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Supplier: Qorvo
Description: Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output power and 24 dB of large-signal gain while achieving 48% power-added
- Frequency Range: 8,500 to 10,500 MHz
- Minimum Gain: 34.4 dB
- Maximum Gain: 34.4 dB
- Minimum Operating Voltage: 6 volts
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Supplier: Qorvo
Description: Qorvo's TGA2535-SM is an X band packaged power amplifier. The TGA2535-SM operates from 10 to 12 GHz and is designed using Qorvo's power pHEMT production process. The TGA2535-SM typically provides 43 dBm of TOI at 20 dBm Pout/Tone, 33 dBm of output power at
- Frequency Range: 10,000 to 12,000 MHz
- Minimum Gain: 25 dB
- Maximum Gain: 25 dB
- Minimum Operating Voltage: 6 volts
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Supplier: Qorvo
Description: Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5
- Open-Loop Gain (AVOL): 27.9 dB
- Supply Voltage (VS): 24 volts
- Operating Range: Military
- Features: Other, Power Operational Amplifiers
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Supplier: Qorvo
Description: Qorvo's QPA2611 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8 - 12 GHz, the QPA2611 provides > 5 W of saturated output power and 26 dB of large-signal gain while achieving an impressive 42%
- Frequency Range: 8,000 to 12,000 MHz
- Minimum Gain: 26 dB
- Maximum Gain: 26 dB
- Minimum Operating Voltage: 24 volts
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Supplier: Broadcom Inc.
Description: AJAV-6101 is a complete high performance power amplifier for W-CDMA and HSPA wireless communications. This PA is powered by a single connection to the battery and is implemented in a standard CMOS process. Features High performance 3G power amplifier Integrated Tx
- Frequency Range: 1,920 to 1,980 MHz
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
- RoHS Compliant: RoHS Compliant
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Supplier: Broadcom Inc.
Description: The Avago ACPM-9641 is a fully matched 10-pin surface mount power amplifier (PA) module developed for LTE Band 41, Band 38, and xGP. The PA module meets stringent linearity power up to LTE (MPR=0 dBm) 28.4 dBm. The ACPM-9641 features the CoolPAM circuit technology
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
- RoHS Compliant: RoHS Compliant
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Supplier: Xicom Technology, Inc.
Description: The XTS-50X-B1 High Power Solid State Block Upconverters (BUC) are a series of compact fully integrated antenna mount units designed for low cost operation and longevity. The L-Band input interfaces to standard modems operating in the 950 - 1450 MHz range.
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Supplier: Broadcom Inc.
Description: AJAV-6751 is a complete high performance power amplifier for W-CDMA and HSPA wireless communications. This PA is powered by a connection to the battery and is implemented in a standard CMOS process. Features High performance 3G power amplifier Integrated Tx Filtering -
- Frequency Range: 824 to 1,980 MHz
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
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Supplier: Broadcom Inc.
Description: AJAV-6781 is a complete high performance power amplifier for W-CDMA and HSPA wireless communications. This PA is powered by a connection to the battery and is implemented in a standard CMOS process. Features High performance 3G power amplifier Integrated Tx Filtering -
- Frequency Range: 880 to 1,980 MHz
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The SE2580L is a matched 802.11a/b/g/n WLAN RF Power Amplifier module providing all the functionality of the power amplifiers, match, harmonic filters and power detector.
- Frequency Range: 2,400 to 5,875 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Minimum Operating Voltage: 3.3 volts
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched design which
- Frequency Range: 20,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 30 dBm
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Supplier: Richardson RFPD
Description: The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high
- Amplifier Type: Power Amplifier
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Supplier: Skyworks Solutions, Inc.
