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Supplier: ERSAELECTRONICS PTE. LTD.
Description: HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR Product overview: STD93003 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: SINGLE DIE ISOTOP PACKAGE. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
- rDS(on): 0.6 ohms
- Transistor Type: MOSFET, Power MOSFET
- Features: Other
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Supplier: Utmel Electronic Limited
Description: MOSFET >1200V High Voltage Power MOSFET
- rDS(on): 2 ohms
- QG: 105.99999999999999 nC
- PD: 890,000 milliwatts
- TJ: -55 to 150 C
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Supplier: Microchip Technology, Inc.
Description: HT0740 is a single channel, high voltage, low input current, isolated driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs, configured as high side switches, up to 400V. The HT0740 generates an independent DC isolated voltage
- Transistor Type: MOSFET
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: HT0440 is a dual, high voltage, isolated MOSFET driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs configured as bidirectional or unidirectional switches. It can drive N-channel MOSFETs as high-side switches up to 400V.
- Transistor Type: MOSFET
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Product overview: APT8020LLL from Advanced Power Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery
- Transistor Type: MOSFET
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Supplier: Utmel Electronic Limited
Description: High Voltage PNP Bipolar Transistor
- IC(max): 150 milliamps
- VCEO: 300 volts
- PD: 150 milliwatts
- TJ: 150 C
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Supplier: Microchip Technology, Inc.
Description: configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the supply voltage. In a typical high-side
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: MD1811 is a high speed, quad MOSFET driver designed to drive high voltage P and N-channel MOSFETs for medical ultrasound applications and other applications requiring a high output current for a capacitive load. The high-speed input stage of the
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 240558-MRF151G Packaging: Tray Voltage Rating: 125V Current Rating: 40A Frequency: 175MHz Current - Test: 500mA Gain: 16dB Transistor Polarity: 2 N-Channel (Dual) Common Source Voltage - Test: 50V Power - Output:
- Output Power: 300 watts
- Power Gain: 16 dB
- Operating Frequency: 175 MHz
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Nexperia B.V.
Description: PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: Nexperia B.V.
Description: PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540X Features and benefits High voltage Low collector-emitter saturation voltage VCEsat High
- Transistor Grade / Operating Range: Automotive
- Features: Other
- Polarity: PNP
- Package Type: SOT89
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Supplier: Win Source Electronics
Description: Manufacturer: Infineon Technologies Win Source Part Number: 59748-IRF6644 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V
- V(BR)DSS: 100 volts
- PD: 2,800 to 89,000 milliwatts
- TJ: -40 to 150 C
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 29495-FDMS8018 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds
- V(BR)DSS: 30 volts
- PD: 2,500 to 83,000 milliwatts
- TJ: -55 to 150 C
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 009773-AO6405 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On):
- V(BR)DSS: 30 volts
- PD: 2,000 milliwatts
- TJ: -55 to 150 C
- Transistor Type: MOSFET
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Supplier: Littelfuse, Inc.
Description: BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage
- VCES: 1,600 volts
- VCE(on): 6.2 volts
- IC(max): 28 amps
- Transistor Type: IGBT
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Supplier: Nexperia B.V.
Description: NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY Features and benefits High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board
- hfe: 200
- VCEO: 60 volts
- IC(max): 3,000 milliamps
- PD: 1,250 milliwatts
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Supplier: Littelfuse, Inc.
Description: BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage
- VCES: 3,000 volts
- VCE(on): 2.7 volts
- IC(max): 50 amps
- Transistor Type: IGBT
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Supplier: Toshiba America, Inc.
Description: Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc. Toshiba has decades of experience in the development and
- Transistor Grade / Operating Range: Automotive, Industrial
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Littelfuse, Inc.
Description: BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage
- VCES: 3,000 volts
- VCE(on): 2.7 volts
- IC(max): 28 amps
- Transistor Type: IGBT
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Supplier: Acme Chip Technology Co., Limited
Description: PTD HIGH VOLTAGE
- IDSS: 32,000 milliamps
- Transistor Type: MOSFET
- Features: Other, Shipping Tube / Stick Magazine
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Supplier: RS Components, Ltd.
Description: High-voltage MOSFET
- Transistor Type: MOSFET
- Features: Other
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Supplier: Littelfuse, Inc.
Description: The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings
- Polarity: N-Channel
- Features: Other
- Package Type: TO-263
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Supplier: Allied Electronics, Inc.
