10W Transistor

Description: Manufacturer: NXP Win Source Part Number: 201145-BFG10W/X Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.9GHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: 4-SO Maximum

• Polarity: NPN
• Features: Other
• Package Type: SOT3

Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports

• P_D: 300 milliwatts
• Features: Bipolar RF Transistors, Other
• Polarity: NPN

Description: lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 250MA. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 250MA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer

• P_D: 400 milliwatts
• T_J: 175 C
• Features: Bipolar RF Transistors, Other
• Polarity: NPN

Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.0 W. Search-friendly keywords include transistor, BJT, switching, amplification, 1.0 W, Bipolar Transistor, Single Bipolar

• Features: Bipolar RF Transistors

Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 10A, 80V, 50W. Search-friendly keywords include transistor, BJT, switching, amplification, 10A, 80V, 50W, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• Features: Bipolar RF Transistors

Description: Manufacturer: Texas Instruments Win Source Part Number: 1163545-CSD23202W10 Manufacturer Homepage: www.ti.com Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Manufacturer: Texas Instruments Win Source Part Number: 1163514-CSD13201W10 Manufacturer Homepage: www.ti.com Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: Manufacturer: Texas Instruments Win Source Part Number: 1163549-CSD25213W10 Manufacturer Homepage: www.ti.com Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

• Features: MOSFET, Power MOSFET
• Package Type: SOT3

Description: RF MOSFET Transistors RF PWR N-Ch MOS 175W 15dB 175MHz

• Features: MOSFET

Description: RF TRANS NPN 10V 1.9GHZ 4SO

• I_C(max): 250 milliamps
• V_CEO: 10 volts
• Operating Frequency: 1,900 MHz
• Output Power: 0.4 watts

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCX69-10

• I_C(max): 1,000 milliamps
• V_CEO: 20 volts
• V_CBO: 25 volts
• Features: Bipolar RF Transistors, Other

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 130 MHz
• h_fe: 30

Description: RF Transistor NPN 10V 250mA 1.9GHz 400mW Surface Mount 4-SO

• Polarity: NPN
• Features: Other

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 200 MHz
• h_fe: 30

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BCP56-10

• I_C(max): 1,000 milliamps
• V_CEO: 80 volts
• V_CBO: 100 volts
• f_T: 100 MHz

Description: TRANS, NPN, 60V, 2A, 150DEG C, 10W; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:80MHz; Power Dissipation Pd:10W; DC Collector Current:2A; DC Current Gain hFE:1000hFE; Transistor Case RoHS Compliant: Yes

Description: TRANS, PNP, 30V, 3A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage Max:30V; Continuous Collector Current:3A; Power Dissipation:10W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:80MHz RoHS Compliant: Yes

Description: TRANS, PNP, -120V, -3A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-120V; Transition Frequency ft:250MHz; Power Dissipation Pd:10W; DC Collector Current:-3A; DC Current Gain hFE:120hFE; Transistor CaseRoHS Compliant: Yes

Description: TRANS, PNP, -80V, -5A, 150DEG C, 10W; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:200MHz; Power Dissipation Pd:10W; DC Collector Current:-5A; DC Current Gain hFE:120hFE; Transistor Case RoHS Compliant: Yes

Description: 25V 225mW 60@4mA,10V 50mA NPN SOT-23 Bipolar Transistors - BJT ROHS

• I_C(max): 50 milliamps
• V_CEO: 25 volts
• f_T: 650 MHz
• P_D: 225 milliwatts

Description: 800V 9A 540mΩ@10V 4.5V 1 N-Channel TO-220F MOSFETs ROHS

Description: Transistors RF MOSFET 2170MHZ 10W

• Output Power: 10 watts
• Power Gain: 14.5 dB
• Features: MOSFET, MOSFET RF Transistors, Other
• Packing Method: Tape Reel

Description: Bipolar Transistors - BJT PRMD10/SOT1268 DFN1412-6

• Features: Bipolar RF Transistors

Description: Radar Power Transistors

• Power Gain: 8 dB
• Output Power: 10 watts
• Operating Frequency: 3,100 to 3,400 MHz
• Features: Other, Power BJT Transistors

Description: IGBT MOD 1200V 17A 65W MINIPACK2

• Output Power: 65 watts
• Features: IGBT, Other

Description: PB-F POWER MOSFET TRANSISTOR DPA

• V_(BR)DSS: 500 volts
• I_DSS: 9,699.999999999998 milliamps
• Features: MOSFET, Other
• Package Type: TO-251 / TO-252

Description: RF TRANS NPN 10V 1.9GHZ 4SO

• V_CEO: 10 volts
• Output Power: 0.4 watts
• Features: General Purpose BJT, Other
• Packing Method: Tape Reel

Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT

• Features: General Purpose BJT

Description: Transistor; NPN; 60; 100; 80; 30 Collector; 15 IB; 150W; 10 mAdc, PBF

Description: TRANSISTOR, POWER; NPN; TO-220AB; 60; 5; 10 ADC COLLECTOR; 2 W @ 25C

Description: TRANSISTOR; PNP; 80VDC; 100VDC; 7.0VDC;3.0 ADC COLLECTOR; 1.0 ADC IB; 10C/W

Description: The high power transistor part number ILD1214M10 is designed for L-Band radar operating at 1200-1400 . This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15 watt of peak pulse power. All devices are 100% screened for large signal parameters.

• Power Gain: 13.2 dB
• Operating Frequency: 1,200 to 1,400 MHz
• Output Power: 10 watts
• Features: Bipolar RF Transistors, Other

Description: Bipolar (BJT) Transistor NPN 40V 100mA 125MHz 625mW Through Hole TO-92-3

• Polarity: NPN
• Features: Other
• Package Type: TO-92

Description: MOSFET P-CH 12V 2.2A 4DSBGA

• V_(BR)DSS: 12 volts
• I_DSS: 2,200 milliamps
• Packing Method: Bulk Pack, Tape Reel
• Features: MOSFET, Other

Description: Small signal bipolar junction transistor

• I_C(max): 50 milliamps
• V_CEO: 15 volts
• f_T: 600 MHz
• P_D: 225 milliwatts