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  • Microwave RF: GaN Devices Raising the Output-Power Performance Bar
    Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
  • RF Power: GaN Moves In for the Kill
    papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
  • Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
    The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
  • Eutectic Die-Attach of GaN and GaAs MMICs
    The latest GaN and GaAs circuit chips (die) are providing higher power levels than previous solid-state technologies. These new-generation devices require incredible precision and consistency throughout the die-attach and assembly process to ensure that the thermal flux from these devices
  • Eliminating EMC By Replacing A MOSFET With A GaN Transistor
    It is not unusual for a design already in production to end up back with the engineering development team. In this case, the product is a 3-kW power conversion unit with a standard boost PFC that needed rework for it to comply with tighter EMI specifications. The manufacturing company involved
  • Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
    Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
  • Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
    Semiconductor losses and their potential for further improvement: This paper compares latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs
  • How Copper Clip Makes Perfect Packages for the Future of Power
    We shipped more than 1.7 billion LFPAK devices in 2021, including MOSFETs and bipolar power transistors in LFPAK56 and its later derivatives from small size of 3 mm x 3 mm LFPAK33 to 8 mm x 8 mm LFPAK88. With the new CCPAK1212 now adding to the copper clip success story, we expect this technology