Transistor Outline Package

Description: of raw material that can be quickly configured to your specific requirements. We invite you to explore our product offerings and contact us for any questions regarding your latest project. Transistor Outlines are classic packages that are still being used in today’s

Description: Qnnect, formerly Hermetic Solutions Group has extensive experience in manufacturing power packaging, including high thermal dissipation power packages and power transistor outline packages. We have the largest selection of open tooling, plus custom capabilities for any

• Features: Other

Description: The Avago HCPL-M453 is a power module interface optocoupler. This small outline high CMR, high speed, diode-transistor optocoupler is a single channel device in a five lead miniature footprint. Its SO-5 JEDEC registered (MO-155) package outline does not require "through

• Isolation Voltage: 3,750 volts
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -55 to 100 C
• Input: AC, DC

Description: Materion Corporation provides ceramic air cavity packages that are industry standard outlines for RF Power Transistors. These packages offer proven performance and reliability. The cost-effective packages are excellent platforms for wireless applications in the 500

• Shape / Form: Bar Stock
• Features: Other

Description: transmission and reception components. Transistor Outlines (TO) and Microelectronic Packages Hermetically sealed housings for high frequency components come in a range of designs, and enable large volumes of data to be transmitted in existing structures - particularly in TO

Description: DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT Product overview: MOCD213 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and

• Features: Bipolar RF Transistors

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, Bipolar Transistor, Transistor, Photovoltaic Output

• Features: Bipolar RF Transistors

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, SMD. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, SMD, Bipolar Transistor, Transistor, Photovoltaic

• Features: Bipolar RF Transistors

Description: stretched SO-8 package outline meeting 8mm creepage and clearance requirements, designed to be compatible with standard surface mount process This digital IPM optocoupler uses an insulating layer between the light emitting diode and an integrated photo detector to provide electrical

• Isolation Voltage: 1,140 volts
• Operating Temperature: -40 to 125 C
• Input: DC
• Features: Other

Description: Manufacturer: EPC Win Source Part Number: 918396-EPC2202 Series: Automotive, AEC-Q101, eGaN® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: N-Channel 80 V 18A (Ta) - Surface Mount Die Outline (6-Solder Bar) Package: Reel - TR Package: Die Mounting: Surface Mount

• Polarity: N-Channel
• Features: Other
• Package Type: SOT3

Description: Manufacturer: EPC Win Source Part Number: 870588-EPC2015 Series: eGaN® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: N-Channel 40 V 33A (Ta) - Surface Mount Die Outline (11-Solder Bar) Package: Reel - TR Package: Die Mounting: Surface Mount Part Status: Discontinued

• Polarity: N-Channel
• Features: Other
• Package Type: SOT3

Description: GaN Wideband Transistor 28 V, 4 W. The MAGX-011086 GaN HEMT is a wideband transistor optimized for DC - 6 GHz operation in a user friendly package ideal for high bandwidth applications. The device has been designed for saturated and linear operation with output power levels of 4

• Power Gain: 9 dB
• Output Power: 4 watts
• Operating Frequency: 0 to 6,000 MHz
• Features: Other

Description: Manufacturer: EPC Win Source Part Number: 918389-EPC2012C Series: eGaN® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: N-Channel 200 V 5A (Ta) - Surface Mount Die Outline (4-Solder Bar) Package: Die Package: Reel - TR Mounting: Surface Mount Family Name: EPC2012

• Polarity: N-Channel
• Features: Other
• Package Type: SOT3

Description: Manufacturer: EPC Win Source Part Number: 918388-EPC2010C Series: eGaN® Operating Temperature Range: -40°C ~ 150°C (TJ) Features: N-Channel 200 V 22A (Ta) - Surface Mount Die Outline (7-Solder Bar) Package: Die Package: Reel - TR Mounting: Surface Mount Family Name: EPC2010

• Polarity: N-Channel
• Features: Other
• Package Type: SOT3

Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching,

• P_D: 500 milliwatts
• Features: MOSFET, Other

Description: NPN/NPN resistor-equipped transistors (see ?Simplified outline, symbol and pinning? for package details). Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. AEC-Q101 qualified Applications Low

• Polarity: NPN
• Features: Other

Description: Features Connector & Contact Terminates To : Printed Circuit Board Package Outline Dimensions : TO-5 Product Type : Socket Terminal Configuration : Contact Termination Features Termination Method to Printed Circuit Board : Through Hole - Solder Usage Conditions Operating Temperature

• Current Rating: 3 amps
• Operating Temperature: -55 to 125 C
• Number of Contacts: 3
• Contact Plating: Gold Plating

Description: PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. AEC-Q101 qualified Applications General purpose

• Features: Other
• Polarity: PNP
• Package Type: SOT323

Description: PNP resistor-equipped transistor (see �Simplified outline, symbol and pinning� for package details). Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. AEC-Q101 qualified Applications General purpose

• Features: Other
• Polarity: PNP
• Package Type: SOT323

Description: Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD 206T⁄ 207T⁄ 217T come in a standard SOIC-8A small outline

Description: Active Bias Controller for various applications like cellular and cordless phones, DECT, WLAN, PHS and RF modems. The controllers are stabilizing the bias current for NPN transistors and FET’s Summary of Features Stable bias current supply, even at low battery voltage Low voltage drop Small

