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Supplier: Fuji Electric Corp. of America
Description: and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in
- Input Current: 36 amps
- Input Voltage: 1.7 volts
- Output Current: 90 amps
- Output Voltage: 1200 volts
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Supplier: Fuji Electric Corp. of America
Description: and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in
- Technology: SiC
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Transistor Type: IGBT
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Supplier: Fuji Electric Corp. of America
Description: and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in
- Technology: Si/SiC
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Supplier: Fuji Electric Corp. of America
Description: and lighter products. Fuji Electric Hybrid SiC modules consist of a SiC-based SBD (Schottky Barrier Diode) and Si-based IGBT (Insulated Gate Bipolar Transistor). With a capacity line-up ranging from 600 V to 3300 V, this series contributes to energy saving and miniaturization in
- Input Current: 18 amps
- Input Voltage: 1.7 volts
- Output Current: 90 amps
- Output Voltage: 1200 volts
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Supplier: Radwell International
Description: (PRICE/TC) IGBT DRIVER, -40 TO 105DEG C; NO. OF CHANNELS:1CHANNELS; DRIVER CONFIGURATION:HIGH SIDE AND LOW SIDE; POWER SWITCH TYPE:IGBT, SIC MOSFET; NO. OF PINS:16PINS; DRIVER CASE STYLE:SOIC; INPUT TYPE:INVERTING, NON-INVERTING; SINK CURRENT:-ROHS COMPLI. FREE 2 YEAR RADWELL
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules 1200V 100A SIC IGBT CoPak
- Transistor Type: IGBT
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Supplier: ODG (Origin Data Global)
Description: 8A 1200V ESOP IGBT SIC IN T/R
- Operating Temperature: -40 to 125 C
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Supplier: ODG (Origin Data Global)
Description: IGBT WITH SIC COPACK DIODE IGBT
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Description: IGBT WITH SIC COPACK DIODE IGBT
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: IGBT WITH SIC COPACK DIODE IGBT
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A
- Transistor Type: IGBT
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Supplier: DigiKey
Description: DC-DC IGBT & SIC
- DC Input Voltage: 10.8 to 13.2 volts
- DC Output Current: 0.1110 amps
- Form Factor: Board Mount
- Type: DC/DC Converter
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Supplier: DigiKey
Description: DC-DC IGBT & SIC
- DC Output Current: 0.0660 to 0.3330 amps
- Form Factor: Board Mount
- Type: DC/DC Converter
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Supplier: DigiKey
Description: DC-DC IGBT & SIC
- DC Input Voltage: 10.8 to 13.2 volts
- DC Output Current: 0.1000 amps
- Form Factor: Board Mount
- Type: DC/DC Converter
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Supplier: DigiKey
Description: DC-DC IGBT & SIC
- DC Input Voltage: 21.6 to 26.4 volts
- DC Output Current: 0.1000 amps
- Form Factor: Board Mount
- Type: DC/DC Converter
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Supplier: ODG (Origin Data Global)
Description: DC-DC IGBT & SIC
- DC Input Voltage: 10.8 to 13.2 volts
- DC Output Current: 0.1110 amps
- DC Output Power: 2.05 watts
- DC Output Voltage: 15 volts
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Supplier: ODG (Origin Data Global)
Description: DC-DC IGBT & SIC
- DC Input Voltage: 13.5 to 16.5 volts
- DC Output Current: 0.1000 amps
- DC Output Power: 2 watts
- DC Output Voltage: 15 volts
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Description: 30KW Q1BOOST FULL SIC
- Transistor Type: IGBT
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Supplier: Utmel Electronic Limited
Description: IXYS SEMICONDUCTOR IXGH48N60C3C1 IGBT Single Transistor, SIC, 75 A, 2.5 V, 300 W, 600 V, TO-247AD, 3 Pins
- Polarity: N-Channel, Other
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: SIC_DISCRETE
- Package Type: Other
- Transistor Type: IGBT
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Description: 80KW GENII 1200V 80MOHM SIC MOSF
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module. Features High-Speed IGBT 4 Low voltage drop Low leakage current Low switching losses
- Transistor Type: IGBT
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Supplier: VAST STOCK CO., LIMITED
Description: IGBT Modules PIM 1200V 40A DU BST SiC DIODE
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: The MSCGLQ40X120CTYZBNMG device is a three-phase bridge, brake, soft start, and solenoid power module. Features Silicon Carbide (SiC) schottky diode IGBT4 Low stray inductance Lead frames for power connections Si3N4 substrate
- Transistor Type: IGBT
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Supplier: Richardson RFPD
Description: 50 kHz even without SiC technology, this module brings you the benefit of highest efficiency at lowest price. Features Latest IGBT S5 & L5 chipsets Highest efficiency at lowest price Low inductive layouts and packages Switching frequencies up to 50 k
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: The EVAL-1ED3142MU12F-SI C is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for
- Category: Development Board
- Supported System: Other
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Supplier: Littelfuse, Inc.
