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Supplier: MACOM
Description: At MACOM we design, manufacture, and support a wide variety of power amplifiers for RF, microwave, and millimeter wave applications. Our Power amplifiers cover 40 KHz to 90 GHz operation for a wide range of both linear and saturated applications, including network
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 0.0 to 86000 MHz
- Maximum Gain: 30 dB
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Supplier: Northrop Grumman Corporation
Description: Limited Samples APN229 GaN HEMT High Power Amplifier 27-31 20 37 39 Die Pre-Production APN228 GaN HEMT High Power Amplifier 27-31 19.5 39 41.2 Die Limited
- Amplifier Type: Power Amplifier
- Applications: Military / Defense
- Frequency Range: 10000 to 46000 MHz
- Maximum Gain: 25.5 dB
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Supplier: AR Modular RF
Description: The Model KAW1080 is a Class A wideband RF power amplifier delivering in excess of 25 Watts CW power into a 50-Ohm load over the frequency range of 10 kHz to 1000 MHz. Power gain is a minimum of 45 dB. GPIB control requires the optional IEEE488.2/RS232
- Amplifier Type: Power Amplifier
- Frequency Range: 0.0100 to 1000 MHz
- Gain Flatness: 2 dB
- Maximum Operating Voltage: 265 volts
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Supplier: AR Modular RF
Description: The Model KAW2040 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 100 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 100 to 500 MHz
- Gain Flatness: 2.5 dB
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Supplier: AR Modular RF
Description: The Model KAW2020 is a Class AB wideband RF power amplifier delivering in excess of 100 Watts CW power into a 50-Ohm load over the frequency range of 200 MHz to 500 MHz. Power gain is a minimum of 50 dB. GPIB control requires the optional IEEE488.2/RS232
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 200 to 500 MHz
- Gain Flatness: 2 dB
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Supplier: AR Modular RF
Description: The Model KAW2100 is a Class AB wideband RF power amplifier delivering in excess of 200 Watts CW power into a 50-Ohm load over the frequency range of 200 MHz to 500 MHz. Power gain is a minimum of 53 dB. GPIB control requires the optional IEEE488.2/RS232
- Amplifier Type: Power Amplifier
- Applications: SATCOM Amplifier
- Frequency Range: 200 to 500 MHz
- Gain Flatness: 2 dB
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Supplier: ValueTronics International, Inc.
Description: The 757LC is a 1 GHz, 100 W RF amplifier from Kalmus. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Power Output: 100 W
- Frequency Range: 1000 MHz
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Supplier: ValueTronics International, Inc.
Description: 250 kHz to 105 MHz and a linear power output of 100 W. Amplifier gain is a nominal 55 dB. Input/output impedance of 50 ohms, VSWR input 1.5:1 max, output 2.5:1 max. Each unit has a built in meter that indicates both output RF voltage as well as power output
- Frequency Range: 105 MHz
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Supplier: ValueTronics International, Inc.
Description: The M402 is a 200 MHz, 50 W RF amplifier from IFI. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Frequency range: 10 kHz to 220 MHz
- Frequency Range: 200 MHz
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Supplier: ValueTronics International, Inc.
Description: The 1406H is a 1 GHz, 5 W RF amplifier from Hughes. Amplify RF and Microwave signals to measure, test, and design circuits. Applications include radio communications, cellphones, EMI testing, and much more. Additional Features: Frequency range: .5 - 1 GHz
- Frequency Range: 1000 MHz
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Supplier: QuinStar Technology, Inc.
Description: QuinStar Technology’s series QPN power amplifiers utilize advanced Millimeter wave Monolithic Integrated Circuits (MMICs) and discrete devices for state-of-the-art power performance up to 4 GHz bandwidth in the 18-95 GHz frequency range. The standard amplifier housing
- Amplifier Type: Power Amplifier
- Frequency Range: 18000 to 95000 MHz
- Gain Flatness: 1.25 to 4 dB
- Maximum Gain: 50 dB
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Supplier: QuinStar Technology, Inc.
