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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR158W
- Package Type: SOT323, Other
- Polarity: PNP, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR135W
- Package Type: SOT323, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: OPTEK TECHNOLOGY Semiconductors OPB841W55Z
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT
- Transistor Type: Bipolar RF Transistors
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Supplier: Radwell International
Description: OMRON Semiconductors EE-SX4009-P1
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Supplier: Radwell International
Description: FUJI ELECTRIC Semiconductors 1M15060
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Isolated AC/DC Converter
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Transistor 200mW
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN High Power
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-323-3 Bipolar Transistors - BJT ROHS
- Package Type: SOT323
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: SOT-323 Bipolar Transistors - BJT ROHS
- Package Type: SOT323
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
- Package Type: SOT323, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W
- Package Type: SOT323, Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 200mW 100@10mA,1V 200mA SOT-323-3 Bipolar Transistors - BJT ROHS
- Package Type: SOT323
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: Transistors RF MOSFET 2170MHZ 10W
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RF POWER TRANSISTORS
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: POWER BIPOLAR TRANSISTOR
- Transistor Type: Bipolar RF Transistors
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Supplier: Utmel Electronic Limited
Description: RF Bipolar Transistors RF BIP TRANSISTOR
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 50V 150mW 120@1mA,6V 150mA 2PCSPNP SC-70-6(SOT-363) Bipolar Transistors - BJT ROHS
- Polarity: PNP
- Transistor Type: Bipolar RF Transistors
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Supplier: Acme Chip Technology Co., Limited
Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- Package Type: SOT323
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors
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Supplier: Northrop Grumman Corporation
Description: is configured for common base operation and is tested at 800 ns pulse width with 1% duty cycle. WPTB32A1214A 1215-1400 MHz Bipolar RF Transistor The WPTB32A1214A is a high-power NPN transistor designed for pulsed radar applications. The 3217 L-Band die utilized in this device is
- Transistor Grade / Operating Range: Military
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Description: TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 794028-SD2942W Packaging: Tube Package: M244 Current Rating: 40A Frequency: 175MHz Current - Test: 500mA Gain: 17dB Transistor Type: N-Channel Voltage - Test: 50V Power - Output: 350W Family Name
- Package Type: SOT3
- Polarity: N-Channel
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: ROHM Semiconductor USA, LLC
Description: Transistor
- Package Type: Other
- Polarity: P-Channel
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: Small Signal Field-Effect Transistor
- Package Type: Other
- Transistor Type: MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: The high power pulsed transistor part number IB3000S200 is designed to operate in class C mode. This common base device supplies a minimum of 200 watts of peak pulse power under the conditions of 12ìs pulse width and 1% duty cycle. All devices are 100% screened for large signal RF
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: MACOM
Description: At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: MOSFET RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 850952-BC640 Features: Bipolar (BJT) Transistor 80 V 1 A 1 W Package: Bulk Part Status: Obsolete Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 92 pct.
- Package Type: SOT3
- Transistor Type: Bipolar RF Transistors
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 55V 3A 25W Through Hole TO-220-3
- Package Type: TO-220, Other
- Polarity: NPN
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Supplier: Nexperia B.V.
Description: NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Rochester Electronics
Description: Small Signal Bipolar Transistor, 0.1A, 65V, NPN
- Package Type: SOT323, Other
- Packing Method: Tape Reel, Other
- Polarity: NPN
- Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
SMA?f (50Ω) N?type, SMA?K, customized connectors Matches standard microwave device interfaces, easy integration Average Power 200W@1G,100W@8G,30W@18G (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
Browse Transistors Datasheets for Win Source Electronics -
PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
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Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
Browse Transistors Datasheets for Win Source Electronics