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Supplier: Newark, An Avnet Company
Description: SIC IGBT CoPak-1200V-100A SOT-227; Continuous Collector Current:100A; Collector Emitter Saturation Voltage:1.2kV; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: GATE DRIVER IC, SIC MOSFET/IGBT, 750V ROHS COMPLIANT: YES
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Supplier: Newark, An Avnet Company
Description: GATE DRIVER IC, SIC MOSFET/IGBT, 1.2KV ROHS COMPLIANT: YES
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Supplier: Newark, An Avnet Company
Description: EV INVERTER CONTROL; IGBT & SIC GDIC ROHS COMPLIANT: YES
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Features: IGBT
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Supplier: Radwell International
Description: (PRICE/TC) IGBT DRIVER, -40 TO 105DEG C; NO. OF CHANNELS:1CHANNELS; DRIVER CONFIGURATION:HIGH SIDE AND LOW SIDE; POWER SWITCH TYPE:IGBT, SIC MOSFET; NO. OF PINS:16PINS; DRIVER CASE STYLE:SOIC; INPUT TYPE:INVERTING, NON-INVERTING; SINK CURRENT:-ROHS COMPLI. FREE 2 YEAR RADWELL
- Features: IGBT
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Supplier: Fuji Electric Corp. of America
Description: lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in
- Input Voltage: 1.8 volts
- Input Current: 10 amps
- Output Voltage: 650 volts
- Output Current: 50 amps
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules 1200V 100A SIC IGBT CoPak
- Features: IGBT
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Supplier: ODG (Origin Data Global)
Description: 8A 1200V ESOP IGBT SIC IN T/R
- Operating Temperature: -40 to 125 C
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Supplier: ODG (Origin Data Global)
Description: IGBT WITH SIC COPACK DIODE IGBT
- TJ: -55 to 175 C
- Features: IGBT, Other
- Package Type: TO-247
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
- Features: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT WITH SIC COPACK DIODE IGBT
- Output Power: 375 watts
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Description: IGBT WITH SIC COPACK DIODE IGBT
- Output Power: 375 watts
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Fuji Electric Corp. of America
Description: lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in
- Technology: SiC
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Supplier: Utmel Electronic Limited
Description: IXYS SEMICONDUCTOR IXGH48N60C3C1 IGBT Single Transistor, SIC, 75 A, 2.5 V, 300 W, 600 V, TO-247AD, 3 Pins
- VCE(on): 2.5 volts
- IC(max): 75 amps
- PD: 300,000 milliwatts
- TJ: -55 to 150 C
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Supplier: DigiKey
Description: IGBT PT MOS 7 SIC COMBI 1200 V 2
- TJ: -55 to 150 C
- Features: IGBT, Other
- Structure: PT
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: DigiKey
Description: DC-DC IGBT & SIC
- DC Input Voltage: 21.6 to 26.4 volts
- DC Output Current: 0.1 amps
- Form Factor: Board Mount
- Type: DC/DC Converter
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: DIGITAL ISO 5KV 1CH GATE DVR 8SO Product overview: STGAP2SICS from STMicroelectronics is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets,
- Supply Voltage: 3 to 5.5 volts
- Rise Time: 30 ns
- Fall Time: 30 ns
- Operating Temperature: -40 to 125 C
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: VISHAY SIC734CD9-T1 MOSFET DRIVER, POWERPAK Product overview: SIC734CD9-T1 from Vishay is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets,
- Number of Outputs: 1
- Features: Other
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Supplier: Infineon Technologies AG
Description: 650 V, 75 A IGBT Discrete with CoolSiC™ diode 650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching
- VCE(on): 650 volts
- Switching Speed: 40 to 100 kHz
- tr: 9 ns
- tf: 15 ns
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Automotive-grade trench field-stop 600 V, 60 A very high speed V series IGBT featuring free-wheeling SiC diode Product overview: STGWA60V60DWFAG from STMicroelectronics is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and
- Features: IGBT
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Gate Drivers 30A DrMOS VRPower Product overview: SIC530CD-T1-GE3 from Vishay is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets,
- Supply Voltage: 4.5 to 20 volts
- Features: Other
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Supplier: Infineon Technologies AG
Description: The EVAL-1ED3142MU12F-SIC is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for
- Category: Development Board
- Features: Other
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Supplier: Infineon Technologies AG
Description: Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO
- tr: 12 ns
- tf: 13 ns
- Features: IGBT, Other
- Packing Method: Shipping Tube / Stick Magazine
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Supplier: Vincotech GmbH
Description: Advanced Neutral Point Clamped topology IGBT Kelvin Emitter for improved switching performance MOSFET Temperature sensor High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up CTI600 housing material Compact,
- Output Voltage: 1,200 volts
- Output Current: 300 amps
- Features: Other / Specialty Configuration, Other / Specialty Technology
- Technology: SiC
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Supplier: Littelfuse, Inc.
