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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar
- PD: 100 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: PNP
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 1W. Search-friendly keywords include transistor, BJT, switching, amplification, 25V, 1W, Bipolar Transistor, JFETs. This listing supports clearer product discovery for
- PD: 1,000 milliwatts
- TJ: -55 C
- Features: Bipolar RF Transistors, N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 1A, 1W. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 1A, 1W, Bipolar Transistor, Single Bipolar
- IC(max): 1,000 milliamps
- VCEO: 40 volts
- VCBO: 50 volts
- fT: 50 MHz
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1W, Bipolar Transistor, Bipolar
- PD: 100 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR133W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 30
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR141W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 130 MHz
- hfe: 50
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Supplier: Infineon Technologies AG
Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR183W
- VCEO: 50 volts
- VCBO: 50 volts
- fT: 200 MHz
- hfe: 30
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT Isolated AC/DC Converter
- Features: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: SOP-6-6.8mm Transistor, Photovoltaic Output Optoisolators ROHS
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Supplier: Allied Electronics, Inc.
Description: Darlington Array, 1 W (Max.) Power Dissipation Eight darlingtons with common emitters Output current to 500 mA Output voltage to 50 V Integral suppression diodes Output can be paralleled, inputs pinned opposite outputs to simplify board layout.
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, BIPOLAR, NPN, 20V, 1A, SC-89-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:20V; Continuous Collector Current:1A; Power Dissipation:255mW; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: BIPOLAR TRANSISTOR; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency ft:50MHz; Power Dissipation Pd:225mW; DC Collector Current:50mA; DC Current Gain hFE:50hFE; Transistor Case Style:SOT-23; No. RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, NPN, 160V, 1.5A, 15W, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage Max:160V; Continuous Collector Current:1.5A; Power Dissipation:15W; Transistor Mounting:Surface Mount; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: TRANSISTOR, PNP, 160V, 1.5A, 15W, TO-251; Transistor Polarity:PNP; Collector Emitter Voltage Max:160V; Continuous Collector Current:1.5A; Power Dissipation:15W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN 1W
- VCEO: 50 volts
- IC(max): 3,000 milliamps
- PD: 1,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Win Source Electronics
Description: Manufacturer: Panjit Win Source Part Number: 885317-MMBT3904W_R1_00001 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 40 V 200 mA - 150 mW Surface Mount SOT-323 Package: Reel - TR Package: SC-70, SOT-323 Mounting: Surface Mount Categories: Discrete
- TJ: -55 to 150 C
- Polarity: NPN
- Features: Other
- Package Type: SOT3, SOT323
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Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 015088-DVR1V8W-7 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN + Zener Diode (Isolated) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating:
- Polarity: NPN
- Features: Other
- Package Type: SOT3
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 40V 200mW 100@10mA,1V 200mA SOT-323-3 Bipolar Transistors - BJT ROHS
- IC(max): 200 milliamps
- VCEO: 40 volts
- fT: 300 MHz
- PD: 200 milliwatts
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Description: Integrated Circuits (ICs) - Transistors - Pre-ordered transistors
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Description: Integrated Circuits (ICs) - Transistors - Bipolar Transistors - BJT
- TJ: -55 to 150 C
- Features: General Purpose BJT
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor Array 2 NPN (Dual) Common Emitter 30V 3A 270MHz 1.25W Surface Mount TSMT5
- Polarity: NPN
- Features: Other
- Package Type: SOT23
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
- Package Type: SOT25
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Supplier: Infineon Technologies AG
Description: NPN Silicon AF Transistor Summary of Features High collector current High current gain Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q105 Potential Applications For general AF applications
- IC(max): 500,000 to 500 milliamps
- VCEO: 45 volts
- VCBO: 50 volts
- fT: 170 MHz
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Supplier: Win Source Electronics
Description: Manufacturer: Nexperia USA Inc. Win Source Part Number: 095924-BC817W Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Family Name: BC817W Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case
- Polarity: NPN
- Features: Other
- Package Type: SOT3, SOT323
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Supplier: Win Source Electronics
Description: Manufacturer: ON Semiconductor Win Source Part Number: 1001924-1HP04CH-TL-W Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C
- V(BR)DSS: 100 volts
- TJ: 150 C
- Features: MOSFET, Other
- Polarity: P-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: Transistor Output Optocouplers Hi-Iso Photo 1-Ch
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Supplier: Utmel Electronic Limited
Description: TRANSISTOR, PNP, SOT223, 1.2W
- Features: Other
- Polarity: PNP
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Polarity: NPN
- Features: Other
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Supplier: DigiKey
Description: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 150mW Surface Mount SOT-323
- Polarity: NPN
- Features: Other
- Package Type: SOT323
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Supplier: PANJIT SemiConductor
Description: Small signal bipolar junction transistor
- IC(max): 50 milliamps
- VCEO: 15 volts
- fT: 600 MHz
- PD: 225 milliwatts
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Supplier: Solid State Devices, Inc.
Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This
- Features: Other
- Polarity: PNP
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Supplier: DigiKey
Description: Optoisolator Transistor Output 5000Vrms 1 Channel
- Isolation Voltage: 5,000 volts
- Rise Time: 3 µs
- Operating Temperature: -55 to 100 C
- Input: DC
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Supplier: ROHM Semiconductor GmbH
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Acme Chip Technology Co., Limited
Description: SOT-363, TRANSISTOR
- VCEO: 40 volts
- IC(max): 200 milliamps
- Features: General Purpose BJT, Other
- Packing Method: Tape Reel
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Supplier: Richardson RFPD
Description: Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz.
- Output Power: 40 watts
- Power Gain: 14 dB
- Operating Frequency: 2 to 500 MHz
- Features: MOSFET RF Transistors, Other
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The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
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QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
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SMA?f (50Ω) N?type, SMA?K, customized connectors Matches standard microwave device interfaces, easy integration Average Power 200W@1G,100W@8G,30W@18G (read more)
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Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Maximum Rds On: 1.6 Ohm @ 300mA, 10V Temperature Range (read more)
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PSUs, the use of GaN devices enables ~0.8–1.2% efficiency improvement at full load compared to silicon, while supporting ~40–70% increases in power density at the stage level, driven by higher switching frequencies and reduced passive component size. In a typical 1 kW high-voltage motor (read more)
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Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features Collector-Emitter Voltage (read more)
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