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Supplier: Utmel Electronic Limited
Description: Bipolar Transistors - BJT NPN High Volt Power
- IC(max): 30000 milliamps
- Number of Transistors in the Chip: 1
- PD: 275000 milliwatts
- Packing Method: Shipping Tube / Stick Magazine, Other
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT NPN High Volt Power
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Supplier: Nexperia B.V.
Description: PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61002NYCLH. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability
- Package Type: Other
- Polarity: PNP
- Transistor Type: Power BJT Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYCLH Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER
- Transistor Type: Bipolar RF Transistors
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT High voltage fast-switching NPN power transistor
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT High voltage fast-switching pnp power transistor
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Supplier: Karl Kruse GmbH & Co. KG
Description: Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Richardson RFPD
Description: Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.
- Package Type: Other
- Transistor Type: Power BJT Transistors
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Supplier: Emhiser Research, Inc.
Description: customers. Custom amplifiers may be designed in a wide variety of rack-mounted and airborne packages, power levels, gains, frequency bands, supply voltage requirements, communications, and control. Transistor technologies utilized include SiBJT, HBT, MOSFET, LDMOSFET, MESFET, and PHEMT
- Amplifier Type: Power Amplifier
- Frequency Range: 1435 to 2400 MHz
- Input VSWR: 1 :1
- Maximum Gain: 1.5 dB
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Supplier: Win Source Electronics
Description: Dissipation: 2W Alternative Parts (Cross-Reference): TIP47-S; Introduction Date: October 11, 1999 ECCN: EAR99 Country of Origin: China, Italy, Morocco, Singapore Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market:
- IC(max): 1000 milliamps
- PD: 2000 milliwatts
- Package Type: TO-220, SOT3, Other
- Packing Method: Rail, Shipping Tube / Stick Magazine, Other
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Supplier: Twilight Technology Inc.
Description: Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging
- Transistor Type: Power BJT Transistors
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Supplier: Win Source Electronics
Description: -used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Automotive, Automation & Process Control, Audio
- Package Type: TO-92, SOT3, Other
- Polarity: NPN, Other
- Transistor Type: General Purpose BJT
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers,
- Package Type: TO-3, TO-39, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Other
- Transistor Type: Power BJT Transistors
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Supplier: Rochester Electronics
Description: 50 V, 2 A NPN high power bipolar transistor
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power BJT Transistors, Bipolar RF Transistors, Power MOSFET
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Supplier: Win Source Electronics
Description: Temperature Range - Operating: 175°C (TJ) Case / Package: TO-236AB (SOT23) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 5mA, 6V Maximum Power Dissipation: 360mW Is this a common-used part?: Yes Popularity: High
- Noise Figure: 1.4 dB
- Operating Frequency: 8000 MHz
- Package Type: SOT3, Other
- Packing Method: Tape Reel, Other
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Supplier: Win Source Electronics
Description: @ 100mA, 1V Maximum Power Dissipation: 1W Introduction Date: November 03, 1997 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 64 pct. Supply and Demand Status:
- IC(max): 500 milliamps
- Operating Frequency: 100 MHz
- PD: 1000 milliwatts
- Package Type: SOT3, Other
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Supplier: Universal Semiconductor, Inc.
Description: combines high voltage bi-directional DMOS switches with low power CMOS logic to provide efficient control of high voltage analog signals. This HIVIC incorporates high voltage level shifters to interface the high voltage switches to the CMOS logic. The level
- Package Type: Other
- Polarity: Complementary
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: Power BJT Transistors, CMOS
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Supplier: Integra Technologies, Inc.
Description: Under Class AB Operation ¦ Metal Based Package Sealed With Ceramic-Epoxy Lid ¦ Gold Metallization System: Chip - Wire Bond - Package ¦ Package Size: W=1.340? (34.04mm), L=0.385? (9.78mm) ¦ 100% High Power RF Tested in Fixed Tuned RF Test Fixture
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Richardson RFPD
Description: The µPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. The device is
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: Dual NPN Power High Gain Transistor SM8 - Discrete Semiconductors - Bipolar Transistors
- IC(max): 5000 milliamps
- PD: 2750 milliwatts
- Package Type: Other
- Polarity: NPN
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Supplier: Linear Systems
Description: The LS301 Series High Voltage, Super Beta, Monolithic Dual, NPN Transistor is a direct replacement for Micro Power Systems MP301, MP302, MP303 Series. It is ideal for Small Signal Transistors, Super Beta, Amplifier & Switching Applications. Available in PDIP 8L ROHS, TO-71 6L ROHS,
- Package Type: Other
- Polarity: NPN
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Supplier: Semicoa
Description: SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available
- IC(max): 1000 milliamps
- Package Type: Other
- Polarity: PNP
- TJ: -65 to 200 C
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers,
- IC(max): 50 to 1000 milliamps
- Polarity: NPN
- VCBO: 60 to 140 volts
- VCEO: 30 to 80 volts
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Supplier: RS Components, Ltd.
