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Supplier: Linear Systems
Description: The ID100 Series Monolithic Dual, Pico Amp Low Leakage Diodes is a direct replacement for the Intersil equivalent part. It is ideal for Pico Amp, Ultra Low Leakage, Protection Diode Applications. Available in TO-71 6L ROHS and TO-78 6L ROHS package,
- Diode Applications: Low Leakage
- RoHS Compliant: RoHS Compliant
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Supplier: Nexperia B.V.
Description: Epitaxial medium-speed switching diode with a low leakage current in an ultra small SOD523 (SC-79) SMD plastic package. Features and benefits Plastic SMD package Low leakage current: typ. 0.2 nA Switching time: typ. 0.6 us Continuous reverse voltage: max. 75
- Diode Applications: Low Leakage
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Supplier: Nexperia B.V.
Description: Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. Features and benefits High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse
- VF: 1,000 to 1 volts
- IF: 320 mA
- VR: 75 volts
- IR: 0.000005 mA
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Supplier: Nexperia B.V.
Description: Epitaxial, medium-speed switching, double diode in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits Switching time: trr = 0.8 μs Maximum leakage current: IR = 5 nA Repetitive peak reverse
- Diode Applications: Low Leakage, Switching
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- VF: 1.25 volts
- VR: 100 volts
- IR: 0.000005 mA
- trr: 3,000 ns
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Supplier: Nexperia B.V.
Description: Epitaxial, medium-speed switching, electrically isolated dual diode in an ultra small SOT363 Surface-Mounted Device (SMD) plastic package. Features and benefits Low leakage current: maximum 5 nA Switching time: typical 0.8 µs Continuous reverse voltage: maximum 75 V
- VF: 1,000 to 1 volts
- VR: 75 volts
- IR: 0.000005 mA
- Diode Applications: Low Leakage, Switching
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- VF: 0.7 volts
- IF: 1 mA
- VR: 250 volts
- IR: 0.0001 mA
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Supplier: Littelfuse, Inc.
Description: The SP3010-04UTG integrates 4 channels of ultra-low capacitance rail-to-rail diodes and an additional zener diode to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). This robust device can safely absorb repetitive
- VR: 6 volts
- CT: 0.45 pF
- Features: Array, Bidirectional
- RoHS Compliant: RoHS Compliant
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Supplier: Littelfuse, Inc.
Description: The SP3002 has ultra low capacitance rail-to rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive
- CT: 0.85 pF
- Features: Array, Bidirectional
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS), Zener Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: Littelfuse, Inc.
Description: The SP3002 has ultra low capacitance rail-to rail diodes with an additional zener diode fabricated in a proprietary silicon avalanche technology to protect each I/O pin providing a high level of protection for electronic equipment that may experience destructive
- VR: 6 volts
- CT: 0.85 pF
- Features: Array, Bidirectional
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS), Zener Diodes
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Supplier: Littelfuse, Inc.
Description: 2pF, 20kV, Low Capacitance Diode Array for ESD and Surge Protection The SRV05 integrates low capacitance rail-to-rail diodes with an additional zener diode to protect each I/O pin against ESD and high surge events. This robust device can safely absorb surge current
- VR: 6 volts
- CT: 2.4 pF
- Features: Array, Bidirectional
- RoHS Compliant: RoHS Compliant
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Supplier: MACOM
Description: Very Low Voltage, Low Leakage Sharp Knee, Low Impedance Low Current: 250 µA - Low Noise Ultra-Low Current: 50 μA – Low Leakage
- IR: 0.00000040000000000000003 to 0.00005 mA
- Features: Other
- Diode Type: Zener Diodes
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- IR: 0.007 mA
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB088BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Allied Electronics, Inc.
