Properties of Crystalline Silicon

Chapter 12: Optical Properties

(Edited by D.E. Aspnes)

12.1 Optical Properties of c-Si: General Aspects

D.E. Aspnes
March 1998

A INTRODUCTION AND SUMMARY

This work is an update of my 1988 EMIS assessment of values of the complex dielectric function ? = ? 1 + i ? 2 and refractive index = n + ik of crystalline (c-) Si [1]. Because these data are expected to be used primarily for optical modelling, such as the determination of thicknesses of oxide overlayers from ellipsometric spectra, I emphasize the spectral range 0.5 to 7.5 eV, discussing recent developments, measurement procedures, and selection criteria, and in Datareview 12.2 providing for modelling purposes a summary of preferred values from 0.0 to 7.5 eV in steps of 0.02 eV. To provide a more complete picture below 1.2 eV and information above 7.5 eV, in Datareview 12.3 I reproduce the listings of [1] in these ranges. A general discussion of the data in Datareview 12.3 is given in [1].

Since 1988 new data have indicated that improvements are needed in the earlier listing below 7.5 eV. In the quartz-optics range the spectroscopic ellipsometry (SE) results of Herzinger et al [2] replace the pseudodielectric function < ? > = < ? 1 > + i < ? 2> spectra of Aspnes and Studna [3] taken with SE on nominally H-terminated (111) Si surfaces. From 6.0 to 6.5 eV the results of [2] replace the results of Philipp [4], obtained by a Kramers-Kronig (K-K) analysis of...

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