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Supplier: Electro Optical Components, Inc.
Description: expected to be found on most ultra-fast rise time drivers. This ensures that the waveform suffers no distortions due to electrical mis-match and cable reflections which could re-open the cell after a short time delay are minimized. Most Pockels cells which use a 50W r.f. type connector
- Q-switch Type: Electro-optic
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- Diode Type: Step-recovery Diodes
- IF: 5000 mA
- RoHS Compliant: Yes
- VF: 1.7 volts
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- Diode Type: Step-recovery Diodes
- IF: 200 mA
- RoHS Compliant: Yes
- VF: 0.9800 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- IF: 10000 mA
- RoHS Compliant: Yes
- Tj: -55 to 150 C
- VF: 1.3 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- IF: 5000 mA
- RoHS Compliant: Yes
- Tj: -55 to 150 C
- VF: 0.9000 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- IF: 200 mA
- RoHS Compliant: Yes
- Tj: -40 to 150 C
- VF: 1 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- IF: 1000 mA
- RoHS Compliant: Yes
- Tj: -55 to 150 C
- VF: 0.9000 volts
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- Diode Type: Step-recovery Diodes
- IF: 10000 mA
- RoHS Compliant: Yes
- VF: 1.3 volts
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Supplier: ROHM Semiconductor GmbH
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- Diode Type: Step-recovery Diodes
- IF: 1000 mA
- RoHS Compliant: Yes
- VF: 0.8700 volts
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Supplier: Richardson RFPD
Description: UltraCMOS® SPDT RF Switch 100 - 2700 MHz. The PE42821 is a HaRP™ technology-enhanced high power reflective SPDT RF switch designed for use in mobile radio, relay replacement and other high performance wireless applications. This switch is a pin-compatible
- Actuator Type: SPDT, Other
- Frequency Range: 100 to 2700 MHz
- Insertion Loss: 0.6000 dB
- Isolation (Port to Port): 28 dB
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Supplier: Richardson RFPD
Description: The PE42462 is a HaRP™ technology-enhanced absorptive SP6T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF
- Actuator Type: Other
- Frequency Range: 10 to 8000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 42 dB
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Supplier: Richardson RFPD
Description: The PE42412 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF
- Actuator Type: SP12T, Other
- Frequency Range: 10 to 8000 MHz
- Insertion Loss: 1.1 dB
- Isolation (Port to Port): 38 dB
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Supplier: Richardson RFPD
Description: delivers high isolation, low insertion loss, and fast switching time, making this device ideal for filter bank switching and RF signal routing in test and measurement (T&M) and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not
- Actuator Type: SP12T, Other
- Frequency Range: 0.0090 to 8000 MHz
- Insertion Loss: 1.1 dB
- Isolation (Port to Port): 44 dB
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Supplier: Infineon Technologies AG
Description: Fast switching speed (180 ns). MIPI RFFE 2.1 compliant control interface Small package 1.5mm x 1.9mm Ultra low profile leadless plastic package RoHS and WEEE compliant package Potential Applications Feedback receive application in 5G
- Actuator Type: Other
- Actuator Voltage: 1.65 to 1.95 volts
- Control Interface: Other
- Frequency Range: 400 to 6000 MHz
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Supplier: Infineon Technologies AG
Description: available board real estate. Summary of Features Frequency range from 0.05 to 9 GHz Small size 0.7 × 1.1 mm2 and ultra-low profile of 0.375 mm height max Fast switching speed Low insertion loss and high port to port isolation up to 9 GHz RF
- Actuator Type: SPDT, Other
- Actuator Voltage: 1.65 to 3.6 volts
- Control Interface: Other
- Frequency Range: 50 to 9000 MHz
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The Q845 ultra-fast power supply is designed for envelope tracking (ET) for 3G/4G/LTE RF PAs. It also supports average power tracking (APT). Using patented qBoostTM technology, the Q845
- IC Package Type: Other
- Quiescent Current (IQ): 9.00E-5 amps
- Regulated Output Voltage (Volt): 0.2500 to 0.9800 volts
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Supplier: Infineon Technologies AG
Description: High Power SP4T MIPI RF Switch The BGS14M8U9 is a Single Pole Four Throw (SP4T) high power switch in a compact 9-pin package (1.1 x 1.1 mm2). The device is optimized for 5G and other cellular applications up to 7.125 GHz. With a low insertion loss, high isolation, high
- Actuator Type: SP4T, Other
- Actuator Voltage: 1.65 to 1.95 volts
- Control Interface: Other
- Frequency Range: 40 to 7125 MHz
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Supplier: Infineon Technologies AG
Description: isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V-3.6V. BGSX22G6U10 features direct-connect-to-ba ttery
- Actuator Type: Other
- Control Interface: Other
- Frequency Range: 400 to 7125 MHz
- Insertion Loss: 0.2900 dB
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Supplier: ValueTronics International, Inc.
Description: Bm (–20 dBm typical) Output power with an attenuator: –120 dBm Output power with an electronic attenuator: –140 dBm Ultra-low SSB phase noise and spurious +17 dBm guaranteed leveled power to 20 GHz <5 ms switching time for <100 MHz sweep
- Device Type: Generator
- Generator Type: Signal, Sweep
- Maximum Frequency Range: 8400 MHz
- Minimum Frequency Range: 8400 MHz
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Supplier: ValueTronics International, Inc.
