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Supplier: Qorvo
Description: The QPA0004 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band. In S-Band, it provides 9W saturated power over the 3.1 to 3.5GHz frequency range. In X-Band, it provides 8W saturated power from 9 to
- Device Type: Power Operational Amplifiers
- Operating Range: Military
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Supplier: Qorvo
Description: The QPA0007 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band. In S-Band, it provides 32 W saturated power over the 3.1 to 3.5 GHz frequency range. In X-Band, it provides 28 W saturated power from 9
- Device Type: Power Operational Amplifiers
- Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 %
- Device Type: Power Operational Amplifiers
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Broadcom Inc.
Description: AJAV-6101 is a complete high performance power amplifier for W-CDMA and HSPA wireless communications. This PA is powered by a single connection to the battery and is implemented in a standard CMOS process. Features High performance 3G power amplifier
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 1920 to 1980 MHz
- Package Type: Surface Mount Technology (SMT)
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Supplier: Qorvo
Description: Qorvo's TGA2535-SM is an X band packaged power amplifier. The TGA2535-SM operates from 10 to 12 GHz and is designed using Qorvo's power pHEMT production process. The TGA2535-SM typically provides 43 dBm of TOI at 20 dBm Pout/Tone, 33 dBm of output power at
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems
- Frequency Range: 10000 to 12000 MHz
- Maximum Gain: 25 dB
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Supplier: Xicom Technology, Inc.
Description: The XTS-50X-B1 High Power Solid State Block Upconverters (BUC) are a series of compact fully integrated antenna mount units designed for low cost operation and longevity. The L-Band input interfaces to standard modems operating in the 950 - 1450 MHz range.
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Supplier: Broadcom Inc.
Description: Integrated Tx Filtering - Delivers best noise in the industry Integrated coupler Compatible with the APT application Single direct connection to the battery 3 mode power control with Vmode0 and Vmode1 Low average current High capacity CMOS process Small 3x4.2 mm package Applications
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 824 to 1980 MHz
- Nominal Impedance: 50 Ohms
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Supplier: Broadcom Inc.
Description: Integrated Tx Filtering - Delivers best noise in the industry Integrated coupler Compatible with the APT application 3 mode power control with Vmode0 and Vmode1 Low average current High capacity CMOS process Small 3x4.2 mm package Applications Band 1 and 8 UMTS applications
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 880 to 1980 MHz
- Nominal Impedance: 50 Ohms
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Supplier: Broadcom Inc.
Description: Integrated Tx Filtering - Delivers best noise in the industry Integrated coupler Compatible with the APT application 3 mode power control with Vmode0 and Vmode1 Low average current High capacity CMOS process Small 3x4.2 mm package Applications Band 1 and 8 UMTS applications
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Supplier: Xicom Technology, Inc.
Description: The XTS-100X high power solid state power amplifier is a compact, fully integrated antenna-mount unit designed for low cost operation and longevity.
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Supplier: Xicom Technology, Inc.
Description: The XTRS-100X is a highly efficient rack-mountable solid state power amplifier (SSPA) designed for fixed and mobile uplink applications.
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Supplier: Custom MMIC
Description: The CMD249is a wideband GaAs MMIC power amplifier die which operates from DC to 20 GHz. The amplifier delivers greater than 12 dB of gain with a corresponding output 1 dB compression point of +29 dBm and output IP3 of 38 dBm at 10 GHz. The CMD249 is a 50 ohm matched design which
- Amplifier Type: Power Amplifier
- Frequency Range: 20000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13 dB
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Supplier: Richardson RFPD
Description: bands. The compact 3.0 mm x 3.5 mm x 0.67 mm module consists of a quad-band power amplifier die, a silicon CMOS controller, 50 Ohm input and output matching circuitry. The silicon CMOS controller supports fully programmable through the RF Front-End Mobile
- Amplifier Type: Power Amplifier
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Supplier: Custom MMIC
Description: The CMD278C4 is a broadband MMIC GaN low noise amplifier housed in a leadless 4x4 mm QFN package. The CMD278C4 is ideally suited for microwave radios and X-band applications where small size and high input power survivability are needed. The broadband device delivers 15
- Amplifier Type: Low Noise Amplifier
- Applications: Terrestrial RF/Microwave Systems, Other
- Frequency Range: 8000 to 12000 MHz
- MMIC Technology Required: Yes
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Supplier: Skyworks Solutions, Inc.
