TABLE OF CONTENTS Several devices from the static induction family such as: static induction transistor (SIT), static induction diode (SID), static induction thyristor, lateral punch-through transistor (LPTT), static induction transistor logic (SITL), static induction MOS transistor (SIMOS), and space charge limiting load (SCLL) are described. The theory of operation of static induction devices is given for both a current controlled by a potential barrier and a current controlled by space charge. The new concept of a punch-through emitter (PTE), which operates with majority carrier transport, is presented.
Static induction devices were invented in 1975 by J. Nishizawa [1] and for many years Japan was the only country where static induction family devices were successfully fabricated. Static induction transistor can be considered as a short channel junction field effect transistor (JFET) device operating in pre-punch-through region. The number of devices in this family is growing with time. The SIT can operate with the power over 100 kW at 100 kHz; above 150 W at 3 GHz. [2]. These devices may operate upto THz frequencies [3, 4]. Static induction transistor logic had 100 times smaller switching energy than its I 2 L competitor [5, 6]. Static induction thyristor has many advantages over the traditional silicon controlled rectifier (SCR), and SID exhibits high switching speed, large reverse voltage, and low forward voltage drops [7].
The cross section of the SIT is...
