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Supplier: Win Source Electronics
Description: Manufacturer: NXP Win Source Part Number: 201145-BFG10W/X Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.9GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: 4-SO Maximum
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports
- PD: 300 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 250MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 250MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer
- PD: 400 milliwatts
- TJ: 175 C
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.0 W. Search-friendly keywords include transistor, BJT, switching, amplification, 1.0 W, Bipolar Transistor, Single Bipolar
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 10A, 80V, 50W. Search-friendly keywords include transistor, BJT, switching, amplification, 10A, 80V, 50W, Bipolar Transistor, Single Bipolar Transistors. This listing supports
- Features: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1163514-CSD13201W10 Manufacturer Homepage: www.ti.com Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1163545-CSD23202W10 Manufacturer Homepage: www.ti.com Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1163549-CSD25213W10 Manufacturer Homepage: www.ti.com Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors RF PWR N-Ch MOS 150W 14dB 175MHz
- Features: MOSFET
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Supplier: ODG (Origin Data Global)
Description: RF TRANS NPN 10V 1.9GHZ 4SO
- IC(max): 250 milliamps
- VCEO: 10 volts
- Operating Frequency: 1,900 MHz
- Output Power: 0.4 watts
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-10
- IC(max): 1,000 milliamps
- VCEO: 20 volts
- VCBO: 25 volts
- Features: Bipolar RF Transistors, Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 30
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Supplier: DigiKey
Description: RF Transistor NPN 10V 250mA 1.9GHz 400mW Surface Mount 4-SO
- Polarity: NPN
- Features: Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP56-10
- IC(max): 1,000 milliamps
- VCEO: 80 volts
- VCBO: 100 volts
- fT: 100 MHz
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 200 MHz
- hfe: 30
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Supplier: Newark, An Avnet Company
Description: TRANS, NPN, 60V, 2A, 150DEG C, 10W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:80MHz; Power Dissipation Pd:10W; DC Collector Current:2A; DC Current Gain hFE:1000hFE; Transistor Case RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANS, PNP, -120V, -3A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:250MHz; Power Dissipation Pd:10W; DC Collector Current:-3A; DC Current Gain hFE:120hFE; Transistor CaseRoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANS, PNP, 30V, 3A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:3A; Power Dissipation:10W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:80MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANS, PNP, -80V, -5A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:200MHz; Power Dissipation Pd:10W; DC Collector Current:-5A; DC Current Gain hFE:120hFE; Transistor Case RoHS Compliant: Yes
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 25V 225mW 60@4mA,10V 50mA NPN SOT-23 Bipolar Transistors - BJT ROHS
- IC(max): 50 milliamps
- VCEO: 25 volts
- fT: 650 MHz
- PD: 225 milliwatts
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Supplier: ODG (Origin Data Global)
Description: 800V 9A 540mΩ@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET 2170MHZ 10W
- Output Power: 10 watts
- Power Gain: 14.5 dB
- Features: MOSFET, MOSFET RF Transistors, Other
- Packing Method: Tape Reel
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT PRMD10/SOT1268 DFN1412-6
- Features: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Radar Power Transistors
- Power Gain: 8 dB
- Output Power: 10 watts
- Operating Frequency: 3,100 to 3,400 MHz
- Features: Other, Power BJT Transistors
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Description: IGBT MOD 1200V 17A 65W MINIPACK2
- Output Power: 65 watts
- Features: IGBT, Other
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Supplier: Acme Chip Technology Co., Limited
Description: PB-F POWER MOSFET TRANSISTOR DPA
- V(BR)DSS: 500 volts
- IDSS: 9,699.999999999998 milliamps
- Features: MOSFET, Other
- Package Type: TO-251 / TO-252
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Supplier: Acme Chip Technology Co., Limited
Description: RF TRANS NPN 10V 1.9GHZ 4SO
- VCEO: 10 volts
- Output Power: 0.4 watts
- Features: General Purpose BJT, Other
- Packing Method: Tape Reel
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Description: RF MOSFET 50V M174
- Features: MOSFET, Other
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR; PNP; 80VDC; 100VDC; 7.0VDC;3.0 ADC COLLECTOR; 1.0 ADC IB; 10C/W
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Supplier: Allied Electronics, Inc.
Description: TRANSISTOR, POWER; NPN; TO-220AB; 60; 5; 10 ADC COLLECTOR; 2 W @ 25C
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Supplier: Allied Electronics, Inc.
Description: Transistor; NPN; 60; 100; 80; 30 Collector; 15 IB; 150W; 10 mAdc, PBF
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Supplier: Integra Technologies, Inc.
Description: The high power transistor part number ILD1214M10 is designed for L-Band radar operating at 1200-1400 . This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15 watt of peak pulse power. All devices are 100% screened for large signal parameters.
- Power Gain: 13.2 dB
- Operating Frequency: 1,200 to 1,400 MHz
- Output Power: 10 watts
- Features: Bipolar RF Transistors, Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625mW Through Hole TO-92-3
- Polarity: NPN
- Features: Other
- Package Type: TO-92
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- IC(max): 50 milliamps
- VCEO: 15 volts
- fT: 600 MHz
- PD: 225 milliwatts
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Supplier: New Yorker Electronics Co., Inc.
Description: Transistor, NPN, 80V, 1.00A, SOT-223
- VCEO: 80 volts
- IC(max): 1,000 milliamps
- Features: General Purpose BJT, Other
- Polarity: NPN
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