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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Diode Applications: Switching, Other
- Diode Type: PIN Diodes
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Supplier: ROHM Semiconductor GmbH
Description: RSX058LAP2S is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- IF: 3000 mA
- RoHS Compliant: Yes
- VF: 0.9200 volts
- VR: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RSX078BM2S is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- IF: 5000 mA
- RoHS Compliant: Yes
- VF: 0.9200 volts
- VR: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RSX078BGE2S is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- IF: 5000 mA
- RoHS Compliant: Yes
- VF: 0.9200 volts
- VR: 200 volts
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Supplier: ROHM Semiconductor GmbH
Description: RSX088LAP2S is a ultra low IR schottky barrier diode, suitable for Switching power supply.
- IF: 5000 mA
- RoHS Compliant: Yes
- VF: 0.9200 volts
- VR: 200 volts
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless
- Diode Applications: Rectifier Diode, Switching, Protector, Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 500 mA
- IR: 1.5 mA
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode with an integrated guard ring for stress protection encapsulated in a SOD882 leadless ultra small plastic package. Features and benefits Forward current: 0.5 A Reverse voltage: 20 V Ultra low forward voltage Leadless
- Diode Applications: Rectifier Diode, Switching, Protector, Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 500 mA
- IR: 1.50E6 mA
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Supplier: Broadcom Inc.
Description: The HSMP-4820 / HSMP-482x pin diodes feature low resistance and are optimized for switch applications where ultra-low resistance and low inductance are required.
- Diode Applications: Limiter, Switching, Power Diode
- Diode Type: PIN Diodes, RF Diodes
- IF: 10 mA
- IR: 0.0100 mA
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Supplier: Broadcom Inc.
Description: The HSMP-482B / HSMP-482x pin diodes are optimized for switch applications where ultra-low resistance and low inductance are required.
- Diode Applications: Limiter, Switching, Power Diode
- Diode Type: PIN Diodes, RF Diodes
- IF: 10 mA
- IR: 0.0100 mA
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Supplier: Broadcom Inc.
Description: The Avago ACPL-M62L (single-channel, SO-5 package) open-drain optocoupler is part of the Avago ultra low power ACPL-x6xL digital optocouplers that combine an AlGaAs light emitting diode and an integrated high gain photo detector addresses the low power need.
- Collector Emitter Breakdown Voltage: 3 to 5 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 105 C
- Optocoupler Input: AC, DC
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Supplier: Nexperia B.V.
Description: line Ultra low diode capacitance: Cd = 0.6 pF Max. peak pulse power: PPPM up to 200 W Low clamping voltage ESD protection > 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5; (surge) Application information
- Diode Applications: Protector
- RoHS Compliant: Yes
- VR: 12 volts
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Supplier: Nexperia B.V.
Description: line Ultra low diode capacitance: Cd = 0.6 pF Max. peak pulse power: PPPM up to 200 W Low clamping voltage ESD protection > 23 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5; (surge) Application information
- Diode Applications: Protector
- RoHS Compliant: Yes
- VR: 24 volts
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Supplier: Broadcom Inc.
Description: The Avago ACPL-M61L (single-channel, SO-5 package) optocoupler is part of the Avago ultra low power ACPL-x6xL digital optocouplers that combine an AlGaAs light emitting diode and an integrated high gain photo detector addresses the low power need. The
- Collector Emitter Breakdown Voltage: 3 to 5 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 105 C
- Optocoupler Input: AC, DC
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Supplier: Littelfuse, Inc.
Description: high-frequency power switching application such as switch mode power supply and DC-DC converters. Ultra-fast switching Low reverse leakage current High surge current capability Low forward voltage drop Single die in two-leaded, electrically isolated TO- 220AC
- IF: 30000 mA
- IFSM: 200 amps
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- VF: 2.74 volts
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Supplier: Infineon Technologies AG
Description: 1200 V silicon power diode in a D2PAK TO-263 package Ultra-soft 1200 V, 30 A emitter controlled silicon power diode in a D2PAK TO-263 package is qualified with a T j(max) of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.
