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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Low-Power, Diode and Rectifier,
- Features: Rectifier Diode
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Schottky. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Low-Power, Diode and
- Tj: -55 C
- IO: 12 amps
- Features: Other, Rectifier Diode, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, TVS. Search-friendly keywords include TVS diode, ESD protection, surge suppression, transient voltage, Low-Power,
- Configuration: Single
- Features: Transient Voltage Suppressor Diodes (TVS)
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Supplier: Nexperia B.V.
Description: Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package, designed to protect one high-speed data line from the damage caused by ESD and other transients. Features and benefits Unidirectional ESD protection of one line
- Capacitance: 0.6 pF
- VESD: 23,000 volts
- Features: ESD Suppressor, Other
- Standards and Certifications: RoHS Compliant
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Supplier: Broadcom Inc.
Description: The HSMP-4820 / HSMP-482x pin diodes feature low resistance and are optimized for switch applications where ultra-low resistance and low inductance are required.
- IF: 10 mA
- VR: 20 volts
- IR: 0.01 mA
- trr: 7 ns
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Supplier: Broadcom Inc.
Description: The Avago ACPL-M62L (single-channel, SO-5 package) open-drain optocoupler is part of the Avago ultra low power ACPL-x6xL digital optocouplers that combine an AlGaAs light emitting diode and an integrated high gain photo detector addresses the low power need.
- Rise Time: 0.01 to 0.012 µs
- Collector Emitter Breakdown Voltage: 3 to 5 volts
- Operating Temperature: -40 to 105 C
- Input: AC, DC
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Low-Power, Quad, TVS. Search-friendly keywords include TVS diode, ESD protection, surge suppression, transient voltage,
- Configuration: Single
- Features: Transient Voltage Suppressor Diodes (TVS)
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Supplier: Broadcom Inc.
Description: The ACNW261L (single-channel, widebody 400mil DIP-8 package) optocoupler is part of the Avago ultra low power ACPL-x6xL digital optocouplers that combine an AlGaAs light emitting diode (LED) and an integrated high gain photodetector. The optocoupler consumes extremely
- Isolation Voltage: 5,000 volts
- Rise Time: 0.01 to 0.012 µs
- Operating Temperature: -40 to 105 C
- Input: DC
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Supplier: Nexperia B.V.
Description: SMD plastic package Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
- VF: 460 to 0.46 volts
- IF: 2,000 mA
- VR: 10 volts
- IR: 3 mA
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless ultra small
- VF: 440 to 0.44 volts
- IF: 500 mA
- VR: 20 volts
- IR: 1.5 mA
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Supplier: Newport MKS
Description: The LDX-3620B is a battery powered, ultra low noise current source, optimized for narrow linewidth or stable wavelength laser diode applications. The all new instrument provides a precision current output with <100 nA rms noise and <10ppm stability. The current source can be
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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Features: Other, PIN Diodes, Switching
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Supplier: ROHM Semiconductor GmbH
Description: RSX048LAP2S is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- VF: 0.87 volts
- IF: 3,000 mA
- VR: 200 volts
- RoHS Compliant: RoHS Compliant
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Supplier: ROHM Semiconductor GmbH
Description: RSX078BGE2S is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- VF: 0.92 volts
- IF: 5,000 mA
- VR: 200 volts
- RoHS Compliant: RoHS Compliant
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in
- VF: 0.88 volts
- IF: 5,000 mA
- VR: 200 volts
- IR: 0.007 mA
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
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Supplier: Infineon Technologies AG
Description: Diodes ESD230-B1-W0201 | Multi purpose diodes for ESD protection BAS40-05W | Schottky Diodes BGA725L6 | GNSS LNAs ESD202-B1-CSP01005 | Multi purpose diodes for ESD protection ESD234-B1-W0201 | Multi purpose diodes for ESD protection ESD241-B1-W0201 | Multi purpose
- IR: 0.0001 to 0.000001 mA
- Diode Applications: Protector
- RoHS Compliant: RoHS Compliant
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Supplier: Littelfuse, Inc.
