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Supplier: Elite Semiconductor Products, Inc.
Description: High Current Soft Recovery Fast Switching Plastic Rectifier
- VF: 1.3 volts
- IF: 6,000 mA
- VR: 50 volts
- IR: 0.01 to 1 mA
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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Features: Other
- Diode Type: PIN Diodes
- Diode Applications: Switching
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Supplier: Microchip Technology, Inc.
Description: and RGND. The analog switch terminals are Tx and Rx. Rx has integrated clamping diodes to RGND to protect the receiver against high voltages. Voltages greater than ±0.6V will start forward biasing the clamp diodes to RGND. The MD0101 can be considered as a normally
- Diode Applications: High Voltage
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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Features: Other
- Diode Type: PIN Diodes
- Diode Applications: Switching
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Supplier: Allied Electronics, Inc.
Description: Features: Low Forward Voltage Drop Low Leakage Current High Forward Surge Capability Solder Dip 260°C, 40 s Component in Accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications: For use in general purpose rectification of powersupplies, inverters, converters and freewheeling
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Fast switching Low leakage Low forward voltage drop High Current capability High surge capability High reliability
- VF: 1.3 volts
- IF: 8,000 mA
- IR: 0.01 to 0.15 mA
- trr: 150 ns
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Supplier: Richardson RFPD
Description: DIODE PHASE LEG POWER MODULE. Application: Anti-Parallel Diode, Uninterruptible Power Supply (UPS), Induction Heating, Welding Equipment, High Speed Rectifiers. Features: Ultra Fast Recovery Times, Soft Recovery Characteristics, High Blocking Voltage,
- IF: 400,000 mA
- RoHS Compliant: RoHS Compliant
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Supplier: Allied Electronics, Inc.
Description: Silicon Rectifier, 1 A Forward Current, 0.210 " H x 1.100 " Lead Length x 0.107 " T Low switching noise Low forward voltage drop Low thermal resistance High current capability High switching capability High surge capability High reliability
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Supplier: Allied Electronics, Inc.
Description: Ultra Fast Silicon Rectifier, 8 A Forward Current, TO-220 Package Type Ultrafast 50ns recovery time Low forward voltage Low leakage current High temperature glass passivated function The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in
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Supplier: Richardson RFPD
Description: 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft
- IF: 13,000 mA
- trr: 31 ns
- Features: Fast / Ultra Fast Recovery Rectifier, Other
- Diode Applications: Rectifier Diode
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Supplier: Infineon Technologies AG
Description: Bluetooth® LE MCU BTS50005-1LUA | Power PROFET™ + 12/24/48V | automotive smart high-side switch BTS7008-1EPA | PROFET™ +2 12V | automotive smart high-side switch TLE42694GM | OPTIREG™ linear voltage regulators (LDO) BAS40-06 | Schottky Diodes BTS7020-2EPA | PROFET™ +2 12V
- tON: 500,000 ns
- tOFF: 500,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Supplier: Infineon Technologies AG
Description: Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage Green Product (RoHS compliant) AEC Qualified Benefits High load current capability High inrush current capability High
- tON: 500,000 ns
- tOFF: 500,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Supplier: Infineon Technologies AG
Description: at undervoltage Wide operating voltage range Logic ground independent from load ground Benefits High voltage capability Benchmark energy robustness Potential Applications Body & Convenience Truck & Agricultural Vehicle Solutions (24V) Applications Automotive Belt starter
- tON: 250,000 ns
- tOFF: 270,000 ns
- Operating Ambient Temperature: -40 to 150 C
- Features: Other
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Supplier: Infineon Technologies AG
Description: Depletion Mode MOSFET BAS40-06 | Schottky Diodes BSS123N | Small signal/small power MOSFET ITS4140N | PROFET™ Industrial | Smart high-side switch IM523-S6A | Intelligent Power Modules (IPM) BSS169 | N-Channel Depletion Mode MOSFET BAS40-06 | Schottky Diodes BSS123N | Small
- tON: 100,000 ns
- tOFF: 150,000 ns
- Operating Ambient Temperature: -40 to 125 C
- Features: Other
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to
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Supplier: Littelfuse, Inc.
Description: The SLD6S unidirectional TVS Diode series is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against ESD, EFT, 10/1000 surge events and inductive load switching voltage transient events for severe Automotive Load Dump
- VR: 18 volts
- Clamping Voltage (VC): 29.2 volts
- VBR: 20 to 22.1 volts
- PD: 4,600,000 milliwatts
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Supplier: Microchip Technology, Inc.
