TABLE OF CONTENTS Rasheed M. A. Azzam
Department of Electrical Engineering
College of Engineering
University of New Orleans
New Orleans, Louisiana
| A | instrument matrix |
| | ?/2S 1 |
| E | electrical field |
| E 0 | constant complex vector |
| f ( ) | function |
| I | interface scattering matrix |
| k | extinction coefficient |
| L | layer scattering matrix |
| N | complex refractive index = n ? jk |
| n | real part of the refractive index |
| R | reflection coefficient |
| r | reflection coefficient |
| S ij | scattering matrix elements |
| s, p | subscripts for polarization components |
| X | exp ( ? j2 ?d/ |
| ? | ellipsometric angle |
| | dielectric function |
| | psuedo dielectric function |
| ? | ? i / ? r |
| | angle of incidence |
| ? i | E is /E ip |
| ? r | E rs /E rp |
| ? | ellipsometric angle |
Ellipsometry is a nonperturbing optical technique that uses the change in the state of polarization of light upon reflection for the in-situ and real-time characterization of surfaces, interfaces, and thin films. In this chapter we provide a brief account of this subject with an emphasis on modeling and instrumentation. For extensive coverage, including applications, the reader is referred to several monographs,1 3 user s guides,4 5 collected reprints,6 conference proceedings,7 12 and general and topical reviews .13 32
In ellipsometry, a collimated beam of monochromatic or quasi-monochromatic light, which is polarized in a known state, is incident on a sample surface under examination, and the state of polarization of the reflected light is analyzed. From the incident and reflected...
