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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:-; Power Dissipation Pd:250mW; DC Collector Current:100mA; DC Current Gain hFE:110hFE; Transistor Case Style:SOT-23; No.
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:600mA; Power Dissipation:330mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:300MHz RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR RF NPN SOT-23
- Number of Transistors in the Chip: 1
- TJ: -55 to 150 C
- Output Power: 0.225 watts
- Polarity: NPN
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:225mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: NPN TRANSISTOR 200MA 400V SOT-23
- Polarity: NPN
- Features: Other
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:40V; Continuous Collector Current:4A; Power Dissipation:350mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Transition Frequency:190MHz RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: NPN,TRANSISTORS,SOT-89 PACKAGE
- Polarity: NPN
- Features: Other
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Transistors - NPN+NPN, SOT-457, Dual Digital Transistor (Bias Resistor Built-in Transistor) -- IMH23Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 400V, 0.20A, SOT-23
- VCEO: 400 volts
- IC(max): 200 milliamps
- Transistor Type: General Purpose BJT
- Polarity: NPN
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, NPN GP SS 600MA 40V, SOT-23
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.);60 VDC (MAX.); 6.0 VDC (MAX.)
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Supplier: Utmel Electronic Limited
Description: SOT-23-3 Transistors (NPN/PNP) RoHS
- Polarity: NPN, PNP
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Supplier: ROHM Semiconductor GmbH
Description: BSS4130A is a SOT-23 package Transistor for low frequency amplifier, driver.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; SOT-23; NPN; 40 VDC (MAX.);75 VDC (MAX.); 6.0 VDC (MAX.); -55
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Supplier: ROHM Semiconductor GmbH
Description: The NPN general purpose transistor BC847C is designed for audio frequency small signal amplifier.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Allied Electronics, Inc.
Description: Transistor: 600mA 300mW NPN General-Purpose Amplifier, SOT-23, 7IN. Reel
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. Features and benefits High current (max. 800 mA) Low voltage (max. 40 V). AEC-Q101 qualified Applications Switching and linear applications.
- Transistor Grade / Operating Range: Automotive
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: Nexperia B.V.
Description: NPN Darlington transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: BCV26 Features and benefits Medium current of 500 mA Low voltage of 60 V High DC current gain of minimum 2000 Applications Preamplifier input amplification
- hfe: 10,000
- IC(max): 500 milliamps
- PD: 250 milliwatts
- Transistor Type: Darlington
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Supplier: Nexperia B.V.
Description: NPN switching transistor in a SOT23 plastic package. Features and benefits Low current (max. 200 mA) Low voltage (max. 15 V). AEC-Q101 qualified Applications High-speed switching, especially in portable equipment.
- Features: Other
- Package Type: SOT23
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) Product overview: MMBT5550 from Rectron USA is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers
- IC(max): 600 milliamps
- VCBO: 160 volts
- PD: 225 milliwatts
- Transistor Type: Bipolar RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT25
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT23, Bipolar Transistor, Single Bipolar
- Transistor Type: Bipolar RF Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Package Type: SOT23
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Supplier: ROHM Semiconductor USA, LLC
Description: These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT89
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Package Type: SOT23
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT25
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Transistor Type: General Purpose BJT
- Polarity: NPN
- Package Type: SOT23
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 500mW 400@100mA,1V 1.5A NPN SOT-89-3L Bipolar Transistors - BJT ROHS
- IC(max): 1,500 milliamps
- VCEO: 25 volts
- fT: 100 MHz
- PD: 500 milliwatts
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 12V 7GHZ SOT23
- IC(max): 100 milliamps
- VCEO: 12 volts
- Power Gain: 11.5 dB
- Noise Figure: 1.1 dB
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Supplier: DigiKey
Description: RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR NPN SWITCHING SOT23
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN+Di 50VCEO 0.15A SOT-363
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 213723-UMF23 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 140MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories:
- Polarity: NPN, PNP
- Features: Other
- Package Type: SOT3
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
Browse Transistors Datasheets for Win Source Electronics -
continuous drain current of 320mA, it provides reliable performance in diverse environments. The BSS138PW,115 is available in a SOT-323-3 package, making it suitable for SMD (SMT) mounting. Key Features: Type: N-Channel MOSFET (read more)
Browse Transistors Datasheets for Win Source Electronics -
components for a wide range of electronic circuits. Key Features: Device Type: NPN Bipolar Junction Transistor (BJT) Package: SOT-23 surface-mount package, ideal for automated assembly processes and space-constrained applications (read more)
Browse Thermistors Datasheets for Win Source Electronics -
and a smaller form factor while maintaining the system's low cost. With several product families, such as the CoolGaN Transistors 650 V G5, CoolGaN Transistors 700 V G5, CoolGaN Transistor Dual 650 V G5, and CoolGaN Drive HB 600 V G5, these power devices deliver the highest efficiency with high (read more)
Browse Transistors Datasheets for DigiKey -
Nexperia has expanded its portfolio of 650 V industrial-grade GaN FETs for power conversion applications. The range includes 35 mΩ, 50 mΩ and 70 mΩ devices in TO-247-3, TO-247-4, TOLL and TOLT packages. The additions give engineers greater flexibility to optimise efficiency, thermal performance and power density across datacenter, telecom, renewable energy, BESS and ind...
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Browse Transistors Datasheets for Nexperia B.V. -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
New Nexperia 600 V IGBTs. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors, robotics, elevators, operating grippers, in-line manufacturing, power inverters, UPS, photovoltaic strings, EV-charging, and induction heating and welding. The portfolio leads with devices across 30 - 75 A.
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Browse Transistors Datasheets for Nexperia B.V. -
The average supercapacitor has a maximum charging voltage of between 2.5 and 2.7 V. For many applications a voltage this low isn’t particularly useful, so the common practice is to place multiple
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supercapacitor in series. Unfortunately, manufactured supercapacitor may have a tolerance difference in capacitance, resistance and leakage current. These differences create an imbala...
Browse Transistors Datasheets for Advanced Linear Devices, Inc. -
IAV and Nexperia are exploring a new high-voltage EV architecture through the ONE Inverter concept. Combining IAV’s software-defined system and battery control expertise with Nexperia’s wide-bandgap semiconductor technologies, the approach enables more efficient use of battery capacity by dynamically managing battery sections and combining power electronics functions in one s...
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Browse Transistors Datasheets for Nexperia B.V. -
Integrated slip ring:101 power/control circuits &16 RF channels for 360° rotation signal transmission. DC~3.5GHz, RF peak 100W, average 50W, VSWR≤1.5. Physical isolation stops crosstalk. Aluminum shell, IP54, -5℃~+55℃ working temp. Transmit power, control, gigabit network & RF signals for industrial rotary equipment.
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Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd.
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Make Your Own PCBs with EAGLE: From Schematic Designs to Finished Boards > Example: An Arduino Shield
MMBT2222A NPN SOT23 transistor .
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https://www.duo.uio.no/bitstream/handle/10852/11056/Rensel_K_An_Attitude_Detumbling_System_for_the_CubeSTAR_Nano_Satellite.pdf?sequence=1
NPN TRANSISTOR SOT23 45V/0.5A 0.25W.
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SOT23 MP Transistor NPN .
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http://www.nxp.com/documents/user_manual/UM10409.pdf
NPN transistor ; SOT23 .
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Digitally addressable DALI dimming ballast
SOT23 MP Transistor NPN .
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Page 10. Semiconductor parts with 223 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 14. Semiconductor parts with 212 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 12. Semiconductor parts with 211 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 13. Semiconductor parts with 230 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 8. Semiconductor parts with 213 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .