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Supplier: Utmel Electronic Limited
Description: TRANSISTOR RF NPN SOT-23
- Polarity: NPN, Other
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Supplier: Utmel Electronic Limited
Description: NPN,TRANSISTORS,SOT- 89 PACKAGE
- Polarity: NPN, Other
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN SuperSOT
- Polarity: NPN, Other
- Transistor Type: General Purpose BJT, Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR, DIGITAL NPN SOT-523F
- Polarity: NPN, Other
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Package Type: Other
- Polarity: NPN
- Transistor Grade / Operating Range: Commercial
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Package Type: SOT23
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Nexperia B.V.
Description: NPN high-voltage transistor in a SOT23 plastic package. Features and benefits Low current (max. 300 mA) High voltage (max. 160 V) Applications General purpose
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: NPN transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. Features and benefits Low current (max. 100 mA) Low voltage (max. 60 V) Applications General purpose switching and amplification.
- IC(max): 100 milliamps
- Operating Frequency: 100 MHz
- PD: 250 milliwatts
- Package Type: SOT23, Other
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Supplier: Nexperia B.V.
Description: NPN Darlington transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. Features and benefits Medium current of 500 mA Low voltage of 30 V High DC current gain of minimum 4000 Qualified according to AEC-Q101 and recommended for use in automotive
- IC(max): 500 milliamps
- PD: 250 milliwatts
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 500mW 400@100mA,1V 1.5A NPN SOT-89-3L Bipolar Transistors - BJT ROHS
- Package Type: SOT89
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Category: Transistors Series: BFR181 Transistor Type: Bipolar Technology: Si Transistor Polarity: NPN Package / Case: SOT-323 Packaging: Reel Mounting Style: SMD/SMT Emitter Base Voltage (VEBO): 2 V
- Package Type: SOT3
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: TRANSISTOR NPN SWITCHING SOT23
- Package Type: SOT23, Other
- Polarity: NPN, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- IC(max): 300 milliamps
- PD: 200 milliwatts
- Package Type: SOT23, Other
- Packing Method: Tape Reel
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Supplier: DigiKey
Description: RF Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 12V 7GHZ SOT23
- Noise Figure: 1.1 dB
- Operating Frequency: 7000 MHz
- Output Power: 0.2000 watts
- Package Type: SOT23, Other
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Supplier: ROHM Semiconductor USA, LLC
Description: SST4401HZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier.
- PD: 200 milliwatts
- Package Type: SOT23, Other
- Packing Method: Tape Reel
- TJ: -55 to 150 C
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN+Di 50VCEO 0.15A SOT-363
- Transistor Type: Bipolar RF Transistors
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: SOT23
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 20000@5V,100mA 40V NPN 500mA 300mW SOT-23 Darlington Transistors ROHS
- IC(max): 500 milliamps
- PD: 300 milliwatts
- Package Type: SOT23
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability
- IC(max): 1000 milliamps
- PD: 500 milliwatts
- Package Type: SOT89, Other
- Polarity: NPN
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Supplier: Infineon Technologies AG
Description: NPN Silicon High-Voltage Transistors Summary of Features Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
- Package Type: SOT23, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Rochester Electronics
Description: NPN Bipolar Transistor
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Linear Systems
Description: The LS3250 Tightly Matched, Monolithic Dual, NPN Transistor is a Higher Current Version of the MP310, MP311, MP312, and MP313 Series. It is ideal for Higher Current, Small Signal Transistor, Super Beta, Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L
- Package Type: SOT23, Other
- Polarity: NPN
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Supplier: Linear Systems
Description: The LS310 Series Tightly Matched, Monolithic Dual, NPN Transistor is a direct replacement for Analog Devices MAT series and National LM3494 series. It is ideal for Tight Matching, Small Signal Transistor Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Description: TRANSISTOR DARL NPN SOT23-3
- Package Type: SOT23, Other
- Transistor Type: General Purpose BJT
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Supplier: Broadcom Inc.
Description: Microcurrent device offering good RF performance at 1mA-10mA. The AT-310XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=0.9dB, Gain=13dB at 3V, 1mA; P1dB= 9dBm at 3V, 10mA (all at 900 MHz)
- Package Type: SOT23, SOT143
- Polarity: NPN, Other
- Transistor Grade / Operating Range: Industrial
- Transistor Type: Bipolar RF Transistors
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Supplier: New Jersey Semi-Conductor Products, Inc.
Description: Trans GP BJT NPN 325V 30A 3-Pin(2+Tab) TO-3
- IC(max): 30000 milliamps
- Polarity: NPN
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Supplier: Rochester Electronics
Description: NSVMMUN2233 - NPN Bipolar Digital Transistor (BRT)
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, NPN, 15V, 100MA, SOT-23. FREE 2 YEAR RADWELL WARRANTY
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Supplier: RS Components, Ltd.
Description: NPN Darlington Transistor SOT-23 - Discrete Semiconductors - Darlington Transistors
- Package Type: SOT23, Other
- Polarity: NPN
- Transistor Type: Darlington
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Supplier: Acme Chip Technology Co., Limited
Description: NPN TRANSISTORS, SOT-23
- Package Type: Other
- Transistor Type: General Purpose BJT
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide (read more)
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continuous drain current of 320mA, it provides reliable performance in diverse environments. The BSS138PW,115 is available in a SOT-323-3 package, making it suitable for SMD (SMT) mounting. Key Features: Type: N-Channel MOSFET (read more)
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components for a wide range of electronic circuits. Key Features: Device Type: NPN Bipolar Junction Transistor (BJT) Package: SOT-23 surface-mount package, ideal for automated assembly processes and space-constrained applications (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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New Nexperia 600 V IGBTs. Ideally suited for industrial motor drive applications, including industrial motor drives like servo motors, robotics, elevators, operating grippers, in-line manufacturing, power inverters, UPS, photovoltaic strings, EV-charging, and induction heating and welding. The portfolio leads with devices across 30 - 75 A.
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High-performance WSF15N10 MOSFET in TO-252 package offers low on-resistance and fast switching, ideal for power management and motor control applications.
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IAV and Nexperia are exploring a new high-voltage EV architecture through the ONE Inverter concept. Combining IAV’s software-defined system and battery control expertise with Nexperia’s wide-bandgap semiconductor technologies, the approach enables more efficient use of battery capacity by dynamically managing battery sections and combining power electronics functions in one s...
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Nexperia has expanded its portfolio of 650 V industrial-grade GaN FETs for power conversion applications. The range includes 35 mΩ, 50 mΩ and 70 mΩ devices in TO-247-3, TO-247-4, TOLL and TOLT packages. The additions give engineers greater flexibility to optimise efficiency, thermal performance and power density across datacenter, telecom, renewable energy, BESS and ind...
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Page 10. Semiconductor parts with 223 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 14. Semiconductor parts with 212 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 12. Semiconductor parts with 211 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 13. Semiconductor parts with 230 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .
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Page 8. Semiconductor parts with 213 in root number
Small Signal Bias Resistor Transistor SOT23 , (TO236AB) NPN 50V .