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Supplier: Marktech Optoelectronics
Description: InGaAs/InP Epitaxial Wafers With 'SuperLong' Wavelengths from 1.7µm - 2.6µMarktech Optoelectronics offers the highest purity InGaAs/InP Epitaxial Wafers in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality Indium
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Supplier: Cosmic Equipment SpA
Description: The FTI-1000 is a purpose-built ATE system designed for high-coverage wafer-level testing of power discrete devices, wide-bandgap components, and gate-driver-integrated power ICs. Suitable for both engineering characterization and high-volume wafer sort, the system integrates
- Form Factor: Monitor / Instrument
- Applications: Semiconductor Wafers
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Supplier: Cosmic Equipment SpA
Description: The FTI-1000 is a purpose-built ATE system designed for high-coverage wafer-level testing of power discrete devices, wide-bandgap components, and gate-driver-integrated power ICs. Suitable for both engineering characterization and high-volume wafer sort, the system integrates
- Form Factor: Monitor / Instrument
- Applications: Semiconductor Wafers
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Supplier: Cosmic Equipment SpA
Description: Wide bandgap SiC technology is opening up a whole new generation of high voltage power products for applications in transport, power transmission and green energy. M2 Wafer edition tests these upto 10kV on wafer before singulation, identifying defective product early and saving the
- Form Factor: Monitor / Instrument
- Applications: Semiconductor Wafers
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Supplier: Utmel Electronic Limited
Description: Headers & Wire Housings New 2.0 WtB Wafer As Wafer Assy Str 7Ckt
- Voltage Rating: 125 volts
- Current Rating: 2 amps
- Contact Resistance: 20 milliohms
- Operating Temperature: -40 to 105 C
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Supplier: Jiangyin Deli Laser Solutions Co., Ltd.
Description: Fast scribing speeds; high yield rates; high production capacity Produces high-quality results with no residue or melt-back Fully-automatic processing; integrated coating application, wafer cutting, and cleaning functions Laser type: DPSS 355nm ultraviolet laser Laser power: ≥5W Cooling
- Laser Output Power: 0 to 5 watts
- Type: Complete / Turnkey System
- Laser Operation: Laser Cutting
- Options / Components: Laser Head / Focusing Unit, Laser Optics / Beam Delivery, Laser System Enclosure, Monitoring Sensors / System
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Supplier: Cosmic Equipment SpA
Description: Wide bandgap SiC technology is opening up a whole new generation of high voltage power products for applications in transport, power transmission and green energy. M2 Wafer edition tests these upto 10kV on wafer before singulation, identifying defective product early and saving the
- Form Factor: Monitor / Instrument
- Applications: Semiconductor Wafers
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Supplier: Daitron Co., Ltd.
Description: The wafer edge grinders are designed to grind edge and circumference of a wide variety of wafers including silicon, compound semiconductors, such as, SiC, GaN, GaAs, and InP, oxide wafers, such as sapphire, quartz, LT, and LN, and glass, at high precision through
- Maximum Wafer / Part Size: 50.799972568014816 to 203.19989027205926 mm
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
- Applications: Semiconductor Wafers
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Supplier: Hitachi High Technologies America, Inc.
Description: The wafer surface inspection system LS series can detect defects on unpatterned wafers with a mirror-finished surface. Applied technology of laser scattering achieves high sensitivity and high throughput detection of small contaminants and various types of defects on wafer
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Wafer Probing System
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Supplier: Monocrystal, Inc.
Description: Wafers and blanks are produced from crystals grown using the Kyropoulos method. Advantages of our wafers: high material purity: > 99.997%; low impurity content Ti: < 1 ppm; low dislocation density: < 103 cm-2; orientation tolerance: up to ± 0.05 degrees. Sapphire wafers for
- Thickness / Wall Thickness: 0.005905515 to 0.0393701 inch
- Diameter: 2 to 10 inch
- Width / O.D.: 2 to 10 inch
- Features: Dielectric Ceramics / Materials
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Supplier: Hamamatsu Photonics Europe
Description: observation, it is particularly suitable for low-magnification microscopic observation and macro lens observation, such as void detection and pattern inspection of Si-bonded wafers, and inspection of damage to agricultural products.
