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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power
- Frequency Range: 1,800 to 1,910 MHz
- Maximum Gain: 27 dB
- Output Power( P1dB): 32 dBm
- Minimum Operating Voltage: 5 volts
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, RADIO POWER RF AMP AMPLIFIER. FREE 2 YEAR RADWELL WARRANTY
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz Output Volts: 0 – 25V rms. (inquire about available output transformers) Output Power: 50W, 250W, 500W and
- Frequency Range: 0.00001 to 1 MHz
- Output Power( P1dB): 53.979400086720375 dBm
- Minimum Operating Voltage: 115 volts
- Maximum Operating Voltage: 230 volts
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Supplier: AR Modular RF
Description: The Model KAW2020 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 200 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232 Interface
- Frequency Range: 200 to 500 MHz
- Minimum Gain: 50 dB
- Output Power( P1dB): 50 dBm
- Gain Flatness: 2 dB
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: WIDE BAND LOW POWER AMPLIFIER, 4 / RF Amplifier IC Product overview: BGU7003W from NXP Semiconductors is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and
- Features: Other
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Supplier: Richardson RFPD
Description: The SKU 1212 is a 2000 to 6000 MHz amplifier which is guaranteed to deliver 50W minimum output power and related RF performance under all specified temperature and environmental conditions. Typical power output is 65W and other typical performance parameters are also
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Supplier: MACOM
Description: measurement and communication systems. Many of the power amplifiers include an on-chip temperature-compensated detector. Power amplifiers offer power up to 15W of power and are offered in a variety of package types for different applications.
- Frequency Range: 0 to 86,000 MHz
- Minimum Gain: 12 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 25 to 39 dBm
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 2W. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 2W. This listing supports clearer product
- Features: Other
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Supplier: DigiKey
Description: RF Amplifier IC Cellular 500MHz ~ 4.5GHz 8-QFN (3x3)
- Frequency Range: 500 to 4,500 MHz
- Minimum Gain: 14.7 dB
- Maximum Gain: 14.7 dB
- Output Power( P1dB): 19.2 dBm
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Supplier: Newark, An Avnet Company
Description: RF POWER AMPLIFIER, 2.2GHZ, 150DEG C ROHS COMPLIANT: YES
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Supplier: Broadcom Inc.
Description: The Avago AMGP-6432 power amplifier is a surface mount packaged 2-Watt amplifier that operates from frequencies between 28-31GHz. AMGP-6432 power amplifier is also suitable for high linear application where the PA demonstrates greater than -38 dBc of third order
- Frequency Range: 28,000 to 31,000 MHz
- Minimum Gain: 18 dB
- Maximum Gain: 25 dB
- Output Power( P1dB): 33.9 dBm
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Supplier: Northrop Grumman Corporation
Description: Limited Samples NEW APN237 GaN Power Amplifier 13.5-15.5 13 40.5 44.5 Die Limited Samples NEW APN149 GaN HEMT High Power Amplifier 18-23 20 36 38 Die Limited Samples APN180 GaN HEMT High Power Amplifier 27-31 21 37 39 Die Pre-Production APN180FP Packaged GaN
- Frequency Range: 10,000 to 46,000 MHz
- Minimum Gain: 13 dB
- Maximum Gain: 25.5 dB
- Output Power( P1dB): 34 to 40.499999999999986 dBm
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a saturated
- Frequency Range: 26,000 to 28,000 MHz
- Minimum Gain: 26 dB
- Maximum Gain: 26 dB
- Output Power( P1dB): 37.5 dBm
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: package options, lifecycle status, and procurement availability. Key searchable attributes include 2W, QFN. Search-friendly keywords include Rf Amplifier, RF Amplifiers, electronic component, datasheet, replacement part, 2W, QFN. This listing supports
- Supply Voltage (VS): 16 volts
- Features: Other
- Standards: RoHS Compliant
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Supplier: Broadcom Inc.
Description: The AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package. It is designed for use in transmitters that operate in various frequency bands between 6GHz and 18GHz.
- Frequency Range: 6,000 to 18,000 MHz
- Minimum Gain: 16 dB
- Maximum Gain: 19 dB
- Output Power( P1dB): 25.999999999999996 to 29.000000000000004 dBm
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Supplier: ValueTronics International, Inc.
Description: The 150W1000 is a 1 GHz 150 Watt RF Amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Minimum: 120 watts
- Frequency Range: 1,000 MHz
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Supplier: Broadcom Inc.
Description: The AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37GHz and 40GHz.
