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Supplier: Win Source Electronics
Description: Win Source Part Number: 950116-1GB_128X8_8_IC Series: * Categories: Memory - Modules
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Supplier: Win Source Electronics
Description: Win Source Part Number: 950628-2GB_128x8_16C Series: * Categories: Memory - Modules
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Supplier: Quarktwin Technology Ltd.
Description: EEPROM Memory IC 128Kbit I²C 100 kHz 3.5 µs 8-TSSOP
- Density: 128 kbits
- Access Time: 3,500 ns
- Operating Temperature: 0 to 70 C
- Memory Category: EEPROM
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Supplier: ODG (Origin Data Global)
Description: 128Kbit 1000kHz I2C SOP-8 EEPROM ROHS
- Memory Category: EEPROM
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Supplier: Lingto Electronic Limited
Description: IC EEPROM 128KBIT I2C 8TSSOP
- Density: 128 kbits
- Access Time: 3,500 ns
- Memory Category: EEPROM
- Features: I2C, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 128GB. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 128GB, Memory IC and Storage Component, SSDs, HDDs. This listing
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Supplier: Acme Chip Technology Co., Limited
Description: IC EEPROM 128KBIT I2C 8TSSOP
- Density: 128 kbits
- Data Rate: 0.1 MHz
- Cycle Time: 6,000,000 ns
- Memory Category: EEPROM
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Supplier: Newark, An Avnet Company
Description: FRAM, 128KBIT, SPI, SOP-8; Memory Type:FRAM; Memory Size:128Kbit; NVRAM Memory Configuration:16K x 8bit; IC Interface Type:SPI; Access Time:-; Memory Case Style:SOP; No. of Pins:8Pins; Supply Voltage Min:2.7V; Supply Voltage RoHS Compliant: Yes
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Supplier: Win Source Electronics
Description: Win Source Part Number: 950115-654424\2GB\128Mx8\16\chips Series: * Categories: Memory - Modules
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Supplier: Win Source Electronics
Description: Win Source Part Number: 950634-644735\2GB\128Mx8\16\chips Series: * Categories: Memory - Modules
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Supplier: Newark, An Avnet Company
Description: IC, MEMORY, FLASH, 128MBIT, 1.8V, 8WSON; Flash Memory Type:Serial NOR; Memory Size:128Mbit; Flash Memory Configuration:16M x 8bit; IC Interface Type:SPI; Memory Case Style:WSON; No. of Pins:8Pins; Clock Frequency:80MHz; Access RoHS Compliant: Yes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 128GB, 6Gb. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 128GB, 6Gb, Memory IC and Storage Component, SSDs, HDDs. This
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Supplier: Newark, An Avnet Company
Description: MEMORY, FLASH NOR, 128MBIT, SPI, WSON-8; Flash Memory Type:Serial NOR; Memory Size:128Mbit; Flash Memory Configuration:16M x 8bit; IC Interface Type:SPI; Memory Case Style:WSON; No. of Pins:8Pins; Clock Frequency:133MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: FLASH MEMORY, 128MBIT, 108MHZ, WSON-8; Flash Memory Type:Serial NOR; Memory Size:128Mbit; Flash Memory Configuration:16M x 8bit; IC Interface Type:SPI; Memory Case Style:WSON; No. of Pins:8Pins; Clock Frequency:108MHz; Access Time:- RoHS Compliant: Yes
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Supplier: DigiKey
Description: EEPROM Memory IC 128Kb (16K x 8) SPI 10MHz 8-TSSOP
- Operating Temperature: -40 to 125 C
- Memory Category: EEPROM
- Features: Other
- Package Type: TSSOP
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1GB. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1GB, Memory IC and Storage Component, Memory - Modules. This
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Supplier: TT Semiconductor, Inc.
