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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Diode Applications: Switching, Other
- Diode Type: PIN Diodes
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Supplier: Elite Semiconductor Products, Inc.
Description: High Current Soft Recovery Fast Switching Plastic Rectifier
- Diode Type: Step-recovery Diodes
- IF: 6000 mA
- IR: 0.0100 to 1 mA
- Lead Type: Axial Leads
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Supplier: SemiGen
Description: ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages. Features:
- Diode Applications: Switching, Other
- Diode Type: PIN Diodes
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Supplier: Richardson RFPD
Description: Features Ultra fast recovery times Soft recovery characteristics Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant Benefits High switching frequency Low switching losses
- IF: 75000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- RoHS Compliant: Yes
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Supplier: Microchip Technology, Inc.
Description: , and RGND. The analog switch terminals are Tx and Rx. Rx has integrated clamping diodes to RGND to protect the receiver against high voltages. Voltages greater than ±0.6V will start forward biasing the clamp diodes to RGND. The MD0101 can be considered as a
- Diode Applications: High Voltage
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Supplier: Richardson RFPD
Description: Package or Surface Mount D3PAK Package, Low Forward Voltage, High Blocking Voltage, Low Leakage Current. Benefits: Low Losses, Low Noise Switching, Cooler Operation, Higher Reliability Systems, Increased System Power Density.
- IF: 13000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 31 ns
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SCHOTTKY DIODE. Applications: Anti-Parallel Diode, Free Wheeling Diode, Snubber Diode, Uninterruptible Power Supply (UPS), Induction Heating, High Speed Rectifiers. Features: Ultrafast Recovery Times, Soft Recovery Characteristics,
- IF: 95000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 43 ns
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Supplier: Richardson RFPD
Description: Voltage, High Blocking Voltage, Low Leakage Current, Avalanche Energy Rated. Benefits: Low Losses, Low Noise Switching, Cooler Operation, Higher Reliability Systems, Increased System Power Density.
- IF: 30000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 25 ns
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Fast switching Low leakage Low forward voltage drop High Current capability High surge capability High reliability
- Diode Applications: Rectifier Diode
- Diode Type: Step-recovery Diodes
- IF: 8000 mA
- IR: 0.0100 to 0.1500 mA
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Supplier: Littelfuse, Inc.
Description: high-frequency power switching application such as switch mode power supply and DC-DC converters. Ultra-fast switching Low reverse leakage current High surge current capability Low forward voltage drop Single die in two-leaded, electrically isolated
- IF: 30000 mA
- IFSM: 200 amps
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- VF: 2.74 volts
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Supplier: Littelfuse, Inc.
Description: The SLD6S unidirectional TVS Diode series is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against ESD, EFT, 10/1000 surge events and inductive load switching voltage transient events for severe Automotive Load Dump
- Diode Type: Avalanche Diodes, Transient Voltage Suppressor Diodes (TVS)
- VR: 16 volts
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Supplier: Littelfuse, Inc.
Description: The SLD5S unidirectional TVS Diode series is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against ESD, EFT, 10/1000 surge events and inductive load switching voltage transient events for severe Automotive Load Dump
- Diode Type: Transient Voltage Suppressor Diodes (TVS)
- VR: 28 volts
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Supplier: Littelfuse, Inc.
Description: high-frequency power switching application such as switch mode power supply and DC-DC converters. Ultra-fast switching Low reverse leakage current High surge current capability Low forward voltage drop Common Cathode configuration in TO-220AB package
- IF: 20000 mA
- IFSM: 125 amps
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- VF: 1.3 volts
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Supplier: Infineon Technologies AG
Description: This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its very low capacitance and very low forward resistance make it suitable for a diversity of
- Diode Type: PIN Diodes, RF Diodes
- IF: 100 mA
- RoHS Compliant: Yes
- VR: 150 volts
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Supplier: Infineon Technologies AG
Description: This Infineon cost optimized RF PIN diode provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low resistance make it suitable for a diversity of switching applications,
- Diode Type: PIN Diodes, RF Diodes
- IF: 100 mA
- RoHS Compliant: Yes
- VR: 50 volts
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Supplier: Infineon Technologies AG
Description: This Infineon RF PIN diodes provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low forward resistance make it suitable for a diversity of switching applications,
- Diode Type: PIN Diodes, RF Diodes
- IF: 100 mA
- RoHS Compliant: Yes
- VR: 50 volts
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Supplier: Infineon Technologies AG
Description: This Infineon RF PIN diodes provides fast switching high-voltage handling capabilities, low power loss and is mostly suited for frequencies up to 3 GHz. Its low capacitance and low forward resistance make it suitable for a diversity of switching applications,
- Diode Type: PIN Diodes, RF Diodes
- IF: 100 mA
- RoHS Compliant: Yes
- VR: 50 volts
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Supplier: Linear Systems
Description: capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and ± voltage capability from gate to substrate. A polysilicon gate is featured for manufacturing reliability. For similar products
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Supplier: Elite Semiconductor Products, Inc.