- Frequency Range: 37,000 to 40,000 MHz
- Minimum Gain: 20 dB
- Maximum Gain: 23 dB
- Output Intercept Point (IP3): 37 dBm
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Supplier: APITech
Description: Wide bandwidth and high efficiency are not the only features offered in our full line of high power amplifiers. Utilizing both in-house chip and wire (hybrid), thin film, and SMT technology, our power amplifiers draw from a wide range of leading edge semiconductors.
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Supplier: Broadcom Inc.
Description: The Avago AMMC-6425 MMIC is a broadband 1W power amplifier designed for use in transmitters that operate in various frequency bands between 18 GHz and 28 GHz. This MMIC optimized for linear operation with an output third order intercept point (OIP3) of 38dBm.
- Frequency Range: 18,000 to 28,000 MHz
- Minimum Gain: 20 dB
- Maximum Gain: 20 dB
- Output Power( P1dB): 30 dBm
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Supplier: Skyworks Solutions, Inc.
Description: Please note: SKY65120-21 is being discontinued and is not recommended for new designs. The SKY65120-21 is a fully matched 20-pin, lead-free, surface mount, Multi-Chip Module (MCM) Power Amplifier (PA) designed for WCDMA/PCS/DCS/UTMS/TD-SCDMA Radio, repeaters, transmitters, and WCS
- Frequency Range: 2,110 to 2,170 MHz
- Minimum Gain: 24.6 dB
- Maximum Gain: 24.6 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Skyworks Solutions, Inc.
Description: The SE2433T is a high-performance power amplifier, suitable for Zigbee technology applications, Bluetooth® signals (including low energy), and Bluetooth 1.0 signal applications. The SE2433T is designed for ease of use and maximum flexibility, with an integrated input match and a
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 22 dB
- Maximum Gain: 22 dB
- Minimum Operating Voltage: 2 volts
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Supplier: Qorvo
Description: driver solution that provides the added benefit of operating on the same voltage rail as the corresponding GaN HPA. It can also serve as the output power amplifier in lower power architectures. The QPA2597 is offered in a 4x4 mm plastic overmold QFN. It is internally matched to
- Open-Loop Gain (AVOL): 24 dB
- Supply Voltage (VS): 25 volts
- Operating Range: Commercial, Military
- Features: Other, Power Operational Amplifiers
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Supplier: Skyworks Solutions, Inc.
Description: The SE2609L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates a power detector for closed loop monitoring of the output power. The SE2609L is enabled by a 2.85V reference. The SE2609L temperature
- Frequency Range: 2,400 to 2,500 MHz
- Minimum Gain: 28 dB
- Maximum Gain: 28 dB
- Minimum Operating Voltage: 3.3 volts
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Description: PIDSO's high efficiency linear power amplifier CRD.002-00A is ideally suited for rugged COFDM Video transmission applications in high PAPR scenarios. The high-efficiency linear power amplifier is built for harsh environments and provides 30dB of gain with a P1dB output of
- Package Type: Connectorized
- Amplifier Type: Power Amplifier
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Description: WIDE BAND LOW POWER AMPLIFIER, 4
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0 dBm (1 mW)
- Frequency Range: 1,700 to 2,400 MHz
- Minimum Gain: 45 dB
- Maximum Gain: 45 dB
- Output Power( P1dB): 45.44068044350276 dBm
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Supplier: Qorvo
Description: Qorvo's TQP9107 is a high-efficiency two-stage power amplifier in a low-cost surface-mount package. The amplifier is able to achieve 31% power added efficiency at +27 dBm output power while operating with a low 84 mA idle current. The amplifier is designed
- Frequency Range: 600 to 960 MHz
- Minimum Gain: 35.5 dB
- Maximum Gain: 35.5 dB
- Output Power( P1dB): 31.4 dBm
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPN power amplifiers utilize advanced Millimeter wave Monolithic Integrated Circuits (MMICs) and discrete devices for state-of-the-art power performance up to 4 GHz bandwidth in the 18-95 GHz frequency range. The standard amplifier housing
- Frequency Range: 18,000 to 95,000 MHz
- Minimum Gain: 10 dB
- Maximum Gain: 50 dB
- Output Power( P1dB): 21.00000000000001 to 38 dBm
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Supplier: Qorvo
Description: Qorvo's QPA2610 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.5 GHz, the QPA2610 provides > 2 W of saturated output power and 23 dB of large-signal gain while achieving an impressive 47%
- Frequency Range: 8,500 to 10,500 MHz
- Minimum Gain: 23 dB
- Maximum Gain: 23 dB
- Minimum Operating Voltage: 20 volts
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: RF and Wireless>RF Amplifiers Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Features: Bootstrap Circuit, Diode Emulation Package / Case: 8-SMD, No Lead
- Features: Other
- Applications: Terrestrial RF/Microwave Systems
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Supplier: Qorvo
Description: Qorvo's QPA3070 is a packaged, high-power S-band amplifier. Covering 2.9 - 3.5 GHz, the QPA3070 provides 52 dBm of saturated output power. QPA3070 is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead free and RoHS compliant.