Description: PAM FOR FOR CDMA / WCDMA / HSDPA / HSUPA / HSPA+ / LTE
- Amplifier Type: Power Amplifier
- Frequency Range: 1710 to 1785 MHz
- Maximum Gain: 27 dB
- Maximum Operating Voltage: 4.2 volts
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Supplier: Skyworks Solutions, Inc.
Description: Please note: this product is being discontinued and is not recommended for new designs. The SE2580L is a matched 802.11a/b/g/n WLAN RF Power Amplifier module providing all the functionality of the power amplifiers, match, harmonic filters and power detector.
- Amplifier Type: Power Amplifier
- Frequency Range: 2400 to 5875 MHz
- Maximum Gain: 30 dB
- Maximum Operating Voltage: 3.3 volts
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Supplier: Utmel Electronic Limited
Description: AMP, POWER, UMTS, BAND 5, 4X4 SMD
- Package Type: Other
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Supplier: Richardson RFPD
Description: The SKY66293-21 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 3400 to 3800 MHz. The active biasing circuitry is
- Amplifier Type: Power Amplifier
- Frequency Range: 3400 to 3800 MHz
- Maximum Gain: 35 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: SKY66295-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 800 to 900 MHz. The active biasing circuitry is integrated to
- Amplifier Type: Power Amplifier
- Frequency Range: 800 to 900 MHz
- Maximum Gain: 34 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Custom MMIC
Description: The CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure of 3.5 dB
- Amplifier Type: Low Noise Amplifier
- Applications: Other
- Frequency Range: 18 to 40 MHz
- MMIC Technology Required: Yes
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Supplier: Xicom Technology, Inc.
Description: The XTD-550X and XTD-750X are compact self-contained, antenna mountable power amplifiers designed for low cost installation and long life. The design eliminates the need for an amplifier shelter as well as a long waveguide run between the amplifier and the
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Supplier: Richardson RFPD
Description: The SKY66318-21 is a highly efficient, wide instantaneous bandwidth, fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for 5G NR and 4G LTE systems operating from 3300 to 3700 MHz. Active biasing circuitry is
- Amplifier Type: Power Amplifier
- Frequency Range: 3300 to 3700 MHz
- Maximum Operating Voltage: 5 volts
- Minimum Operating Voltage: 5 volts
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Supplier: Empower RF Systems
Description: Module type: CW/FM/AM, size: 3.2"x2.5"x0.7"
- Amplifier Type: Power Amplifier
- Frequency Range: 3600 to 3700 MHz
- Maximum Gain: 32 dB
- Maximum Operating Voltage: 13 volts
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Supplier: Utmel Electronic Limited
Description: Wide Band Medium Power Amplifier, 24000MHz Min, 31500MHz Max, 5 X 5 MM, ROHS COMPLIANT, LEADLESS, PLASTIC, SMT, QFN-32
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Supplier: DigiKey
Description: X/KU BAND SPATIUM
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 8000 to 11000 MHz
- Maximum Gain: 26.6 dB
- Maximum Operating Voltage: 28 volts
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Supplier: Wolfspeed
Description: silicon, gallium arsenide or GaN-on-Si, including higher breakdown voltage, higher saturated-electron-d rift velocity and higher thermal conductivity. This Ku Band MMIC is available in a 10-lead, 25-mm x 9.9-mm, metal/ceramic flanged package for optimal electrical and thermal
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Supplier: Visual Sound, Inc.
Description: , six 1/4 inch inputs, one Tape/CD/Line In and legendary Peavey reliability. 2x200 watts at 4 ohms DDT? protected power FLX® (Feedback Locating System) Digital effects including Reverb, Delay, Vocal Exciter Two 9-band graphic EQs (one assignable to
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Supplier: TMP Pro Distribution
Description: Careful Parts Selection and Design Focused on Sound Quality The XP-series power amplifiers deliver sound quality that's on a par with top-class models thanks to painstaking circuit design and components specifically selected to deliver the highest sound quality possible. These amps
- Type: Amplifier
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Supplier: Acme Chip Technology Co., Limited
Description: AMPLIFIER - PULSED POWER, X-BAND
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Supplier: ValueTronics International, Inc.