• Features: MOSFET, MOSFET RF Transistors, Other
• Packing Method: Tape Reel

Description: The IBS010 consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a leadless hermetic surface mount package. Features Hermetic 4-pin LCC package 1000Vdc isolation voltage High CTR Small package outline High reliability and rugged

• Isolation Voltage: 1,000 volts
• Rise Time: 20 µs
• Collector Emitter Breakdown Voltage: 60 volts
• Operating Temperature: -55 to 125 C

Description: The IBI100 consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a leadless hybrid surface mount package. Features Hybrid 6-pin package 1500Vdc isolation voltage High CTR Small package outline High reliability and rugged construction High

• Isolation Voltage: 1,500 volts
• Rise Time: 5 to 15 µs
• Collector Emitter Breakdown Voltage: 30 volts
• Operating Temperature: -55 to 125 C

Description: circuits. Conveniently packaged in a low profile Surface Mount Package. Features Small outline Surface Mount High Noise Immunity Buffer Open Collector Reception Angle 130O RoHS compliant

• Supply Voltage: 16 volts
• Output Type: Current Output
• Module Type: PN Photodiode

Description: The SY100ELT23 are dual differential PECL-to-TTL translators. Because PECL (Positive ECL) levels are used, only +5V and ground are required. The small outline 8-lead SOIC package and the low skew, dual gate design of the ELT23 makes it ideal for applications which require the

• Input Voltage: 5 volts
• Translation Voltage (Output): 2.5 volts
• Propagation Delay: 3.5 ns
• Operating Current: 30 mA

Description: The IBS049 consists of a phototransistor optically coupled to an AlGaAs infrared-emitting diode in a leadless hermetic surface mount package. Features Hermetic 4-pin LCC package 1000Vdc isolation voltage High CTR Small Outline package High reliability and rugged

• Isolation Voltage: 1,000 volts
• Rise Time: 25 µs
• Collector Emitter Breakdown Voltage: 60 volts
• Operating Temperature: -55 to 125 C

Description: Optical Sensor Product Type : Detector Sensor Package : Transistor Outline (TO) Signal Characteristics Operating Wavelength (NANOM) : 350 - 1100 Usage Conditions Operating Temperature Range : -40 - 212 DEGC  [-40 - 212 DEGF ]

• Operating Temperature: -40 to 413.6 F
• Features: Photoelectric Sensors

Description: Package: Isolation Voltage: 2500 V~ Industry convenient Outline RoHS compliant Epoxy meets UL 94V-0 Soldering Pins for PCB Mounting Backside: DCB Ceramic Reduced Weight Advanced Power Cycling Low Drain to Tab Capacitance (< 40 pF) MOSFET Low RDS(ON) and QG Fast Switching Robust Design

Description: The 61010 is an N-P-N Planar Silicon Photodarlington Transistor in a small outline package designed to be housing mounted. Its large effective aperture and narrow angular response make this a highly sensitive device with minimum response to off-axis or stray light. This sensor

• Sensitivity: 100 A/W
• Spectral Response Range: 290 to 1,200 nm
• Rise Time: 50,000 ns
• Operating Temperature: -55 to 125 C

Description: chains. The SKY65173-70LF uses low-cost Surface-Mount Technology (SMT) in the form of a 4-pin, 2.4 x 4.5 mm Small Outline Transistor (SOT-89) package.

• Frequency Range: 869 to 960 MHz
• Minimum Gain: 16.5 dB
• Maximum Gain: 16.5 dB
• Noise Figure: 2.6 dB

Description: chains. The SKY65173-70LF uses low-cost Surface-Mount Technology (SMT) in the form of a 4-pin, 2.4 x 4.5 mm Small Outline Transistor (SOT-89) package.

• Frequency Range: 869 to 960 MHz
• Maximum Gain: 16.5 dB
• Output Power( P_1dB): 26.5 dBm
• Noise Figure: 2.6 dB

Description: Technology with 0/+15..+18 V gate drive High-performance ceramic based isolated package Isolation voltage 2500 VAC (RMS), 1 minute Low input capacitance 4532 pF Industry standard package outline

• V_(BR)DSS: 1,200 volts
• I_DSS: 80,000 milliamps
• T_J: 150 C
• MOSFET Operating Mode: Enhancement

Description: for use in the driver stage of infrastructure transmit chains. The SKY65162-70LF uses low-cost surface-mount technology (SMT) in the form of a 4-pin, 2.4 x 4.5 mm small outline transistor (SOT-89) package.

• Frequency Range: 400 to 2,700 MHz
• Minimum Gain: 13.2 dB
• Maximum Gain: 20 dB
• Minimum Operating Voltage: 5 volts

Description: The ACPL-K49U is a single channel, high temperature, high CMR, 20 kBd digital optocoupler, configurable as a low power, low leakage phototransistor, specifically for use in industrial applications. The stretched SO-8 stretched package outline is designed to be compatible with standard

• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 125 C
• Input: DC
• Output: Phototransistor

Description: OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170170N04LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products. The N+N dual channel MOSFETs are a perfect solution for applications

• r_DS(on): 0.017 ohms
• T_J: -55 to 150 C
• V_GS(off): 1.1 to 2.7 volts
• Features: MOSFET, Other, Power MOSFET