Description: DESCRIPTION An axial leaded power rectIfier useful. In many switching applications. Particularly suited where very fast recovery and lowforward voltage are required.
- Diode Applications: Rectifier Diode
- Diode Type: Other
- IF: 6000 mA
- IR: 0.0050 to 0.1500 mA
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Supplier: Frontier Electronics Corp.
Description: in solar systems to prevent batteries from draining through the solar panel when there is little to no light. Schottky Diodes are also used in switched-mode power supplies as rectifiers due to their fast response time and high efficiency. Average rectified current range
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 1000 to 20000 mA
- IR: 0.2000 to 1 mA
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Supplier: Frontier Electronics Corp.
Description: systems to prevent batteries from draining through the solar panel when there is little to no light. Schottky Diodes are also used in switched-mode power supplies as rectifiers due to their fast response time and high efficiency. Average rectified current range from 1.0A
- Diode Type: Schottky Barrier Diodes
- IF: 1000 to 30000 mA
- IR: 0.0100 to 0.5000 mA
- RoHS Compliant: Yes
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Supplier: Nexperia B.V.
Description: hard?-?switching 650 V, 75 A IGBT is optimized for high?-?voltage, high?-?frequency industrial power inverter applications. Applications Power inverters such as Uninterruptible Power Supply (UPS) inverter EV charging converter Power Factor Correction (PFC) Induction heating
- Package Type: Other
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Ultra fast switching speed Low forward voltage Fast recovery time Guard ring protected Small plastic
- Diode Applications: Rectifier Diode, Switching, Protector, Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 1000 mA
- IR: 1 mA
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Supplier: Nexperia B.V.
Description: Planar Schottky barrier diode encapsulated in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Ultra fast switching speed Low forward voltage Fast recovery time Guard ring protected Small plastic
- Diode Applications: Rectifier Diode, Switching, Protector, Power Diode
- Diode Type: Schottky Barrier Diodes
- IF: 1000 mA
- IR: 1.00E6 mA
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Supplier: Vincotech GmbH
Description: Integrated by-pass diode Single-phase non-controlled rectifier Temperature sensor Designed for high switching frequency Low forward voltage drop Low reverse recovery time and recovery charge Convex shaped substrate for superior thermal contact Thermo-mechanical
- Output Current: 120 amps
- Output Voltage: 1200 volts
- Technology: Rectifier, Other / Specialty Technology
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Supplier: Vincotech GmbH
Description: Integrated DC capacitor Temperature sensor Single-phase non-controlled rectifier Integrated by-pass diode Designed for high switching frequency Low forward voltage drop Low reverse recovery time and recovery charge Convex
- Output Current: 60 amps
- Output Voltage: 1200 volts
- Technology: Rectifier, Other / Specialty Technology
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Supplier: Skyworks Solutions, Inc.
Description: -established silicon technology resulting in PIN diodes with tightly controlled I-region characteristics. The low capacitance and low resistance of the APD0505 through APD1520 diodes are ideal for switch applications that require insertion loss and fast switching
- Diode Type: PIN Diodes
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Supplier: Microchip Technology, Inc.
Description: The HV7358 is a 16-channel, 3-level high voltage ultrasound transmitter with built-in programmable beamformer. Each channel can generate pulses up to ±80V with a T/R switch and an active discharge back to 0V circuit. The output current can be programmed for 0.3A, 0.5A, 1.0A and
- Device Type: Beamformers, Transmitter
- IC Package Type: Other
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Supplier: Wolfspeed
Description: -Series family of diodes are ideal for on-board and off-board automotive applications and solar power inversion. Features 4th Generation SiC Merged PIN Schottky Technology Zero reverse recovery current Zero forward recovery voltage High
- Diode Type: Schottky Barrier Diodes
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Supplier: MACOM
Description: broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast
- Actuator Type: SPST
- Frequency Range: 0.0 to 50000 MHz
- Impedance: 75 ohms
- Insertion Loss: 0.1000 to 2 dB
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Supplier: Microchip Technology, Inc.
Description: HV9110 is a BiCMOS/DMOS single-output, pulse width modulator IC intended for use in high-speed, high-efficiency switch mode power supplies. It provides all the functions necessary to implement a single-switch current mode PWM, in any topology, with a minimum of external
- IC Package Type: SOIC / SOP, Other
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Supplier: RS Components, Ltd.