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Supplier: Nikon Metrology
Description: The NWL200 series is the first lineup of wafer loaders for inspection microscopes capable of loading 100 micron thin wafers. Thanks to a new chuck system, the NWL200 series achieves highly reliable loading suitable for inspection of next-generation semiconductors. Improved
- Maximum Wafer / Part Size: 200 mm
- Measurements: Defects / ADC
- Mounting / Loading: Floor Mounted / Stand-alone
- Features: Non-contact, Non-destructive, Other
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Supplier: inTEST Thermal Solutions
Description: Temptronic ThermoChucks are conductive heating and cooling systems for wafer testing at temperature. Its primary use is for wafer testing in Probe Stations, as well as Laser Trim and Wafer Burn-in. A few specialized applications include Low leakage probing (fA level), and High
- Actuation: Electric
- Chuck Type: Wafer Chuck
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Supplier: MTI Instruments Inc.
Description: sori, site and global flatness. User-defined and ASTM/SEMI compliant scan patterns are used to generate full 3-dimensional (3D) wafer images. Customized data reports are available for viewing tabular data of each wafer measured with quick, easy export to your spreadsheet program.
- Maximum Wafer / Part Size: 300.00000000000006 mm
- Measurements: Area Mapping, Roughness / Waviness, Shape / Flatness, Thickness - Wafer / Disc (TTV)
- Technology: Capacitance / EM Gage
- Mounting / Loading: Manual Loading
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Description: A ceramic wafer chuck is a specialized tool employed in the semiconductor industry to hold wafers in a secure position. It functions as a stable platform that guarantees consistent contact and precise positioning of the wafer during many procedures, including lithography,
- Features: Alumina / Aluminum Oxide, Specialty Ceramic
- Applications: Chemical / Materials Processing, Electrical / HV Parts
- Specialty Ceramic Type: Silicon Carbide, Silicon Nitride, Tungsten Carbide (WC)
- Shape / Form: Wafer Carrier / Holder
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Supplier: Accuris
Description: Butterfly valves for waterworks purposes, Part 1: Wafer and lugged
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Supplier: El-Cat, Inc.
Description: EL-CAT Inc. is a stocking distributor of Silicon Wafers, Compound Semiconductors and other Crystal Materials for use in electronics.
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Supplier: Marktech Optoelectronics
Description: the 1.0 um to 2.6um range, using InP material as the base substrate. Marktech is currently producing these high reliability wafers in 2", 3" and 4" diameters. Among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using
- Active Area Diameter or Length: 0.30000000000000004 mm
- Photodiode Material: Indium Gallium Arsenide
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: Rigaku Corporation
Description: Rigaku's WaferX 300 represents the culmination of 25 years of experience in the X-ray fluorescence analysis of thin films on silicon wafers. Specifically developed as an in-process metrology tool, the system incorporates "bridge tool" technology — servicing 6", 8", as well as the latest 12"
- Maximum Wafer / Part Size: 150.00000000000003 to 300.00000000000006 mm
- Measurements: Composition, Thickness - Film / Layer
- Mounting / Loading: Floor Mounted / Stand-alone
- Form Factor: Monitor / Instrument
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Description: ICC supply material blanks, as cut,lapped and 2” to 8” wafers. Include optical,mirror and semiconductor grade silicon material.
- Features: Specialty / Other
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Supplier: MultiDimension Technology Co., Ltd.
Description: MDT's magnetic sensor foundry has the capability to fabricate 6 inch (currently)/8 inch(in plan) wafers at 0.5-micron (μm).Unlike other wafer foundries in Mainland China, MDT's foundry specializes in magnetic device wafer fabrication, providing professional service with the
- Processes: 0.50µm Process
- Services: Design / Engineering, Pilot / Scale-Up, Production, R & D / Development
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Supplier: CoorsTek
Description: End effectors, also referred to as semiconductor handling "blades", are the robot's hand to handle and move semiconductor wafers between positions. So end effectors must be dimensionally precise and thermally stable, while having a smooth, abrasion-resistant surface to safely handle
- Features: Alumina / Aluminum Oxide, Carbide Materials, Silica / Silicate Materials, Specialty Ceramic
- Specialty Ceramic Type: Aluminum Nitride, Quartz, Silicon Carbide, Yttria
- Applications: Chemical / Materials Processing, Wear Parts / Tooling
- Shape / Form: Wafer Carrier / Holder
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Supplier: Robuster Quartz
Description: Quartz boat is a loader which can be inserted by silicon wafer. So it is applied in semiconductor area. The cleaning process for quartz boat is very strictly. The boat should be dipped in concentration of 4-5% HF solutions keeped for 4 hours. Then soaked in DI water for 1 hours. Quartz boat,
- Shape / Form: Fabricated / Custom Shape
- Glass Type: Quartz
- Features: Specialty / Other
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Supplier: Filmetrics, Inc.
