Products/Services for Gec Plessey Semiconductor Diodes
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Diodes - (1068 companies)A semiconductor diode is a non-linear device whose most outstanding feature is the fact that, basically, current is only allowed to flow in one direction. The diode is built by joining together two semiconductor materials...Diode TypeDiode ApplicationsRoHS Compliant -
Diode Arrays - (168 companies)Diode arrays are composed of multiple discrete (usually unconnected) diodes on a single silicon chip. Diode arrays are important semiconductor products because they save assembly time and improve reliability over individually packaged diodes... -
PIN Diodes - (93 companies)PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode... -
Schottky Diodes - (299 companies)Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity... -
Varactor Diodes - (73 companies)...to a semiconductor junction. Capacitance ratio (CDmin/CDmax) is the ratio of the minimum capacitance and the maximum capacitance. Smaller ratios indicate larger ranges of capacitance. Terminal capacitance or diode capacitance (CD) is the minimum capacitance when... -
RF Diodes - (93 companies)...electrode leadless face (MELF) - MELF packages for RF diodes include QuadroMELF, MicroMELF, and MiniMELF. Standards. MIL-PRF-19500/554 - Schottky barrier semiconductor diode. MIL-S-19500/333 - Varactor semiconductor diode. MIL-STD-35-54 - Tunnel...
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Zener Diodes - (247 companies)Zener diodes are PN junction devices that are designed to operate in the reverse-breakdown region. Description. Zener diodes are PN junction devices that are designed to operate in the reverse-breakdown region. The breakdown voltage (Vz) of Zener...
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Tunnel Diodes - (17 companies)Tunnel diodes are heavily doped P-N diodes in which electron tunneling from the conduction band in the N-type material to the valence band in the P-type region produces a region of negative resistance. This negative-resistance region is the most...
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Power Diodes - (85 companies)Power diodes are used mainly in high-power applications. They are built with large P-N junctions in order to pass large amounts of current and dissipate large amounts of heat. Power diodes can also withstand high voltage diodes when operated...
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General Purpose Diodes - (232 companies)Junction operating temperature (Tj) is the range of temperatures at which diode is designed to operate. Materials. General purpose diodes, also known as PN junction diodes, are composed of a crystalline semiconductor that is doped with N-type and P-type...
Product News
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ASAP Semiconductor LLC
Diodes types. LEDs produce light when the diode permits the transfer of electric current between the electrodes. These diodes release energy in the form of light when the diode is turned on and the electrons combine with the holes. The color of light it emits depends on the energy gap of the semiconductor and can produce wavelengths ranging from infrared to near ultraviolet. The next type, laser diodes, produce coherent light, making them different from an LED. A laser is formed when an LED-like... (read more) -
Win Source Electronics
1N4148W-7-F Diode by Diodes Incorporated The 1N4148W-7-F diode from Diodes Incorporated is a versatile and highly reliable component widely used in electronic circuits for its exceptional performance characteristics. Here are the key details: Manufacturer: Diodes Incorporated. Part Number: 1N4148W-7-F. Category: Discrete Semiconductor Products, Diodes, Rectifiers - Single. Description: General-purpose diode, designed for high-speed switching applications. Package: SOD-123 (Surface-Mount Device). Features: Voltage - DC Reverse (Vr... (read more)Browse Diodes Datasheets for Win Source Electronics -
Win Source Electronics
BAT54CLT1G Schottky Diode Diode Configuration: Contains two diodes in series, providing design flexibility for various circuit topologies. Applications: DC/DC Converters. Power Management Functions. Voltage Clamping. Protection Circuits. Switching Power Supplies. Reverse Polarity Protection. High-Frequency Inverters. Long Description: The BAT54CLT1G from ON Semiconductor is a highly efficient Schottky barrier diode, renowned for its fast switching characteristics and minimal forward voltage drop. This small-signal diode... (read more)Browse Diodes Datasheets for Win Source Electronics -
SHENZHEN VICTORS INDUSTRIAL CO., LTD.
150V 6000A Semiconductor Protection Fuse Key Electrical Parameters for Selection. Rated Voltage: 150V AC/DC for low-voltage semiconductor circuits. Rated Current: 70A - 6000A wide range for scalable system protection. Interrupt Rating: 20kA DC, ensuring safe disconnection under high fault currents. Operating Class: aR / gR, optimized for semiconductor protection (partial/full range). Optimized for Semiconductor Protection. Ultra-Fast Fault Response: Designed to protect diodes, SCRs, and power semiconductors from short-circuit damage... (read more)Browse Fuses Datasheets for SHENZHEN VICTORS INDUSTRIAL CO., LTD. -
Micross Components, Inc.