Description: The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias
- Features: IGBT
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Supplier: Infineon Technologies AG
Description: EasyPACK™ 4B 950 V, 600 A 3-Level IGBT module with TRENCHSTOP™ IGBT7 and 1200 V CoolSiC™ Schottky Diode. Summary of Features EasyPACK™ 4B with three substrates ANPC topology with four fast switches 950 V IGBT7 and 1200 V SiC diode Optimized stray inductance Improved hold-down concept
- VCES: 950 volts
- VCE(on): 1.63 volts
- IC(max): 600 amps
- Features: IGBT, Other
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Supplier: Richardson RFPD
Description: Augmented SwitchingTM LINPAK / HV100 Intelligent Isolated Plug-and-Play mSiCTM Gate Driver Intelligent Isolated Plug-and-Play Gate Driver - 3.3 kV XIFM is an intelligent isolated Plug-and-Play mSiCTM Gate Driver designed to drive 3.3kV SiC modules in High-Voltage (HV) packages such as HV
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Supplier: ROHM Semiconductor GmbH
Description: The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power
- PD: 254,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ROHM Semiconductor GmbH
Description: The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power
- PD: 178,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: ROHM Semiconductor GmbH
Description: The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power
- PD: 214,000 milliwatts
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- Features: IGBT, Other
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Kelvin Emitter for improved switching performance Low inductive commutation loop Neutral Boost PFC Temperature sensor High speed and smooth switching Low gate charge Very low collector emitter saturation voltage Convex shaped substrate for superior thermal contact
- Output Voltage: 650 volts
- Output Current: 100 amps
- Technology: IGBT
- Features: Other / Specialty Technology
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Supplier: Rochester Electronics
Description: SI8286CD - Automotive Isolated SiC and IGBT driver in WB SOIC16
- Features: IGBT, Other
- Packing Method: Tape Reel
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Supplier: DigiKey
Description: EV INVERTER CONTROL; IGBT & SIC
- Isolation Voltage: 8,000 volts
- Operating Temperature: -40 to 150 C
- Mounting Option: Surface Mount
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Description: EV INVERTER CONTROL; IGBT & SIC
- Operating Temperature: -40 to 257 F
- Product Type: H Bridge
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Featured Products Top
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efficiency challenges as systems become smaller, denser and more power hungry,” says Gaetano Pignataro, Head of SiC & IGBT Product Group at Nexperia. “At Nexperia, we are focused on developing solutions that address these real system-level challenges. Our 1200 V SiC MOSFETs in QDPAK (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
vehicle market.” Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules (WIM), Nexperia, said: “Strong partnerships are essential to unlocking the full potential of wide bandgap technologies, including SiC and GaN. With our continued R&D investments and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
Asymmetric regulated outputs suit IGBT, Si, SiC, and GaN cascode gate drives - It is now simpler than ever to generate power for IGBT, Si, SiC, and GaN cascode gate drivers with RECOM's R24C2T25 DC/DC converter from Richardson RFPD. The SMT part, in a compact 7.5 x 12.83mm 36-pin (read more)
Browse DC-DC Converter Chips Datasheets for Richardson RFPD -
mechanical stress, high resistance to thermal shock, high thermal conductivity, and high wear resistance. These properties allow it to withstand high dynamic stress and high temperature conditions. It is widely used as a heat dissipation material for IGBT and SiC MOSFET in automotive, electronics (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
Infineon is uniquely positioned in the power semiconductor market, mastering all power technologies from silicon (Si) like CoolMOS™ SJ MOSFETs and IGBTs to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Its CoolGaN™ devices will (read more)
