TABLE OF CONTENTS The data and plots shown in this Appendix are extracted from a number of sources. A list of useful sources is given below.
S.Adachi, J. Appl Phys. , 58, R1 (1985).
H.C.Casey, Jr. and M.B.Panish, Heterostructure Lasers , Part A, Fundamental Principles; Part B, Materials and Operating Characteristics, Academic Press, New York (1978).
Landolt-Bornstein, Numerical Data and Functional Relationship in Science and Technology , Vol. 22, Eds. O.Madelung, M.Schulz, and H.Weiss, Springer Verlag, New York (1987).
S.M.Sze, Physics of Semiconductor Devices , J.Wiley, New York (1981). This is an excellent source of a variety of useful information on semiconductors.
| Material | Electron Mass ( m 0) | Hole Mass ( m 0) |
|---|---|---|
| AlAs | 0.1 | |
| AlSb | 0.12 | m dos=0.98 |
| GaN | 0.19 | m dos=0.60 |
| GaP | 0.82 | m dos=0.60 |
| GaAs | 0.067 | m lh=0.082 m hh=0.45 |
| GaSb | 0.042 | m dos=0.40 |
| Ge | m l=1.64 m t=0.082 | m lh=0.044 m hh=0.28 |
| InP | 0.073 | m dos=0.64 |
| InAs | 0.027 | m dos=0.4 |
| InSb | 0.13 | m dos=0.4 |
| Si | m l=0.98 m t=0.19 | m lh=0.16 m hh=0.49 |
| Compound | Direct Energy Gap E g(eV) |
|---|
