G.DI FRANCIA, I.REA, P.MADDALENA [*] , S.LETTIERI [*]
CR-ENEA Loc. Granatello, 80055 Portici, Italy
e-mail: difrancia@portici.enea.it ; fax: 00390817723344
We have investigated on the response of two porous silicon samples, n-type and p-type doped, to oxygen. Both the samples exhibit a quenching following the Stern-Volmer model. Time resolved PL measurements have been also carried out in order to measure the carrier lifetime in absence of the quencher. The reactivity rate constant has been computed and it has been found to depend, for n-doped sample, on the characteristic nano-dimension of the emitting structure. This suggest that chemical reactivity is strictly correlated to the confinement size.
In the sensor field, several interesting phenomena related to nanometric systems, have been reported. For instance, J. Kong and co-workers have reported on a marked variation of the electrical resistance in single-walled carbon nanotubes (SWNT) exposed to NO 2 and NH 3 respectively, a material that has been also shown to exhibit an extreme...
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