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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- Package Type: SOT223, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET
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Supplier: Infineon Technologies AG
Description: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel depletion mode MOSFET BSS169I in SOT-23-3 package features VDS 100 V and RDS(on),max of 12 Ohm. With an optimal price
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel depletion mode MOSFET BSS139I in SOT-23-3 package features VDS 250 V and RDS(on),max of 30 Ohm. With an optimal price
- MOSFET Operating Mode: Depletion
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Infineon Technologies AG
Description: current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel. Summary of Features Depletion mode dv/dt rated Available with V
- Package Type: SOT23, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET N-CHANNEL DEPLETION MODE
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: MOSFET D2 Depletion Mode Power MOSFETs
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Littelfuse, Inc.
Description: Depletion Mode MOSFET DevicesOur N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process which realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Package Type: SOT23
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND150 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp
- Package Type: TO-92, SOT23, SOT89
- Polarity: N-Channel
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Supplier: Microchip Technology, Inc.
Description: The LND01 is a low threshold, depletion-mode (normally-on) transistor utilizing an advanced lateral DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high
- Package Type: SOT23
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input
- Package Type: SOT89, TO-251 / TO-252
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-220, Other
- Polarity: N-Channel
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Supplier: Littelfuse, Inc.
Description: As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power
- Package Type: TO-247, Other
- Polarity: N-Channel
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 8-PDIP
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Through Hole 16-PDIP
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Advanced Linear Devices, Inc.
Description: MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 8-SOIC
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON TYPES 213821 , 213822, 2N3823 JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, AND 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823, JAN, JANTX, JANTXV, AND JANS
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3822, 2N3823 JAN, JANTX, JANTXV, AND JANS
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, DEPLETION MODE, MOSFET, 20O, TO-92-3. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 12us/3%/50V ¦ 2.856GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1346802-IXTT10N100D Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion
- MOSFET Operating Mode: Depletion
- PD: 400000 milliwatts
- Package Type: SOT3
- Polarity: N-Channel
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET DepletionMode MOSFET
- Transistor Type: MOSFET
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Supplier: Rochester Electronics
Description: 60V-600V N-Channel Depletion Mode MOSFET
- Package Type: SOT23, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Package Type: EMH Polarity: P Number of Elements: 2 Power Dissipation: 1.2(W) Continuous Drain Current: 3(A) Gate-Source Voltage (Max): ±10(V) Channel Mode: Depletion Drain-Source On-Volt: 20(V) Popularity: Low Fake Threat In the Open Market: 38 pct. Supply and Demand Status:
- Polarity: Other
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 50W @ 1ms/15%/50V ¦ 5.2-5.9GHz Instantaneous Operating Frequency Range ¦ 50O Internally Impedance Matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required
- Output Power: 50 watts
- Package Type: Other
- Power Gain: 14 dB
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Richardson RFPD
Description: TA9110K-EVB-C is a test fixture for TA9110K , a depletion mode GaN HEMT, optimized for 3.3-3.8GHz.
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Supplier: RS Components, Ltd.
Description: The Microchip LND01 is a low threshold, depletion mode (normally on) MOSFET transistor. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices. Channel Type = N Maximum
- Package Type: SOT23, Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Supplier: Skyworks Solutions, Inc.
Description: The SKY65050-372LF is a high performance, n-channel lownoise transistor. The device is fabricated from Skyworks advanced depletion mode pHEMT process and is provided in a 2.20 x 1.35 x 1.10 mm, 4-pin SC-70 package. The transistor’s low Noise Figure (NF), high gain, and
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 450 to 6000 MHz
- Maximum Gain: 15.5 dB
- Maximum Operating Voltage: 3 volts
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Description: N enhancement and depletion-mode discrete power devices; b) GaN integrated power solutions; c) the above in wafer and package levels. The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power
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Item Specification Channel Quantity 225 independent isolated channels Transmission Mode (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd.
Conduct Research Top
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Performance Characteristics of EPAD (R) Precision Matched Pair MOSFET Array
and zero threshold transistors, ALD EPAD technology. enables the same well controlled turn-off, subthreshold, and low. leakage characteristics as standard enhancement mode MOSFETs
More Information Top
Indicates content that may require registration and/or purchase.
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Process techniques of charge transfer time reduction for high speed CMOS image sensors
Key words: CMOS image sensors; high speed; large-area pinned photodiode; charge transfer time; doping con- centration; depletion mode transistor DOI: 10.1088/1674-4926/35/11/114010 .
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Noise characteristics of n-channel deep-depletion mode MOS transistors
A substrate bias of at least - 5 V was required in the deep- depletion mode transistors studied here to turn the device ‘off.
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Fundamentals of III-V Semiconductor MOSFETs
Depletion mode transistor and self-aligned n- and p-channel enhancement GaAs MOSFETs using HfO2 and silicon IPL with the results of plausible characteristics will be presented.
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http://repositories.lib.utexas.edu/bitstream/handle/2152/3974/oki43579.pdf?sequence=2
Depletion mode transistor and self-aligned n- and p-channel GaAs MOSFETs .
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Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors
Fig. 5 Output characteristics of the depletion mode transistor (VGS = 0.0V to −0.7V in 0.1V steps .
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Emerging Memories
The solution proposed by Infineon to avoid refresh was to put two depletion mode transistors under the passing word-lines ofthe folded bit-line FeRAM as shown in cell cross-section Figure 1.32b.
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Survey of cryogenic semiconductor devices
On the other hand the threshold voltage of depletion mode transistors sharply decreases below 160K.
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Symbolic constraint handling through unification in finite algebras
In nMOS technology there are basically two types of transistors, n-transistors and depletion mode transistors .
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Comparison between Experiment and Process Simulation Results for Converting Enhancement to Depletion Mode NMOS Transistor
Both enhancement and depletion mode transistors are used in many of today’s microelectronic circuits.
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WARM SRAM: a novel scheme to reduce static leakage energy in SRAM arrays
The specific warmup CMOS design style presented in this paper relies upon depletion mode transistors to provide proper biasing to reduce the leakage.