- Diode Applications: Power Diode
- IF: 30000 to 50000 mA
- IR: 0.1000 mA
- RoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: RB218BM200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- IR: 0.0100 mA
- RoHS Compliant: Yes
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Supplier: Newport MKS
Description: The LDX-3620B is a battery powered, ultra low noise current source, optimized for narrow linewidth or stable wavelength laser diode applications. The all new instrument provides a precision current output with <100 nA rms noise and <10ppm stability. The current source can
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Supplier: ROHM Semiconductor USA, LLC
Description: BD3522EFV is an ultra low-dropout linear chipset regulator that operates from a very low input supply. It offers ideal performance in low input voltage to low output voltage applications. The input-to-output voltage difference is minimized by using a built-in
- IC Package Type: Other
- Operating Temperature: -10 to 100 C
- Output Current (IOUT): 4 amps
- Regulated Output Voltage (Volt): 0.6500 to 2.7 volts
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Supplier: Richardson RFPD
Description: KILOVOLT™ PIN diode series utilize modern semiconductor and packaging technology that assures low loss, low distortion, and reliable performance in multi-kilowatt switch applications at frequencies as low as 1 MHz. The PIN chips employed have low resistance, high
- Diode Type: PIN Diodes, RF Diodes
- VR: 2000 volts
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
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Supplier: Richardson RFPD
Description: Low noise (EMI) switching Higher reliability systems Increased system power density Applications Power factor correction (PFC) Anti-parallel diode: Switch-mode power supply, Inverters/converters , Motor controllers Freewheeling diode: Switch-mode
- IF: 75000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- RoHS Compliant: Yes
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Supplier: Solid State Devices, Inc.
Description: FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER SCHOTTKY series has been designed to provide ultra low forward voltage drops at low operating temperatures of 75°C. Low VF, typically 380mV (per leg) at 75°C Low reverse leakage
- Diode Type: Schottky Barrier Diodes
- VF: 0.5700 volts
- VR: 35 volts
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Supplier: ROHM Semiconductor USA, LLC
Description: RB088NS200 is the 200V ultra-low IR SBD optimized for automotive applications including powertrains and xEVs. It offers ultra-low leakage current (IR) characteristics to achieve high withstand voltage of 200V. Replacing FRDs and rectifier diodes typically used in vehicle
- IF: 5000 mA
- Package Type: Other
- RoHS Compliant: Yes
- VF: 0.8800 volts
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Supplier: Azumo
Description: 64 color MIP LCD display module includes Azumo's front light panel optically bonded to the front of the reflective LCD below the cover glass or touch panel. Used in any lighting condition, from dark spaces to bright direct sunlight, this MIP display enables ultra-low power consumption,
- Applications: Automotive Applications, ARINC / Avionics, Computer Applications, MIL-SPEC / Military
- Backlight: Light Emitting Diode (LED)
- Display Type: Graphic Display
- Features: Built-in Controller
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features For low-loss, fast-recovery, meter protection,bias isolation and clamping application Guard ring protected Low forward voltage Pb-free (RoHS compliant) package Applications
- IF: 200 mA
- Life Cycle Stage: Other
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High
- Package Type: Other
- Polarity: N-Channel
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Supplier: Vincotech GmbH
Description: With SiC PFC Diode Kelvin Emitter for improved switching performance Open Emitter configuration Rectifier + Dual Booster + H-Bridge Temperature sensor Extremly low losses Ultra-fast body diode Improved reverse diode commutation
- Configuration: Power Factor Correction (PFC)
- Output Current: 20 amps
- Output Voltage: 600 volts
- Technology: Other / Specialty Technology
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Supplier: RS Components, Ltd.
