9014 NPN Transistors

Description: Manufacturer: ON Semiconductor Win Source Part Number: 756848-SS9014CTA Packaging: Tape & Box (TB) Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 270MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Status: Obsolete Temperature

• Polarity: NPN
• Package Type: SOT3, TO-92

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1094167-SS9014ABU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 270MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case /

• Polarity: NPN
• Features: Other
• Package Type: SOT3, TO-92

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 066062-SS9014BBU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 270MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ)

• Polarity: NPN
• Features: Other
• Package Type: SOT3, TO-92

Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 102461-SS9014CBU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 270MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case /

• Polarity: NPN
• Features: Other
• Package Type: SOT3, TO-92

Description: Bipolar Transistors - BJT Si Planar Trans NPN, 30V, .1A

• Transistor Type: Bipolar RF Transistors

Description: 45V 400mW 100mA NPN SOT-23 Bipolar (BJT) ROHS

Description: 45V 200mW 100mA NPN SOT-23 Bipolar Transistors - BJT ROHS

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• f_T: 150 MHz
• P_D: 200 milliwatts

Description: SS9014 - Small Signal Bipolar Transistor, 0.1A, 45V, NPN, TO-92

• Transistor Type: Bipolar RF Transistors, MOSFET RF Transistors
• Features: Bulk Pack, Other
• Polarity: NPN
• Package Type: TO-92

Description: Bipolar (BJT) Transistor NPN 45V 100mA 270MHz 450mW Through Hole TO-92-3

• Polarity: NPN
• Features: Other
• Package Type: TO-92

Description: BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 50 volts
• f_T: 270 MHz

Description: options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product

• V_CEO: 45 volts
• T_J: -55 to 150 C
• Transistor Type: Bipolar RF Transistors
• Features: Other

Description: NPN BJT Transistor, 45V VCEO, 100mA IC, 270MHz fT, TO-92 Product overview: SS9014DBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 50 volts
• f_T: 270 MHz

Description: TRANS NPN 45V 0.1A TO92-3

• V_CEO: 45 volts
• I_C(max): 100 milliamps
• Features: Bulk Pack, Other
• Transistor Type: General Purpose BJT

Description: TRANS NPN 45V 0.1A TO92-3

• V_CEO: 45 volts
• I_C(max): 100 milliamps
• Transistor Type: General Purpose BJT
• Features: Other, Tape Reel

Description: PS NPN transistor,BC846B 0.1A Ic 5Vce

• Number of Transistors in the Chip: 1
• Transistor Type: General Purpose BJT
• Polarity: NPN
• Features: Other

Description: NPN transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PMBS3906 Features and benefits Low current (max. 100 mA) Low voltage (max. 40 V) Applications General-purpose switching and amplification Telephony and professional communication equipment

• h_fe: 100 to 300
• V_CEO: 40 volts
• I_C(max): 100 milliamps
• P_D: 250 milliwatts

Description: Transistor, NPN, 60V, 5.2A, SOT-223

• V_CEO: 60 volts
• I_C(max): 5,200 milliamps
• Transistor Type: General Purpose BJT
• Polarity: NPN

Description: PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose

• Transistor Type: General Purpose BJT
• Polarity: NPN
• Features: Other

Description: PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified Applications Linear voltage regulators

• Polarity: NPN
• Features: Other
• Transistor Type: Power BJT Transistors

Description: Quad Darlington Sw. NPN 50V 1.75A PDIP16

• Number of Transistors in the Chip: 4
• Transistor Type: Darlington
• Polarity: NPN
• Features: Other

Description: NPN Silicon AF Transistors Summary of Features High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q106 Potential Applications For AF input stages

• I_C(max): 100 milliamps
• V_CEO: 45 volts
• V_CBO: 45 volts
• f_T: 250 MHz

Description: Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // General Purpose Transistor // BDP953

• I_C(max): 3,000 milliamps
• V_CEO: 100 volts
• V_CBO: 120 volts
• f_T: 100 MHz

Description: NPN/PNP Silicon Digital Transistor Array Summary of Features Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor NPN and PNP (R1=22 kΩ, R2=22 kΩ) Pb-free (RoHS

• V_CEO: 50 volts
• V_CBO: 50 volts
• f_T: 130 MHz
• h_fe: 50

Description: NPN Silicon High-Voltage Transistors Summary of Features Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Complementary type: BFN27 (PNP) Pb-free (RoHS compliant) package Qualified according AEC

• I_C(max): 200 milliamps
• V_CEO: 250 volts
• V_CBO: 250 volts
• f_T: 70 MHz

Description: Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 80 V, 130 MHz, 1.5 W, 1 A, 63 RoHS Compliant: Yes

Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available

• h_fe: 300
• V_CEO: 50 volts
• V_CBO: 75 volts
• I_C(max): 800 milliamps

Description: Trans GP BJT NPN 40V 1A 3-Pin TO-39

• I_C(max): 1,000 milliamps
• P_D: 6,250 milliwatts
• T_J: 150 C
• Transistor Type: Darlington

Description: Silicon Complementary Transistors, Audio Power Output and Medium Power Switching High current-gain bandwidth product: fT ≥ 4 MHz Min @ IC ≥ 500 mA (NTE196) Designed for use in general purpose amplifier and switching applications.

Description: 2SCR574D3 is a power transistor with Low VCE(sat), suitable for low frequency amplifier.

• P_D: 10,000 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Polarity: NPN

Description: Bipolar Transistors - BJT NPN BIPOLAR

• V_CEO: 50 volts
• I_C(max): 150 milliamps
• P_D: 150 milliwatts
• T_J: -55 to 150 C

Description: Suitable for the low frequency amplifier.

• P_D: 500 milliwatts
• T_J: -55 to 150 C
• Transistor Grade / Operating Range: Commercial
• Polarity: NPN

Description: signal and power transistors, JANHC and JANKC qualified chips.

• h_fe: 6 to 20,000
• V_CEO: 40 to 500 volts
• V_CBO: 40 to 700 volts
• I_C(max): 1,000 to 20,000 milliamps

Description: Microcurrent device offering good RF performance at 1mA-10mA. The AT-310XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=0.9dB, Gain=13dB at 3V, 1mA; P1dB= 9dBm at 3V, 10mA (all at 900 MHz)

• I_C(max): 16 milliamps
• V_CEO: 5.5 volts
• V_CBO: 11 volts
• f_T: 10,000 MHz

Description: Small signal bipolar junction transistor

• h_fe: 300
• V_CEO: 40 volts
• I_C(max): 600 milliamps
• f_T: 250 MHz

Description: The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise,

• Noise Figure: 2.4 dB
• Polarity: NPN
• Features: Other