TABLE OF CONTENTS (Edited by T. Abe)
K. Terashima
April 1998
This Datareview presents some recent data on the density (Section B), surface tension (Section C) and viscosity (Section D) of silicon melts, and compares values to those in the literature. Anomalies in each of these fundamental properties are observed near the melting point.
Melt density measurements were carried out under 1 atm Ar by using an improved Archimedean technique, which can eliminate the surface tension term during measurements [1]. The crucibles used were SiC coated carbon and SiO 2. The buoyancy on the probe was measured by an electronic balance fixed on a movable Z-stage. Density measurement of doped Si melt with 0.1 atom % of either boron or gallium was carried out. The Si melt for density and surface tension measurement was kept either in a SiC coated graphite crucible or in a SiO 2 glass crucible, both of which had dimensions of 50 mm inner diameter and 80 mm height. The wall thickness was 5 mm. High purity polysilicon (200 g) was contained in a crucible and heated in a two zone furnace. The depth of the melt was 46 mm. The top of the melt was kept about 10 C higher than the base to prevent convection. Temperature was monitored by the signal from a B-type thermocouple (Pt94%Rh6%/Pt70%Rh30%) at the base of the crucible. The signal was calibrated periodically, very often at the end of a...
