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Supplier: Microchip Technology, Inc.
Description: The MCP1406/07 devices are a family of buffers/MOSFET drivers that feature a single-output with 6A peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. These devices are pin-compatible and are improved versions of the
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redudant power distribution Load switch Battery charging Similar Parts IRH9150SCV Screening Level TXV
- V(BR)DSS: -100 volts
- QG: 199.99999999999997 nC
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
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Supplier: Infineon Technologies AG
Description: mount ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redudant power distribution Load switch Battery charging Battery management
- V(BR)DSS: -200 volts
- QG: 45 nC
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
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Supplier: Infineon Technologies AG
Description: Hermetically Sealed ESD Rating: Class 1B per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging
- V(BR)DSS: -100 volts
- QG: 10.999999999999998 nC
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
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Supplier: Infineon Technologies AG
Description: per MIL-STD-750, Method 1020 Potential Applications DC-DC converter Motor drives Inrush current protection Solid state power controller Thermal management Active ORing circuits Redundant power distribution Load switch Battery charging Battery management system Slash Sheet
- V(BR)DSS: -100 volts
- QG: 45 nC
- Features: MOSFET, Other, Power MOSFET
- Polarity: P-Channel
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Supplier: Microchip Technology, Inc.
Description: it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 4.5A (typ) Independent Enable Function for each Driver Low Shoot-Through/Cross-Conduction Current in output Stage Wide input supply Operating Range:
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: it to be driven from slow rising and falling signals and provide noise immunity. Additional Features High peak output Current: 4.5A (typ) Low Shoot-Through/Cross-Conduction Current in output Stage Wide input supply Operating Range: 4.5V to 18V High Capacitive Load drive
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT).The TC4423A/4424A/4425A have matched leading and falling-edge
- Features: MOSFET
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Supplier: Richardson RFPD
Description: Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
- rDS(on): 0.09 ohms
- Features: MOSFET, Other, Power MOSFET
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Supplier: SAE International
Description: The demands for high-performance power electronics systems are rapidly surpassing the power density, efficiency, and reliability limitations defined by the intrinsic properties of silicon (Si)-based semiconductors. The advantages of silicon carbide (SiC) are well known,
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Supplier: Renesas Electronics Corporation
Description: The ISL89410, ISL89411, ISL89412 ICs are similar to the EL7202, EL7212, EL7222 series but with greater VDD ratings. These are very high speed matched dual drivers capable of delivering peak currents of 2.0A into highly capacitive loads. The high speed performance is achieved by
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5800/5801 are optocoupled non-inverting drivers for power Metal Oxide Semiconductor/Silicon Field-Effect Transistor (MOSFET) loads at high-switching speeds where electrical isolation is required. The OLH5801 is a 100% high-reliability screened version of the
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Supplier: ROHM Semiconductor GmbH
Description: MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
- V(BR)DSS: -100 volts
- IDSS: -25,000 milliamps
- QG: 59.99999999999999 nC
- PD: 50,000 milliwatts
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C Ultra fast switching for operation at less than 100kHz High voltage: 500 V for off-line SMPS High current: 9 A for up to 350 W SMPS The NTE2393 is an N-channel enhancement mode
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Supplier: Broadcom Inc.
Description: This family of gate drive optocouplers have a GaAsP LED. The LED is optically coupled to an integrated circuit with a power stage. These optocouplers are ideally suited for high frequency driving of power IGBT and MOSFETs used in Plasma Display Panels, high
- Isolation Voltage: 1,181 volts
- Rise Time: 0.025 µs
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 125 C
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Supplier: Renesas Electronics Corporation
Description: to high current applications.The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this integration
- Output Voltage (Volt): 0.6 to 2.3 volts
- Input Voltage (VIN): 5 to 12 volts
- Features: Input Overcurrent Protection, Other
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Supplier: Renesas Electronics Corporation
Description: to high current applications. The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this integration
- Output Voltage (Volt): 0.6 to 2.3 volts
- Input Voltage (VIN): 5 to 12 volts
- Features: Input Overcurrent Protection, Other
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Supplier: Skyworks Solutions, Inc.
