350 Solved Electrical Engineering Problems: For the FE/PE Exams in Electrical Engineering

The common source FET circuit shown in Figure 2.10 has the following parameters. Forward transadmittance, y fs, equals 1.5 10 ?3 siemens. Output conductance, y os, equals 10 10 ?6 siemens. Gate-to-source resistance, r gs, equals 1 10 8 ohms. Gate-to-drain resistance, r gd, equals 1 10 8 ohms. Calculate the (a) Z in, (b) Z out, and (c) A v respectively.
Solution:
r d = 1/y os = 1 10 5 ohms
g m = y fs = 1.5 10 ?3
? = y fsr d = g mr d = 1.5 10 ?3 1 10 5 = 150
Z in = R G r gs = (1 10 6) (1 10 8) = 9.9 10 5 ohms
Z out = R D rd = R D 1/y os = (1 10 4) (1 10 5) = 9,090 ohms
A v = ??[R D /(r d + R D)] = ?(g mr d)[R D/(r d + R D)]
