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Supplier: Richardson RFPD
Description: optimizes the power flow and simplifies the PCB board layout. ISG3201 employs independent high-side and low-side PWM input, which are usually available from most of GaN controllers. The ISG3201 is available in a compact 5mmx6.5mmx1.12mm LGA package. Features 2x 100V, 3.2mohm Emode
- Features: Other
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Supplier: Richardson RFPD
Description: for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications. Features Four GS61004B GaN transistors and two PE29102 E-HEMT drivers GaN transistors operable
- Category: Development Board
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Supplier: MACOM
Description: MACOM is the world’s only provider of GaN on Si technology for RF applications. We offer a broad range of continuous wave (CW) GaN on Si RF power transistor products as discrete devices and modules designed to operate from DC to 6 GHz. Our high power CW and linear
- Power Gain: 9 to 20 dB
- Output Power: 4 to 500 watts
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: MACOM
Description: At MACOM we offer a broad range of pulsed and linear RF power transistor products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power transistors are ideal for civil avionics, communications, networks, radar, and industrial,
- Power Gain: 11 to 14 dB
- Output Power: 18 to 45 watts
- Operating Frequency: 0 to 4,000 MHz
- Transistor Grade / Operating Range: Commercial, Industrial
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Supplier: Infineon Technologies AG
Description: The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS66516T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516T-TR is a top-side cooled transistor in a GaNPX® package with very low
- Features: Other
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Supplier: Infineon Technologies AG
Description: The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low
- Features: Other
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Supplier: Integra Technologies, Inc.
Description: IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB
- Power Gain: 12.5 dB
- Output Power: 100 watts
- Operating Frequency: 100 to 1,000 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 160W @ 100us/10%/50V ■ 420 to 450 Operating Frequency ■ Internal Input Impedance Pre-matched Device ■ No Internal Output Match for Efficiency Optimization ■ Depletion Mode Device - Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use
- Power Gain: 22 dB
- Output Power: 160 watts
- Operating Frequency: 420 to 450 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Qorvo
Description: The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain
- Power Gain: 12.1 dB
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: GAN041-650WSB/SOT429/TO-247 Product overview: GAN041-650WSBQ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- V(BR)DSS: 650 volts
- PD: 187 milliwatts
- TJ: -55 to 175 C
- Features: Enhancement, Other
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Supplier: Qorvo
Description: the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0020 can also be used as a driver in a macrocell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and
- Power Gain: 18.8 dB
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Qorvo
Description: the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a microcell base station power amplifier. The device is housed in an industry-standard 4 x 3 mm surface mount QFN package. Lead-free and
- Power Gain: 22.3 dB
- Operating Frequency: 0 to 5,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Infineon Technologies AG
Description: The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN
- Features: Other
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Supplier: Integra Technologies, Inc.
Description: IGN2729M400 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 2.9 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 400
- Power Gain: 11 dB
- Output Power: 400 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Wolfspeed
Description: 50-W; 5200 – 5900-MHz; 28 V; GaN MMIC for Radar Power Amplifiers Cree’s CMPA5259050 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency; high gain; and wide bandwidth capabilities; which makes CMPA5259050 ideal for
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Supplier: Qorvo
Description: Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio
- Power Gain: 15.5 dB
- Operating Frequency: 0 to 6,000 MHz
- Transistor Grade / Operating Range: Military
- Features: Other
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Supplier: Newark, An Avnet Company
Description: Airfast RF Power GaN Transistor, 2496-2690 MHz, 34 W Avg., 48 V / REEL RoHS Compliant: Yes
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 25 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 10 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Newark, An Avnet Company
Description: Airfast RF Power GaN Transistor, 3300 3700 MHz, 15.1 W Avg., 48 V / REEL RoHS Compliant: Yes
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40045 is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Output Power: 45 watts
- Operating Frequency: 4,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: 650 V, 80 MOHM GALLIUM NITRIDE ( Product overview: GAN080-650EBEZ from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- V(BR)DSS: 650 volts
- PD: 188 milliwatts
- TJ: -55 to 150 C
- Features: Enhancement, Other
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Supplier: Solid State Devices, Inc.