Description: The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: switching losses at switching speed above 30 kHz. Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Infineon Technologies AG
Description: IGBT technology addresses applications switching between 10 kHz and 40 kHz and due to high controllability and smooth switching behavior delivers not only high efficiency, but is easy to design-in. Combination of the TRENCHSTOP™ 5 S5 IGBT technology with the freewheeling SiC
- Package Type: TO-247, Other
- Transistor Type: IGBT
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Kelvin Emitter for improved switching performance Low inductive commutation loop Neutral Boost PFC Temperature sensor High speed and smooth switching Low gate charge Very low collector emitter saturation voltage Convex shaped substrate for superior thermal contact
- Configuration: Power Factor Correction (PFC)
- Output Current: 100 amps
- Output Voltage: 650 volts
- Technology: IGBT, Other / Specialty Technology
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Supplier: ROHM Semiconductor GmbH
Description: The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power
- PD: 214000 milliwatts
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor GmbH
Description: The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power
- PD: 178000 milliwatts
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor GmbH
Description: The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power
- PD: 254000 milliwatts
- Package Type: TO-247, Other
- Packing Method: Shipping Tube / Stick Magazine
- TJ: -55 to 175 C
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Supplier: Vincotech GmbH
Description: Kelvin Emitter for improved switching performance Temperature sensor Advanced Neutral Point Clamped topology MOSFET IGBT High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant
- Configuration: Other / Specialty Configuration
- Output Current: 160 amps
- Output Voltage: 1200 volts
- Technology: SiC, Other / Specialty Technology
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Supplier: Rochester Electronics
Description: SI8285BC - Automotive Isolated SiC and IGBT driver with feature-rich integrated dc-dc
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: SI8285DC - Automotive Isolated SiC and IGBT driver with feature-rich integrated dc-dc
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: SI8284BC - Isolated SiC and IGBT driver with feature-rich integrated dc-dc
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Rochester Electronics
Description: SI8285EC - Automotive Isolated SiC and IGBT driver with split output and Miller clamp
- Package Type: Other
- Transistor Type: IGBT
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Featured Products Top
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efficiency challenges as systems become smaller, denser and more power hungry,” says Gaetano Pignataro, Head of SiC & IGBT Product Group at Nexperia. “At Nexperia, we are focused on developing solutions that address these real system-level challenges. Our 1200 V SiC MOSFETs in QDPAK (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
vehicle market.” Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules (WIM), Nexperia, said: “Strong partnerships are essential to unlocking the full potential of wide bandgap technologies, including SiC and GaN. With our continued R&D investments and (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
its Si82Ex/Fx value and performance isolated gate drivers for silicon MOSFET, IGBT, SiC and GaN devices. Skyworks Solutions, Inc. provides an upgrade path for its Si823x (read more)
Browse LED Drivers Datasheets for Skyworks Solutions, Inc. -
Asymmetric regulated outputs suit IGBT, Si, SiC, and GaN cascode gate drives - It is now simpler than ever to generate power for IGBT, Si, SiC, and GaN cascode gate drivers with RECOM's R24C2T25 DC/DC converter from Richardson RFPD. The SMT part, in a compact 7.5 x 12.83mm 36-pin (read more)
Browse DC-DC Converter Chips Datasheets for Richardson RFPD -
mechanical stress, high resistance to thermal shock, high thermal conductivity, and high wear resistance. These properties allow it to withstand high dynamic stress and high temperature conditions. It is widely used as a heat dissipation material for IGBT and SiC MOSFET in automotive, electronics (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