Description: Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation
- Polarity: N-Channel
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: BD3522EFV is an ultra low-dropout linear chipset regulator that operates from a very low input supply. It offers ideal performance in low input voltage to low output voltage applications. The input-to-output voltage difference is minimized by using a built-in
- Regulated Output Voltage (Volt): 0.65 to 2.7 volts
- Output Current (IOUT): 4 amps
- Operating Temperature: -10 to 100 C
- Input Voltage (VIN): 4.3 to 5.5 volts
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Supplier: Littelfuse, Inc.
Description: high-frequency power switching application such as switch mode power supply and DC-DC converters. Ultra-fast switching Low reverse leakage current High surge current capability Low forward voltage drop Common Cathode configuration in TO-220AB package
- VF: 2.03 volts
- IF: 30,000 mA
- IFSM: 110 amps
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: Azumo
Description: produces high quality displays that are extremely low power and visible in all environments - sunlight, low-light, & moonlight. Azumo's display module incorporates only a single LED enabling product designers to develop ultra-thin devices and minimize battery use. 272 x
- Viewing Area Width: 74 mm
- Viewing Area Height: 44.6 mm
- Features / Applications: ARINC / Avionics, Automotive Applications, Built-in Controller, Computer Applications, MIL-SPEC / Military
- Display Type: Graphic Display
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Supplier: Azumo
Description: This reflective LCD tablet enables video content in 16.7M color never before seen in a frontlit reflective display. Front lighting a reflective LCD produces high quality displays that are extremely low power and visible in all environments - sunlight, low-light, & moonlight. It
- Viewing Area Width: 226.1 mm
- Viewing Area Height: 141.3 mm
- Features / Applications: ARINC / Avionics, Automotive Applications, Built-in Controller, Computer Applications, MIL-SPEC / Military
- Display Type: Graphic Display
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Supplier: Azumo
Description: low-light, & moonlight. Azumo’s display module incorporates only a single LED enabling product designers to develop ultra-thin devices and minimize battery use. 15 - 100uW display power consumption 1.8 (45.72mm) diagonal size 36.36mm (H) x 27.60mm (V) active area 0.120mm (H)
- Viewing Area Width: 36.36 mm
- Viewing Area Height: 27.599999999999998 mm
- Features / Applications: ARINC / Avionics, Automotive Applications, Built-in Controller, Computer Applications, MIL-SPEC / Military
- Display Type: Graphic Display
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Supplier: Allied Electronics, Inc.
Description: Ultra Fast Silicon Rectifier, 8 A Forward Current, TO-220 Package Type Ultrafast 50ns recovery time Low forward voltage Low leakage current High temperature glass passivated function The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching
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Supplier: Azumo
Description: low-light, & moonlight. Azumo’s display module incorporates only a single LED enabling product designers to develop ultra-thin devices and minimize battery use. 50 - 175uW display power consumption 2.7 (68.58mm) diagonal size 58.80mm (H) x 35.28mm (V) active area 0.147mm (H)
- Viewing Area Width: 58.8 mm
- Viewing Area Height: 35.38 mm
- Features / Applications: ARINC / Avionics, Automotive Applications, Built-in Controller, Computer Applications, MIL-SPEC / Military
- Display Type: Graphic Display
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Supplier: Allied Electronics, Inc.
Description: AND® Optoelectronics has been supplying a broad assortment of high performance light emitting diode (LED) lamps and LED segment displays for over 30 years. Our ultra bright LED lamps are on the high end of the performance spectrum and come in 3 mm, 5 mm and 10 mm for "wire lead lamps".
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Light Emitting Diodes (LED) - LED; Ultra Bright, Emit Amber, Lens Amber, 6 Viewing Angle -- 70079170Supplier: Allied Electronics, Inc.
Description: AND® Optoelectronics has been supplying a broad assortment of high performance light emitting diode (LED) lamps and LED segment displays for over 30 years. Our ultra bright LED lamps are on the high end of the performance spectrum and come in 3 mm, 5 mm and 10 mm for "wire lead lamps".
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Supplier: Richardson RFPD
Description: KILOVOLT™ PIN diode series utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. The PIN chips employed have low resistance, high
- VR: 2,000 volts
- Operating Frequency: 1 to 100 MHz
- CT: 3.2 pF
- Features: Other, RF Diodes
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Supplier: Bacharach, Inc.
