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Supplier: Skyworks Solutions, Inc.
Description: Please note: SMS7621-092 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7621-040LF, SMS7621-079LF The SMS7621-092 is a silicon, low barrier n-type Schottky diode anti-parallel pair. This diode pair can be used for sub-harmonic
- Applications: Mixer
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Supplier: Richardson RFPD
Description: The MA4E1338 series is a silicon medium barrier Schottky diode suitable for use in mixer, detector and limiter circuits. These diodes are also suitable for usage in anti-parallel, shunt power surge protection circuits for 50 Ohm and 75 Ohm systems. These Silicon Medium
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: mixers in PCN transceivers and radios, automotive radar systems and police radar detectors. The MA4E2039 anti-parallel pair is designed for use in subharmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.
- Diode Type: Schottky Barrier Diodes, RF Diodes
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transceivers and automotive radars. The MADZ-011003 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input. The MADZ-011005 unconnected pair may be used in temperature-compensated detector circuits, as well as receiver protector limiter circuits. (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD
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High-order subharmonically pumped mixers using phased local oscillators
The antiparallel diode mixer topology—originally described in 1955 by Carlson [1], men- tioned in Saleh’s classic text on resistive mixers [2], and investigated by Büchs in 1971 [3]—received widespread atten- tion for its application to millimeter-wave receivers following the work …
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A QPSK direct‐conversion receiver for wireless communications
Antiparallel diode mixer .
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Balanced subharmonic mixers for retrodirective-array applications
In our study, a pas- sive antiparallel diode mixer was chosen in order to keep the ini- tial demonstrator simple, e.g., it does not need any dc biasing.
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Compact 28-GHz subharmonically pumped resistive mixer MMIC using a lumped-element high-pass/band-pass balun
The antiparallel diode mixer and the resistive field effect transistor (FET)-mixer are the most used in SPM designs.
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A Novel Circuit Architecture for High Performance of High-order Subharmonic Mixers
For one or more antiparallel mixer diode sub-arrays, the current i1, i2, i3 ... in in the individual sub-arrays in Fig. 3 can be represented as follows according to equation (6 .
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MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics
Antiparallel mixer diode pairs can be used to perform efficient subharmonic mixing owing to their providing two conduction maxima per LO cycle.
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http://trs-new.jpl.nasa.gov/dspace/bitstream/2014/40175/1/05-3715.pdf
By adding a 0.5 mA constant current bias path to the IF output circuit, it was possible to operate one of the two antiparallel mixer diodes at greatly reduced LO power, allowing totally automatic operation at the cost of degraded mixer …
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An Improved Architecture of Sixth Subharmonic Mixers in E-Band
Selecting a suitable subharmonic mixer antiparallel diodes and getting accurate diode parameters for harmonic balance analysis in ADS environment.
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Direct Conversion Receivers in Wide-Band Systems
Instead, an antiparallel diode pair mixer is utilized in a direct conversion receiver to avoid the LO-to-RF leakage.
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V-Band High Data-Rate I/Q Modulator and Demodulator With a Power-Locked Loop LO Source in 0.15-μm GaAs pHEMT Technology
To alleviate this problem, the SHP antiparallel connected diode mixer is used because one of the significant features of this mixer is that the 2 LO leakage is very low if the two diodes are symmetric.