Description: dBm typical) Output power with an attenuator: –120 dBm Output power with an electronic attenuator: –140 dBm Ultra-low SSB phase noise and spurious +17 dBm guaranteed leveled power to 20 GHz <5 ms switching time for <100 MHz sweep steps
- Device Type: Generator
- Generator Type: Signal, Sweep
- Maximum Frequency Range: 60000 MHz
- Minimum Frequency Range: 60000 MHz
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Supplier: ValueTronics International, Inc.
Description: dBm typical) Output power with an attenuator: –120 dBm Output power with an electronic attenuator: –140 dBm Ultra-low SSB phase noise and spurious +17 dBm guaranteed leveled power to 20 GHz <5 ms switching time for <100 MHz sweep steps
- Device Type: Generator
- Generator Type: Signal, Sweep
- Maximum Frequency Range: 65000 MHz
- Minimum Frequency Range: 65000 MHz
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Supplier: ValueTronics International, Inc.
Description: dBm typical) Output power with an attenuator: –120 dBm Output power with an electronic attenuator: –140 dBm Ultra-low SSB phase noise and spurious +17 dBm guaranteed leveled power to 20 GHz <5 ms switching time for <100 MHz sweep steps
- Device Type: Generator
- Generator Type: Signal, Sweep
- Maximum Frequency Range: 50000 MHz
- Minimum Frequency Range: 50000 MHz
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Supplier: Microchip Technology, Inc.
Description: Feature rich, low-power 2.4GHz transceiver designed for industrial and consumer IEEE 802.15.4, ZigBee, RF4CE, SP100, WirelessHART™, ISM, and high data rate applications. It is a true SPI-to-antenna solution providing a complete radio transceiver interface between the antenna and
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
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Supplier: Microchip Technology, Inc.
Description: = 0.2µA TRX_OFF = 450µA RX_ON = 9.2mA BUSY_TX = 18.0mA at TX output power +5dBm Ultra-low supply voltage (1.8V to 3.6V) with internal regulator Easy to use interface: Registers, frame buffer, and AES accessible through fast SPI
- IC Package Type: Other
- Operating Temperature: -40 to 85 C
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Supervisory Circuits and Battery Monitor Chips - RF Energy Harvesting Management Circuit -- AEM30330Supplier: e-peas SA
Description: Highly Versatile, Regulated Single-Output, Buck-Boost Ambient Energy Manager for RF Sources with Optional Primary Battery E-peas’ low-frequency AC sources energy harvesting IC solution – The AEM30330 is an integrated energy management circuit that extracts DC power from an
- Package Type: QFN
- Pin Count: 40
- Supply Voltage (Vi): 1.2 to 3.3 volts
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Supplier: Microchip Technology, Inc.
Description: /RMII interface with MDC/MDIO management interface for register configuration On-chip termination resistors for the differential pairs LinkMD®+ receive signal quality indicator Fast start-up and link Ultra-Deep Sleep standby mode: CPU or signal detect activated Loopback modes for
- Form Factor / Package: Surface Mount Technology (SMT), Other
- Operating Temperature: -40 to 105 C
- Supply Voltage: 3.3 volts
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Supplier: Microchip Technology, Inc.
Description: loop (up to 500kHz) which allows ultra fast transient response times. This is very useful when powering applications that require fast dynamic response such as CPU cores and RF circuitry in high performance cellular phones and PDAs. The MIC2202 is available in 10-pin MSOP
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
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Supplier: Pickering Electronics
Description: The Pickering Series 103 is a range of Single-in-Line reed relays intended for such applications as wide bandwidth A.T.E. switching matrices, attenuator switching or any other applications where exceptionally low levels of inter-terminal capacitances are required, for example, when
- Changeover (CO): 0.0
- Coil Resistance: 500 ohms
- DC Coil Voltage: 5 volts
- Maximum Current: 0.5000 amps
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Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
We present the recent results of our research on the high power ultra - fast silicon RF switches .
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Development of Ultra-Fast Silicon Switches for Active X-Band High Power RF Compression Systems
In this paper, we present the recent results of our re- search on the high power ultra - fast silicon RF switches .
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Active RF Pulse Compression using Electrically Controlled Semiconductor Switches
In this paper, we will present our recent results on the research of the ultra - fast high power RF switches based on silicon.
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MP SoCs including optical interconnect: technological progresses and challenges for CAD tools design
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Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches
In this paper, we present the recent results of our research on the ultra -high power fast silicon RF switch and its application on active X-Band RF pulse compression systems.
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Ellipsometry at the Nanoscale
The development of new types of ultra - fast switches operating in the RF -microwave and optical domains is based on the use of a class of materials undergoing fast, reversible phase transitions from a semiconducting state to a metallic one (Semicon- ductor…
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Active RF Pulse Compression using Electrically Controlled Semiconductor Switches
In this paper, we present the recent results of our research on the ultra -high power fast silicon RF switch and its application on active X-Band RF pulse compression systems.
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Abstract Submitted
for the APR06 Meeting of
The American Physical Society
Ultrafast Silicon Switch JIQUAN GUO, SAMI TANTAWI, Stanford Linear Ac- celerator Center/ Stanford University — In this paper, we present the recent results of our research on the ultra -high power fast silicon RF switch and its application on active X-Band…
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APS -2006 APS April Meeting - Event - An Active X-Band High Power RF Compression System Using an Ultrafast Silicon Switch
In this paper, we present the recent results of our research on the ultra -high power fast silicon RF switch and its application on active X-Band RF pulse compression systems.
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High resolution ultrawideband wall penetrating radar
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