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Supplier: Electro Optical Components, Inc.
Description: practice relatively "slow". Therefore there is a direct conflict between the requirements of fast switching and a large aperture and it is not possible to obtain ultra fast switching in large aperture cells. The UPC still provides a moderately large aperture of approximately 5mm
- Q-switch Type: Electro-optic
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1.2 volts
- IF: 1,500 mA
- VR: 400 volts
- Tj: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1.7 volts
- IF: 10,000 mA
- VR: 600 volts
- Pin Count: 2
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Supplier: Infineon Technologies AG
Description: LNAs BGA824N6 | GNSS LNAs BGSX22G6U10 | Antenna cross switches BGA855N6 | GNSS LNAs BGA824N6 | GNSS LNAs BGSX22G6U10 | Antenna cross switches BGA855N6 | GNSS LNAs BGA824N6 | GNSS LNAs BGSX22G6U10 | Antenna cross switches
- Frequency Range: 400 to 6,000 MHz
- Insertion Loss: 0.48 dB
- Isolation (Port to Port): 63 dB
- Actuator Voltage: 1.65 to 1.95 volts
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1.3 volts
- IF: 10,000 mA
- VR: 300 volts
- Pin Count: 3
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 0.9 volts
- IF: 8,000 mA
- VR: 200 volts
- Tj: -55 to 150 C
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The Q845 ultra-fast power supply is designed for envelope tracking (ET) for 3G/4G/LTE RF PAs. It also supports average power tracking (APT). Using patented qBoostTM technology, the Q845
- Regulated Output Voltage (Volt): 0.25 to 0.98 volts
- Quiescent Current (IQ): 0.00009 amps
- Features: Other
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Supplier: Infineon Technologies AG
Description: 4G/5G MIPI LNA and LNA Bank BGA824N6 | GNSS LNAs BGSX24MU16 | Antenna cross switches BGSX22G5A10 | Antenna cross switches BGA9V1MN9 | 4G/5G MIPI LNA and LNA Bank BGSA149MN10 | Antenna tuners BGC100GN6 | Coupler BGSA147ML10 | Antenna tuners BGSX33M5U16 | Antenna cross switches
- Frequency Range: 40 to 7,125 MHz
- Insertion Loss: 0.2 dB
- Isolation (Port to Port): 46 dB
- Actuator Voltage: 1.65 to 1.95 volts
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Supplier: Richardson RFPD
Description: The PE42545 is a HaRP technology-enhanced reflective SP4T RF switch die that supports a wide frequency range from 9 kHz to 67 GHz. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement, 5G mmWave, microwave
- Frequency Range: 0.009 to 67,000 MHz
- Insertion Loss: 2.6 dB
- Isolation (Port to Port): 36 dB
- Switching Speed: 0.000075 ms
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Supplier: Infineon Technologies AG
Description: RF Switches BGS15MU14 | RF Switches BGA855N6 | GNSS LNAs BGA824N6 | GNSS LNAs BGS12WN6 | RF Switches BGS12P2L6 | RF Switches BGS15MU14 | RF Switches BGA855N6 | GNSS LNAs BGA824N6 | GNSS LNAs BGS12WN6 | RF Switches 1
- Frequency Range: 400 to 7,125 MHz
- Insertion Loss: 0.29 dB
- Isolation (Port to Port): 37 dB
- Features: Other
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Supplier: Nexperia B.V.
Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits Low conduction losses
- Features: Other
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Supplier: ROHM Semiconductor GmbH
Description: R6004KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
- V(BR)DSS: 600 volts
- IDSS: 4,000 milliamps
- QG: 10.2 nC
- PD: 40,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: R6011KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
- V(BR)DSS: 600 volts
- IDSS: 11,000 milliamps
- QG: 21.999999999999996 nC
- PD: 53,000 milliwatts
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Supplier: Richardson RFPD
Description: themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and
- VR: 90 volts
- Operating Frequency: 100 to 18,000 MHz
- CT: 0.026 pF
- Features: Other, RF Diodes
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Supplier: Mini-Circuits
Description: Mini-Circuits’ MSW2-50+ is a reflective GaAs MESFET SPDT MMIC Switch supporting a wide range of switching applications from DC to 5000 MHz. This model provides high isolation and ultra-fast switching 5ns Rise/Fall time. It is produced using GaAs MESFET process and comes in a tiny 3x3mm
- Frequency Range: 5,000 MHz
- Insertion Loss: 0.5 to 2.2 dB
- Isolation (Port to Port): 89 dB
- Operating Temperature: -40 to 85 C
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Supplier: Mini-Circuits
Description: Mini-Circuits’ MSWA2-50+ is an absorptive GaAs MESFET SPDT MMIC Switch supporting a wide range of switching applications from DC to 5000 MHz. This model provides high isolation and ultra-fast switching 5ns Rise/Fall time. It is produced using GaAs MESFET process and comes in a tiny
- Frequency Range: 5,000 MHz
- Insertion Loss: 0.5 to 2.4 dB
- Isolation (Port to Port): 88 dB
- Operating Temperature: -40 to 85 C
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Supplier: Infineon Technologies AG
Description: The BGSA406MN10 is a versatile shunt to ground 4xsingle-pole single-throw (4xSPST) RF antenna tuning switch optimized for applications up to 7.125GHz. The BGSA406MN10 is a versatile shunt to ground 4xsingle-pole single-throw (4xSPST) RF antenna tuning switch. It is optimized for low
- Features: Other
- Type: SP4T
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Supplier: ValueTronics International, Inc.
Description: The 68117C is a 8.4 GHz RF Generator from Anritsu. An RF generator is a tool engineers use to generate sinusoidal outputs while testing electronic equipment. The output will automatically have its frequency varied or swept between frequencies. A “sweep” is one complete cycle of a
- Minimum Frequency Range: 8,400 MHz
- Maximum Frequency Range: 8,400 MHz
- Device Type: Generator
- Generator Type: Signal, Sweep
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Supplier: Microchip Technology, Inc.
Description: Ultra-Low Current Consumption: SLEEP=0.02 μA TRX_OFF=0.4 mA RX_ON=12.3 mA BUSY_TX=14 mA (at max. Transmit Power of +3 dBm) Ultra-Low Supply Voltage (1.8V to 3.6V) with Internal Regulator Optimized for Low BoM Cost and Ease of Production: Few External Components Necessary (Crystal,
- Operating Temperature: -40 to 125 C
- Features: Other
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Supplier: Richardson RFPD
Description: The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
- Features: IGBT, Other
- Package Type: TO-247
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Supplier: ROHM Semiconductor USA, LLC
Description: R6024KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
- V(BR)DSS: 600 volts
- IDSS: 24,000 milliamps
- QG: 45 nC
- PD: 74,000 milliwatts
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Supplier: ROHM Semiconductor USA, LLC
Description: R6030KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
- V(BR)DSS: 600 volts
- IDSS: 30,000 milliamps
- QG: 55.99999999999999 nC
- PD: 86,000 milliwatts
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C Ultra fast switching for operation at less than 100kHz High voltage: 500 V for off-line SMPS High current: 9 A for up to 350 W SMPS The NTE2393 is an N-channel enhancement mode power MOSFET. Easy drive and
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Supplier: Mini-Circuits
Description: Mini-Circuits’ USB-1SP4T-183 is a fast switching solid-state SP4T covering an ultra-wide bandwidth from 0.1 to 18 GHz. The solid-state design features an impressive combination of high isolation, low insertion loss and good linearity across the entire band. The switch is supplied in a
- Frequency Range: 100 to 18,000 MHz
- Insertion Loss: 2.5 to 6 dB
- Isolation (Port to Port): 70 dB
- Operating Temperature: 0 to 50 C
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Supplier: Mini-Circuits
Description: Mini-Circuits’ USB-1SP8T-34 is a fast switching solid-state SP8T covering an ultra-wide bandwidth from 0.1 to 30 GHz. The solid-state design features an impressive combination of high isolation, low insertion loss and good linearity across the entire band. The switch is supplied in a