Description: Ultra Fast Silicon Rectifier, 8 A Forward Current, TO-220 Package Type Ultrafast 50ns recovery time Low forward voltage Low leakage current High temperature glass passivated function The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in
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Supplier: PANJIT SemiConductor
Description: Low series resistance, low capacitance, available in ultra small packages
- VR: 100 volts
- IR: 0.000005 mA
- trr: 3,000 ns
- Tj: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RB218BM200FH is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically
- VF: 0.88 volts
- IF: 10,000 mA
- VR: 200 volts
- VRRM: 200 volts
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Supplier: Richardson RFPD
Description: 50 ns Ultra-Fast Recovery High Voltage Rectifier Diodes|•PRV to 5,000 Volts|•50 ns ultra-fast recovery|•Small size|•Exceptionally low leakage|•High surge capability|•Avalanche characteristics
- IF: 8,000 mA
- trr: 50 ns
- Features: Fast / Ultra Fast Recovery Rectifier, Other
- Diode Applications: Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: FRED Si diode Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Low stray inductance Outstanding performance at high frequency operation Low losses Direct mounting to heatsink (isolated package)
- VF: 1.6 volts
- VR: 600 volts
- Diode Type: General Purpose (PN Junction Diodes)
- Features: Other
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Supplier: Richardson RFPD
Description: SINGLE DIODE POWER MODULE. Application: Anti-Parallel Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers, Electric Vehicles. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, Very
- IF: 500,000 mA
- RoHS Compliant: RoHS Compliant
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Supplier: Microchip Technology, Inc.
Description: FRED Si diode Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Low stray inductance Outstanding performance at high frequency operation Low losses Direct mounting to heatsink (isolated package)
- VF: 2.1 volts
- VR: 1,000 volts
- Diode Type: General Purpose (PN Junction Diodes)
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: FRED Si diode Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Low stray inductance Outstanding performance at high frequency operation Low losses Direct mounting to heatsink (isolated package)
- VF: 1.8 volts
- VR: 1,700 volts
- Diode Type: General Purpose (PN Junction Diodes)
- Features: Other
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage Surface
- VF: 0.57 volts
- VR: 25 volts
- IFSM: 350 amps
- Features: Other
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Fast switching Low leakage Low forward voltage drop High Current capability High surge capability High reliability
- VF: 1.3 volts
- IF: 8,000 mA
- IR: 0.01 to 0.15 mA
- trr: 150 ns
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Small size molded package PRV 3,000 to 12,000 volts 1.0 inch min. leads Low leakage
- VF: 26 volts
- IF: 25 mA
- IR: 0.001 to 0.025 mA
- trr: 150 ns
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Supplier: ProTek Devices
Description: Ultra Low Capacitance Steering Diode/TVS Array FEATURES • IEC 61000-4-2 (ESD) • IEC 61000-4-4 (EFT) • IEC 61000-4-5 (Surge) • Low Operating Voltage: 3.3V • Provides Two (2) Lines of Protection • Low Leakage Current < 1.0µA • Ultra Low
- IR: 0.001 mA
- VBR: 0 volts
- CT: 1 pF
- Peak Pulse Power: 150 watts
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Supplier: Electro Optical Components, Inc.
Description: (CH4) Detector uses a TDLAS (Tunable Diode Laser Absorption Spectrometry) laser system. This type of gas analysis module enables a new generation of ultra-high precision gas detection products which are suitable for coal mine, chemical industry and other industries. The principle of
- Measurement Type: Leakage
- Gas Types: Methane (CH4) / Natural Gas
- Number of Gases Monitored: Single Gas
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Supplier: Richardson RFPD
Description: Features High speed IGBT4 Low voltage drop Low leakage current Low switching losses SiC Schottky Diode Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient on VF Very low stray inductance
- Features: Other
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Supplier: Linear Systems
Description: ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A polysilicon gate is featured for manufacturing reliability. For similar products see: quad
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Supplier: Richardson RFPD
Description: V, ultra low flat leakage of less than 14 dBm across the power range can be achieved. The MADL-011088-DIE can limit up to 39 dBm incident CW power at room temperature. It is available in die form with a compact die dimension of 1.78 x 0.98 mm.