Description: PAM FOR FOR CDMA / WCDMA / HSDPA / HSUPA / HSPA+ / LTE
- Frequency Range: 1,710 to 1,785 MHz
- Minimum Gain: 27 dB
- Maximum Gain: 27 dB
- Minimum Operating Voltage: 3.2 volts
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Supplier: Richardson RFPD
Description: The MAAP-011340-DIE is a 1/4 W Ka-band amplifier. The amplifier has a 24 dBm typical P1dB and a 25 dBm typical P3dB with 24 dB of gain. The typical OIP3 is 33 dBm. The drain bias supply is 5.5 V. The gate voltage is adjusted to set the drain current to 275 mA. Die size with
- Frequency Range: 27,000 to 31,500 MHz
- Maximum Gain: 24 dB
- Output Power( P1dB): 24 dBm
- Noise Figure: 5.9 dB
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Supplier: Custom MMIC
Description: The CMD278C4 is a broadband MMIC GaN low noise amplifier housed in a leadless 4x4 mm QFN package. The CMD278C4 is ideally suited for microwave radios and X-band applications where small size and high input power survivability are needed. The broadband device delivers 15
- Frequency Range: 8,000 to 12,000 MHz
- Minimum Gain: 15 dB
- Maximum Gain: 15 dB
- Output Power( P1dB): 27.999999999999996 dBm
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Supplier: Utmel Electronic Limited
Description: Wide Band Medium Power Amplifier, 24000MHz Min, 31500MHz Max, 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32
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Supplier: Custom MMIC
Description: The CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5 dB
- Frequency Range: 18 to 40 MHz
- Minimum Gain: 17 dB
- Maximum Gain: 17 dB
- Output Power( P1dB): 7.999999999999998 dBm
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Supplier: Utmel Electronic Limited
Description: AMP, POWER, UMTS, BAND 5, 4X4 SMD
- Features: Other
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Supplier: Wolfspeed
Description: voltage, higher saturated electron drift velocity and higher thermal conductivity. This MMIC power amplifier contains a two-stage reactively matched amplifier design approach, enabling high power and power added efficiency to be achieved in a 7mm x 7mm,
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Supplier: Mini-Circuits
Description: provides +31 dBm output power at saturation and extremely flat gain (39 ±1.3 dB) across its full bandwidth, making it ideal for systems where consistent performance across frequency is required. The amplifier operates on a +15V DC supply and comes housed in compact aluminum alloy case
- Minimum Operating Voltage: 20 volts
- Maximum Operating Voltage: 20 volts
- Operating Temperature: -20 to 65 C
- Nominal Impedance: 50 Ohms
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZHL-25W-63(X)+ is a Class AB, high-power amplifier providing 25 W saturated power over the 700 to 6000 MHz band, ideal for a variety of high-power test setups as well as applications including communications, radar and more. The
- Minimum Operating Voltage: 30 volts
- Maximum Operating Voltage: 30 volts
- Nominal Impedance: 50 Ohms
- Package Type: Connectorized
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RF Amplifiers - Connectorized SMA, High Power Amplifier, 600 MHz to 2500 MHz, 50Ω -- ZHL-0G62G5030X+Supplier: Mini-Circuits
Description: The ZHL-0G62G5030(X)+ is a high power broadband amplifier providing more than 30W of output power with a typical small signal gain of 51dB over the 600 to 2500 MHz frequency band. The amplifier uses state-of-the-art semiconductor technology and can be used
- Frequency Range: 600 to 2,500 MHz
- Minimum Gain: 45 dB
- Maximum Gain: 55 dB
- Output Power( P1dB): 43 to 45 dBm
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Supplier: Mini-Circuits
Description: The ZHL-10M2G0020(X)+ is a high-power broadband amplifier providing more than 20W of output power with a typical small signal gain of 52 dB over the 10 to 2000 MHz frequency band. The amplifier uses state-of-the-art semiconductor technology and can be used
- Frequency Range: 10 to 2,000 MHz
- Minimum Gain: 45 dB
- Maximum Gain: 55 dB
- Output Power( P1dB): 40 dBm
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Supplier: Wolfspeed
Description: OQPSK offset Class A/B high-gain, high-efficiency, 50-ohm MMIC Ku Band high-power amplifier
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The AWB7125 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low
- Frequency Range: 860 to 894 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The AWB7138 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low
- Frequency Range: 791 to 821 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Custom MMIC
Description: The CMD292 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 30 GHz. The amplifier delivers 13 dB of gain with a corresponding output 1 dB compression point of +27 dBm and output IP3 of 33 dBm at 15 GHz. The CMD292 is a 50 ohm matched design which
- Frequency Range: 30,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 13 dB
- Output Power( P1dB): 26.999999999999996 dBm
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Narrow Band Low Power Amplifier, 1 Func, 4.50 X 2.20 MM, 1 MM HEIGHT, HALOGEN FREE AND LEAD FREE, MCOB, 12 PIN Product overview: ALM-1712-TR1G from Broadcom is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and
- Supply Voltage (VS): 2.7 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: Utmel Electronic Limited
Description: Wide Band Low Power Amplifier, 400MHz Min, 6000MHz Max, 1.40 MM X 1.26 MM, 0.31MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, TSLP-7-8, 7 PIN
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Supplier: Visual Sound, Inc.