Description: The OLI580 is an optocoupled non-inverting power Metal Oxide Semiconductor/Silicon Field-Effect Transistor (MOSFET) driver for the hybrid assembly of switching loads where electrical isolation is required. Each unit consists of an LED that is optically coupled to a Bi-polar
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Supplier: ROHM Semiconductor USA, LLC
Description: S4001 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- V(BR)DSS: 650 volts
- rDS(on): 0.03 ohms
- IDSS: 70,000 milliamps
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor USA, LLC
Description: S2308 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.
- V(BR)DSS: 1,200 volts
- rDS(on): 0.28 ohms
- IDSS: 14,000 milliamps
- TJ: -55 to 175 C
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Supplier: ROHM Semiconductor GmbH
Description: MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
- V(BR)DSS: 30 volts
- IDSS: 7,000 milliamps
- QG: 5.8 nC
- PD: 2,000 milliwatts
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Supplier: ROHM Semiconductor GmbH
Description: MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
- V(BR)DSS: 100 volts
- IDSS: 55,000 milliamps
- QG: 143 nC
- PD: 100,000 milliwatts
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Supplier: ASAP Semiconductor LLC
Description: EVAL MODULE FOR TPS2490-001 Power Management Hot Swap Controller No TPS2490 High Side MOSFET Driver Inrush Current Limiting
- Category: Development Board
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Supplier: ROHM Semiconductor GmbH
Description: MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
- V(BR)DSS: 30 volts
- IDSS: 12,500 milliamps
- QG: 12.7 nC
- PD: 2,000 milliwatts
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Supplier: Newark, An Avnet Company
Description: MOSFET, HIGH POWER MODULE, 6 N CHANNEL, 75V, 300A; Channel Type:Six N Channel; Continuous Drain Current Id:300Arms; Drain Source Voltage Vds:75V; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:6V; Power Dissipation:1.3kW
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Supplier: Newark, An Avnet Company
Description: MOSFET, HIGH POWER MODULE, 6 N CHANNEL, 100V, 300A; Channel Type:Six N Channel; Continuous Drain Current Id:300Arms; Drain Source Voltage Vds:100V; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:6V; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MOSFET POWER SWITCH, HIGH SIDE, NSOIC-8; No. of Channels:-; Driver Configuration:High Side; Power Switch Type:MOSFET; No. of Pins:8Pins; IC Case / Package:NSOIC; Input Type:-; Source Current:-; Sink Current:-; Supply Voltage Min:2.7VRoHS
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Supplier: Newark, An Avnet Company
Description: MOSFET/IGBT DRIVER, HIGH/LOW SIDE, ESOP; Driver Configuration:High Side and Low Side; Peak Output Current:2.5A; Supply Voltage Min:4.75V; Supply Voltage Max:5.25V; Driver Case Style:eSOP; No. of Pins:16Pins; Input Delay:253ns; OutputRoHS Compliant: Yes
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Supplier: ROHM Semiconductor USA, LLC
Description: BD2266G-M is low on-resistance N-channel MOSFET high-side power switch, optimized for Universal Serial Bus (USB) applications. BD226xG-M series are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start.
- Features: Other
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Supplier: SCHURTER Inc
Description: Description Patented surface mount thermal fuse to protect against thermal runaway of power semiconductors such as: MOSFET's, IC's, IGBT's, Triac's, SCR's, etc. Highest reliability thanks to complete galvanic Separation. Unique Selling Proposition Separates rated voltages up to 60 VDC
- Rated Voltage: 60 volts
- Voltage Type: DC Voltage
- Lead Material: Other
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Supplier: Wolfspeed
Description: Wolfspeed introduces its latest C3MTM SiC MOSFET technology in die form. This new device is capable of 1000V blocking voltage across the entire operating temperature range, thereby greatly reducing derating requirements. C3M MOSFET die can be configured in parallel to achieve higher
- Features: MOSFET, Other
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Supplier: Littelfuse, Inc.
Description: The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space
- Polarity: N-Channel
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: BD82007FVJ-M is the low on-resistance N-Channel MOSFET high-side power switch optimized for Universal Serial Bus (USB) applications. BD82007FVJ-M is equipped with the function of over-current protection, thermal shutdown, under-voltage lockout and soft-start.