Description: QuinStar’s series QPW power amplifiers utilize advanced MMICs and discrete devices for state-of-the-art CW power performance in the 16-95 GHz frequency range with minimum bandwidth of 5 GHz. The standard amplifier housing offers a wide range and combinations of input and
- Amplifier Type: Power Amplifier
- Frequency Range: 16000 to 95000 MHz
- Gain Flatness: 2 to 3.5 dB
- Maximum Gain: 50 dB
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Supplier: APITech
Description: class ‘A,’ ‘AB,’ linear, and ‘C’ designs in operating frequencies up to 26 GHz with output levels from 500mW to 1 kW. Experts at vertical integration, API is a leading manufacturer of power amplifier subsystems and integrated amplifier assemblies incorporating
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Terrestrial RF/Microwave Systems
- Frequency Range: 1930 to 1990 MHz
- Input VSWR: 2 :1
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC7748 is a multistage power amplifier (PA) that provides 25 W of saturated output power across the band of 2 GHz to 6 GHz. It draws 0.7 A from a 12 V supply and up to 4 A from a 28 V supply. Input signals of as much as -8 dBm are acceptable,
- Amplifier Type: Power Amplifier
- Frequency Range: 2000 to 6000 MHz
- Operating Temperature: -40 to 70 C
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SKY77603 is a hybrid multimode, multiband Power Amplifier Module (PAM) that supports 2.5G / 3G and 4G handsets, and operates efficiently in GSM, EGPRS, EDGE, WCDMA, and LTE modes. The module is fully programmable through MIPI. The PAM consists of a GSM850/EGSM900 PA
- Amplifier Type: Power Amplifier
- Frequency Range: 824 to 1980 MHz
- Package Type: Surface Mount Technology (SMT)
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Supplier: RFMW Ltd.
Description: The RF3225 is a high-power, high-efficiency power amplifier module with integrated power control. This device is self-contained with 50O input and output terminals. The device is designed for use as the GMSK/EDGE power amplifier portion of the
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- RoHS Compliant: Yes
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Supplier: NuWaves Ltd.
Description: The NuPower™ 12D05A is a small, highly efficient, connectorized solid state power amplifier that delivers up to 35 watts of RF power from 1700 to 2400 MHz to extend the operational range of data links and transmitters. The NuPower 12D05A accepts a nominal 0
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Mobile / Wireless Systems
- Frequency Range: 1700 to 2400 MHz
- Maximum Gain: 45 dB
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Supplier: Richardson RFPD
Description: The 3135GN-130 is a 130W RF GaN Power Amplifier Module optimized for S Band Radar covering 3.1-3.5 GHz.
- Amplifier Type: Power Amplifier
- Frequency Range: 3100 to 3500 MHz
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Supplier: AR RF/Microwave Instrumentation
Description: Model 150W1000B, when used with a sweep generator, will provide 150 watts of RF power. Included is a front panel gain control which permits the operator to conveniently set the desired output level. The 150W1000B is protected from RF input overdrive by an RF
- Amplifier Type: Power Amplifier
- Frequency Range: 80 to 1000 MHz
- Input VSWR: 1.5 :1
- Maximum Gain: 52 dB
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Supplier: ROHDE & SCHWARZ, Inc.
Description: The R&S®BBL200 broadband amplifiers are ideal for applications requiring high RF power. The R&S®BBL200 broadband amplifiers generate 3 kW, 5 kW and 10 kW of power in a frequency range from 9 kHz to 225 MHz. They are liquid-cooled, solidstate,
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 0.0090 to 225 MHz
- Gain Flatness: 3 dB
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Description: Features Circuitry: Class B Linear Input Power: 120V AC 60Hz or 230V AC 50Hz Input Signal: 0-2V rms. into 600 ohm load (50 ohm, 75 ohm optional) Frequency Response: 10Hz to 1MHz
- Amplifier Type: Power Amplifier
- Applications: Terrestrial RF/Microwave Systems
- Frequency Range: 1.00E-5 to 1 MHz
- Maximum Operating Voltage: 230 volts
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Supplier: Digi-Key Electronics
Description: 1W RF POWER AMPLIFIER
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 130 to 950 MHz
- Maximum Operating Voltage: 6 volts
- Minimum Operating Voltage: 2.5 volts
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Supplier: Microchip Technology, Inc.
Description: excellent linearity while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications, and is offered in 16-contact VQFN package. Additional Features Applications: WLAN (IEEE 802.11g/b) Home
- Device Type: Power Operational Amplifiers
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Supplier: TMP Pro Distribution
Description: , thermal, ultrasonic, and RF protection. Stable into reactive or mismatched loads. Load Protection On/Off muting, DC-fault power supply shutdown Dimensions 19" (48.3 cm) wide, 3.5" (8.9 cm) tall (2 RU), 14" (35.6 cm) deep (from front mounting rails) Weight 21 lbs (9.5 kg) net
- Type: Amplifier
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Supplier: Qorvo
Description: Qorvo's RF5602 is a linear power amplifier IC designed specifically for medium power applications. The device is designed for use as the final RF amplifier in 802.11b/g/n access point transmitters. The device is provided in a 3mm x 3mm x 0.45mm 16-pin
- Amplifier Type: Power Amplifier
- Frequency Range: 2400 to 2500 MHz
- Maximum Gain: 34 dB
- Minimum Gain: 34 dB
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: Broadcom Inc.
