistors are suitable for automotive, commercial, or general...
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Power Bipolar Transistors - (87 companies)...or milliwatts (mW). Other performance specifications for bipolar transistors include: Power gain. Output power. Temperature range. Some devices support a specific temperature range and feature mechanical and electrical specifications that are suitable...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
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Small-Signal Bipolar Transistors (BJT) - (157 companies)...polarities. Image credit: Answers. Modes. A transistor can operate in three different states: cut-off, in which the transistor has no current output; active, in which the output collector current, iC, is controlled by the base current, iB; and saturated...
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Junction Field-Effect Transistors (JFET) - (94 companies)Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Junction field effect transistors (JFET...
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Win Source Electronics
ULN2803ADWR Darlington Transistor Array IC The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a wide range of loads from microcontroller or logic-level signals. It offers robust performance with built-in suppression diodes for inductive load protection, making it ideal for applications like industrial control systems, automotive electronics... (read more)Browse Transistors Datasheets for Win Source Electronics -
DigiKey
STDRIVEG600 Gate Driver for GaN Transistors both in package part (PN is STDRIVEG600) and in wafer for dice business (PN is STDRIVEG600w). Features. Voltage rail to 600 V. Up to 20 V gate driver. 5.5 A / 6 A sink/source currents. 45 ns short propagation delay. Bootstrap diode. Separated ON-OFF outputs for easy gate driving tuning. 3.3 V / 5 V logic inputs. UVLO on VCC and VBOOT. Thermal shutdown. Interlocking function. Shutdown pin. SO16 package... (read more)Browse Gate Drivers Datasheets for DigiKey -
Vimfun Diamond Wire Saw
Intelligent Graphite Wire Saw SVI 80-80 The SVI 80-80 Graphite Wire Saw is an advanced diamond wire cutting system designed for graphite slicing, complex profile cutting, and high-precision material processing. Utilizing a closed-loop diamond wire cutting structure, the machine delivers fast cutting speed, smooth surface quality, minimal dust generation, and excellent cutting accuracy. Equipped with two independent cutting systems, the SVI 80-80 supports both automatic slicing operations and CNC contour/profile cutting, allowing... (read more)Browse Wire Cutting Machines Datasheets for Vimfun Diamond Wire Saw -
Nexperia B.V.
Video: Strengths of Nexperia’s bipolar transistors In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt regulators with power bipolar transistors in a current sink configuration. This linear regulation approach is used as an output stage prior to a boost stage and offers robust and sustainable operation of the LEDs. Nexperia 's power bipolar transistors in DPAK... (read more)Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
Qorvo
15W, 30-1200 MHz, GaN RF Input-Matched Transistor QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
25W, 30-1200 MHz, GaN RF Input-Matched Transistor QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
7W 30-1200 MHz, GaN RF Input-Matched Transistor QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
300W, 1-1.5 GHz, GaN on SiC RF Transistor The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available... (read more)Browse RF Transistors Datasheets for Qorvo -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics
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Handbook of Sustainable Engineering
8080 /SW-846 608 … cycle assessment (PLCA) is a tool that enables quantification of the input and output from the processes … … Industry Co., Ltd., has through-hole plating applied to the drilled laminates by Sansui Electronics Co., Ltd … Josephson junctions are expected to be applied to logic devices, single electron transistors , quantum computers, etc.
