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Supplier: Infineon Technologies AG
Description: Hermetically sealed Ceramic package Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller
- Package Type: Other
- Polarity: P-Channel, Other
- QG: 200 nC
- V(BR)DSS: -100 volts
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Supplier: Infineon Technologies AG
Description: tolerant Hermetically sealed Ceramic package Light weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power
- Package Type: Other
- Polarity: P-Channel, Other
- QG: 200 nC
- V(BR)DSS: -100 volts
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Supplier: Infineon Technologies AG
Description: Rad hard, -100V, -2.6A, single, P-channel MOSFET, R5 in a TO-205AF package - TO-205AF, 100 krad(Si) TID, COTS Features Single Event Effect (SEE) Hardened Ultra Low RDS(on) Identical Pre- and Post-Electrical Test Conditions Repetitive
- Package Type: Other
- Polarity: P-Channel, Other
- QG: 11 nC
- V(BR)DSS: -100 volts
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Supplier: Infineon Technologies AG
Description: Requirements Hermetically Sealed Ceramic package Light weight ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power
- Package Type: Other
- Polarity: P-Channel, Other
- QG: 45 nC
- V(BR)DSS: -100 volts
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Supplier: Richardson RFPD
Description: Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: The MCP1406/07 devices are a family of buffers/MOSFET drivers that feature a single-output with 6A peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. These devices are pin-compatible and are improved versions of the
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The MCP1406/07 devices are a family of buffers/MOSFET drivers that feature a single-output with 6A peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. These devices are pin-compatible and are improved versions of the
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The MCP1403/4/5 devices are a family of 4.5A,dual output buffers/MOSFET drivers. As MOSFET drivers, the MCP1403/4/5 can easily charge 2200 pF gate capacitance in under 28 nsec (max).The inputs are TTL/CMOS compatible and provide 300 mV of hysteresis between the high and low
- Transistor Type: MOSFET
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Supplier: Renesas Electronics Corporation
Description: medium to high current applications.The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this
- Features: Input Overcurrent Protection
- IC Package Type: Other
- Input Voltage (VIN): 5 to 12 volts
- Output Voltage (Volt): 0.6000 to 2.3 volts
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Supplier: Renesas Electronics Corporation
Description: medium to high current applications. The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this
- Features: Input Overcurrent Protection
- IC Package Type: Other
- Input Voltage (VIN): 5 to 12 volts
- Output Voltage (Volt): 0.6000 to 2.3 volts
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Supplier: Renesas Electronics Corporation
Description: medium to high current applications.The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this
- Features: Input Overcurrent Protection
- IC Package Type: Other
- Input Voltage (VIN): 5 to 12 volts
- Output Voltage (Volt): 0.6000 to 2.3 volts
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Supplier: SAE International
Description: of a vehicle. The power module contains sixteen state-of-the-art 900V SiC Trench MOSFET devices developed by ROHM Co., Ltd., and features an ultra-low on resistance (~1.5 mOhm per switch position), extremely fast switching speeds (in the 10s of nanoseconds), and low switching energies.
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Supplier: ROHM Semiconductor GmbH
Description: BD2265G-M is low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start.
- IC Package Type: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: BD2262G-M is low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start.
- IC Package Type: Other
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Supplier: Broadcom Inc.
Description: This family of gate drive optocouplers have a GaAsP LED. The LED is optically coupled to an integrated circuit with a power stage. These optocouplers are ideally suited for high frequency driving of power IGBT and MOSFETs used in Plasma Display Panels, high
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1181 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -40 to 125 C
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Supplier: ASAP Semiconductor LLC
Description: EVAL MODULE FOR TPS2490-001 Power Management Hot Swap Controller No TPS2490 High Side MOSFET Driver Inrush Current Limiting
- Category: Development Board
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Supplier: ROHM Semiconductor GmbH
Description: MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
- IDSS: -25000 milliamps
- PD: 50000 milliwatts
- Package Type: Other
- Packing Method: Tape Reel
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Supplier: ROHM Semiconductor USA, LLC
Description: S2305 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors
- IDSS: 10000 milliamps
- TJ: -55 to 175 C
- Transistor Grade / Operating Range: Commercial
- V(BR)DSS: 1200 volts
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Supplier: Semikron, Inc.