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: The ISL95808 is a high frequency, dual MOSFET driver with low shutdown current, optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. It is especially suited for mobile computing applications that require high
- Production Status: Full Production
- Features: Other
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Adam Tech’s HCT Series High Current Terminals are designed for reliable, high-current connections between wires and PCBs, supporting up to 250A. Made from C3604 brass or phosphor bronze with matte tin or tin plating, they provide excellent conductivity and corrosion resistance. Press (read more)
Browse Power Connectors Datasheets for New Yorker Electronics Co., Inc. -
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end equipment comes a greater need for protection. E-Fuse, enabled by Microchip's 700V and 1200V Silicon Carbide (SiC) technology, provides a faster, more reliable method for protecting power electronic applications. E-Fuse solutions can detect and interrupt fault currents microseconds (read more)
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onsemi's NCV84120 is a fully protected single-channel high-side driver that can be used to switch various loads, such as bulbs, solenoids, and other actuators. The device incorporates advanced protection features such as active inrush current management, overtemperature shutdown (read more)
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low DC resistance and ultra-low AC losses for greater power converter efficiency at high frequencies (2 to 5 MHz) and high ripple current. XEL40xxV Family inductors measure just 4.0 x 4.0 mm with a maximum height of 3.2 mm and feature a rugged, composite construction that provides magnetic (read more)
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Conduct Research Top
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Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
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Low Current MOSFET Balances High Value than 1000 Farads
a device designed for a few milliamps of power is quite sufficient for even high-value, high-current supercapacitors.
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Universal Power MOSFET Interface IC (TC4420/9)
current, and logic inputs that can withstand up to 5V negative swings. Although designed as a power MOSFET driver, it can act as a level shifter, comparator, waveshaper and pulse transformer driver, to mention a few of its possible uses.
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Application: Reed Relays in Pulsed High Current Testing
When testing discrete semiconductors, particularly power devices (Fets, mosfets, etc), high current testing is a very important factor. The high currents allow the designer to determine the integrity of the chip and to make sure it is properly placed on its substrate for efficient operation.
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Using Low Resistance MOSFETs as Load Switches
a resistor and therefore Ohms law applies; when turned off, the MOSFET appears as a diode and as such blocks current in one direction with a very high resistance (if reverse protection is required, an additional MOSFET or blocking diode is required). P-channel MOSFETs are normally used
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How to Choose Power FETs for ORing MOSFET Controllers
Using ORing controllers and power FETs in place of ORing power diodes can minimize power loss in high-current power distribution systems. This article discusses key selection steps for choosing power FETs, and provides design tips to ensure engineers meet their target specifications when developing
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Soft-Start Controller For Switching Power Supplies
driven by the power supply is capacitive, the problem is exaggerated due to the large transient currents required to charge the capacitive load. In extreme instances, the repeated high stress of start-up can result in catastrophic failures in the driver section, typically, the power MOSFET transistors
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Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
The demand for portable low cost welding machines, especially in developing countries, is increasing. In the Manual Metal Arc and Tungsten Inergt Gas types, in power range from 1,5kW up to 5kW, discrete IGBTs and MOSFETs are broadly used. Mostly, these machines use hard switching current mode PWM
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Electronic components
Now the switches for average voltages can with to be integrated into the comparison to the lateral MOSFET of higher current load capacity.
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Electronics for engineers and natural scientists
Thereby, the drain current flows through the mostly large-scale drain connection, several source connections can high current - MOSFET .
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Voltage Regulators for Next Generation Microprocessors
The empirical model from [5] aims at representing the reverse recovery of high current power MOSFETs .
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IXYS Introduces New Power MOSFETs
Santa Clara, CA - IXYS Corporation recently announced the release of a new line of High Current Power MOSFETs in versions ranging from 55V to 100V, utilizing IXYS' MOSFET non-planar technology (Trench, suffix T), to provide high efficiency in power management circuits…
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The Impact of Repetitive Unclamped Inductive Switching on the Electrical Parameters of Low-Voltage Trench Power nMOSFETs
In 2001, he joined Philips Semiconductors, U.K., as a Senior Development Engineer in the Automo- tive Advanced Power Development Group, where he was the Principal Investigator for the power MOSFET avalanche phenomenon and high current power MOSFET activities for automotive applications.
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Linear Drives for Industry Applications IX
Full-bridge inverter circuit uses UTC 8N60 as power device, it is a high voltage and high current power MOSFET .
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The impact of SiGe BiCMOS on cellular handset integration
These control and regulation functions require higher voltage, higher current power MOSFETs as well as CMOS for digital control circuits.
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Table of Contents
Measurement Technique for the Static Output Characterisation of High Current Power MOSFETs .