Description: frequency High speed LVDS SPI typ 200MHz operation allows for fast device programming SPI group broadcast mode for fast data writing, Two-Wire I2C Interface for control and status reading Package: 13mmx13mm TFBGA with 0.8mm pitch
- Device Type: Beamformers, Transmitter
- Features: Other
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Supplier: Nexperia B.V.
Description: optimized for high-voltage, high-frequency industrial power inverter applications. Applications Power inverters such as Uninterruptible Power Supply (UPS) inverter EV charging converter Power Factor Correction (PFC) Induction heating Welding
- Features: Other
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Supplier: Littelfuse, Inc.
Description: immunity and low reverse recovery speeds (trr <=250ns). Furthermore, these devices eliminate the need for discrete anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power
- Polarity: N-Channel
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: HV9110 is a BiCMOS/DMOS single-output, pulse width modulator IC intended for use in high-speed, high-efficiency switch mode power supplies. It provides all the functions necessary to implement a single-switch current mode PWM, in any topology, with a minimum of external parts. Because
- Features: Other
- Package Type: SOIC / SOP
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Supplier: Allied Electronics, Inc.
Description: Silicon Diode, 200mA Forward Current, 4 V (Max.) Forward Voltage Fast switching Low leakage High current capability High surge capability High reliability
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Supplier: RS Components, Ltd.
Description: Diode Ultra Fast Recover 120V 3SOT-23
- trr: 50 ns
- Pin Count: 3
- Features: Other, SOT23
- Diode Applications: Rectifier Diode, Switching
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Supplier: Littelfuse, Inc.
Description: Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
- Polarity: N-Channel
- Features: Other
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Ultra fast switching speed Low forward voltage Fast recovery time Guard ring protected Small plastic SMD package Capability of
- VF: 450 to 0.45 volts
- IF: 1,000 mA
- VR: 25 volts
- IR: 1 mA
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Supplier: kTB Solutions
Description: kTB High ENR Noise Sources The KTB k2600 Series High ENR Noise Source embody excellent stability with temperature and voltage. They are well suited for receiver testing, noise figure measurements, and any application requiring broad bandwidth and fast switching
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Supplier: Vincotech GmbH
Description: Dual halfbridge Integrated DC capacitor Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor Fast intrinsic diode with low reverse recovery High blocking voltage with low on-resistance High speed switching
- Output Voltage: 1,200 volts
- Output Current: 55 amps
- Configuration: H-Bridge
- Features: Other / Specialty Technology
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Supplier: Frontier Electronics Corp.
Description: The Schottky diode (also known as a Schottky Barrier Diode) is a fast switching diode with a low forward voltage drop. There is a small voltage drop across a diode when current flows through it. Frontier SMD Schottky diodes have a
- VF: 0.38 to 0.92 volts
- IF: 1,000 to 20,000 mA
- VR: 20 to 200 volts
- IR: 0.2 to 1 mA
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Supplier: Vincotech GmbH
Description: Kelvin Emitter for improved switching performance Open Emitter configuration Temperature sensor Fast intrinsic diode with low reverse recovery High blocking voltage with low on-resistance High speed switching with low capacitance Convex shaped
- Output Voltage: 1,200 volts
- Output Current: 55 amps
- Configuration: H-Bridge
- Features: Other / Specialty Technology
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Supplier: Frontier Electronics Corp.
Description: The Schottky diode (also known as a Schottky Barrier Diode) is a fast switching diode with a low forward voltage drop. There is a small voltage drop across a diode when current flows through it. Frontier TH Schottky diodes have a forward
- VF: 0.45 to 0.95 volts
- IF: 1,000 to 30,000 mA
- VR: 20 to 200 volts
- IR: 0.01 to 0.5 mA
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Supplier: Skyworks Solutions, Inc.