Description: Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical applications include very high frequency switched mode power supplies (SMPS), inverters, and freewheeling diodes. Maximum
- Diode Applications: Switching
- IF: 2000 mA
- Tj: -55 C
- VR: 800 volts
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Supplier: RS Components, Ltd.
Description: Vishay ultrafast recovery rectifiers have very fast reverse recovery times as low as 15ns and voltage levels as high as 1500V. Typical applications include very high frequency switched mode power supplies (SMPS), inverters, and freewheeling diodes.
- IF: 5000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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fast recovery times make them great for high voltage switching power supplies where speed is standard. All devices are 100% tested at our facility in the USA. About VMI... VMI (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
voltage diode. The fast recovery time and 16kV blocking voltage makes it useful in high voltage running at 50kHz and higher. The diodes are hermetically sealed — making them suitable for industrial environments — small, and extremely reliable. The fast recovery times (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
A, maximum forward voltage of 1V @ 50mA. The reverse recovery time is just 4ns, with reverse leakage current of 5μA @ 75V. Additionally, capacitance is 4pF at 0V, 1MHz. Key Features: Fast recovery diode for high-speed switching circuits SOD-80 Mini (read more)
Browse Diodes Datasheets for Win Source Electronics -
voltage diodes range from 2kV-20kV, 5mA-2000mA, 30ns-3000ns Trr. Ultra-fast reverse recovery times of 30ns maximum make them great for high voltage switching power supplies where speed is standard. Contact Us for more (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
. The fast recovery times make them great for high voltage switching power supplies where speed is standard. VMI is ISO9001:2015 certified and all of our products are made and 100% tested at our facility in Visalia, California, USA. (read more)
Browse High Voltage Diodes Datasheets for Voltage Multipliers, Inc. -
Diodes Incorporated 1N4148WSF-7 Overview Fast Switching Speed: Designed for high-speed switching applications with a fast reverse recovery time. Low Forward Voltage Drop: Efficient conduction minimizes power losses and (read more)
Browse Diodes Datasheets for Win Source Electronics -
comparison. Learn more about these power diodes that are well suited for fast-switching applications and applications that experience high ambient temperatures: http//www.nexperia.com/trench-schottky-rectifiers (read more)
Browse Diodes Datasheets for Nexperia B.V. -
-sensitive designs. Engineers can trust the MBRA340T3G for its fast recovery time of 200mA (Io), which allows it to operate efficiently in high-speed switching applications. The diode is housed in a compact SMA package, making (read more)
Browse Diodes Datasheets for Win Source Electronics -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high (read more)
Browse Diodes Datasheets for Win Source Electronics -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage (read more)
Browse Diodes Datasheets for DigiKey
More Information Top
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On the Maximum Permissible Working Voltage of Commercial Power Silicon Diodes and Thyristors
Another example is given in Fig.5, where high voltage fast switching rectifier diodes (VRWM =1200 V), are compared this time, with the same sample of controlled- avalanche diode used for Fig.1.
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SCR-GTO Hybrid Voltage-Clamped High-Frequency Power Inverters with Quick-Response VVVF* Control Function
High - voltage fast - switching diodes (D21,D22) forms two power re- generating loops and provides state-voltage clamping effect.
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Technology of Gallium Nitride Crystal Growth
Power switches and diodes High breakdown voltage ; faster switching speed; higher efficiency; reduced reverse recovery time Higher reliability; lower on-resistance; greater power carrying capability; higher channel mobility .
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Scientific.Net: Materials Science
Abstract: The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated.
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Scientific.Net: Materials Science
Abstract: The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated.
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A novel soft-switching high-frequency transformer isolated three-phase AC-to-DC converter with low harmonic distortion
But this type of approach requires a HF switch and fast diodes with high voltage stress that increases with the reduced load.
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Three-phase single-stage ac/dc boost integrated series resonant converter
But this type of approach requires a HF switch and fast diodes with high voltage stress that increases with the reduced load.
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Study on Structures and Electrical Properties of 4H-SiC Floating-Junction SBDs
[3] Li Ma ,Yong Gao, Semi-super juction SiGe high voltage fast and soft recovery switching diodes ,Acta.Phys.Sin.,Vol.58, No.1, pp.530-534, 2009.
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1-26 GHz high power p-i-n diode switch
Vertical epitaxial GaAs p-i-n diode shows high breakdown voltage , fast switching speed, high linearity, and high isolation characteristics, so that it is widely used in high power, wide-band switching circuit[13- .
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Channel diode, a new fast switching power diode
This majority carrier device is capable of fast switching at high voltages where Schottky diodes cannot be used.
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