- Frequency Band: 6,000 to 12,000 MHz
- Insertion Loss: 0.35 dB
- Features: Other
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Supplier: Agilent Technologies - Vacuum Products
Description: argon and helium. Noble diode elements are used in general-purpose applications where pumping of residual argon and other noble gases is required. Available with StarCell, diode, and noble diode elements to provide the best pumping speed for different gases Available with
- Ultimate Operating Vacuum: 0.0000000000750283824473074 torr
- Pumping Speed: 317.832000493398 CFM
- Application: Analytical / Scientific, Medical / Laboratory, Semiconductor Manufacturing
- Configuration: Individual Vacuum Pump
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Featured Products Top
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Good-Ark Semiconductor’s GSCLAMP0524PE is a quad TVS array designed to protect sensitive high-speed data lines from ESD, cable discharge events, and electrical fast transients. Featuring ultra-low 0.2pF line-to-line capacitance and low leakage current, it maintains high signal integrity in (read more)
Browse Transient Voltage Suppressor Diodes (TVS) Datasheets for New Yorker Electronics Co., Inc. -
diodes and two DC blocking caps designed for use as a passive receiver protector in wireless systems up to 6 GHz. Targeted for cellular infrastructure base station, repeater, and wireless backhaul OEMs, it can also be used in broad market wireless systems including VSAT, S-band radar, military (read more)
Browse PIN Diodes Datasheets for Skyworks Solutions, Inc. -
The M160UFG 16kV high voltage diode is manufactured and 100% tested in the USA. Rated at 16kV, 10mA, the M160UFG is an axial-lead hermetically sealed high (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
The TDK Corporation has expanded its ultra-low clamping voltage TVS diode lineup from EPCOS with three models in the SD0201 series (read more)
Browse Diodes Datasheets for DigiKey -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
The HLM-8011U is a GaAs Schottky diode signal limiter featuring high IP3 and high power handling. It delivers low insertion loss and high return loss from DC through Ka band and features a typical 1dB compression point of +10dBm. The limiter’s low +7 dBm flat leakage makes it ideal for protecting sensitive components and for applications requiring high linearity. (read more)
Browse RF Limiters Datasheets for Marki Microwave LLC -
because of their ultra-low device capacitance (as low as 0.3 pF). For maximum design flexibility these diodes are offered in both dual line DFN1006-3 and single line DFN1006BD-2. With the latter packages having side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 (read more)
Browse Electrostatic Discharge (ESD) Suppressors Datasheets for Nexperia B.V. -
ultra-fast switching, low loss, and high isolation, the MA4AGSW2 helps engineers design high-performance RF systems with reduced footprint and enhanced reliability. (read more)
Browse RF Switches Datasheets for Win Source Electronics
Conduct Research Top
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* Optimizing High-Voltage Common Mode Rejection Performance of the APCL-x6xL Ultra-Low Power Optocouplers
The ACPL-x6xL products are optically coupled ultra-low. power 10 MBd digital CMOS opto couplers that operate. with low power consumption, especially when the light. emitting diode (LED) operates at low current. When. a current is applied to drive the LED, common mode. rejection (CMR) can be aff
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Techniques to Increase High-Voltage Common Mode Rejection (HVCMR)
The ACPL-M61L is an optically coupled ultra-low power. 10 MBd digital CMOS optocouplers that operates with. low power consumption, especially when the light. emitting diode (LED) operates at low current. It is off ered. in a compact SO-5 package. When a low current is used. to drive the LED, common
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Integrated circuit electrometer and sweep circuitry for an atmospheric probe
Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp.
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Circuit requirements for MEMS-based mechanical-to-electrical power conversion
Keywords: Energy scavenging, microwatt level power, vibration, piezoelectric effect, wireless sensors, PVDF, ultra - low leakage diode , high energy conversion efficiency .
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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
ULTRA - LOW LEAKAGE DIODE .
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Ultra-low power flip-flops for MTCMOS circuits
ULTRA - LOW LEAKAGE DIODE .
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Ultra low-power design techniques using special SOI MOS diodes
Ultra - Low Leakage Diode The reverse current of classical MOS diodes (i.e. a MOSFET with drain connected to gate) is equal to the MOS current Is at V,=OV (fig.l), which becomes much higher than the junction leakage current for…
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Design Of A High-Performance Floating Power Mosfet Driving Circuit
In Fig. 1, dl is a Schottky diode, d2 is an ultra fast, low leakage diode , C2 is a high frequency styrophene capacitor, and TF1 and 2 are saturable transformers (saturating after .
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On the design of an energy-harvesting noise-sensing WSN mote
Diode leakage is negligible since an ultra - low - leakage diode was utilized for the design.
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Design of a Passively-Powered, Programmable Sensing Platform for UHF RFID Systems
Also, because this final diode is rectifying a 70KHz signal instead of an RF signal, we were able to use an ultra - low - leakage diode for this component instead of the relatively high leakage Agilent HSMS-2852 RF diode used elsewhere.
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ESD Protection Diodes
ESD Protection Diode , Ultra - Low Leakage , Low Capacitance .
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Data Sheet: Transient Voltage Suppressors (TVS)
ESD Protection Diodes with Ultra − Low Leakage .