Description: The AMMC-6408 MMIC is a broadband 1W power amplifier in a surface mount package. It is designed for use in transmitters that operate in various frequency bands between 6GHz and 18GHz.
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 6000 to 18000 MHz
- MMIC Technology Required: Yes
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Supplier: Analog Devices, Inc.
Description: Product Details The HMC591 is a high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 23 dB of gain and +34 dBm of saturated power, at 24% PAE from a +7.0V supply. Output IP3 is +43 dBm typical. The
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Supplier: Richardson RFPD
Description: The SKU 1212 is a 2000 to 6000 MHz amplifier which is guaranteed to deliver 50W minimum output power and related RF performance under all specified temperature and environmental conditions. Typical power output is 65W and other typical performance parameters
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Supplier: Pasternack
Description: PE15A3016 medium power broadband amplifier from Pasternack is featured in our extensive in-stock RF amplifier selection. Our connectorized medium power broadband amplifier uses SMA connectors at 50 Ohm. This SMA broadband amplifier has wide-band
- Amplifier Type: Power Amplifier
- Frequency Range: 2000 to 8000 MHz
- Input VSWR: 2 :1
- Maximum Gain: 33 dB
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Supplier: Analog Devices, Inc.
Description: Product Details The ADL5561 is a high performance differential amplifier optimized for RF and IF applications. The amplifier offers low noise of 2.1 nV/vHz and excellent distortion performance over a wide frequency range, making it an ideal driver for high speed 8-bit to
- Device Type: Differential Amplifiers
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Fairview Microwave Inc.
Description: and rated at 2 Watt. Our SMA medium power RF amplifier design has a 31 dB minimum gain. Fairview RF medium power amplifier part number FMAM5034F is rated with a Psat of 31.8 dBm. Our radio frequency medium power amplifier is constructed
- Amplifier Type: Power Amplifier
- Frequency Range: 800 to 4200 MHz
- Maximum Operating Voltage: 13 volts
- Minimum Gain: 31 dB
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Supplier: Picosecond Pulse Labs, Inc.
Description: Features 25 kHz - 45 GHz Bandwidth 9 ps Risetime 2.7 Vamp Eye Amplitude 16 dB Gain 2.4 mm Connectors Applications OC-768 Systems Electro-Absorption Modulator Driver Receiver Amplifier
- Amplifier Type: Other
- Frequency Range: 45000 MHz
- Maximum Gain: 16 dB
- Minimum Gain: 16 dB
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Supplier: Radar Technology, Incorporated
Description: Range-30°C to +71°C Power Requirements±15V DC ConnectorsSMA Optional Specifications DC Coupled Video Output(add suffix D) Power Supplies±12V DC (add suffix C) Matched Set:(Gain/Phase)2,3 units/set (add suffix M) RTSA
- Frequency Range: 160 MHz
- Maximum Gain: 60 dB
- Minimum Gain: 60 dB
- Noise Figure: 5 dB
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Supplier: Infineon Technologies AG
Description: Wideband RF LDMOS Integrated Power Amplifier - 15W, 28V, 1800-2200MHz Summary of Features: - Designed for wide RF bandwidth and low memory effects - Broadband input on-chip matching - Typical two-carrier WCDMA performance at 2140MHz, 28V, 7W avg, - Gain =
- Frequency Range: 1800 to 2200 MHz
- Maximum Gain: 28.5 dB
- Maximum Operating Voltage: 28 volts
- Minimum Gain: 28.5 dB
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Qorvo's QPA2966D is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The QPA2966D operates from 2 to 20 GHz, providing > 20 W of saturated power. QPA2966D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead free and RoHS compliant. (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo® Advances Defense Phased Array Radar Performance and Capabilities with 150W GaN Power Amplifier (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Packaged in a small 5 x 5 mm plastic overmold QFN, tight lattice spacing requirements for phased array radar applications is easily supported. RF input and output ports are matched to 50? and include integrated DC blocking capacitors. QPA2610 is part of a three-amplifier family and is pin compatible to QPA2612 and QPA2611. Lead-free and RoHS compliant. (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo® Adds New GaN Power Amplifiers for Mission-Critical Applications. Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo's QPA2575 is a Ka-band power amplifier fabricated on Qorvo's QPHT15 0.15 um power pHEMT process. The QPA2575 operates from 32 to 38 GHz, providing 3 W of saturated power with 16 % power-added efficiency, and 19 dB small signal gain. To simplify system (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
