Power Distribution Networks with On-Chip Decoupling Capacitors

Index

A

Activation energy of diffusion, 73
Antiresonance, 136-140, 367-368
Atomic diffusivity, 72
Atomic flux
divergence, 74

B

Ball grid array, 89
Bamboo grain structure, see Grain structure
BGA, see Ball grid array
Black's formula, 82
Blech effect, see Electromigration
Break frequency, 381

C

Capacitance
p- n junction, 147
fringe, 128
gate, 150
lateral flux, 128
N-well, 149
parallel plate, 127, 128
trench, 150
Clock jitter, 17-19
cycle-to-cycle, 18
peak-to-peak, 19
Condensors, 127
Critical current density
for hillock formation, 77
for void formation, 77

D

DC DC voltage converters, 311, 312
Decoupling
hierarchical, 101-107
advantages, 105-107
board, 101-102
on-chip, 105
package, 102-104
single-tier, 95-101, 142
limitations, 99-101
Decoupling capacitors, 94, 125, 435
bulk, 362
ceramic, 362
effective series inductance (ESL), 130, 408
effective series resistance (ESR), 130, 408
historical retrospective, 126
hydraulic model, 129, 130
on-chip, see On-chip decoupling capacitance
physical structure, 132
practical model, 129, 131
Delay uncertainty, 17
Design objectives evolution, 7-9
Diffusion paths, 74
Distributed on-chip decoupling capacitors, 435, 439
circuit model, 441
design flow, 452
design methodology, 440-445, 450-453
physical model, 441
tradeoffs, 445-450

E

Electrical size, 53
Electromagnetic interference, 126
Electromigration, 71-86
atomic flux, 73
direction, 72
Blech effect, 78
damage
hillock formation, see Hillock formation
repair, see self-healing
void formation, see Void formation
in advanced interconnect technologies, 83-85
interface diffusion, 84
via void formation, 84
lifetime
accelerated testing, 81
Black's formula, see Black's formula
distribution, 81-82
enhancement in "bamboo" structures, see Grain structure

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