Semiconductor Obsolescence: EOL/DMSMS Sustainment EOL/DMSMS Sustainment: Securing & Reinforcing Hi-Rel Electronics Supply Chains. Semiconductor technology moves so fast that many devices reach their end of life (EOL) within a few years due to Diminishing Manufacturing Sources (DMS) or Diminishing Manufacturing Sources and Material Shortages (DMSMS), either because demand is falling or they have been replaced by improved devices with additional features and specifications. However, the new devices often are not pin-to-pin, spec-to-spec... (read more)Browse Diodes Datasheets for Micross Components, Inc. -
Fuji Electric Corp. of America
Semiconductor Applications Semiconductors play a critical role in the fabrication of electronic devices, making them an important part of our everyday lives. Over the past 50 years, advancements in semiconductor technology have helped make electronic devices smaller, faster, and more reliable. Fuji Electric is proud to be at the forefront of these innovations, offering high-performance power semiconductors for energy, automotive, information technology, home appliances, and industrial manufacturing applications. Check... (read more)Browse Insulated Gate Bipolar Transistors (IGBT) Datasheets for Fuji Electric Corp. of America -
Summit Interconnect
Semiconductor ATE Automated Test Equipment (ATE) boards are used for testing highly complex semiconductor chips. ATE board designs are typically highly complexity with an emphasis on high performance, The boards have an extremely high-layer count (40 to 60 ). Specialized testing. Summit is a leading supplier of PCBs to the semiconductor ATE market. These board provide customers with the ability to efficiently test portions of their design in less time with improved reliability. At Summit, we have the extensive... (read more) -
Win Source Electronics
MBRA340T3G Schottky Diode – 40V, 3A The MBRA340T3G Schottky diode from ON Semiconductor is engineered to deliver efficient performance in high-demand applications. With a reverse voltage rating of 40V and an average rectified current of 3A, this diode ensures robust operation in power management systems, industrial machinery, consumer electronics, automotive, and portable devices. Its low forward voltage drop of 450mV @ 3A minimizes energy loss, making it highly effective in energy-sensitive designs. Engineers can trust... (read more)Browse Diodes Datasheets for Win Source Electronics -
SHENZHEN VICTORS INDUSTRIAL CO., LTD.
1000VDC Semiconductor Protection Fuse VSP Vicfuse cRUus, and RoHS compliant. Operating temperature: -40 C to +125 C. Storage temperature: -40 C to +70 C, humidity 5 -70%. Typical Applications. IGBT module protection. Rectifiers and diode protection. Inverters and DC drives. UPS systems. Reduced voltage motor starters. Industrial power electronics. Semiconductor modules in renewable energy systems. Industrial Advantages. Reliable fast-acting protection for sensitive semiconductors. Low let-through energy protects downstream equipment. High... (read more)Browse Circuit Protection Components Datasheets for SHENZHEN VICTORS INDUSTRIAL CO., LTD. -
Nexperia B.V.
Nexperia Bolsters its Range of CFP Power Diodes The latest additions include 32 planar Schottky diodes and eight hyperfast recovery rectifiers housed in the CFP15B package. They are available as standard and Q-types that meet AEC-Q101 automotive qualification standards. By bringing multiple versions of these devices to the market Nexperia underscores its commitment to expanded manufacturing capacity and accelerated transition to smaller, thermally optimized packages. Nexperia offers engineers access to one of the most extensive CFP packaged... (read more)Browse Diodes Datasheets for Nexperia B.V.
More Information
Indicates content that may require registration and/or purchase.
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Novel Implementation of Broadband Detector
A GEC Plessey Semiconductors chip device was chosen for the diode .
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Optimisation of local lifetime control in high power diode
These results have been partly used in developing the 3.3kV Trench IGBTs and diodes with Dynex Semiconductors (formerly known as Mite1 and GEC Plessey ).
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Monte Carlo modelling of multiple-transit-region Gunn diodes
Theory Tech. 46 739–46 [4] Teng S J J and Goldwasser R E 1989 High-performance second-harmonic operation W-band GaAs Gunn diodes IEEE Electron Device Lett. 10 412–4 [5] GEC Plessey Semiconductors Microwave Products Handbook February 1994 pp 192–3…
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Freewheeling diode reverse-recovery failure modes in IGBT applications
He was with the Power Development Group, GEC Plessey Semiconductors , U.K. (currently Dynex Power Semiconductors), where he was mainly responsible for the design and development of a whole range of fast-recovery diodes for IGBT and GTO applications.
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A comparison of planar doped barrier diode performance versus Schottky diode performance in a single balanced, MIC mixer with low LO drive
The MMW GaAs Schottky bamer beam lead diode used in the balanced mixer circuit is manufactured by .... The MMW GaAs PDB beam lead device is produced by GEC Plessey Semiconductor ; part number DC1822.
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Millimeter wave applications and technology trends
Preferrably this should be done electronically, Figure 22 shows a design pro- posed by GEc - Plessey - Semiconductors of Lincoln, UK [41]. .... The receiver antenna can be scanned electronically by sequential switching employing PiN- diodes .
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Automotive Millimeterwave Radar History and present Status
Preferably this should be done electronically, fig. 7 shows a design proposed by GEC - Plessey - Semiconductors of Lincoln, UK [10]. .... The receiver antenna can be scanned electronically by sequentially switching the 3 employed PUN- diodes .
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MCM-D and direct module attach for RF applications
…the use of GaAs MMICs, silicon bipolar and CMOS ICs, discrete transistors and diodes and a full .... As part of a European collaborative development project entitled Technological Solutions for Wireless Communications Subsystems (TWiCS) [11, GEC Plessey Semiconductors have been applying .
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Contents
'Soft reverse recovery power diodes diffused with Iridium' V Benda, M Cernik and D Stepkova Czech Technical .... 'Thyristors revisited -the role of improved performanceand design in modern applications' C J Smith GEC Plessey Semiconductors , UK .
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Asymmetric superlattices for microwave detection
GEC - Plessey Semiconductors (MEDL), Doddington Road, Lincoln, LN6 3LF, U.K. .... Resonant tunneling diodes with asymmetric current-voltage characteristics offer the possibility of producing microwave detectors.
