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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, RADIO POWER RF AMP AMPLIFIER. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, POWER AMPLIFIER, 15.0 DBM, RF INPUT POWER, +29.0 PA, -2.9 VDC VOLTAGE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: POWER AMPLIFIER MODULE, 800 MHZ, 100W. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, POWER AMPLIFIER, 8040-8500 MHZ, RF INPUT AND MONITOR CONNECTORS, DC MONITOR OUPUT CONNECTOR, DC MONITOR ADJUSTABLE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Richardson RFPD
Description: The OM9901-11 power amplifier module (PAM) is designed and optimized for 2G quad-band cellular handsets supporting user-optional control of linear RF or analog Vramp of the GMSK envelope. The low band (LB) PA transmits in the GSM850/EGSM900 bands. The high band (HB) PA
- Amplifier Type: Power Amplifier
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Supplier: Richardson RFPD
Description: 17.3 to 21.2 GHz High Efficiency Power Amplifier, 1W
- Amplifier Type: Power Amplifier
- Frequency Range: 17300 to 21200 MHz
- Maximum Gain: 24 dB
- Maximum Operating Voltage: 18 volts
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Supplier: Richardson RFPD
Description: The SKY66293-21 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 3400 to 3800 MHz. The active biasing circuitry is
- Amplifier Type: Power Amplifier
- Frequency Range: 3400 to 3800 MHz
- Maximum Gain: 35 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Richardson RFPD
Description: SKY66295-11 is a high-efficiency fully input/output matched power amplifier (PA) with high gain and linearity. The compact 5 x 5 mm PA is designed for FDD and TDD 2G/3G/4G LTE small cell base stations operating from 800 to 900 MHz. The active biasing circuitry is integrated to
- Amplifier Type: Power Amplifier
- Frequency Range: 800 to 900 MHz
- Maximum Gain: 34 dB
- Maximum Operating Voltage: 5 volts
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Supplier: MACOM
Description: At MACOM we design, manufacture, and support a wide variety of power amplifiers for RF, microwave, and millimeter wave applications. Our Power amplifiers cover 40 KHz to 90 GHz operation for a wide range of both linear and saturated applications, including network
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 0.0 to 86000 MHz
- Maximum Gain: 30 dB
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Supplier: AR Modular RF
Description: The Model KAW1080 is a Class A wideband RF power amplifier delivering in excess of 25 Watts CW power into a 50-Ohm load over the frequency range of 10 kHz to 1000 MHz. Power gain is a minimum of 45 dB. GPIB control requires the optional IEEE488.2/RS232
- Amplifier Type: Power Amplifier
- Frequency Range: 0.0100 to 1000 MHz
- Gain Flatness: 2 dB
- Maximum Operating Voltage: 265 volts
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 1.00E-5 to 1 MHz
- Maximum Operating Voltage: 230 volts
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: RF and Wireless>RF Amplifiers Packaging: Bulk Part Status: Obsolete Resistance (Ohms): 45k Tolerance: ±20% Power (Watts): 30 W Composition: Wirewound Features: Bootstrap Circuit, Diode Emulation Package / Case: 8-SMD, No Lead
- Applications: Terrestrial RF/Microwave Systems
- Package Type: Other
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Supplier: DigiKey
Description: RF Amplifier IC General Purpose 2GHz ~ 20GHz Die
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 2000 to 20000 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Northrop Grumman Corporation
Description: Limited Samples APN229 GaN HEMT High Power Amplifier 27-31 20 37 39 Die Pre-Production APN228 GaN HEMT High Power Amplifier 27-31 19.5 39 41.2 Die Limited
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 10000 to 46000 MHz
- Maximum Gain: 25.5 dB
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Supplier: ValueTronics International, Inc.
Description: The 250W1000 is a 1 GHz, 250 W RF amplifier from Amplifier Research. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Rated Output
- Frequency Range: 1000 MHz
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPN power amplifiers utilize advanced Millimeter wave Monolithic Integrated Circuits (MMICs) and discrete devices for state-of-the-art power performance up to 4 GHz bandwidth in the 18-95 GHz frequency range. The standard amplifier housing
- Amplifier Type: Power Amplifier
- Frequency Range: 18000 to 95000 MHz
- Gain Flatness: 1.25 to 4 dB
- Maximum Gain: 50 dB
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Supplier: Qorvo
Description: The RF3628 broad-band linear power amplifier supports B1 (1920-1980MHz), B2 (1850 - 1910MHz), B5 (824 - 849MHz) and B8 (880 - 915MHz) in 3.4 V, 50 O mobile equipment designed for 3G UMTS transmit. RF3628 meets the spectral linearity requirements of HSDPA, HSUPA and
- Amplifier Type: Power Amplifier
- Maximum Gain: 28 dB
- Maximum Operating Voltage: 3.6 volts
- Minimum Gain: 28 dB
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Supplier: Skyworks Solutions, Inc.