Description: TT Memories is a division of Twilight Technology formed to support the memory marketplace from legacy technologies to state-of-the-art technologies. TT Memories manufactures devices and modules for the Commercial, Industrial, Aerospace, and Defense marketplaces. TT Memories also designs and
- Density: 4,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 5 V
- Memory Category: Flash
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Description: IC EEPROM 128KBIT SPI 8TSSOP
- Density: 128 kbits
- Data Rate: 10 MHz
- Cycle Time: 5,000,000 ns
- Memory Category: EEPROM
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Supplier: Micross Components, Inc.
Description: Memory Products Offered: MRAM SRAM nvSRAM VRAM SDRAM UVEPROM DRAM EEPROM FRAM Flash
- Density: 1,024 kbits
- Access Time: 15 ns
- Operating Temperature: -55 to 125 C
- Supply Voltage: 5 V
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Supplier: Utmel Electronic Limited
Description: MICRON PC28F128P33BF60AFlash Memory, NOR, 128 Mbit, 16M x 8bit, 52 MHz, Parallel, BGA, 64 Pins
- Density: 1,024,000 kbits
- Operating Current: 28 mA
- Standby Current: 2 mA
- Access Time: 60 ns
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Supplier: Utmel Electronic Limited
Description: Flash Memory 128Mb, 1.8V, 80Mhz MirrorBit SPI Flash
- Density: 1,024,000 kbits
- Operating Temperature: -40 to 85 C
- Pin Count: 8
- Memory Category: Flash
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Supplier: Utmel Electronic Limited
Description: IC 32768X36 FIFO MEMORY 128LQFP
- Density: 8,800 kbits
- Operating Current: 40 mA
- Access Time: 4.5 ns
- Cycle Time: 6 ns
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL128SAGBHEA03
- Density: 128,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Rochester Electronics
Description: EEPROM, 16KX8, Serial, CMOS, PDSO8
- Logic Family: CMOS 4000
- Memory Category: EEPROM
- Features: Other
- Package Type: SOP, SSOP, TSSOP
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL128SAGBAEA03
- Density: 128,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL128SAGBHEA00
- Density: 128,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Infineon Technologies AG
Description: Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL128SAGBAEA00
- Density: 128,000 kbits
- Operating Temperature: -55 to 125 C
- Supply Voltage: 2.7 V, 3 V, 3.6 V
- Features: Other
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Supplier: Allied Electronics, Inc.
Description: 1024K, 128K X 8 , 1.8V SER EE IND
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Supplier: Allied Electronics, Inc.
Description: 1024K, 128K X 8, 2.5V HI-SPD SER EE, 128 BYTE PAGE
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Supplier: Integrated Device Technology
Description: The 7009 is a high-speed 128K x 8 Dual-Port Static RAM designed to be used as a stand-alone 1M-bit Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 16-bit-or-more word systems. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to
- Density: 1,024 kbits
- Number of Words: 128 k
- Access Time: 15 ns
- Operating Temperature: 0 to 70 C
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 128Mbit WSON-8-EP(6x8) NOR FLASH ROHS
- Density: 128,000 kbits
- Memory Category: Flash
- Features: NOR
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: Other
- Memory Category: SRAM
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Supplier: Allied Electronics, Inc.
Description: 93AA46A, 93LC46A or 93C46A devices are available, while the 93AA46B, 93LC46B and 93C46B devices provide dedicated 16-bit communication. Advanced CMOS technology makes these devices ideal for low power, nonvolatile memory applications. The entire 93XX Series is available in standard packages
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Supplier: Utmel Electronic Limited
Description: MICRON M45PE10-VMN6PFlash Memory, 1 Mbit, 128K x 8bit, 75 MHz, Serial, SPI, SOIC, 8 Pins
- Density: 8,000 kbits
- Operating Current: 12 mA
- Standby Current: 0.01 mA
- Access Time: 8 ns
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Supplier: ROHM Semiconductor USA, LLC
Description: ROHM recommends BR24G128F-3 for new design.
- Density: 128 kbits
- Number of Words: 16 k
- Bits per Word: 8 bits
- Operating Current: 2.5 mA
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