Description: Tape/CD/Line In and legendary Peavey reliability. 2x200 watts at 4 ohms DDT™ protected power FLX® (Feedback Locating System) Digital effects including Reverb, Delay, Vocal Exciter Two 9-band graphic EQs (one assignable to monitor or channel 1) Input signal present peak indicators 7
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1MHz. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current sense, 1MHz, Operational Amplifier IC, OP Amps, Buffer
- Slew Rate (SR): 1 V/µs
- Bandwidth: 1 MHz
- Operating Temperature: -40 C
- Features: Operational Amplifiers
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5MHz, SOT-23. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current sense, 5MHz, SOT-23,
- Bandwidth: 5 MHz
- Features: Operational Amplifiers, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1MHz, SOT-23. Search-friendly keywords include op amp, operational amplifier, buffer amplifier, current sense, 1MHz, SOT-23, Operational Amplifier IC,
- Slew Rate (SR): 1 V/µs
- Bandwidth: 1 MHz
- Operating Temperature: -40 C
- Features: Operational Amplifiers, Other
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Supplier: TRENDnet Inc.
Description: 1750 Mbps total wireless: 1300 Mbps AC + 450 Mbps N bands High speed USB 3.0 share port Pre-encrypted for your convenience Create an isolated guest network One touch network connection with the WPS button All Gigabit wired ports High power amplifiers extend wireless coverage
- Network Equipment: Router
- Network Media: Wireless
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Supplier: Acme Chip Technology Co., Limited
Description: AMPLIFIER - PULSED POWER, X-BAND
Find Suppliers by Category Top
Featured Products Top
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Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
High output power: 18 W High PAE: 40% Linear gain: 26 dB DC bias: Vd=30 V @ IDQ=680 mA MSL 3 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
. Flexco’s FCL02 is the X-Band showstopper. It offers super low-loss, amplitude stable, and high-power handling through X-Band for excellent systems performance. This series can be phase matched and armored for added durability. This is the cable series used on the SBX-1 and is the perfect radar systems cable. Contact the Flexco sales team to see which Series fits your specifications and let us quote your configuration. (read more)
Browse Cable Assemblies Datasheets for Flexco Microwave, Inc. -
dielectric technology offers excellent combination of small footprint, high rejection, low loss and moderate power handling Diverse applications include radar, communications, sensors, IF filters, test and measurement MTB (read more)
Browse RF Filters and Microwave Filters Datasheets for Richardson RFPD -
, and in-rush current protection to protect from damage in case of unexpected spikes in voltage during operation. The high frequency operation combined with high gain and high output power makes this amplifier an ideal choice for automotive, radar/sensing applications, and wireless backhaul testing in E-Band frequency ranges. (read more)
Browse RF Amplifiers Datasheets for Mini-Circuits
Conduct Research Top
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EPT: Reconfigurable Dual-Band GaN Power Amplifier MMICs Advances Radar Architecture
QORVO QPA0007 and QPA0004 electronically reconfigurable dual-band (S- and X-band) GaN power amplifiers (PAs) support a shift in radar architecture for defense, weather and commercial avionics. The patented devices are commercially available and can be rapidly reconfigured for operation between S
More Information Top
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High efficiency 80W X-band power amplifier using coaxial waveguide spatial power combining technique
A high efficiency X band power amplifier is presented using the combining structure and 16 MMIC amplifiers.
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THE
Abstract—The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report.
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Radar Handbook, Third Edition > Chapter 11 Solid-State Transmitters
Examples of an Lband two-stage low-noise amplifier GaAs MMIC and an X band power amplifier GaAs MMIC are shown in Figure 11.18 and Figure.
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Nitride Semiconductors: Handbook on Materials and Devices Complete Document
Power-combining single-stage X band power amplifiers have been reported using four 1-mm gate periphery devices mentioned above [30].
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R/D activities on MMICs in Europe
9 the HBT technology presented in the last three European Community programmes pushed the section for X band power amplifiers can also be used for research.
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Electrothermal models of transistors based on finite element analysis for radar applications
The complete model has been successfully implemented in the Advanced Design Simulator (ADS) for two kind of X band power amplifiers of 8W class.
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Electro-thermal model extraction for MMIC power amplifiers
The technique suggested in this paper, which is described in sections II through V, was tested on a commercial GaAs FET MMIC X band power amplifier .
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GaAs X-band high efficiency (>65%) Broadband (>30%) amplifier MMIC based on the Class B to Class J continuum
X band power amplifiers with >;30% bandwidth are required for a wide range of emerging applications where achieving optimal electrical efficiency is a key system driver.
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Reducing spectral growth of phase coded radar pulses
The arbitrary waveform generator was implemented using off the self devices and it was used as a first stage of an up converter channel, were the second up converting stage drives a saturated X Band power amplifier .
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Two Octave Phemt Power Amplifier for EW Applications
Thus a X band power amplifier has been also developped and exhibits quite good performance with 39 dBm output power, 17 dB associated gain and 4000 PAE (power added efficiency). II.