- Frequency Range: 2,900 to 3,500 MHz
- Minimum Gain: 35.4 dB
- Maximum Gain: 35.4 dB
- Minimum Operating Voltage: 50 volts
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Supplier: QuinStar Technology, Inc.
Description: QuinStar’s series QPW power amplifiers utilize advanced MMICs and discrete devices for state-of-the-art CW power performance in the 16-95 GHz frequency range with minimum bandwidth of 5 GHz. The standard amplifier housing offers a wide range and combinations of input and
- Operating Frequency Range: 16 to 95 GHz
- Component Type: Waveguide Amplifiers
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-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
LB5900 Series SPI & I2C General Information LadyBug LB5900 series USB power sensors with option SPI are capable of operation through SPI (Serial Peripheral Interface) or I2C (Inter-Integrated Circuit). The option adds capability and a cable that extends out of the (read more)
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Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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http://dspace.mit.edu/bitstream/handle/1721.1/61148/698127201-MIT.pdf?sequence=2
50-90 MHz which are amplified to a maximum power of 2 Watts by MiniCircuits ZHL-1- 2W RF amplifiers .
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Robust laser frequency stabilization by serrodyne modulation
The output of the VCO is amplified to a power of 27 dBm by a rf amplifier (ZHL-1- 2W -S-09-SMA, Minicircuits) to reach the optimal serrodyne shifting efficiency.
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Video-rate surface profiling with acousto-optic accordion fringe interferometry
A small rf amplifier Minicircuits ZHL-1- 2W brought the AOM drive power to its optimal level of 850 mW.
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Two schemes of modulation-free frequency stabilization of grating-external-cavity diode laser via cesium sub-Doppler spectra
In our experiment, we utilizes two radio-frequency ( RF ) voltage-controlled oscillators (VCO) connected with power amplifier modules (MiniCircuits ZHL-1- 2W ) to drive the corresponding acousto-optical modulators (AOM) (Crystal Technology 2080-122) with slightly different frequency of Ω − ∆ …
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Intelligent front-end sample preparation tool using acoustic streaming.
Tunable RF Source (48‐58MHz) (Praxsym, Fisher, IL) 2 W Power Amplifier ZHL‐1‐ 2W ‐S (Minicircuits, Brooklyn, NY).
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http://dspace.mit.edu/bitstream/handle/1721.1/34294/06442893-MIT.pdf?sequence=2
/ 2w ) < 153.5 Mc/sec. The rf driving signal is obtained from a Hewlett-Packard Model 608D V.H.F. signal generator and amplified to approximately 15 volts rms by a Boonton Model 230A RF power amplifier .
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Ka-Band 2W/4W MMIC Power Amplifiers In A 7 x 7 mm Low-Cost SMT Package
•White Paper: Ka-Band 2W /4W MMIC Power Amplifiers In A 7 x 7 mm Low-Cost SMT Package Free RF Globalnet Newsletter .
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A two-frequency acousto-optic modulator driver to improve the beam
pointing stability during intensity ramps
For the TeO2 AOM we use the following Mini-Circuits components: VCO POS-150, attenuator PAS-3, combiner ZMSC-2-1, amplifier ZHL-1- 2W . tensities with an AOM, one has to change the RF power driving it.
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X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management
… to be combined with other components (Si, SiGe, passives etc) and enable GaN based RF front-ends. The presented amplifier offers continuous wave (CW) output power (Pout) of 34 dBm (power density of 3. 2W /mm) with associated power added efficiency (PAE) of 72% and drain efficiency (DE) of 82% when biased at 15V.
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A monolithic 2.8 V, 3.2 W silicon bipolar power amplifier with 54% PAE at 900 MHz
We have presented a monolithic trans- formercoupled siliconbipolar RF power am- plifier for 80CL1000MHz. The chip delivers3. 2W output power and 54% PAE at 2.8V supply voltage.