Description: technology resulting in PIN diodes with tightly controlled I-region characteristics. The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching speed. For switch or
- Diode Type: PIN Diodes
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Supplier: Wolfspeed
Description: Wolfspeed's E-Series diodes are specifically designed to be robust and relibale in the harshest environments. As a result, the E-Series diodes are the industry's first 1200V SiC diodes to be automotive qualified and
- VRRM: 1,200 volts
- Features: Other
- Diode Type: Schottky Barrier Diodes
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Supplier: VAST STOCK CO., LIMITED
Description: Bipolar Transistors - BJT High voltage Fast Switching NPN Transistor with diode
- Features: Bipolar RF Transistors
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Damper diode fast, high-voltage Product overview: BY329-1500 from NXP Semiconductors is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and
- Diode Applications: Rectifier Diode
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Supplier: MACOM
Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low
- Frequency Range: 0 to 50,000 MHz
- Insertion Loss: 0 to 53 dB
- Isolation (Port to Port): 18 to 85 dB
- Impedance: 75 ohms
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Supplier: MACOM
Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low
- Frequency Range: 0 to 6,000 MHz
- Insertion Loss: 0.4 to 1.2 dB
- Isolation (Port to Port): 19 to 43 dB
- Impedance: 75 ohms
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fast recovery times make them great for high voltage switching power supplies where speed is standard. All devices are 100% tested at our facility in the USA. About VMI... VMI (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
voltage diode. The fast recovery time and 16kV blocking voltage makes it useful in high voltage running at 50kHz and higher. The diodes are hermetically sealed — making them suitable for industrial environments — small, and extremely reliable. The fast recovery times make (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
A, maximum forward voltage of 1V @ 50mA. The reverse recovery time is just 4ns, with reverse leakage current of 5μA @ 75V. Additionally, capacitance is 4pF at 0V, 1MHz. Key Features: Fast recovery diode for high-speed switching circuits SOD-80 Mini (read more)
Browse Diodes Datasheets for Win Source Electronics -
voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
. The fast recovery times make them great for high voltage switching power supplies where speed is standard. VMI is ISO9001:2015 certified and all of our products are made and 100% tested at our facility in Visalia, California, USA. (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
Browse Diodes Datasheets for Win Source Electronics -
Modern electronic systems require semiconductor components that deliver high efficiency, fast response, and reliable operation while minimizing power loss and space requirements. Traditional diodes may introduce higher voltage drops and switching losses, limiting performance in power (read more)
Browse Diodes Datasheets for Win Source Electronics -
comparison. Learn more about these power diodes that are well suited for fast-switching applications and applications that experience high ambient temperatures: http//www.nexperia.com/trench-schottky-rectifiers (read more)
Browse Diodes Datasheets for Nexperia B.V. -
-sensitive designs. Engineers can trust the MBRA340T3G for its fast recovery time of 200mA (Io), which allows it to operate efficiently in high-speed switching applications. The diode is housed in a compact SMA package, making (read more)
Browse Diodes Datasheets for Win Source Electronics -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high (read more)
Browse Diodes Datasheets for Win Source Electronics
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Indicates content that may require registration and/or purchase.
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On the Maximum Permissible Working Voltage of Commercial Power Silicon Diodes and Thyristors
Another example is given in Fig.5, where high voltage fast switching rectifier diodes (VRWM =1200 V), are compared this time, with the same sample of controlled- avalanche diode used for Fig.1.
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SCR-GTO Hybrid Voltage-Clamped High-Frequency Power Inverters with Quick-Response VVVF* Control Function
High - voltage fast - switching diodes (D21,D22) forms two power re- generating loops and provides state-voltage clamping effect.
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Technology of Gallium Nitride Crystal Growth
Power switches and diodes High breakdown voltage ; faster switching speed; higher efficiency; reduced reverse recovery time Higher reliability; lower on-resistance; greater power carrying capability; higher channel mobility .
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Scientific.Net: Materials Science
Abstract: The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated.
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Scientific.Net: Materials Science
Abstract: The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated.
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A novel soft-switching high-frequency transformer isolated three-phase AC-to-DC converter with low harmonic distortion
But this type of approach requires a HF switch and fast diodes with high voltage stress that increases with the reduced load.
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Three-phase single-stage ac/dc boost integrated series resonant converter
But this type of approach requires a HF switch and fast diodes with high voltage stress that increases with the reduced load.
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Study on Structures and Electrical Properties of 4H-SiC Floating-Junction SBDs
[3] Li Ma ,Yong Gao, Semi-super juction SiGe high voltage fast and soft recovery switching diodes ,Acta.Phys.Sin.,Vol.58, No.1, pp.530-534, 2009.
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1-26 GHz high power p-i-n diode switch
Vertical epitaxial GaAs p-i-n diode shows high breakdown voltage , fast switching speed, high linearity, and high isolation characteristics, so that it is widely used in high power, wide-band switching circuit[13- .
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Channel diode, a new fast switching power diode
This majority carrier device is capable of fast switching at high voltages where Schottky diodes cannot be used.