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  • MICRO: Wet Surface tech
    potential enabling processes for next-generation devices. This article discusses a single-wafer wet-etch technology for selective etching There are two conventional ways to etch Si films. Wet etching is accomplished by immersing wafers in a mixture of H O heated to 150 -180 C. Water in solution
  • MICRO: Wet Surface Technologies
    of such processing for foundries and pilot lines, for example, include increased product mix flexibility and faster time to first silicon. To date, few facilities have adopted single-wafer tools for wet cleaning and etch steps, primarily owing to their lack of a demonstrated advantage over batch-processing systems
  • Automation comes to wet-processing stations
    highperformance servo and stepper control, as well as room for up to 50 I/O. It has a built-in 10/100 Base T Ethernet port to query via a secure XML interface. Flexible processors helped Amerimade Technology Inc. automate wet-processing stations for etching, cleaning, stripping, and plating
  • Effects of Ohmic Metal on Electrochemical Etching of GaAs in pHEMT Manufacturing
    in the compound semiconductor industry. It is. believed that electrochemical etching, which has been studied. extensively by researchers, is responsible for the phenomenon. Solutions usually focus around the chemistries in the various. wet processing steps. In our recent experiments, we have found
  • INDUSTRY NEWS
    on a vibration-isolated floor. The cleanroom features eight bays individually dedicated to a specific process function. In addition to an Eaton NV-1002 high-energy ion implanter, the facility's equipment list features tools for optical lithography, wet etching, plasma dry etching, thermal processing, ECR chemical
  • Evaluating the performance of dual PTFE filter assemblies in hot-acid etch baths
    Recirculating hot-acid baths are widely used in the semiconductor industry for wet-etching, stripping, and cleaning silicon wafers. To meet the stringent cleanliness requirements of the industry, particulate contamination generated during processing is removed from the baths by recirculating
  • Development of a Trench isolated 50V technology on an SOI substrate
    of a phosphorus doped oxide,. followed by a diffusion step where the phosphorous penetrates into the silicon. As seen in Fig. 2, long phosphorous. deposition steps result in higher silicon defect. Next to destructive selective wet etching, drain quiescent current. frames (IDDQ) can also be used
  • PLASMA ETCH INDUCED SURFACE DAMAGE AND ITS IMPACTS ON GaAs SCHOTTKY DIODES
    Dry etch plays a very important role in fabrication of modern IIIV. compound semiconductor devices. Compared to wet chemical. etch, dry etch, which uses reactive gas plasma to remove. substances chemically, has many advantages, such as better. controllability, higher pattern reproducibility