Smart Electronic Materials: Fundamentals and Applications

| MATERIAL | CRYSTAL STRUCTURE | BANDGAP (eV) | STATIC DIELECTRIC CONSTANT | LATTICE CONSTANT ( ) | DENSITY (gm-cm ?3) |
|---|---|---|---|---|---|
| C | DI | 5.50, I | 5.570 | 3.5668 | 3.5153 |
| Si | DI | 1.1242, I | 11.9 | 5.431 | 2.3290 |
| SiC | ZB | 2.416, I | 9.72 | 4.3596 | 3.166 |
| Ge | DI | 0.664, 1 | 16.2 | 5.658 | 5.323 |
| AlN | W | 6.2, D | ?=9.14 | a=3.111 c=4.981 | 3.255 |
| AlP | ZB | 2.45, I | 9.8 | 5.4635 | 2.401 |
| AlAs | ZB | 2.153, I | 10.06 | 5.660 | 3.760 |
| GaN | W | 3.44, D | ? =10.4 ? ?=9.5 | a=3.175 c=5.158 | 6.095 |
| GaP | ZB | 2.272, I | 11.11 | 5.4505 | 4.138 |
| GaAs | ZB | 1.424, D | 13.18 | 5.653 | 5.318 |
| GaSb | ZB | 0.75, D | 15.69 | 6.0959 | 5.6137 |
| InN | W | 1.89, D |
| a=3.5446 c=8.7034 | 6.81 |
| InP | ZB | 1344, D | 12.56 | 5.8687 | 4.81 |
| InAs | ZB | 0.354, D | 15.15 | 6.058 | 5.667 |
| InSb | ZB | 0.230, D | 16.8 | 6.479 | 5.775 |
| ZnS | ZB | 3.68, D | 8.9 | 5.4102 | 4.079 |
| ZnS | W | 3.9107, D | ?=9.6 | a=3.8226 c=6.6205 | 4.084 |
| ZnSe | ZB | 2.822, D | 9.1 | 5.668 | 5.266 |
| ZnTe | ZB | 2394, D | 8.7 | 6.104 | 5.636 |
| CdS | W | 2.501, D | ?=9.38 | a=4.1362 c=6.714 | 4.82 |
| CdS | ZB | 2.50, D |
| 5.818 |
|
| CdSe | W | 1.751, D | ? =10.16 ? ?=9.29 | a=4.2999 c=7.0109 | 5.81 |
| CdTe | ZB | 1.475, D | 10.2 | 6.482 | 5.87 |
| PbS | R | 0.41, D [*] | 169. | 5.936 | 7.597 |
| PbSe | R | 0.278, D [*] | 210. | 6.117 | 8.26 |
| PbTe | R | 0.310, D [*] | 414. | 6.462 | 8.219 |
| Data given are room temperature values (300 K). KEY: DI: diamond; R: rocksalt; W: wurtzite; ZB: zinc-blende | |||||
| [*] |