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Supplier: ROHM Semiconductor GmbH
Description: Ultra small mold type package Switching Diode DAN217WM is suitable for high frequency switching applications.
- VF: 1.2 volts
- IF: 100,000 mA
- VR: 80 volts
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: ROHM Semiconductor USA, LLC
Description: Ultra small mold type package Switching Diode DAN217WM is suitable for high frequency switching applications.
- VF: 1.2 volts
- IF: 100,000 mA
- VR: 80 volts
- Tj: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: 1SS390SM is a Band Switching diode with low rF, suitable for High frequency switching.
- VR: 35 volts
- Diode Type: General Purpose (PN Junction Diodes)
- Features: Other
- RoHS Compliant: RoHS Compliant
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly
- VF: 0.6 volts
- Diode Applications: Detector, Mixer, Modulation, Switching
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-200V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching frequency Low switching losses
- Diode Applications: High Voltage
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: Richardson RFPD
Description: DIODE PHASE LEG POWER MODULE. Application: Anti-Parallel Diode, Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage, High Current,
- IF: 400,000 mA
- RoHS Compliant: RoHS Compliant
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Supplier: ROHM Semiconductor GmbH
Description: 1SS390SMFH is a Band Switching diode with low rF, suitable for High frequency switching. This is a high-reliability product of automotive grade qualified to AEC-Q101.
- VR: 35 volts
- Diode Type: General Purpose (PN Junction Diodes)
- Features: Other
- RoHS Compliant: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: 24V | automotive smart high-side switch BSS169 | N-Channel Depletion Mode MOSFET BAS40-06 | Schottky Diodes BSS123N | Small signal/small power MOSFET BTS4880R | Classic PROFET™ 24V | automotive smart high-side switch SAK-TC337LP-32F300S AA AURIX™ Family – TC33xLP IM523-S6A |
- tON: 100,000 ns
- tOFF: 140,000 ns
- Operating Ambient Temperature: -30 to 85 C
- Features: Other
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Supplier: Fairview Microwave Inc.
Description: RF switches from Fairview Microwave are from both PIN diode and electromechanical relay. RF PIN diode switches are available with SMA connectors and operate with a minimum frequency range between 100 MHz to 2 GHz and a maximum frequency range between 1 GHz and 16 GHz.
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Supplier: ROHM Semiconductor GmbH
Description: DAN235FM is suitable for High frequency switching Band Switching diode.
- VR: 35 volts
- Diode Type: General Purpose (PN Junction Diodes)
- Features: Other
- RoHS Compliant: RoHS Compliant
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Supplier: Skyworks Solutions, Inc.
Description: The SKY12208-478LF is a high power handling, Single-Pole, Double-Throw (SPDT) silicon PIN diode switch. The device can cover two frequency bands, 0.02 to 0.70 GHz or 0.05 to 2.7 GHz, by changing the value of an RF choke in the SMT bias network. The SKY12208-478LF features low
- Frequency Range: 20 to 2,700 MHz
- Isolation (Port to Port): 35 to 50 dB
- Features: Other
- Type: SPDT
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Supplier: Infineon Technologies AG
Description: Silicon PIN Diode Summary of Features RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics Pb-free (RoHS compliant) package Potential Applications Wireless Communications High Speed Data Networks
- IF: 140 mA
- trr: 1,000 ns
- CT: 0.5 pF
- Diode Type: PIN Diodes, RF Diodes
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Supplier: Infineon Technologies AG
Description: Depletion Mode MOSFET BAS40-06 | Schottky Diodes BSS123N | Small signal/small power MOSFET ITS4140N | PROFET™ Industrial | Smart high-side switch IM523-S6A | Intelligent Power Modules (IPM) BSS169 | N-Channel Depletion Mode MOSFET BAS40-06 | Schottky Diodes BSS123N | Small
- tON: 100,000 ns
- tOFF: 150,000 ns
- Operating Ambient Temperature: -40 to 125 C
- Features: Other
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction
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Supplier: Infineon Technologies AG
Description: Silicon PIN Diodes Summary of Features PIN diode for high speed switching of RF signals Very low forward resistance (low insertion loss) Very low capacitance (high isolation) For frequencies up to 3GHz Pb-free (RoHS compliant) package Potential Applications
- IF: 100 mA
- VR: 50 volts
- trr: 75 ns
- Features: Other, Single
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Supplier: Fairview Microwave Inc.
