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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN High Volt Power
- VCEO: 450 volts
- IC(max): 30,000 milliamps
- PD: 275,000 milliwatts
- TJ: 200 C
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to
- hfe: 120 to 360
- VCEO: 50 volts
- IC(max): 2,000 milliamps
- PD: 1,600 milliwatts
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High
- hfe: 100 to 260
- VCEO: -100 volts
- IC(max): -2,000 milliamps
- PD: 1,250 milliwatts
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31C Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation
- hfe: 25 to 50
- VCEO: -100 volts
- IC(max): -3,000 milliamps
- PD: 1,600 milliwatts
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. Features and benefits High thermal power dissipation capability High energy efficiency due to less heat generation Electrically similar to
- Features: Other, Power BJT Transistors
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Supplier: Emhiser Research, Inc.
Description: amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT. Emhiser's custom RF
- Frequency Range: 1,435 to 2,400 MHz
- Minimum Gain: 1.5 dB
- Maximum Gain: 1.5 dB
- Input VSWR: 1 :1
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN High Volt Power
- Features: Bipolar RF Transistors
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Features: General Purpose BJT
- Polarity: NPN
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Supplier: Allied Electronics, Inc.
Description: Silicon Power Transistor High Power Audio Amplifiers
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Supplier: Allied Electronics, Inc.
Description: Transistor; Bipolar; PNP; ComplementaryHigh-Power; T03; 15A; 120V CEO
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Supplier: Win Source Electronics
Description: / Package: 6-TSSOP, SC-88 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 40V Max Vce (sat): 200mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 6V Maximum Power Dissipation: 300mW Alternative Parts
- VCEO: 40 volts
- IC(max): 100 milliamps
- PD: 300 milliwatts
- TJ: 150 C
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Supplier: Win Source Electronics
Description: (TJ) Case / Package: TO-225AA Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 500mA, 1.5A Typical Gain (hFE) (Min): 8 @ 500mA, 2V Maximum Power Dissipation: 1.4W Alternative Parts (Cross-Reference): MJE13003G; Introduction Date:
- VCEO: 400 volts
- IC(max): 1,500 milliamps
- PD: 1,400 milliwatts
- TJ: -65 to 150 C
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Supplier: Win Source Electronics
Description: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-343 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 5V Typical Gain (hFE) (Min): 60 @ 20mA, 4V Maximum Power Dissipation: 160mW Alternative Parts (Cross-Reference): START420TR; START540TR;
- VCEO: 5 volts
- IC(max): 35 milliamps
- PD: 160 milliwatts
- TJ: 150 C
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Supplier: Win Source Electronics
Description: / Package: 6-TSOP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 160 @ 100mA, 1V Maximum Power Dissipation: 600mW Alternative Parts
- VCEO: 45 volts
- IC(max): 500 milliamps
- PD: 600 milliwatts
- TJ: 150 C
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE POWER TRANSISTOR, NPN, 800V, 24A, ISOWATT218FX; Transistor Polarity:NPN; Collector Emitter Voltage Max:800V; Continuous Collector Current:24A; Power Dissipation:75W; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes
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Supplier: Richardson RFPD
Description: Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
- Power Gain: 14 dB
- Output Power: 250 watts
- Operating Frequency: 2 to 30 MHz
- Features: Other, Power BJT Transistors
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Supplier: Utmel Electronic Limited
Description: ST13007D Series NPN 400V 8 A High Voltage Fast-Switching Power Transistor-TO-220
- Polarity: NPN
- Features: Other
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Supplier: ROHM Semiconductor USA, LLC
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging and memory module
- Features: Power BJT Transistors
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers,
- hfe: 6 to 20,000
- VCEO: 40 to 500 volts
- VCBO: 40 to 700 volts
- IC(max): 1,000 to 20,000 milliamps
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Supplier: Newark, An Avnet Company
Description: HIGH VOLTAGE TRANSISTOR, PNP, -45V; Transistor Polarity:PNP; Collector Emitter Voltage Max:45V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:150MHz RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: HIGH CURRENT TRANSISTOR, NPN, 300V; Transistor Polarity:NPN; Collector Emitter Voltage Max:300V; Continuous Collector Current:3A; Power Dissipation:1.2W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:80MHzRoHS Compliant: Yes
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Supplier: Allied Electronics, Inc.
Description: NTE54 NPN Silicon Complementaryyy Transistor, High Frequency Driver for Audio Amplifier, TO220 Package
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Supplier: ROHM Semiconductor GmbH
Description: Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
- Transistor Grade / Operating Range: Commercial
- Polarity: NPN
- Features: Other
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Supplier: Rochester Electronics
Description: 50 V, 2 A NPN high power bipolar transistor
- Features: Bipolar RF Transistors, Other, Power BJT Transistors, Power MOSFET
- Polarity: NPN
- Packing Method: Tape Reel
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Supplier: Allied Electronics, Inc.
