GaAs Wafer

Description: . Wafer Specifications Diameter: 150 mm, 200 mm, 300 mm Material: All semiconducting and semi-insulating wafers including Si, GaAs, Ge, SiC, InP Surfaces: As-Cut, Lapped, Etched, Polished, Patterned Flat/Notch: All SEMI Standard Flat(s) or Notch Conductivity: P or N Type

• Applications: Semiconductor Wafers
• Area Mapping: Yes
• Form Factor: Wafer Probing System, Sensor / Sensing Element
• Maximum Wafer / Part Size: 300 mm

Description: Quartz boat is a loader which can be inserted by silicon wafer. So it is applied in semiconductor area. The cleaning process for quartz boat is very strictly. The boat should be dipped in concentration of 4-5% HF solutions keeped for 4 hours. Then soaked in DI water for 1 hours. Quartz boat

• Glass Type: Quartz
• Shape / Form: Fabricated / Custom Shape, Specialty / Other

Description: EL-CAT Inc. is a stocking distributor of Silicon Wafers, Compound Semiconductors and other Crystal Materials for use in electronics.

Description: 1.1 This destructive test method determines whether a given sample of semi-insulating gallium arsenide (GaAs) will remain semi-insulating after exposure to the high temperatures normally required for the activation of implanted layers. 1.2 The underlying assumption is that other wafers

Description: 1.1 This destructive test method determines whether a given sample of semi-insulating gallium arsenide (GaAs) will remain semi-insulating after exposure to the high temperatures normally required for the activation of implanted layers. 1.2 The underlying assumption is that other wafers

Description: Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6µm, ideally suited for high speed, long wavelength imaging, high speed HBT and HEMTs, APDs and analog-digital converter circuits. Applications using InP-based components can greatly exceed transmission rates in comparison to

Description: 1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px. 1.2 Photoluminescence measurements indicate the composition only in the

Description: 1.1 This test method covers the techniques used to determine the wavelength of the photoluminescence peak and the mole percent phosphorus content of gallium arsenide phosphide, GaAs(1 x)Px. 1.2 Photoluminescence measurements indicate the composition only in the

Description: System Overview The SEMCON 4000 is an automatic loading and unloading “wet bench” type wafer Under Bump Metalization tool, designed with processes for Nickel and Gold metalization of silicon and Ga/As wafers with aluminum or copper seed layer. The Semcon 4000 tool is

• Application / Industry: Semiconductor / Wafer, Solar / Photovoltaic
• Equipment / System Type: Automated System
• Process / Technology: Electroplating

Description: This system is made for smaller production facilities, R&D facilities and universities. The system features an implosion proof 8” w x 8” d x 4” h Rectangular welded Aluminum Vacuum Chamber and a direct powered RF electrode. Applications include medical devices, solar cells, printed circuit boards,

• Coating System Type: Laboratory / Benchtop
• Materials Processed (Deposit or Substrate): Metal, Compound Semiconductors / GaAs, Tungsten / Refractory Metal, Other
• Technology / Process: Plasma Etching / Cleaning
• Vacuum / Pressure Range: Medium (< 1, >10-3 torr), Other

Description: This system is made for smaller production facilities, R&D facilities and universities. The system features an implosion proof 6” w x 6” d x 4” h Rectangular welded Aluminum Vacuum Chamber and a direct powered RF electrode. Applications include medical devices, solar cells, printed circuit boards,

• Coating System Type: Laboratory / Benchtop
• Features: Integral Process Controller?
• Materials Processed (Deposit or Substrate): Metal, Compound Semiconductors / GaAs, Tungsten / Refractory Metal, Other
• Technology / Process: Plasma Etching / Cleaning

Description: facility contains processing equipment capable of volume manufacturing yet flexible enough to accommodate wafer sizes from 50mm to 200mm. We offer full Device Fabrication and Design services along with a variety of individual processes to support our growing network of satisfied customers

• Application: Aerospace / Defense, Biotechnology / Medical, Automotive, Computer / PC, Fiber Optics / Telecommunications, Imaging / Vision, Wireless
• Device Type: Analog, ASIC , High Voltage, Logic, Memory, Microprocessor, Oscillator / Transistor-Oscillator (TO), Passive Components, Power Electronics, Sensors, Specialty / Other
• Device Voltage: 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3 V, 3.3 V, 5 V, Other
• Location: North America, United States Only, Northwest US Only

Description: length GaAs pHEMT process. The process features full passivation for performance and reliability. This die features SnAg(3.5%)Cu(1%) solder bumps for Wafer Level Chip Scale Package (WLCSP) applications.