Description: RF switches from Fairview Microwave are from both PIN diode and electromechanical relay. RF PIN diode switches are available with SMA connectors and operate with a minimum frequency range between 100 MHz to 2 GHz and a maximum frequency range between 1 GHz and 16 GHz.
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Supplier: Fairview Microwave Inc.
Description: RF switches from Fairview Microwave are from both PIN diode and electromechanical relay. RF PIN diode switches are available with SMA connectors and operate with a minimum frequency range between 100 MHz to 2 GHz and a maximum frequency range between 1 GHz and 16 GHz.
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Supplier: Fairview Microwave Inc.
Description: quick shipment. Our PIN diode RF switch is manufactured in a SPDT design (single pole double throw) with SMA ports. Our coaxial SPDT PIN diode switch is rated for a maximum frequency of 6 GHz and a maximum power of 40 Watts. PIN diode single pole double throw RF switch
- Frequency Range: 0 to 6,000 MHz
- Insertion Loss: 1.3 dB
- Isolation (Port to Port): 25 dB
- VSWR: 1.5 :1
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Supplier: Renesas Electronics Corporation
Description: The ISL6615 is a high-speed MOSFET driver optimized to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver, combined with an Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
- Transistor Grade / Operating Range: Commercial
- Features: Other
- Polarity: PNP
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Supplier: Littelfuse, Inc.
Description: GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a
- VCES: 600 volts
- VCE(on): 2.1 volts
- IC(max): 60 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a
- VCES: 600 volts
- VCE(on): 2.5 volts
- IC(max): 75 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a
- VCES: 600 volts
- VCE(on): 2.7 volts
- IC(max): 70 amps
- Features: IGBT, Other
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Supplier: Littelfuse, Inc.
Description: GenX3™ IGBTs are PT (Punch Through) manufactured using our robust HDMOS IGBT process. 300V GenX3™ IGBTs offer switching capabilities up to 150 kHz, with currents ranging from 42A to 120A. The combination of high switching speeds and low conduction losses offers power designers a
- VCES: 600 volts
- VCE(on): 3 volts
- IC(max): 60 amps
- Features: IGBT, Other
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Supplier: Microchip Technology, Inc.
Description: current sensing Closed loop control of output current High PWM dimming ratio Internal 250V linear regulator (can be extended using external Zener diodes) Internal 2% voltage reference (0°C < TA < 85°C) Constant frequency or constant off-time operation Programmable slope
- Input Voltage: 9 to 250 volts
- Type: Dimmable
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: Newark, An Avnet Company
Description: LED DRVR, HIGH, BRIGHT, TSSOP-16; Device Topology:Buck, Boost, Buck-Boost; Input Voltage Min:6.3V; Input Voltage Max:60V; Output Voltage Max:-; Output Current Max:300mA; Switching Frequency:1MHz; No. of Outputs:1Outputs; IC RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: LED DRVR, HIGH, BRIGHT, SO8EP; Device Topology:Non Isolated Buck; Input Voltage Min:85V; Input Voltage Max:277V; Output Voltage Max:-; Output Current Max:-; Switching Frequency:300kHz; No. of Outputs:1Outputs; IC Mounting:SMD; DriverRoHS Compliant: Yes
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Supplier: Laserglow Technologies
Description: The LWS-1064 Series of Diode-Pumped Solid-State (DPSS) AOM Q-Switched Lasers are ideal for applications requiring the highest available output in 1064 nm. At over 100 W average output this series maintains a high level of long-term output power stability and a long operating lifetime
- Wavelength Range: 1,064 to 1,604 nm
- Laser Wavelength: Infrared
- Features: Internal Power Supply
- Laser Output: Q-Switched
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Supplier: Radwell International
Description: FAST RECOVERY RECTIFIER DIODE, SINGLE CHIP RECTIFIER FOR SWITCH MODE POWER SUPPLY AND HIGH FREQUENCY DC TO DC CONVERTERS. SOD93 PACKAGE.. FREE 2 YEAR RADWELL WARRANTY
- Diode Type: General Purpose (PN Junction Diodes)
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Supplier: Fuji Electric Corp. of America
Description: trade-off between on-voltage and switching loss compared with previous High-Speed W Series products. This enhancement contributes to energy saving and miniaturization of industrial equipment with a switching frequency of approximately 20 kHz, which is common among
- VCES: 1,200 volts
- IC(max): 25 amps
- Switching Speed: 20 kHz
- TJ: 175 C
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Supplier: Microchip Technology, Inc.