Description: Product-Wafer Metrology Made Affordable Process engineers want film thickness measurements fast and without a lot of hassle. Our innovative Thickness Imaging™ technology allows Filmetrics to offer easy recipe set up and industry-leading throughput, at a mere fraction of the cost of competing
- Measurements: Area Mapping
- Applications: CVD / PVD Films, Semiconductor Wafers
- Mounting / Loading: In-situ / System Mounted
- Form Factor: Monitor / Instrument
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Supplier: 3X Ceramic Parts Company Limited
Description: Silicone Nitride Ceramic Wafer Material Description : Silicon nitride ceramic material has high hardness, low density, wear resistance and high temperature resistance. The rolling body is made of silicon nitride ceramic, while the other components are paired with bearing steel to form
- Density: 3.1999979803934133 g/cc
- Thermal Conductivity: 15 to 20 W/m-K
- Coeff. of Thermal Expansion (CTE): 3.3 µm/m-C
- MOR / Flexural Strength: 87,022.1036143182 psi
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Supplier: Technic, Inc.
Description: Designer for laboratory testing and sampling, Technic’s portable tabletop wafer plating test cell features all the tools needed to simulate full scale production. Specifications 16” long, 12” wide, 14” deep constructed from ½” thick natural polypropylene with flange anode rod as required for
- Applications: Research / Surface Analysis, Semiconductor Manufacturing
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Supplier: Plansee SE
Description: Wafer substrates are bonded to the semiconductor layers of LED chips. With molybdenum and molybdenum-copper wafer substrates, PLANSEE offers the optimum material for a reliable heat dissipation in LED chips. The uniform thermal expansion of the wafer substrate, sapphire
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: Operational Amplifiers
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Supplier: 3X Ceramic Parts Company Limited
Description: φ150mm ) silicone wafer , thickness 675 um . They want this part in 99% alumina ceramic . We don’t have the standard wafer boats for customer wafer size , but we custom made it . Before this projects , we have made a 99% alumina horizontal wafer boat , it is for
- Material Type: Carbide Materials, Silicon Carbide
- Shape / Form: Fabricated / Custom Shape
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Supplier: Indium Corporation
Description: Features Water-soluble Viscosity suitable for 150–300 mm wafers as a damming flux No residue after multiple reflow/cleaning cycles Uniform bump shape Halogen-free Suitable for SnPb and Pb-free, and high temperature applications Non-corrosive to underbump metallization Introduction
- Features: Other
- Fluxes & Cleaners: Soldering Flux / Rosin
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Description: IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer
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Supplier: CSA Group
Description: IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer
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Supplier: KSB AG
Description: Design Wafer-type globe valve in super compact DN face-to-face length, slanted seat, bonnetless, with flange alignment holes for centering, dead-end service and downstream dismantling, insulating cap with anti-condensation feature as standard, position indicator, soft main and back seat;
- Valve Size: 0.787402 to 7.87402 inch
- Pressure Rating: 232.06032 psi
- Media Temperature: 14 to 248 F
- Number of Ports/Ways: 2
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Supplier: G.I.E. Inc.
Description: FEATURES1. Face to Face dimensions as per as perANSI B16.10150# Narrow / EN558-2 Series 20.2. Suitable for mounting betweenANSI B16.5 150#flanges3. Testing as perAPI 598 / EN12266-14. Stem connection and integrated actuator mountingflange as perISO5211.5. Spring loaded stem seal.6. Elastomeric
- Valve Size: 5 inch
- Number of Ports/Ways: 2
- Features: API, ISO
- Valve Type: Butterfly Valves, Shut Off Valves
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Featured Products Top
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Watch>> - Sapphire for GaAs, Indium Phosphide, & Other Semiconductors Sapphire Wafer Carriers (read more)
Browse Wafer Cassettes Datasheets for Insaco, Inc. -
Watch>> - Sapphire for GaAs, Indium Phosphide, & Other Semiconductors Sapphire Wafer Carriers (read more)
Browse Wafer Cassettes Datasheets for Insaco, Inc. -
, INSACO has perfected the ability to produce sapphire wafer carriers with or without multiple holes for GaAs, Indium Phosphide, and other compound semiconductors. Why Sapphire? Superior chip resistance (read more)
Browse Glass Fabrication Services Datasheets for Insaco, Inc.