Description: NPN High Voltage Transistor PowerDI5 - Discrete Semiconductors - Bipolar Transistors
- Package Type: Other
- Polarity: NPN
- Transistor Type: General Purpose BJT
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Supplier: Vincotech GmbH
Description: Small dimensions Full compatibility to the electromechanical standard relay SNR Up to 3.5 A DC forward current, very low power loss due to low RDSON High switching speed and endurance Silent, spark- and bounce-free switching Not sensitive to vibration, impact or extreme environmental
- Application Type: Other
- Input (Pick-up) Voltage Range: 24 volts
- Input Current Range: 0.0070 amps
- Load Voltage: 48 volts
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Supplier: Radwell International
Description: BIPOLAR TRANSISTORS - BJT HIGH VOLTAGE FAST NPN POWER TRAN TO247-3 400V. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Infineon Technologies AG
Description: Reference design board – single-channel 1700 W (2 Ohm) half-bridge class D audio power amplifier The reference design board IRAUDAMP9, 1-channel 1700 W half-bridge class D audio power amplifier is featuring the IRS2092S controller IC. Benefits 1700 W
- Category: Development Board
- Supported System: Other
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Supplier: Microchip Technology, Inc.
Description: The EMC1438 is a high accuracy, low cost, System Management Bus (SMBus) temperature sensor. Advanced features such as Resistance Error Correction (REC), Beta Compensation (to CPU diodes requiring the BJT or transistor model) and automatic diode type detection combine to provide a
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Supplier: Microchip Technology, Inc.
Description: The EMC1702 is a combination high-side current sensing device with precision temperature measurement. It measures the voltage developed across an external sense resistor to represent the high-side current of a battery or voltage regulator. It also measures the bus voltage and uses
- Mounting / Configuration: SMD
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Supplier: ValueTronics International, Inc.
Description: ) Semiconductor devices (SCRs, IGBTs, MOSFETs, CMOS, BJTs) Power inverters/converters Electronic ballasts Industrial/consumer electronics Mobile communications (phone, satellite, relay stations) Motor drives Transportation systems (electronic
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Supplier: ValueTronics International, Inc.
Description: Devices (SCRs, IGBTs, MOSFETs, CMOS, BJTs) Power Inverters/Converters Electronic Ballasts Industrial /Consumer Electronics Mobile Communications (Phone, Satellite, Relay Stations) Motor Drives Transportation Systems (Electronic Vehicles
- Bandwidth: 15 MHz
- Probe Type: Current
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Featured Products Top
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In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With (read more)
Browse Transistors Datasheets for Win Source Electronics -
Principle Low Dropout Regulators (LDOs) mainly ensure that the output voltage is steady. This output voltage is higher than the input power. It usually uses a P-channel MOSFET or a PNP bipolar junction transistor (BJT) to drive it carefully. This keeps it just under the set (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
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Subject Index
Sinnesbichler, F.X., + , MWSYM 99 9-12 vol.1 high power BJTs , phys.-based large-sig. model.
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1KW Push-Pull High Efficiency RF BJT Transistor for Radar Applications
The superior performance achieved in this work, shows the advantage of a high power BJT in Radar applications.
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Determination of the limiting factors in the absolute phase noise of an L-band dielectric resonator oscillator
In the near future we hope to build a high power BJT amplifier to boost the signal output from our stable 2 GHz DRO, so that we can improve the system floor of the residual phase noise measurement test set.
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Thermal, Power and Electrical Engineering
A high power BJT has the high driving-current as well as low conduction-voltage merits, however, actually this device will with the minority carriers storage-up effect.
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Semiconductor Device Physics and Design
High power BJT device .
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Recent developments in nonlinear network design: Overview of integrated nonlinear microwave and millimeter‐wave circuits workshop
J.W. Bandler, R.M. Biernacki, Q. Cai, and S.H. Chen, Compression analysis of a high power BJT amplifier, Digest of the Third International Workshop on Inte- grated Nonlinear Microwave and Millimeterwave Circuits (INMMC’94), Gerhard-Mercator-University, Duisburg, Germany, October 5–7 …
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Equivalent circuit model for thermal resistance of deep trench isolated bipolar transistors
The use of multiple emitter fingers to avoid current inhomogeneities and hot spots in high power BJTs [5] results in mutual thermal coupling between emitters, leading to a higher overall device Rth, compared to an equivalent single emitter device [6] of same …
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Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits
Compression Analysis of a High Power BJT Amplifier .
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High-Q tuned active bandpass filter for wireless application
In perspective a high power BJT can be applied to increase a dynamic range of active tuned filter suggested for implementing in base station of mobile communication systems.
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Spectral characteristics of resonant link inverters
The upper maximum is set by the switch times and for the high power BJT devices considered should not exceed lOOkHz, less for higher current modules.