Browse Network Equipment Datasheets for DigiKey -
. MTE’s SyntriX AHF™ leverages silicon carbide (SiC) technology. which can result in an increase in system efficiency by up to 1% compared to an IGBT filter. For datacenters where power consumption is significant, this 1% difference is substantial (read more)
Browse Harmonic Filters Datasheets for MTE Corporation -
-generation vehicle architectures. By combining our wide bandgap semiconductor expertise – spanning both SiC and GaN – with the advanced system concepts of our partner IAV, we are enabling new approaches to e-mobility design from the ground up. Close collaboration at an early stage allows us to (read more)
Browse Transistors Datasheets for Nexperia B.V.
Conduct Research Top
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Wolfspeed SiC MOSFET-Based, Bidirectional, Three-Phase AC/DC Converters
This article demonstrates a design concept using commercially available SiC MOSFETs (C3M0065100K), which meets new market requirements for bidirectional functionality. A prototype 20-kW system in a simple two-level topology - switching at 48 kHz is shown. The prototype is tested to full power where
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1200V CoolSiC TM MOSFET: High Performance Complemented by High Reliability
The dedicated material properties of SiC enable the design of minority carrier free unipolar devices instead of the charge modulated IGBT devices.
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
More Information Top
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Advanced High Voltage Power Device Concepts
W. Sung, et al, “Design and Investigation of the Frequency Capability of 15 kV 4 H- SiC IGBTs ”, IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 271–274, 2009.
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High temperature SiC trench gate p-IGBTs
The fabrication and characterization of high temperature SiC IGBTs with high current levels are presented.
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SiC and GaN Semiconductors Report - World - 2013
Looking further out, the SiC BJT device structure is a suitable base for SiC IGBT development in 8kV or 10kV applications.
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Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
SiC BJTs do not show substantial conductivity modulation, SiC IGBTs depend upon it for a low forward drop for >10 kV switches.
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Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005
With the SiC IGBT , some observers believe it will be possible to use conventional, hard-switching designs, without multi-levels or cascaded modules, in applications from medium voltage (1,000 to 4,160 V) up to over 13,800 V.
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2013 Combined Subject Index IEEE Industry Applications Society Publications
Control technique for 15 kV SiC IGBT based active front end converter of a 13.8 kV grid tied 100 kVA transformerless intelligent power substation.
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2012 Combined Subject Index IEEE Industry Applications Society Publications
Afridi, Khurram K., +, ECCE Sept. 2012 4209-4216 Buffer layers High performance, ultra high voltage 4H- SiC IGBTs .
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2011 Combined Subject Index IEEE Industry Applications Society Publications
Goff, Jeremy K., +, ICEMS Aug. 2011 1-5 Transformer less Intelligent Power Substation design with 15kV SiC IGBT for grid interconnection.
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Comparison of 10-kV SiC power devices in solid-state transformer
In recent years, much progress has also been made in the development of high-voltage SiC IGBTs and thyristors [6]-[9].
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Smart grid technologies
For high-voltage power devices capable of 15–25-kV blocking, SiC IGBT technology becomes attractive because of its supe- rior on-state characteristic, fast switching speed, and excellent safe operating area (SOA).