High Frequency Transistors

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  • AN721: Impedance Matching Networks Applied to RF Power Transistors, Courtesy of Motorola
    Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer to high frequency power amplifiers. Although matching networks normally take the form of filters and therefore are also useful to provide frequency discrimination, this aspect will only
  • RF Test Sockets: The Key to the Effective Testing of High-Frequency Devices
    With rapid and constant advances in silicon technology, today's IC packages are continually changing both inside and out. The inside of the package is holding more transistors per square millimeter. The outside of the package is constantly being trimmed and reconfigured to approach the size
  • Microwave RF: GaN Devices Raising the Output-Power Performance Bar
    Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
  • Design Considerations to Increase Power Density in Welding Machines Converters Using TRENCHSTOP(TM)5 IGBT
    controls and simple topologies, like Two Transistors Forward (TTF), Half Bridge and Full Bridge. For these configurations, high frequency is seen as one of the most important design trends to improve performance and to reduce cost at system level.
  • EETimes.com | Electronics Industry News for EEs & Engineering Managers
    on new, high-end processor architecture EAST FISHKILL, N.Y. -- IBM Corp. here has announced its next-generation, Unix-based server built around a dual-processor architecture complete with copper-interconnects and silicon-on-insulator (SOI) technology. The new Regatta server, to be shipped next year
  • RF Power: GaN Moves In for the Kill
    papers, analyst reports, and corporate brochures. After all, GaN has at least ten times the power density per millimeter of transistor gate periphery, higher operating voltages (reducing impedance transformation issues), higher efficiency, and the ability to combine high RF power output over broad
  • Designing Power Supplies for Global Applications (.pdf)
    transistors-the two-transistor forward converter-can be used to provide low-cost, steady output voltages even when operating over a wide range of input voltages. (PWM) to provide high conversion efficiency. Such supplies are generally limited by the minimum pulse widths possible when using commercial PWM

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