Description: amplifier to control the output current in closed loop enabling high output current accuracy (in the case of buck and buck-boost converters, the output current can be sensed using a high side current sensor like the HV7800). In the constant frequency mode, multiple HV9912 ICs
- Input Voltage: 9 to 100 volts
- Type: Dimmable
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: kTB Solutions
Description: kTB High ENR Noise Sources The KTB k2600 Series High ENR Noise Source embody excellent stability with temperature and voltage. They are well suited for receiver testing, noise figure measurements, and any application requiring broad bandwidth and fast switching time. Like all
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Supplier: Allied Electronics, Inc.
Description: Features: Plastic Package Has Underwriters Laboratories Flammability Classification 94V-0 Ideally Suited for Use In Very High Frequency Switching Power Supplies, Inverters and as a Free Wheeling Diode Ultrafast Recovery Time for High Efficiency Excellent
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Supplier: Allied Electronics, Inc.
Description: Features: Plastic Package Has Underwriters Laboratories Flammability Classification 94V-0 Ideally Suited for Use In Very High Frequency Switching Power Supplies, Inverters and as a Free Wheeling Diode Ultrafast Recovery Time for High Efficiency Excellent
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Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
Browse Diodes Datasheets for Win Source Electronics -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high-frequency (read more)
Browse Diodes Datasheets for Win Source Electronics -
high-frequency applications where energy efficiency and response speed are critical. With advantages including low leakage current, temperature stability, and reliable electrical performance, SS16 Schottky diodes are widely used in switching power supplies, voltage protection circuits, solar (read more)
Browse Diodes Datasheets for Win Source Electronics -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
the junction during automated or manual handling. The flip chip configuration is suitable for pick-and-place insertion. The high cutoff frequencies of these diodes allow use through W-band frequencies. Typical applications include single and double balanced mixers in radio (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
zero), and high resistance in the other (ideally infinite). They have a wide range of uses and there are many different types of diodes available. The different properties of these varying diodes allow each one to perform in specialized functions. Below are the most common types of diodes and their (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
kTB Noise Diodes kTB noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response (read more)
Browse Diodes Datasheets for kTB Solutions -
. These diodes are available in SOD-882, SC-79, and SOT-23 packages. Wiring configurations include singles, series pairs, and reverse series pairs. They may be used at frequencies up to 24 GHz. SMS7630 Series includes SMS7630-079LF, SMS7630-005LF, SMS7630-006LF, SMS7630 (read more)
Browse Diodes Datasheets for Skyworks Solutions, Inc. -
Switch Mode/High Frequency Gate Drive Transformers Triad gate drive transformers are used universally in all high frequency switching topologies to isolate (read more)
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Page 3. Semiconductor parts with 269 in root number
High frequency switching diode .
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SU27 datasheet : Datasheets for Electronic Components and Semiconductors
High frequency switching diode .
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MRS Online Proceedings Library - Fabrication and Characterization of Thin-Film Metal-Insulator-Metal Diode for use in Rectenna as Infrared Detector - Cambridge...
Successful fabrication of such high frequency switching diodes with antenna as detectors, offer a much faster response time than existing bolometer.
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Study of rectifier diode loss model of the Flyback converter
While this is good enough for line frequency rectifiers, these diodes are also called rectifier ultra first recovery (UFR) diodes high switching frequency pulse width modulation (PWM) Flyback SMPS argues UFR diode.
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HVC306A datasheet - Variable capacitance diode for TV tuner : Datasheets for Electronic Components and Semiconductors
High frequency antenna switching diode .
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HVU308A datasheet - Variable capacitance diode for TV tuner : Datasheets for Electronic Components and Semiconductors
High frequency antenna switching diode .
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Boost full bridge DC-DC converter based modular converter for Telecom Power Supplies
For the steady state analysis of the DC-DC converter, high frequency switches and diodes are considered to be ideal; the output DC voltage is assumed to be ripple free due to very large output filter capacitor (Cd).
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Pulse-width Modulated DC-DC Power Converters
The high - frequency switching diodes used in power elec- tronics include soft recovery, fast recovery (FR), ultra-fast recovery (UFR), and hyper-fast recovery (HFR) pn junction silicon diodes, in which the reverse recovery switching time and the power loss are reduced.
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Pulse-width Modulated DC-DC Power Converters
The high - frequency switching diodes used in power electronics include soft recovery, fast recovery, ultrafast recovery, and hyperfast recovery pn junction silicon diodes, in which the reverse recovery switching time and power loss are reduced.
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hvu131 datasheet : Datasheets for Electronic Components and Semiconductors
High frequency antenna switching diode .