Description: 62 Hz, approx. 15VA Dimensions: 215(W) X 88(H) X 350(D) mm Weight: Approx. 3.2kg The NF Corporation 5325 is an isolation amplifier with features of high with-standing voltage, low noise and wide frequency band. This instrument is suitable for detecting signal which is
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Supplier: TRENDnet Inc.
Description: 1750 Mbps total wireless: 1300 Mbps AC + 450 Mbps N bands High speed USB 3.0 share port Pre-encrypted for your convenience Create an isolated guest network One touch network connection with the WPS button All Gigabit wired ports High power amplifiers extend wireless coverage
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Supplier: Infineon Technologies AG
Description: The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 50 to 10000 MHz
- Noise Figure: 0.4000 dB
- Nominal Operating Current: 0.0021 to 0.0250 amps
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Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
High-Power, Wide-Band Performance Designed for demanding laboratory and industrial environments, the VSA-D Series delivers up to 1000 kVA output with a (read more)
Browse Shock and Vibration Testing Shakers Datasheets for ECON Technologies Co.,Ltd -
High output power: 18 W High PAE: 40% Linear gain: 26 dB DC bias: Vd=30 V @ IDQ=680 mA MSL 3 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
. Flexco’s FCL02 is the X-Band showstopper. It offers super low-loss, amplitude stable, and high-power handling through X-Band for excellent systems performance. This series can be phase matched and armored for added durability. This is the cable series used on the SBX-1 and is the perfect radar systems cable. Contact the Flexco sales team to see which Series fits your specifications and let us quote your configuration. (read more)
Browse Cable Assemblies Datasheets for Flexco Microwave, Inc. -
dielectric technology offers excellent combination of small footprint, high rejection, low loss and moderate power handling Diverse applications include radar, communications, sensors, IF filters, test and measurement MTB (read more)
Browse RF Filters and Microwave Filters Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics
Conduct Research Top
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EPT: Reconfigurable Dual-Band GaN Power Amplifier MMICs Advances Radar Architecture
QORVO QPA0007 and QPA0004 electronically reconfigurable dual-band (S- and X-band) GaN power amplifiers (PAs) support a shift in radar architecture for defense, weather and commercial avionics. The patented devices are commercially available and can be rapidly reconfigured for operation between S
More Information Top
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High efficiency 80W X-band power amplifier using coaxial waveguide spatial power combining technique
A high efficiency X band power amplifier is presented using the combining structure and 16 MMIC amplifiers.
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THE
Abstract—The design of Class A and Class AB 2-stage X band Power Amplifier is described in this report.
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Radar Handbook, Third Edition > Chapter 11 Solid-State Transmitters
Examples of an Lband two-stage low-noise amplifier GaAs MMIC and an X band power amplifier GaAs MMIC are shown in Figure 11.18 and Figure.
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Nitride Semiconductors: Handbook on Materials and Devices Complete Document
Power-combining single-stage X band power amplifiers have been reported using four 1-mm gate periphery devices mentioned above [30].
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R/D activities on MMICs in Europe
9 the HBT technology presented in the last three European Community programmes pushed the section for X band power amplifiers can also be used for research.
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Electrothermal models of transistors based on finite element analysis for radar applications
The complete model has been successfully implemented in the Advanced Design Simulator (ADS) for two kind of X band power amplifiers of 8W class.
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Electro-thermal model extraction for MMIC power amplifiers
The technique suggested in this paper, which is described in sections II through V, was tested on a commercial GaAs FET MMIC X band power amplifier .
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GaAs X-band high efficiency (>65%) Broadband (>30%) amplifier MMIC based on the Class B to Class J continuum
X band power amplifiers with >;30% bandwidth are required for a wide range of emerging applications where achieving optimal electrical efficiency is a key system driver.
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Reducing spectral growth of phase coded radar pulses
The arbitrary waveform generator was implemented using off the self devices and it was used as a first stage of an up converter channel, were the second up converting stage drives a saturated X Band power amplifier .
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Two Octave Phemt Power Amplifier for EW Applications
Thus a X band power amplifier has been also developped and exhibits quite good performance with 39 dBm output power, 17 dB associated gain and 4000 PAE (power added efficiency). II.