TABLE OF CONTENTS (Edited by S.H. Jones)
M. Pawlik, D. Schechter and K.H. Nicholas
[ Datareviews from 'Properties of Silicon' (INSPEC, IEE, London, UK, 1988) are combined here for the reader's convenience and presented in improved format. ]
The relationship between resistivity and dopant density has been systematically measured in boron and phosphorus doped silicon [Al]. Bulk silicon slices were used having dopant densities in the range 3 10 13 to 1 10 20 cm -3 for n-type and 1 10 14 to 1 10 20 cm -3 for p-type. The techniques of capacitance voltage (C-V) for densities less than 1 10 18 cm -3 and Hall effect for densities greater than 1 10 18 cm -3 were used in conjunction with four point probe measurements of resistivity. Additional data points from other published sources have been added to extend the range of validity. Estimates of the self consistency of the conversion between resistivity and dopant concentration and vice versa are given and vary over the range 1 10 12 to 1 10 21 cm -3 for boron and 1 10 12 to 5 10 20 cm -3 for phosphorus, being at worst 4.5%.
It is emphasised that there is conversion between dopant...