• Actuator Type: Other
• Frequency Range: 1000 to 4000 MHz
• Insertion Loss: 0.5000 dB
• Isolation (Port to Port): 24 dB

Description: The Proline Promag 5DBB50-CPAMBJA0D3A1Z GAA1 from Endress+Hauser is a magnetic-inductive flow meter for use in limited space, particularly in the water and sewage industry. The highly cost-effective wafer flow meter Promag D10 with modern transmitter design with Bluetooth interface is

• Liquid Volumetric Flow Rate: 10 to 300 GPM
• Interface Options: Other
• Media Temperature Range: 32 to 140 F
• Operating Pressure: 16 psi

Description: The Proline Promag 5DBB40-CPAMBJA0D3A1Z GAA1 from Endress+Hauser is a magnetic-inductive flow meter for use in limited space, particularly in the water and sewage industry. The highly cost-effective wafer flow meter Promag D10 with modern transmitter design with Bluetooth interface is

• Liquid Volumetric Flow Rate: 7 to 190 GPM
• Interface Options: Other
• Media Temperature Range: 32 to 140 F
• Operating Pressure: 16 psi

Description: The Proline Promag 5DBB80-CPAMBJA0D3A1Z GAA1 from Endress+Hauser is a magnetic-inductive flow meter for use in limited space, particularly in the water and sewage industry. The highly cost-effective wafer flow meter Promag D10 with modern transmitter design with Bluetooth interface is

• Liquid Volumetric Flow Rate: 24 to 800 GPM
• Interface Options: Other
• Media Temperature Range: 32 to 140 F
• Operating Pressure: 16 psi

Description: The Proline Promag 5DBB25-CPAMBJA0D3A1Z GAA1 from Endress+Hauser is a magnetic-inductive flow meter for use in limited space, particularly in the water and sewage industry. The highly cost-effective wafer flow meter Promag D10 with modern transmitter design with Bluetooth interface is

• Liquid Volumetric Flow Rate: 2.5 to 80 GPM
• Interface Options: Other
• Media Temperature Range: 32 to 140 F
• Operating Pressure: 16 psi

Description: . Several polishing compounds available are Polipla, Glanzox, Insec. All polishing compounds are non-toxic & non-hazardous. Applications: Plastic Lens, Silicon Wafers, GGG, GaAs Transistors IC

Description: device is manufactured in 0.15 µm GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The part is well suited for Radar and Communications applications.

• Amplifier Type: Power Amplifier
• Frequency Range: 32000 to 38000 MHz
• Maximum Gain: 18 dB
• Package Type: Other

Description: poromeric structure helps to produce exact surface finishes. All pads are offered with adhesive backing which simplifies its fixing and removal. Sizes: 305mm to 1400mm diameters Applications: Silicon Wafer, Glass, Plastic, Ceramics, GaAs, Quartz, Metal Parts etc.

Description: specially developed for temporary bonding applications, most typically associated with GaAs and silicon wafer thinning. It can also be used for various applications where temporary adhesion is necessary. This adhesive can be easily debonded in isopropyl alcohol (IPA). Fast Bonding

• Cure Type / Technology: Thermoplastic / Hot Melt
• Industry: Aerospace, Electronics, Medical / Food (Sanitary / FDA), Semiconductors / IC Packaging

Description: -chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5 µm GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1042-QT

• Amplifier Type: Power Amplifier
• Frequency Range: 12000 to 16000 MHz
• Maximum Gain: 21 dB
• Maximum Operating Voltage: 5 volts

Description: -chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5 µm GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1042-QT

• Amplifier Type: Power Amplifier
• Frequency Range: 12000 to 16000 MHz
• Maximum Gain: 21 dB
• Maximum Operating Voltage: 5 volts

Description: Features: Frequency Range: 0.25 — 2.5 GHz Matching Range: Minimum: 15:1; Typical: 40:1 Power Capability: 250 W CW; 2.5 kW PEP Optimized for GSM/EDGE, WCDMA, WiFi and WiMax In-Fixture and On-Wafer Applications High matching Range for GaN, GaAs

Description: is extremely stable and can be used with complex multi-layer films. Two types of lasers are available and compatible with a broad range of films including SiN, SiO2, GaAs, InP, AlGaAs, and GaN. This system consists of a compact interference measurement section that