Description: 2.3 to 2.7 GHz WiMAX Power Amplifier Module
- Amplifier Type: Power Amplifier
- Maximum Gain: 32 dB
- Maximum Operating Voltage: 4.2 volts
- Minimum Gain: 32 dB
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Supplier: APITech
Description: class ‘A,’ ‘AB,’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating
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Supplier: Fairview Microwave Inc.
Description: and rated at 5 Watt. Our SMA high power RF amplifier design has a 37 dB typical gain. Fairview RF high power amplifier part number FMAM5068 is rated with a Psat of 37 dBm. Our radio frequency high power amplifier is constructed for a minimum
- Amplifier Type: Power Amplifier
- Frequency Range: 2000 to 18000 MHz
- Maximum Gain: 37 dB
- Maximum Operating Voltage: 24 volts
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Description: AMPLIFIER,2 WATT LINEAR POWER
- Frequency Range: 1800 to 2000 MHz
- Maximum Gain: 21 dB
- Minimum Gain: Up to 21 dB
- Package Type: Other
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Description: PIDSO's high efficiency linear power amplifier CRD.002-00A is ideally suited for rugged COFDM Video transmission applications in high PAPR scenarios. The high-efficiency linear power amplifier is built for harsh environments and provides 30dB of gain with a P1dB output of
- Amplifier Type: Power Amplifier
- Package Type: Connectorized
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Supplier: Broadcom Inc.
Description: The AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package. It is designed for use in transmitters that operate in various frequency bands between 6GHz and 18GHz.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 6000 to 18000 MHz
- MMIC Technology Required: Yes
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1700 to 2400 MHz
- Maximum Gain: 45 dB
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Supplier: TMP Pro Distribution
Description: , thermal, ultrasonic, and RF protection. Stable into reactive or mismatched loads. Load Protection On/Off muting, DC-fault power supply shutdown Dimensions 19" (48.3 cm) wide, 3.5" (8.9 cm) tall (2 RU), 14" (35.6 cm) deep (from front mounting rails) Weight 21 lbs (9.5 kg) net
- Type: Amplifier
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Supplier: Acme Chip Technology Co., Limited
Description: AMPLIFIER - POWER
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Supplier: AR Modular RF
Description: The Model KAW4040 is a Class AB wideband RF power amplifier system delivering in excess of 500 Watts CW power into a 50-Ohm load over the frequency range of 200 MHz to 500 MHz. Power gain is a minimum of 57 dB. GPIB control requires the optional
- Connectors / Interfaces: BNC, Type N
- Features: Remote Control, Embedded Power Supply
- Frequency: 0.2000 to 0.5000 GHz
- Gain: 57 dB
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Supplier: Marki Microwave LLC
Description: The ADM3-0022PA has the gain and output power to produce 1W of output power from a +0 dBm input power up to 22 GHz. It contains 3 broadband amplifier stages in series in a single package with built-in equalization to provide a flat gain and output power
- Amplifier Type: Power Amplifier, Other
- Frequency Range: 0.0 to 22000 MHz
- Package Type: Connectorized, Other
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Supplier: Rohde & Schwarz USA, Inc.
Description: The R&S®BBL200 broadband amplifiers are ideal for applications requiring high RF power. The R&S®BBL200 broadband amplifiers generate 3 kW, 5 kW and 10 kW of power in a frequency range from 9 kHz to 225 MHz. They are liquid-cooled, solidstate,
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 0.0090 to 225 MHz
- Gain Flatness: 3 dB
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Supplier: Qorvo
Description: The QPA0004 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band. In S-Band, it provides 9W saturated power over the 3.1 to 3.5GHz frequency range. In X-Band, it provides 8W saturated power from 9 to 11GHz. The QPA0004 is
- Device Type: Power Operational Amplifiers
- Operating Range: Military
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Supplier: ValueTronics International, Inc.