Conduct Research Top
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
must go to Xerox, but license can be terminated SEZ, Samsung to develop 300-mm single-wafer etch, cleaning Vitesse's 6-inch GaAs wafer fab receives ISO 9000 certification Trillian makes headway on Linux for Intel's Merced David Lam joins board of
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M542: Electrical Characterizations of Packages for use with GaAs MMIC Amplifiers
A test methodology will be presented which combines the advantage of on-wafer RF probing with a TRL calibration to create a completely de-embeddable, novel "test fixture" capable of electrically characterizing most any style package or device. This scheme has been used to characterize many
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Credence completes ATE acquisition of NPTest UTAC probes UMC's Singapore fab Ellipsiz sets up reliability test lab in Shanghai Dell's new printers--a threat to HP without IP? Intel planning Indian manufacturing, say reports IR plans $40 million spend on Welsh wafer fab Gartner predicts memory
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
into SOC business, says Taiwanese executive IMS to provide tools for Advantest logic testers Samsung orders RDRAM testers from Schlumberger Motorola tips its RF IC strategy, revealing GaAs FET and SiGe amp Zygo metrology tool increases precision of wafer planarity measurement Intel invests
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Semiconductor IPOs range from successful to disappointing IP trading center planned to serve Japanese designers Atmel, SST continue to battle over patent issues Matheson achieves new efficiencies by centralizing gas-equipment operations ATMI expands GaAs epitaxial wafer production to meet customer
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
NEC plans major restructuring, but semiconductors will not be touched Module features Patriot's Java MPU ASML taps Extraction's monitor for DUV demo cell Philips MCU in Visa smart card Samsung, Hyundai pick TI's ADSL chip set MEMC says new technique improves wafers for higher yields Anadigics DC/DC
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
MEMC says new technique improves wafers for higher yields U.K. to help Filtronic set up GaAs fab in Fujitsu plant France, Italy to lose control of STMicroelectronics IMP names interim CEO and COO Linear Technology to appeal ruling in patent case against Micrel Rudolph names Smith as U.S. sales
More Information Top
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http://dspace.mit.edu/bitstream/handle/1721.1/45498/47264589-MIT.pdf?sequence=2
Silicon-on- GaAs wafer : .
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Q-switching of diode-end-pumped Nd:YVO4 laser with GaAs output coupler
To improve the compactness of Q-switched diode-pumped solid-state lasers, a passively Q-switched diode-end-pumped Nd:YVO4 laser was constructed using undoped and uncoated GaAs wafers as saturable absorbers as well as output couplers.
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Surfactantless Synthesis of Silver Nanoplates and Their Application in SERS
Silver nanoplates have been grown on semiconductor substrates through simple galvanic reactions between an aqueous solution of AgNO3 and GaAs wafers .
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http://dspace.mit.edu/bitstream/handle/1721.1/8368/50550216-MIT.pdf?sequence=2
The successful bonding of bare thinned Si SOI wafers to bare GaAs wafers in previous research has proven to be an important first step in achieving integration of Si electronics with GaAs optoelectronic devices.
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Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors
The fabrication process of GaAs wires includes two major steps: defining photoresist (PR) patterns on a (100) GaAs wa- fer using photolithography, and chemically etching the GaAs wafer through the PR-patterned mask.
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The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs
This loss can be minimized by the use of dielectric encapsulation, by annealing in a controlled atmosphere with As overpressure, or by proximity annealing with GaAs in close contact to another GaAs wafer or an inert substrate.
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Chalcogenide glass films for the bonding of GaAs optical parametric oscillator elements
Optimised conditions for thermal bonding pairs of glass coated GaAs wafers are also reported.
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Novel approach to realizing quasi-phase-matched gallium arsenide optical parametric oscillators for use in mid-IR laser systems
A major advantage of this approach is the tolerance to GaAs wafer thickness variations and to defects at the surface of the GaAs wafers.
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Final Report for PV Incubator Subcontract No. NEU-0-99010-09: March 29, 2010 - March 28, 2011
An IR reflectivity image of a GaAs- GaAs wafer bonded sample is shown in Figure 12.
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