Description: diode switches between 18kHz and 40kHz. 1.35V temperature-stable forward voltage. Ideal for Power Factor Correction (PFC) topologies. The Rapid 2 diode switches between 40 kHz and 100 kHz. Low reverse recovery charge: forward voltage ratio for BiC performance. Low
- IF: 30000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: OSRAM Opto Semiconductors
Description: Advanced Power TOPLED, ultra white (0.345, 0.335), very low thermal resistance Product Features Package: white SMT package colorless clear silicone resin Feature of the device: very low thermal resistance high optical power Color: Cx = 0.35, Cy = 0.34 acc
- Color: White
- Viewing Angle: 120 degrees
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Supplier: ProTek Devices
Description: Ultra Low Capacitance TVS Array FEATURES • IEC 61000-4-2 (ESD): Air - 15kV, Contact - 8kV • IEC 61000-4-4 (EFT): 40A - 5/50ns • 125 Watts Peak Power per Line (tp = 8/20µs) • Replacement for MLV (0803) • Low Clamping Voltage
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- IR: 1.00E-3 mA
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Supplier: Daburn Electronics & Cable
Description: With an efficiency of 88%, our 30 watt triple output DC-DC converter features an ultra wide input voltage, a low profile package of 1.0" x 2.0" x 0.4" and an operating temperature range up to 85°C. This epoxy-encapsulated design is RoHS compliant and meets UL60950-1, EN-60950-1 and
- DC Input Current: 0.0550 to 1.33 amps
- DC Input Voltage: 24 to 48 volts
- DC Output Current: -0.4160 to 5 amps
- DC Output Power: 30 watts
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Supplier: RS Components, Ltd.
Description: High efficiency. Ultra-small, low-profile surface-mount packages. Optimized for Low forward voltage drop and high junction temperature. Low capacitance. Negligible power switching losses. Low leakage current Diode Configuration = Single Maximum
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 1500 mA
- VR: 20 volts
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A diode is an electronic device with two terminals that conduct current primarily in one direction. They feature a low resistance in one direction (ideally (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
because of their ultra-low device capacitance (as low as 0.3 pF). For maximum design flexibility these diodes are offered in both dual line DFN1006-3 and single line DFN1006BD-2. With the latter packages having side wettable flanks to enable automated optical inspection (AOI). These AEC-Q101 (read more)
Browse Electrostatic Discharge (ESD) Suppressors Datasheets for Nexperia B.V. -
Daitron offers a 50W version of Superior Ultra Low Noise Power Supply model. You can choose 5V,12V, 15V, 24V, 30V or 48Voutput voltage option. All these voltage output models have superior ultra low ripple noise. This model is the ideal (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd. -
Industry's lowest DCR and ultra low AC losses over a wide frequency range Superior current handling with soft saturation characteristics AEC-Q200 Grade 1 (−40°C to +125°C) Wide inductance range up to 8.2 µH RoHS-compliant, halogen free. 260°C compatible. Tin-silver (96.5/3.5) over copper terminations COTS Plus tin-silver-copper and tin-lead terminations available (read more)
Browse Chip Inductors Datasheets for Coilcraft, Inc. -
with: Ultra-low power consumption using deep sleep and fast wake-up modes for extended battery life. Multi-protocol support (read more)
Browse System on a Chip (SoC) Datasheets for Win Source Electronics -
diodes and two DC blocking caps designed for use as a passive receiver protector in wireless systems up to 6 GHz. Targeted for cellular infrastructure base station, repeater, and wireless backhaul OEMs, it can also be used in broad market wireless systems including VSAT, S-band radar, military (read more)
Browse PIN Diodes Datasheets for Skyworks Solutions, Inc. -
Real-Time Clock (RTC) Modules combine a 32.768 kHz XTAL with a CMOS based oscillator and RTC IC inside a miniature SMD ceramic package. Ultra low power consumption: 45nA High accuracy: ± 1 ppm, ± 0.09s/day Smallest package: 2.0 x 1.2 x 0.7 mm Extended temperature range up to +125°C including AEC-Q200 (read more)
Browse Real-Time PCR Instruments Datasheets for Micro Crystal AG -
The Temperature Sensor Module combines a 12-bit Temperature Sensor with a Real-Time Clock (RTC) IC and an embedded 32.768 kHz XTAL inside a miniature SMD ceramic package. Ultra low power consumption: 160 nA Temperature precision and accuracy: ±1°C (-40°C (read more)
Browse Temperature Sensor Chips Datasheets for Micro Crystal AG -
Daitron offers a 150W version of Ultra Low Noise Power Supply model. You can choose 5V,12V, 15V, 24V, 30V or 48Voutput voltage option. All these voltage output models have ultra low ripple noise This model is the ideal solution for engineers who need extremely low noise for your (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd. -
Daitron offers a 50W version of Ultra Low Noise Power Supply model. You can choose 5V,12V, 15V, 24V, 30V or 48Voutput voltage option. All these voltage output models have ultra low ripple noise This model is the ideal solution for engineers who need (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd.