Description: Detects all CFC, HFC and HCFC refrigerants as low as 0.006 oz/yr, including R-410a and R-507 Dual power options allow battery operation for the best mobility or wall power for uninterrupted usage Visual and audible indicators include an incremental flashing LED in the probe tip,
- Operating Temperature: 32 to 104 F
- Computer Interface Options: Other
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Supplier: Richardson RFPD
Description: Features Ultra-fast recovery times Soft recovery characteristics Low forward voltage Low leakage current Avalanche energy rated RoHS compliant Benefits High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased
- IF: 39,000 mA
- RoHS Compliant: RoHS Compliant
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Supplier: Allied Electronics, Inc.
Description: AND® Optoelectronics has been supplying a broad assortment of high performance light emitting diode (LED) lamps and LED segment displays for over 30 years. Our ultra bright LED lamps are on the high end of the performance spectrum and come in 3 mm, 5 mm and 10 mm for "wire lead lamps".
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM's fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.
- VF: 1 volts
- IF: 500 mA
- VR: 200 volts
- Tj: -55 to 150 C
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage Surface
- VF: 0.57 volts
- VR: 25 volts
- IFSM: 350 amps
- Features: Other, Schottky Barrier Diodes
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Supplier: Daburn Electronics & Cable
Description: With an efficiency of 88%, our 30 watt triple output DC-DC converter features an ultra wide input voltage, a low profile package of 1.0" x 2.0" x 0.4" and an operating temperature range up to 85°C. This epoxy-encapsulated design is RoHS compliant and meets UL60950-1, EN-60950-1 and
- DC Input Voltage: 24 to 48 volts
- DC Input Current: 0.055 to 1.33 amps
- DC Output Voltage: -15 to 15 volts
- DC Output Current: 0.416 to 5 amps
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A diode is an electronic device with two terminals that conduct current primarily in one direction. They feature a low resistance in one direction (ideally (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
because of their ultra-low device capacitance (as low as 0.3 pF). For maximum design flexibility these diodes are offered in both dual line DFN1006-3 and single line DFN1006BD-2. With the latter packages having side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 (read more)
Browse Electrostatic Discharge (ESD) Suppressors Datasheets for Nexperia B.V. -
1210 Low-ESR quartz crystal for miniature designs Extend battery life with ultra-low-power 32.768 kHz quartz delivering stable timing for space-constrained IoT, wearable and portable devices. (read more)
Browse Crystals Datasheets for Micro Crystal AG -
Daitron offers a 50W version of Superior Ultra Low Noise Power Supply model. You can choose 5V,12V, 15V, 24V, 30V or 48Voutput voltage option. All these voltage output models have superior ultra low ripple noise. This model is the ideal (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd. -
Industry's lowest DCR and ultra low AC losses over a wide frequency range Superior current handling with soft saturation characteristics AEC-Q200 Grade 1 (−40°C to +125°C) Wide inductance range up to 8.2 µH RoHS-compliant, halogen free. 260°C compatible. Tin-silver (96.5/3.5) over copper terminations COTS Plus tin-silver-copper and tin-lead terminations available (read more)
Browse Chip Inductors Datasheets for Coilcraft, Inc. -
with: Ultra-low power consumption using deep sleep and fast wake-up modes for extended battery life. Multi-protocol support (read more)
Browse System on a Chip (SoC) Datasheets for Win Source Electronics -
diodes and two DC blocking caps designed for use as a passive receiver protector in wireless systems up to 6 GHz. Targeted for cellular infrastructure base station, repeater, and wireless backhaul OEMs, it can also be used in broad market wireless systems including VSAT, S-band radar, military (read more)
Browse PIN Diodes Datasheets for Skyworks Solutions, Inc. -
Real-Time Clock (RTC) Modules combine a 32.768 kHz XTAL with a CMOS based oscillator and RTC IC inside a miniature SMD ceramic package. Ultra low power consumption: 45nA High accuracy: ± 1 ppm, ± 0.09s/day Smallest package: 2.0 x 1.2 x 0.7 mm Extended temperature range up to +125°C including AEC-Q200 (read more)
Browse Real-Time PCR Instruments Datasheets for Micro Crystal AG -
The Temperature Sensor Module combines a 12-bit Temperature Sensor with a Real-Time Clock (RTC) IC and an embedded 32.768 kHz XTAL inside a miniature SMD ceramic package. Ultra low power consumption: 160 nA Temperature precision and accuracy: ±1°C (-40°C (read more)
Browse Temperature Sensor Chips Datasheets for Micro Crystal AG -
Daitron offers a 150W version of Ultra Low Noise Power Supply model. You can choose 5V,12V, 15V, 24V, 30V or 48Voutput voltage option. All these voltage output models have ultra low ripple noise This model is the ideal solution for engineers who need extremely low noise for your (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd.