INDUSTRY’S HIGHEST POWER, LINEARITY AND EFFICIENCY MAXIMIZE PERFORMANCE IN KA-BAND AND X-BAND SYSTEMS Qorvo's QPA2212T is a Ka-band die-on-tab power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 25 W (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
to 60°C and can withstand relative humidity exposure up to 95% mximum. To insure optimum baseplate temperature for highly reliable performance, Pasternack offers 2 new heatsink modules with DC controlled cooling fans that are specifically designed for these power amplifiers (read more)
Browse Datasheets for Pasternack -
class AB broadband high power amplifiers consists of 18 new models spanning frequency bands from 20 MHz to 18 GHz. These designs are unconditionally stable and operate in a 50 Ohm environment. They offer power gain up to 53 dB and saturated output power levels from 10 Watts to 200 Watts. This (read more)
Browse Datasheets for Fairview Microwave Inc. -
7x4x1.2 inch Common Heat Sink and Fan Assembly GaN Models Utilize Silicon on Carbide (SiC) Modules Include Mating Connector with Pigtail assembly Enables discrete or digital RS485 Control of the following (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
WEBINAR: Balancing Throughput and Process Control for Manufacturing of RF Power Amplifier Assemblies The production of RF power amplifiers necessitates both high volume and high quality. In general, finding a balance between maximizing throughput and meeting the required performance (read more)
Browse Die Bonders Datasheets for Palomar Technologies, Inc
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http://dspace.mit.edu/bitstream/handle/1721.1/61148/698127201-MIT.pdf?sequence=2
50-90 MHz which are amplified to a maximum power of 2 Watts by MiniCircuits ZHL-1- 2W RF amplifiers .
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Robust laser frequency stabilization by serrodyne modulation
The output of the VCO is amplified to a power of 27 dBm by a rf amplifier (ZHL-1- 2W -S-09-SMA, Minicircuits) to reach the optimal serrodyne shifting efficiency.
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Video-rate surface profiling with acousto-optic accordion fringe interferometry
A small rf amplifier Minicircuits ZHL-1- 2W brought the AOM drive power to its optimal level of 850 mW.
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Two schemes of modulation-free frequency stabilization of grating-external-cavity diode laser via cesium sub-Doppler spectra
In our experiment, we utilizes two radio-frequency ( RF ) voltage-controlled oscillators (VCO) connected with power amplifier modules (MiniCircuits ZHL-1- 2W ) to drive the corresponding acousto-optical modulators (AOM) (Crystal Technology 2080-122) with slightly different frequency of Ω − ∆ …
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Intelligent front-end sample preparation tool using acoustic streaming.
Tunable RF Source (48‐58MHz) (Praxsym, Fisher, IL) 2 W Power Amplifier ZHL‐1‐ 2W ‐S (Minicircuits, Brooklyn, NY).
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http://dspace.mit.edu/bitstream/handle/1721.1/34294/06442893-MIT.pdf?sequence=2
/ 2w ) < 153.5 Mc/sec. The rf driving signal is obtained from a Hewlett-Packard Model 608D V.H.F. signal generator and amplified to approximately 15 volts rms by a Boonton Model 230A RF power amplifier .
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Ka-Band 2W/4W MMIC Power Amplifiers In A 7 x 7 mm Low-Cost SMT Package
•White Paper: Ka-Band 2W /4W MMIC Power Amplifiers In A 7 x 7 mm Low-Cost SMT Package Free RF Globalnet Newsletter .
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A two-frequency acousto-optic modulator driver to improve the beam
pointing stability during intensity ramps
For the TeO2 AOM we use the following Mini-Circuits components: VCO POS-150, attenuator PAS-3, combiner ZMSC-2-1, amplifier ZHL-1- 2W . tensities with an AOM, one has to change the RF power driving it.
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X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management
… to be combined with other components (Si, SiGe, passives etc) and enable GaN based RF front-ends. The presented amplifier offers continuous wave (CW) output power (Pout) of 34 dBm (power density of 3. 2W /mm) with associated power added efficiency (PAE) of 72% and drain efficiency (DE) of 82% when biased at 15V.
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A monolithic 2.8 V, 3.2 W silicon bipolar power amplifier with 54% PAE at 900 MHz
We have presented a monolithic trans- formercoupled siliconbipolar RF power am- plifier for 80CL1000MHz. The chip delivers3. 2W output power and 54% PAE at 2.8V supply voltage.