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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical
- Polarity: N-Channel
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Supplier: Infineon Technologies AG
Description: regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V GS(th) indicator on the reel Halogen
- VGS(off): -2.1 to -1 volts
- rDS(on): 6 ohms
- TJ: -55 to 150 C
- Features: Depletion, Other, Tape Reel
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Supplier: Microchip Technology, Inc.
Description: The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Polarity: N-Channel
- Package Type: SOT23, SOT89, TO-92
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with
- VGS(off): 0.8 to -3 volts
- rDS(on): 1.4 ohms
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: This low threshold depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high
- Polarity: N-Channel
- Package Type: SOT89
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- rDS(on): 3.5 ohms
- TJ: -55 to 150 C
- Number of Transistors in the Chip: 1
- Transistor Type: MOSFET
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Supplier: Newark, An Avnet Company
Description: DEPLETION MODE MOSFET, 240V, 120mA, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:120mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:1.7W RoHS Compliant: Yes
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- rDS(on): 0.064 ohms
- QG: 224.99999999999997 nC
- PD: 830,000 milliwatts
- TJ: -55 to 175 C
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- V(BR)DSS: 10 volts
- IDSS: 3 milliamps
- rDS(on): 75 ohms
- TJ: 0 to 70 C
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Supplier: Littelfuse, Inc.
Description: Depletion mode MOSFETs, unlike the regular enhancement type MOSFETs, require a negative gate bias to turn off. Consequently they remain on at or above zero gate bias voltage but otherwise have similar MOSFET like characteristics. They are suitable for level shifting, solid state
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and
- Polarity: N-Channel
- Features: Other
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON TYPES 213821 , 213822, 2N3823 JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823, JANTX, JANTXV AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, DEPLETION MODE, MOSFET, 20O, TO-92-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N-Ch Depletion Mode Vertical DMOS FET Product overview: CPC3980ZTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers
- PD: 1.8 milliwatts
- Features: Depletion, Other
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: RS Components, Ltd.
Description: MOSFET, DEPLETION-MODE, 400V, 25 Ohm
- Features: Depletion, Other
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 013258-CPC5602CTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds
- V(BR)DSS: 350 volts
- PD: 2,500 milliwatts
- TJ: -40 to 85 C
- Features: Depletion, Other, Tape Reel
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 1030007-CPC5603CTR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds
- V(BR)DSS: 415 volts
- PD: 2,500 milliwatts
- TJ: -40 to 85 C
- Features: Depletion, Other, Tape Reel
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- Features: Depletion, Other, Tape Reel
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFETs N Ch Dep Mode FET 350V Product overview: CPC5602CTR from IXYS Integrated Circuits is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- PD: 2.5 milliwatts
- Features: Depletion, Other
- Transistor Type: MOSFET
- Polarity: N-Channel
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 500W @ 8us/1%/50V; (PAVG = 5W) ■ 2.998GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package
- Power Gain: 12 dB
- Operating Frequency: 2,998 MHz
- Output Power: 500 watts
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 039684-BSP135 L6906 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max
- V(BR)DSS: 600 volts
- PD: 1,800 milliwatts
- TJ: -55 to 150 C
- Features: Depletion, Other, Tape Reel
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Supplier: Win Source Electronics
Description: Manufacturer: Microchip Technology Win Source Part Number: 1033905-DN2530N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max
- V(BR)DSS: 300 volts
- PD: 1,600 milliwatts
- TJ: -55 to 150 C
- Features: Depletion, Other, Tape Reel
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK = 1000W @ ELM Mode S / 6.4% / 50V; (PAVG = 64W) ■ 1.030GHz Operating Frequency ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation
- Power Gain: 17 dB
- Output Power: 1,000 watts
- Operating Frequency: 1,030 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: TA9210D-EVB-D is a test fixture for TA9210D , a depletion mode GaN HEMT, optimized for 30-1000MHz.
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and
- Frequency Range: 450 to 6,000 MHz
- Minimum Gain: 15.5 dB
- Maximum Gain: 15.5 dB
- Noise Figure: 0.65 dB
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode / Trans RF MOSFET N-CH 20V 0.03A Product overview: BF995 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power
- Transistor Type: MOSFET
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Description: IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
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Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 This test method is applicable to all enhancement-mode and depletion-mode
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Supplier: ASTM International
Description: 1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current. Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor. 1.2 The test method is applicable to all enhancement-mode and depletion-mode
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Supplier: Infineon Technologies AG
Description: LIN transceivers BSS84P | Small signal/small power MOSFET BSS159N | N-Channel Depletion Mode MOSFET SAK-TC397XP-256F300S BD | AURIX™ Family – TC39xXX BSS83P | Small signal/small power MOSFET TLE9255WSK | Automotive CAN transceivers TLE7258SJ | Automotive LIN transceivers TLE7259-3GE |
- tON: 150,000 ns
- tOFF: 150,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Item Specification Channel Quantity 225 independent isolated channels Transmission Mode (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
packages, including bottom-side-cooled ThinPAK, DFN, TOLL, and DPAK packages, they are well-suited for a wide range of consumer applications with slim form factors. The CoolGaN Transistor Dual 650 V G5 family combines a half-bridge power stage consisting of two 650 V enhancement mode Cool (read more)
Browse Transistors Datasheets for DigiKey
Conduct Research Top
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
and zero threshold transistors, ALD EPAD technology. enables the same well controlled turn-off, subthreshold, and low. leakage characteristics as standard enhancement mode MOSFETs
More Information Top
Indicates content that may require registration and/or purchase.
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Process techniques of charge transfer time reduction for high speed CMOS image sensors
Key words: CMOS image sensors; high speed; large-area pinned photodiode; charge transfer time; doping con- centration; depletion mode transistor DOI: 10.1088/1674-4926/35/11/114010 .
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Noise characteristics of n-channel deep-depletion mode MOS transistors
A substrate bias of at least - 5 V was required in the deep- depletion mode transistors studied here to turn the device ‘off.
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Fundamentals of III-V Semiconductor MOSFETs
Depletion mode transistor and self-aligned n- and p-channel enhancement GaAs MOSFETs using HfO2 and silicon IPL with the results of plausible characteristics will be presented.
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http://repositories.lib.utexas.edu/bitstream/handle/2152/3974/oki43579.pdf?sequence=2
Depletion mode transistor and self-aligned n- and p-channel GaAs MOSFETs .
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Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors
Fig. 5 Output characteristics of the depletion mode transistor (VGS = 0.0V to −0.7V in 0.1V steps .
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Emerging Memories
The solution proposed by Infineon to avoid refresh was to put two depletion mode transistors under the passing word-lines ofthe folded bit-line FeRAM as shown in cell cross-section Figure 1.32b.
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Survey of cryogenic semiconductor devices
On the other hand the threshold voltage of depletion mode transistors sharply decreases below 160K.
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Symbolic constraint handling through unification in finite algebras
In nMOS technology there are basically two types of transistors, n-transistors and depletion mode transistors .
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Comparison between Experiment and Process Simulation Results for Converting Enhancement to Depletion Mode NMOS Transistor
Both enhancement and depletion mode transistors are used in many of today’s microelectronic circuits.
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WARM SRAM: a novel scheme to reduce static leakage energy in SRAM arrays
The specific warmup CMOS design style presented in this paper relies upon depletion mode transistors to provide proper biasing to reduce the leakage.