Conduct Research Top
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* Optimizing High-Voltage Common Mode Rejection Performance of the APCL-x6xL Ultra-Low Power Optocouplers
The ACPL-x6xL products are optically coupled ultra-low. power 10 MBd digital CMOS opto couplers that operate. with low power consumption, especially when the light. emitting diode (LED) operates at low current. When. a current is applied to drive the LED, common mode. rejection (CMR) can be aff
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Techniques to Increase High-Voltage Common Mode Rejection (HVCMR)
The ACPL-M61L is an optically coupled ultra-low power. 10 MBd digital CMOS optocouplers that operates with. low power consumption, especially when the light. emitting diode (LED) operates at low current. It is off ered. in a compact SO-5 package. When a low current is used. to drive the LED, common
More Information Top
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Using SOI double-gate MOSFET NDR structures to improve ultra-low power full adder performance
The NDR device (which has also been called Ultra Low Power Diode ) is implemented with one N- and one P-MOSFET, as shown in Figure 1 (a) and (b) for .
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Optimization of the area/robustness/speed trade-off in a 28 nm FDSOI latch based on ULP diodes
The ultra low power diode proposed in [6] is ап architecture that allows to strongly reduce the reverse leakage current while maintaining similar 1'orward current drive capability.
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2007 Index IEEE Journal of Solid-State Circuits Vol. 42
Low Leakage SOI CMOS Static Memory Cell With Ultra - Low Power Diode ; J-SC March 2007 689-702 Lewis, S. H., see Guilar, N. J., J-SC Feb. 2007 400-409 Lewis, S. H., see Perry, R. T., J-SC Oct. 2007 …
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A very high efficiency ultra-low-power 13.56MHz voltage rectifier in 150nm SOI CMOS
Very High Efficiency 13.56MHz RFID Input Stage Voltage Multipliers Based on Ultra Low Power MOS diodes .
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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
We propose a new diode structure (ULPD for Ultra - Low Power diode )6 combining an nMOS and a pMOSFET (Fig. 1a) that strongly reduces reverse current.
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Ultra low-power design techniques using special SOI MOS diodes
… MOSFET with drain connected to gate) is equal to the MOS current Is at V,=OV (fig.l), which becomes much higher than the junction leakage current for low V,. We propose a new Ultra Low - Power diode (i.e. ULPD, combining …
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Ultra-low power flip-flops for MTCMOS circuits
We propose a new diode structure (ULPD for Ultra - Low Power diode ) [4] combining an n and a pMOSFET (Fig.1) that strongly reduces reverse current.
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Low Power RF Circuit Design in Standard CMOS Technology
… S.: Scaling Impact on Analog Performance of Sub-100nm MOS-FETs for Mixed Mode Applications (2003) (Gosset et al. 2008) Gosset, G., et al.: Very High Efficiency 13.56 MHz RFID Input Stage Voltage Multipliers Based On Ultra Low Power MOS Diodes .
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Integrated SRAM compiler with clamping diode to reduce leakage and dynamic power in nano-CMOS process
… VDD scaling for SRAMs to 45 nm and beyond’, IEEE J. Solid-State Circuits, 2008, 43, (11), pp. 2514–2523 [5] Levacq D., Dessard V., Flandre D.: ‘Low leakage SOI CMOS static memory cell with ultra - low power diode ’, IEEE J. Solid …
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Table of contents
Low Leakage SOI CMOS Static Memory Cell With Ultra - Low Power Diode .... D. Levacq, V. Dessard, and D. Flandre .
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