Infineon is uniquely positioned in the power semiconductor market, mastering all power technologies from silicon (Si) like CoolMOS™ SJ MOSFETs and IGBTs to wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Its CoolGaN™ devices will (read more)
Browse Network Equipment Datasheets for DigiKey -
. MTE’s SyntriX AHF™ leverages silicon carbide (SiC) technology. which can result in an increase in system efficiency by up to 1% compared to an IGBT filter. For datacenters where power consumption is significant, this 1% difference is substantial (read more)
Browse Harmonic Filters Datasheets for MTE Corporation -
-generation vehicle architectures. By combining our wide bandgap semiconductor expertise – spanning both SiC and GaN – with the advanced system concepts of our partner IAV, we are enabling new approaches to e-mobility design from the ground up. Close collaboration at an early stage allows us to (read more)
Browse Transistors Datasheets for Nexperia B.V.
Conduct Research Top
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Wolfspeed SiC MOSFET-Based, Bidirectional, Three-Phase AC/DC Converters
This article demonstrates a design concept using commercially available SiC MOSFETs (C3M0065100K), which meets new market requirements for bidirectional functionality. A prototype 20-kW system in a simple two-level topology - switching at 48 kHz is shown. The prototype is tested to full power where
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1200V CoolSiC TM MOSFET: High Performance Complemented by High Reliability
The dedicated material properties of SiC enable the design of minority carrier free unipolar devices instead of the charge modulated IGBT devices.
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
More Information Top
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Advanced High Voltage Power Device Concepts
W. Sung, et al, “Design and Investigation of the Frequency Capability of 15 kV 4 H- SiC IGBTs ”, IEEE International Symposium on Power Semiconductor Devices and ICs, pp. 271–274, 2009.
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High temperature SiC trench gate p-IGBTs
The fabrication and characterization of high temperature SiC IGBTs with high current levels are presented.
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SiC and GaN Semiconductors Report - World - 2013
Looking further out, the SiC BJT device structure is a suitable base for SiC IGBT development in 8kV or 10kV applications.
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Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs
SiC BJTs do not show substantial conductivity modulation, SiC IGBTs depend upon it for a low forward drop for >10 kV switches.
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Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005
With the SiC IGBT , some observers believe it will be possible to use conventional, hard-switching designs, without multi-levels or cascaded modules, in applications from medium voltage (1,000 to 4,160 V) up to over 13,800 V.
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2013 Combined Subject Index IEEE Industry Applications Society Publications
Control technique for 15 kV SiC IGBT based active front end converter of a 13.8 kV grid tied 100 kVA transformerless intelligent power substation.
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2012 Combined Subject Index IEEE Industry Applications Society Publications
Afridi, Khurram K., +, ECCE Sept. 2012 4209-4216 Buffer layers High performance, ultra high voltage 4H- SiC IGBTs .
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2011 Combined Subject Index IEEE Industry Applications Society Publications
Goff, Jeremy K., +, ICEMS Aug. 2011 1-5 Transformer less Intelligent Power Substation design with 15kV SiC IGBT for grid interconnection.
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Comparison of 10-kV SiC power devices in solid-state transformer
In recent years, much progress has also been made in the development of high-voltage SiC IGBTs and thyristors [6]-[9].
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Smart grid technologies
For high-voltage power devices capable of 15–25-kV blocking, SiC IGBT technology becomes attractive because of its supe- rior on-state characteristic, fast switching speed, and excellent safe operating area (SOA).