Description: FEATURES: 4th Generation Gallium Nitride Technology Exceptionally Low RDSon Low Qg Simplifies Gate Drive Circuit Very Fast Switching for High-Freq. Applications Low Thermal Resistance Hermetically Sealed Package Available in Hermetically Sealed, Chip-Scale Package (SMG.3-1) – Consult Factory TX,
- V(BR)DSS: 100 volts
- rDS(on): 0.008 ohms
- IDSS: 0.1 to 0.6 milliamps
- QG: 12 to 14.999999999999998 nC
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Supplier: MACOM
Description: The MABC-001000-DP000L is a bias control module that provides proper gate voltage and pulsed drain voltage biasing for GaN on SiC, GaN on Si, or GaAs RF power transistors or modules utilizing depletion mode semiconductor technology.
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Supplier: Win Source Electronics
Description: Win Source Part Number: 1349696-GAN041-650WSBQ Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Package: Tube Standard Package: 30 Technology: GaNFET (Cascode Gallium Nitride FET) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V
- Polarity: N-Channel
- Package Type: SOT3, TO-247
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Supplier: Mini-Circuits
Description: Mini-Circuits’ ZHL-50W-GAN+ and ZHL-50W-GANX+ are Class A, high power amplifiers that utilize a Gallium Nitride (GaN) push-pull output stage, which results in a higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts. These amplifiers provide 50 W
- Frequency Range: 20 to 500 MHz
- Minimum Gain: 1.2 dB
- Maximum Gain: 1.2 dB
- Output Power( P1dB): 46.2 to 48 dBm
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Supplier: Nexperia B.V.
Description: The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Description: IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can
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Supplier: CoorsTek
Description: Next-generation power electronics substrate As silicon-based power devices reach their physical limits, Gallium Nitride (GaN) is the material of choice for the power electronics industry. GaN is replacing Silicon (Si) for more energy-efficient, smaller, cooler, and
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Supplier: Nexperia B.V.
Description: The GAN111-650WSB is a 650 V, 97 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features and
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Supplier: Nexperia B.V.
Description: The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features and
- Transistor Grade / Operating Range: Industrial
- Features: Other
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Supplier: Nexperia B.V.
Description: body diode Low gate charge, low output charge Qualified for standard applications ESD protection RoHS, Pb-free, REACH-compliant High efficiency and high power density Low package inductance and low package resistance Applications High power density and high efficiency power
- Features: Other
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Supplier: VAST STOCK CO., LIMITED
Description: RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V
- Transistor Type: MOSFET
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Supplier: ODG (Origin Data Global)
Description: AIRFAST RF POWER GAN TRANSISTOR,
- Power Gain: 14.2 dB
- Operating Frequency: 2,496 to 2,690 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
- Features: Other
Find Suppliers by Category Top
Featured Products Top
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STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can (read more)
Browse Gate Drivers Datasheets for DigiKey -
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 6 x 5mm leadless SMT package that saves real estate of already space-constrained handheld radios. (read more)
Browse RF Transistors Datasheets for Qorvo -
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. Input pre-match within the package results in ease of external board match and (read more)
Browse RF Transistors Datasheets for Qorvo -
Family of RF Power Macro GaN Transistors from NXP (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
The Analog Devices LTC7893 synchronous boost controller drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100 V. The LTC7893 solves many of the challenges traditionally faced when using GaN (read more)
Browse IC Switching Voltage Regulators Datasheets for DigiKey -
available RF Power Amplifier product portfolio for wireless infrastructure that spans multiple levels of integration, including; discrete transistors, multistage IC’s, and multi-chip modules (MCM), as well as leveraging GaN and Silicon LDMOS from the latest cutting edge NXP fabs (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD
Conduct Research Top
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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RF Power: GaN Moves In for the Kill
papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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Eutectic Die-Attach of GaN and GaAs MMICs
The latest GaN and GaAs circuit chips (die) are providing higher power levels than previous solid-state technologies. These new-generation devices require incredible precision and consistency throughout the die-attach and assembly process to ensure that the thermal flux from these devices
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Eliminating EMC By Replacing A MOSFET With A GaN Transistor
It is not unusual for a design already in production to end up back with the engineering development team. In this case, the product is a 3-kW power conversion unit with a standard boost PFC that needed rework for it to comply with tighter EMI specifications. The manufacturing company involved
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Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
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Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices
Semiconductor losses and their potential for further improvement: This paper compares latest generation Superjunction power transistors versus e-mode GaN HEMTs and SiC MOSFETs
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How Copper Clip Makes Perfect Packages for the Future of Power
We shipped more than 1.7 billion LFPAK devices in 2021, including MOSFETs and bipolar power transistors in LFPAK56 and its later derivatives from small size of 3 mm x 3 mm LFPAK33 to 8 mm x 8 mm LFPAK88. With the new CCPAK1212 now adding to the copper clip success story, we expect this technology