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  • MICRO: Wet Surface tech
    potential enabling processes for next-generation devices. This article discusses a single-wafer wet-etch technology for selective etching There are two conventional ways to etch Si films. Wet etching is accomplished by immersing wafers in a mixture of H O heated to 150 -180 C. Water in solution
  • MICRO: Wet Surface Technologies
    of such processing for foundries and pilot lines, for example, include increased product mix flexibility and faster time to first silicon. To date, few facilities have adopted single-wafer tools for wet cleaning and etch steps, primarily owing to their lack of a demonstrated advantage over batch-processing systems
  • Automation comes to wet-processing stations
    highperformance servo and stepper control, as well as room for up to 50 I/O. It has a built-in 10/100 Base T Ethernet port to query via a secure XML interface. Flexible processors helped Amerimade Technology Inc. automate wet-processing stations for etching, cleaning, stripping, and plating
  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    in the compound semiconductor industry. It is. believed that electrochemical etching, which has been studied. extensively by researchers, is responsible for the phenomenon. Solutions usually focus around the chemistries in the various. wet processing steps. In our recent experiments, we have found
    on a vibration-isolated floor. The cleanroom features eight bays individually dedicated to a specific process function. In addition to an Eaton NV-1002 high-energy ion implanter, the facility's equipment list features tools for optical lithography, wet etching, plasma dry etching, thermal processing, ECR chemical
  • Evaluating the performance of dual PTFE filter assemblies in hot-acid etch baths
    Recirculating hot-acid baths are widely used in the semiconductor industry for wet-etching, stripping, and cleaning silicon wafers. To meet the stringent cleanliness requirements of the industry, particulate contamination generated during processing is removed from the baths by recirculating
  • Fabrication of GaAs Devices
    Fabrication of GaAs Devices. Focusing on all aspects of GaAs processing that deal with GaAs free surfaces and interfaces between GaAs and metal contacts or dielectrics, this detailed text offers pragmatic advice on cleaning and passivation, wet and dry etching and photolithography.
  • MICRO: Surface Conditioning/Chemistries - Song (January 2001)
    in photoresist removal after dry etching or ion implantation. Most photoresist removal procedures consist of a combination of plasma-induced dry ashing and wet chemical treatments. Problems associated with the dry ashing process include incomplete resist removal and undesired by-products caused

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