Description: MOSFET Modules - Best in class switching performance SEMIKRON produces MOSFET (Metal Oxide Semiconductor Field Effect Transistor) modules in single switch, halfbridge, H-bridge and 6 PACK configuration in SEMITOP and SEMITRANS packages.The available MOSFET modules in the voltage
- Configuration: Half-Bridge, H-Bridge
- Output Current: 80 to 335 amps
- Output Voltage: 100 to 200 volts
- Technology: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: S2301 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: ValueTronics International, Inc.
Description: The TCP303 is a Current Probe from Tektronix. Current Probes are an integral part of any electrical power testing toolbox to ensure accurate measurements, reliability, and safety. Purchase a current probe set with your oscilloscope. Probes can use pulse waveforms to test
- Bandwidth: 15 MHz
- Probe Type: Current
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Supplier: Renesas Electronics Corporation
Description: The EL7104 is a matched driver IC that improves the operation of the industry-standard TC-4420/29 clock drivers. The Elantec version is a very high speed driver capable of delivering peak currents of 1A into highly capacitive loads. The high speed performance is achieved by
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Supplier: ROHM Semiconductor GmbH
Description: BD18353EFV-M/MUF-M is a 1ch LED Controller. High side current detection amplifier is built-in. PWM dimming duty can be freely set with built-in PWM generation circuit. PWM dimming realizes by driving an external P-ch MOSFET. Outputs abnormal LED status to the FAULT_B pin. Two
- Features: RoHS Compliant
- Form Factor: Integrated Circuit (IC)
- Input Voltage: 5 to 65 volts
- Number of Channels: 1 #
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Supplier: Wolfspeed
Description: die can be configured in parallel to achieve higher current handling capability or can be connected in series to achieve higher blocking capability. Unlike silicon MOSFETs, Wolfspeed C3M SiC MOSFETs include a fast intrinsic diode with low reverse recovery (Qrr) – eliminating the
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: SCHURTER Inc
Description: Description Patented surface mount thermal fuse to protect against thermal runaway of power semiconductors such as: MOSFET's, IC's, IGBT's, Triac's, SCR's, etc. Highest reliability thanks to complete galvanic Separation. Unique Selling Proposition
- Case Style: Other
- DC Voltage: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
- IDSS: 115 milliamps
- PD: 225 milliwatts
- Package Type: SOT23, Other
- Packing Method: Tape Reel
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Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 1163535-CSD19532Q5B Series: NexFET Packaging: Reel - TR Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id
- PD: 3100 to 195000 milliwatts
- Package Type: SOT3
- Packing Method: Tape Reel, Other
- QG: 62 nC
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5800/5801 are optocoupled non-inverting drivers for power Metal Oxide Semiconductor/Silico n Field-Effect Transistor (MOSFET) loads at high-switching speeds where electrical isolation is required. The OLH5801 is a 100% high-reliability screened version of the
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Adam Tech’s HCT Series High Current Terminals are designed for reliable, high-current connections between wires and PCBs, supporting up to 250A. Made from C3604 brass or phosphor bronze with matte tin or tin plating, they provide excellent conductivity and corrosion resistance. Press (read more)
Browse Power Connectors Datasheets for New Yorker Electronics Co., Inc. -
More than customization, you would be highly impressed by how we make it more efficient for you by one-stop service: [Market & Application] - BESS - Power System - Charing Pile - UPS system (read more)
Browse Power Connectors Datasheets for Rego Electronics Inc. -
end equipment comes a greater need for protection. E-Fuse, enabled by Microchip's 700V and 1200V Silicon Carbide (SiC) technology, provides a faster, more reliable method for protecting power electronic applications. E-Fuse solutions can detect and interrupt fault currents microseconds (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
These high voltage supplies may be used as constant voltage or constant current sources. They may be remotely programmed by means of either voltage or resistance, and have provisions for remote monitoring and output inhibiting. Outputs are arc/short circuit protected (read more)
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Harwin Kona datasheet Kona High Reliability High Current Connectors For applications that must not fail, Kona brings high-reliability power connection at 8 (read more)
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onsemi's NCV84120 is a fully protected single-channel high-side driver that can be used to switch various loads, such as bulbs, solenoids, and other actuators. The device incorporates advanced protection features such as active inrush current management, overtemperature shutdown (read more)
Browse Power Transformers Datasheets for DigiKey -
low DC resistance and ultra-low AC losses for greater power converter efficiency at high frequencies (2 to 5 MHz) and high ripple current. XEL40xxV Family inductors measure just 4.0 x 4.0 mm with a maximum height of 3.2 mm and feature a rugged, composite construction that provides magnetic (read more)
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Regulation Light Weight Voltage and Current Programming Voltage and Current Monitoring Low Ripple Other standard HV power supplies include (read more)
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Voltage: 40 V to 220 V Current: 2.72A to 20A 2μ second shunt switching recovery Peak Power Tracking (read more)
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High Voltage AC-DC (6-Day Power Supply) Modular Regulated Power Supplies Output ranges: 0-1,000 volts to 0-30,000 volts Shipped Within 6 Days Five Year Warranty (internal encapsulated multiplier module - One Year) These modular (read more)
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Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
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Low Current MOSFET Balances High Value than 1000 Farads
a device designed for a few milliamps of power is quite sufficient for even high-value, high-current supercapacitors.