- Frequency Range: 100 to 30,000 MHz
- Insertion Loss: 2.8 to 9.5 dB
- Isolation (Port to Port): 90 dB
- Operating Temperature: 0 to 50 C
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Supplier: Corech Microwave
Description: The CSG9K40GA is a metrology-grade signal generator covering 9kHz to 40GHz (43GHz Ext.). Engineered for mission-critical applications, it delivers -112 dBc/Hz phase noise (at 10GHz) and ultra-fast 50 ns frequency switching (≥100 MHz). Featuring a high-dynamic range output (-120 to +17
- Maximum Input Channels: 1
- Minimum Frequency Range: 0.009 MHz
- Maximum Frequency Range: 40,000 to 43,000 MHz
- Switching Speed: 0.00005 ms
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Supervisory Circuits and Battery Monitor Chips - RF Energy Harvesting Management Circuit -- AEM30330Supplier: e-peas SA
Description: Highly Versatile, Regulated Single-Output, Buck-Boost Ambient Energy Manager for RF Sources with Optional Primary Battery E-peas’ low-frequency AC sources energy harvesting IC solution – The AEM30330 is an integrated energy management circuit that extracts DC power from an ambient energy
- Pin Count: 40
- Supply Voltage (Vi): 1.2 to 3.3 volts
- Type: QFN
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Supplier: Corech Microwave
Description: The CAMS9K40G is a metrology-grade analog signal generator covering 9kHz to 40GHz (43GHz Ext.). Engineered for wideband system verification, it features AM, FM, Phase (ØM), and Pulse modulation as standard. With typical phase noise of -109 dBc/Hz (at 10GHz) and ultra-fast 50 ns
- Maximum Input Channels: 1
- Minimum Frequency Range: 0.009 MHz
- Maximum Frequency Range: 20,000 to 43,000 MHz
- Switching Speed: 0.00005 ms
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Supplier: Corech Microwave
Description: The CAMS9K20G is a metrology-grade analog signal generator covering 9kHz to 20GHz (21.5GHz Ext.). Engineered for complex signal simulation, it features AM, FM, Phase (ØM), and Pulse modulation as standard. With typical phase noise of -109 dBc/Hz (at 10GHz) and ultra-fast 50 ns
- Maximum Input Channels: 1
- Minimum Frequency Range: 0.009 MHz
- Maximum Frequency Range: 20,000 to 21,500 MHz
- Switching Speed: 0.00005 ms
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Supplier: ValueTronics International, Inc.
Description: two RF input ports and the test head has an RF docking interface with 10 RF output ports. An optional 8 x 10 RF matrix is available and measurements from DC to 20 GHz are also possible. The system hardware and software support an Agilent PNA network analyzer for making
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Ultra small package: 0.96 × 0.96 × 0.24 mm
- V(BR)DSS: 12 volts
- IDSS: 14,000 milliamps
- VGS(off): 0.6 volts
- rDS(on): 0.021 ohms
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic
- V(BR)DSS: -20 volts
- IDSS: -530 milliamps
- VGS(off): 0.7 volts
- rDS(on): 2.2 ohms
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Supplier: Nexperia B.V.
Description: P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic
- V(BR)DSS: -30 volts
- IDSS: -520 milliamps
- VGS(off): 0.7 volts
- rDS(on): 2.7 ohms
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Supplier: Allied Electronics, Inc.
Description: Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low
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Supplier: Maury Microwave
Description: The SGX1000 series of RF signal generators offer high performance signal generation with an easy-to-use interface in a compact form factor. The SGX1000 utilizes a proprietary blend of direct digital and direct analog synthesis to provide ultra-fine frequency resolution,
- Minimum Frequency Range: 10 MHz
- Maximum Frequency Range: 18,000 MHz
- Switching Speed: 0.35 ms
- Device Type: Generator
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Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
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Ellipsometry at the Nanoscale
The development of new types of ultra - fast switches operating in the RF -microwave and optical domains is based on the use of a class of materials undergoing fast, reversible phase transitions from a semiconducting state to a metallic one (Semicon- ductor…
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Active RF Pulse Compression using Electrically Controlled Semiconductor Switches
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Abstract Submitted
for the APR06 Meeting of
The American Physical Society
Ultrafast Silicon Switch JIQUAN GUO, SAMI TANTAWI, Stanford Linear Ac- celerator Center/ Stanford University — In this paper, we present the recent results of our research on the ultra -high power fast silicon RF switch and its application on active X-Band…
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High resolution ultrawideband wall penetrating radar
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