Description: NPN Transistor, 150 V Collector to Emitter Voltage, 180 V Collector to Base Voltage, TO3 Package High collector-emitter sustaining voltage High DC current gain Low collector–emitter saturation voltage Fast switching times Used for industrial amplifier and switching circuit
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Supplier: Universal Semiconductor, Inc.
Description: high voltage bi-directional DMOS switches with low power CMOS logic to provide efficient control of high voltage analog signals. This HIVIC incorporates high voltage level shifters to interface the high voltage switches to the CMOS logic. The level shifters and
- PD: 2,000 milliwatts
- TJ: -55 to 125 C
- Number of Transistors in the Chip: 1 to 8
- Features: CMOS, Complementary, Other, Power BJT Transistors
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Supplier: RS Components, Ltd.
Description: NPN high power bipolar transistor
- Features: General Purpose BJT, Other
- Polarity: NPN
- Package Type: TO-251 / TO-252
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Supplier: Integra Technologies, Inc.
Description: Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.340″ (34.04mm), L=0.540″ (13.72mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture
- Power Gain: 13.5 dB
- Output Power: 300 watts
- Operating Frequency: 960 to 1,215 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: use of external tuners is not allowed during screening. This device is rated for a peak output power level of PPEAK = 400W @ 10% duty factor. This corresponds to an average power PAVG = 40W.
- Power Gain: 11 dB
- Output Power: 400 watts
- Operating Frequency: 2,700 to 2,900 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: Integra Technologies, Inc.
Description: Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800″(20.32mm), L=0.400″(10.16mm) ■ 100% High Power RF Tested in 50Ω RF Test Fixture
- Power Gain: 14 dB
- Output Power: 50 watts
- Operating Frequency: 5,200 to 5,900 MHz
- Features: MOSFET RF Transistors, Other, Power BJT Transistors
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers,
- hfe: 35 to 800
- VCEO: 30 to 80 volts
- VCBO: 60 to 140 volts
- IC(max): 50 to 1,000 milliamps
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Bipolar Transistors - BJT High Volt Fast Switching Trans Product overview: FJD5553TM from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and
- IC(max): 3,000 milliamps
- PD: 1.25 milliwatts
- Features: Bipolar RF Transistors, Other
- Polarity: NPN
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Supplier: Linear Systems
Description: The LS301 Series High Voltage, Super Beta, Monolithic Dual, NPN Transistor is a direct replacement for Micro Power Systems MP301, MP302, MP303 Series. It is ideal for Small Signal Transistors, Super Beta, Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS,
- Features: General Purpose BJT, Other
- Polarity: NPN
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In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics
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Subject Index
Sinnesbichler, F.X., + , MWSYM 99 9-12 vol.1 high power BJTs , phys.-based large-sig. model.
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1KW Push-Pull High Efficiency RF BJT Transistor for Radar Applications
The superior performance achieved in this work, shows the advantage of a high power BJT in Radar applications.
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Determination of the limiting factors in the absolute phase noise of an L-band dielectric resonator oscillator
In the near future we hope to build a high power BJT amplifier to boost the signal output from our stable 2 GHz DRO, so that we can improve the system floor of the residual phase noise measurement test set.
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Thermal, Power and Electrical Engineering
A high power BJT has the high driving-current as well as low conduction-voltage merits, however, actually this device will with the minority carriers storage-up effect.
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Semiconductor Device Physics and Design
High power BJT device .
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Recent developments in nonlinear network design: Overview of integrated nonlinear microwave and millimeter‐wave circuits workshop
J.W. Bandler, R.M. Biernacki, Q. Cai, and S.H. Chen, Compression analysis of a high power BJT amplifier, Digest of the Third International Workshop on Inte- grated Nonlinear Microwave and Millimeterwave Circuits (INMMC’94), Gerhard-Mercator-University, Duisburg, Germany, October 5–7 …
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Equivalent circuit model for thermal resistance of deep trench isolated bipolar transistors
The use of multiple emitter fingers to avoid current inhomogeneities and hot spots in high power BJTs [5] results in mutual thermal coupling between emitters, leading to a higher overall device Rth, compared to an equivalent single emitter device [6] of same …
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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits
Compression Analysis of a High Power BJT Amplifier .
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High-Q tuned active bandpass filter for wireless application
In perspective a high power BJT can be applied to increase a dynamic range of active tuned filter suggested for implementing in base station of mobile communication systems.
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Spectral characteristics of resonant link inverters
The upper maximum is set by the switch times and for the high power BJT devices considered should not exceed lOOkHz, less for higher current modules.