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Universal Power MOSFET Interface IC (TC4420/9)
current, and logic inputs that can withstand up to 5V negative swings. Although designed as a power MOSFET driver, it can act as a level shifter, comparator, waveshaper and pulse transformer driver, to mention a few of its possible uses.
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Application: Reed Relays in Pulsed High Current Testing
When testing discrete semiconductors, particularly power devices (Fets, mosfets, etc), high current testing is a very important factor. The high currents allow the designer to determine the integrity of the chip and to make sure it is properly placed on its substrate for efficient operation.
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Using Low Resistance MOSFETs as Load Switches
a resistor and therefore Ohms law applies; when turned off, the MOSFET appears as a diode and as such blocks current in one direction with a very high resistance (if reverse protection is required, an additional MOSFET or blocking diode is required). P-channel MOSFETs are normally used
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How to Choose Power FETs for ORing MOSFET Controllers
Using ORing controllers and power FETs in place of ORing power diodes can minimize power loss in high-current power distribution systems. This article discusses key selection steps for choosing power FETs, and provides design tips to ensure engineers meet their target specifications when developing
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Soft-Start Controller For Switching Power Supplies
driven by the power supply is capacitive, the problem is exaggerated due to the large transient currents required to charge the capacitive load. In extreme instances, the repeated high stress of start-up can result in catastrophic failures in the driver section, typically, the power MOSFET transistors
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Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
The demand for portable low cost welding machines, especially in developing countries, is increasing. In the Manual Metal Arc and Tungsten Inergt Gas types, in power range from 1,5kW up to 5kW, discrete IGBTs and MOSFETs are broadly used. Mostly, these machines use hard switching current mode PWM
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Electronic components
Now the switches for average voltages can with to be integrated into the comparison to the lateral MOSFET of higher current load capacity.
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Electronics for engineers and natural scientists
Thereby, the drain current flows through the mostly large-scale drain connection, several source connections can high current - MOSFET .
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Voltage Regulators for Next Generation Microprocessors
The empirical model from [5] aims at representing the reverse recovery of high current power MOSFETs .
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IXYS Introduces New Power MOSFETs
Santa Clara, CA - IXYS Corporation recently announced the release of a new line of High Current Power MOSFETs in versions ranging from 55V to 100V, utilizing IXYS' MOSFET non-planar technology (Trench, suffix T), to provide high efficiency in power management circuits…
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The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs
In 2001, he joined Philips Semiconductors, U.K., as a Senior Development Engineer in the Automo- tive Advanced Power Development Group, where he was the Principal Investigator for the power MOSFET avalanche phenomenon and high current power MOSFET activities for automotive applications.
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Linear Drives for Industry Applications IX
Full-bridge inverter circuit uses UTC 8N60 as power device, it is a high voltage and high current power MOSFET .
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The impact of SiGe BiCMOS on cellular handset integration
These control and regulation functions require higher voltage, higher current power MOSFETs as well as CMOS for digital control circuits.
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Table of Contents
Measurement Technique for the Static Output Characterisation of High Current Power MOSFETs .