Description: The PM2002 is a used RF Power Meter from Amplifier Research. Radio frequency (RF) power meters are the electronic test equipment of choice to collect information, analyze RF power, and display information in an easy-to-read digital format. Engineers
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Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion products of 25 d (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
-pull amplifiers, and RF power amplifiers. Power amplifiers are typically found in the final output stages of a circuit. There are five classes of power amplifiers: Class A, B, AB, C, and D. Let’s take a look at the characteristics of each. Class A power amplifiers’ (read more)
Browse RF Amplifiers Datasheets for ASAP Semiconductor LLC -
experienced in the design and development of high power amplifier modules and systems for C-UAS and EW. UAS represent a rapidly growing, low-cost, high-reward surveillance and attack threat to military and civilian personnel and infrastructure (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
controlled RF power amplifier ideal for ISM band and industrial wireless communication. With excellent small-signal gain of 32 dB and superior noise performance, it supports reliable mid-power amplification with flexible output control (read more)
Browse RF Amplifiers Datasheets for Win Source Electronics -
Package At Reference: 6 V / 70 mA / 5 GHz: - Gain: 13.5 dB - OIP3: 30 dBm - OP1dB: 16.5 dBm - Evaluation Board Noise Figure: 4.2 dB APPLICATIONS - Microwave Backhaul - C-Band Amplifiers - X-Band Amplifiers - Instrumentation (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA0813 is a packaged, high performance driver amplifier fabricated on Qorvo's production 0.15 um GaAs pHEMT process (QPHT15). Covering 8?-?11 GHz, the QPA0813 provides 0.7 W of saturated output power with 50% power-added efficiency. The device has an Enable / Disable function for fast (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
45 MHz - 1794 MHz, 34V, 18W, 23dB Gain High Output Power Doubler CATV Hybrid The QPA3316 is a Hybrid Power Doubler amplifier module,with 23 dB of gain. The part employs GaAs/GaN die and has an operational bandwidth from 45 MHz to 1794 MHz. It provides excellent (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0023D is a high-performance driver amplifier fabricated on Qorvo's production 0.15 um pHEMT process (QPHT15). Covering 6 – 18 GHz, the QPA0023D provides 13.5 dB small signal gain and 30 dBm P1dB with a saturated power of 32 dBm. In addition, the device has low IMD3 level of (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of small signal gain and 37 % power-added efficiency. Using GaN MMIC technology and plastic packaging, the QPA2597 provides (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
LB5900 Series SPI & I2C General Information LadyBug LB5900 series USB power sensors with option SPI are capable of operation through SPI (Serial Peripheral Interface) or I2C (Inter-Integrated Circuit). The option adds capability and a cable that extends out of the (read more)
Browse RF Power Detectors Datasheets for LadyBug Technologies LLC
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http://dspace.mit.edu/bitstream/handle/1721.1/61148/698127201-MIT.pdf?sequence=2
50-90 MHz which are amplified to a maximum power of 2 Watts by MiniCircuits ZHL-1- 2W RF amplifiers .
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Robust laser frequency stabilization by serrodyne modulation
The output of the VCO is amplified to a power of 27 dBm by a rf amplifier (ZHL-1- 2W -S-09-SMA, Minicircuits) to reach the optimal serrodyne shifting efficiency.
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Video-rate surface profiling with acousto-optic accordion fringe interferometry
A small rf amplifier Minicircuits ZHL-1- 2W brought the AOM drive power to its optimal level of 850 mW.
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Two schemes of modulation-free frequency stabilization of grating-external-cavity diode laser via cesium sub-Doppler spectra
In our experiment, we utilizes two radio-frequency ( RF ) voltage-controlled oscillators (VCO) connected with power amplifier modules (MiniCircuits ZHL-1- 2W ) to drive the corresponding acousto-optical modulators (AOM) (Crystal Technology 2080-122) with slightly different frequency of Ω − ∆ …
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Intelligent front-end sample preparation tool using acoustic streaming.
Tunable RF Source (48‐58MHz) (Praxsym, Fisher, IL) 2 W Power Amplifier ZHL‐1‐ 2W ‐S (Minicircuits, Brooklyn, NY).
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http://dspace.mit.edu/bitstream/handle/1721.1/34294/06442893-MIT.pdf?sequence=2
/ 2w ) < 153.5 Mc/sec. The rf driving signal is obtained from a Hewlett-Packard Model 608D V.H.F. signal generator and amplified to approximately 15 volts rms by a Boonton Model 230A RF power amplifier .
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Ka-Band 2W/4W MMIC Power Amplifiers In A 7 x 7 mm Low-Cost SMT Package
•White Paper: Ka-Band 2W /4W MMIC Power Amplifiers In A 7 x 7 mm Low-Cost SMT Package Free RF Globalnet Newsletter .
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A two-frequency acousto-optic modulator driver to improve the beam
pointing stability during intensity ramps
For the TeO2 AOM we use the following Mini-Circuits components: VCO POS-150, attenuator PAS-3, combiner ZMSC-2-1, amplifier ZHL-1- 2W . tensities with an AOM, one has to change the RF power driving it.
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X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management
… to be combined with other components (Si, SiGe, passives etc) and enable GaN based RF front-ends. The presented amplifier offers continuous wave (CW) output power (Pout) of 34 dBm (power density of 3. 2W /mm) with associated power added efficiency (PAE) of 72% and drain efficiency (DE) of 82% when biased at 15V.
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A monolithic 2.8 V, 3.2 W silicon bipolar power amplifier with 54% PAE at 900 MHz
We have presented a monolithic trans- formercoupled siliconbipolar RF power am- plifier for 80CL1000MHz. The chip delivers3. 2W output power and 54% PAE at 2.8V supply voltage.