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* Optimizing High-Voltage Common Mode Rejection Performance of the APCL-x6xL Ultra-Low Power Optocouplers
The ACPL-x6xL products are optically coupled ultra-low. power 10 MBd digital CMOS opto couplers that operate. with low power consumption, especially when the light. emitting diode (LED) operates at low current. When. a current is applied to drive the LED, common mode. rejection (CMR) can be aff
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Techniques to Increase High-Voltage Common Mode Rejection (HVCMR)
The ACPL-M61L is an optically coupled ultra-low power. 10 MBd digital CMOS optocouplers that operates with. low power consumption, especially when the light. emitting diode (LED) operates at low current. It is off ered. in a compact SO-5 package. When a low current is used. to drive the LED, common
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Using SOI double-gate MOSFET NDR structures to improve ultra-low power full adder performance
The NDR device (which has also been called Ultra Low Power Diode ) is implemented with one N- and one P-MOSFET, as shown in Figure 1 (a) and (b) for .
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Optimization of the area/robustness/speed trade-off in a 28 nm FDSOI latch based on ULP diodes
The ultra low power diode proposed in [6] is ап architecture that allows to strongly reduce the reverse leakage current while maintaining similar 1'orward current drive capability.
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2007 Index IEEE Journal of Solid-State Circuits Vol. 42
Low Leakage SOI CMOS Static Memory Cell With Ultra - Low Power Diode ; J-SC March 2007 689-702 Lewis, S. H., see Guilar, N. J., J-SC Feb. 2007 400-409 Lewis, S. H., see Perry, R. T., J-SC Oct. 2007 …
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A very high efficiency ultra-low-power 13.56MHz voltage rectifier in 150nm SOI CMOS
Very High Efficiency 13.56MHz RFID Input Stage Voltage Multipliers Based on Ultra Low Power MOS diodes .
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Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
We propose a new diode structure (ULPD for Ultra - Low Power diode )6 combining an nMOS and a pMOSFET (Fig. 1a) that strongly reduces reverse current.
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Ultra low-power design techniques using special SOI MOS diodes
… MOSFET with drain connected to gate) is equal to the MOS current Is at V,=OV (fig.l), which becomes much higher than the junction leakage current for low V,. We propose a new Ultra Low - Power diode (i.e. ULPD, combining …
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Ultra-low power flip-flops for MTCMOS circuits
We propose a new diode structure (ULPD for Ultra - Low Power diode ) [4] combining an n and a pMOSFET (Fig.1) that strongly reduces reverse current.
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Low Power RF Circuit Design in Standard CMOS Technology
… S.: Scaling Impact on Analog Performance of Sub-100nm MOS-FETs for Mixed Mode Applications (2003) (Gosset et al. 2008) Gosset, G., et al.: Very High Efficiency 13.56 MHz RFID Input Stage Voltage Multipliers Based On Ultra Low Power MOS Diodes .
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Integrated SRAM compiler with clamping diode to reduce leakage and dynamic power in nano-CMOS process
… VDD scaling for SRAMs to 45 nm and beyond’, IEEE J. Solid-State Circuits, 2008, 43, (11), pp. 2514–2523 [5] Levacq D., Dessard V., Flandre D.: ‘Low leakage SOI CMOS static memory cell with ultra - low power diode ’, IEEE J. Solid …
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Table of contents
Low Leakage SOI CMOS Static Memory Cell With Ultra - Low Power Diode .... D. Levacq, V. Dessard, and D. Flandre .