Description: N-Channel Enhancement Mode Power MOSFET, Continuous Drain Current 9 A @ +25 °C Ultra fast switching for operation at less than 100kHz High voltage: 500 V for off-line SMPS High current: 9 A for up to 350 W SMPS The NTE2393 is an N-channel enhancement mode power
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Supplier: Newark, An Avnet Company
Description: MOSFET, HIGH POWER MODULE, 6 N CHANNEL, 100V, 100A; Channel Type:Six N Channel; Continuous Drain Current Id:100Arms; Drain Source Voltage Vds:100V; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:6V; Product Range:- RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MOSFET, HIGH POWER MODULE, 6 N CHANNEL, 75V, 200A; Channel Type:Six N Channel; Continuous Drain Current Id:200Arms; Drain Source Voltage Vds:75V; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:6V; Power Dissipation:880W RoHS Compliant: Yes
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Supplier: Newark, An Avnet Company
Description: MOSFET, HIGH POWER MODULE, 6 N CHANNEL, 100V, 200A; Channel Type:Six N Channel; Continuous Drain Current Id:200Arms; Drain Source Voltage Vds:100V; Rds(on) Test Voltage:15V; Gate Source Threshold Voltage Max:6V; Product Range:- RoHS Compliant: Yes
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET High Voltage Power MOSFET
- Transistor Type: MOSFET
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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate
- V(BR)DSS: 60 volts
- rDS(on): 0.0065 ohms
- IDSS: 100,000 milliamps
- TJ: 150 C
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Supplier: Radwell International
Description: DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL, MOS-FET, VGS = 30V GUARANTEE, 800V, 4OHM, 4AMP, 80W HIGH-SPEED SWITCHING, LOW ON-RESISTANCE, LOW DRIVING POWER, HIGH VOLTAGE. FREE 2 YEAR RADWELL WARRANTY
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Supplier: Semikron, Inc.
Description: MOSFET Modules - Best in class switching performance SEMIKRON produces MOSFET (Metal Oxide Semiconductor Field Effect Transistor) modules in single switch, halfbridge, H-bridge and 6 PACK configuration in SEMITOP and SEMITRANS packages.The available MOSFET modules in the
- Output Voltage: 100 to 200 volts
- Output Current: 80 to 335 amps
- Configuration: H-Bridge, Half-Bridge
- Technology: MOSFET
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Supplier: Infineon Technologies AG
Description: for drop in replacement Designers who used this product also designed with TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRFR5305 | P-Channel Power MOSFET IRFR3710Z | N-Channel Power MOSFET TLE4251D | OPTIREG™ linear voltage regulators (LDO) IRFR5305 | P-Channel
- rDS(on): 0.014 ohms
- TJ: 175 C
- VGS(off): 1 to 3 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
- V(BR)DSS: 1,200 volts
- IDSS: 40,000 milliamps
- rDS(on): 0.08 ohms
- PD: 262,000 milliwatts
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Supplier: Infineon Technologies AG
Description: high side Lowest loop inductance High side Kelvin connection Benefits Compact & simple layout for a DC-DC Optimized layout Best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power
- rDS(on): 0.0035 to 0.0009 ohms
- TJ: -55 to 150 C
- VGS(off): 1.2 to 2 volts
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Infineon Technologies AG
Description: Automotive MOSFET BSR92P | Small signal/small power MOSFET BSP317P | Small signal/small power MOSFET IRLML2244 | P-Channel Power MOSFET IPP65R190CFD7A | Automotive MOSFET BSR92P | Small signal/small power MOSFET BSP317P | Small signal/small power
- rDS(on): 500 ohms
- TJ: -55 to 150 C
- VGS(off): 1.4 to 2.6 volts
- Transistor Type: MOSFET, Power MOSFET
Find Suppliers by Category Top
Featured Products Top
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Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
The ALD810025 by Advanced Linear Devices is a member of the ALD8100xx family of Supercapacitor Auto Balancing (SAB™) MOSFETs. It excels in voltage and leakage-current regulation for series-connected supercapacitors. By integrating one or more devices across (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Engineers face critical power management challenges including heat dissipation, switching efficiency, and circuit reliability in modern electronics. Components that fail under high current or voltage stress can cause system downtime (read more)
Browse IC Interfaces Datasheets for LIXINC Electronics Co., Limited -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a dual N-channel enhancement mode with matched transistor pairs, which reduces offset voltage and ensures differential thermal response. Key attributes of the device include high input impedance of 1014?, low input capacitance, and a negative current temperature coefficient. It (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
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Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
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Soft-Start Controller For Switching Power Supplies
driven by the power supply is capacitive, the problem is exaggerated due to the large transient currents required to charge the capacitive load. In extreme instances, the repeated high stress of start-up can result in catastrophic failures in the driver section, typically, the power MOSFET transistors
More Information Top
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Optoisolators simplify amplifier design
This amplifier employs only 2 optoisolators, 16 high voltage mosfets transistors , 2 low voltage ones, 6 linear IC’s and a score of passive components.
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In vacuum operating picosecond streak camera for x-ray diagnostics
The sweep ramp generator is made with 2 symmetrical circuits of 4 high voltage MOSFET transistor working in avalanche mode and powered under 3 Ky.
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http://www.iosrjournals.org/iosr-jece/papers/sicete-volume8/90.pdf
The other side of the transformer is driven by the integrated high voltage MOSFET transistor within the TOP 100 (V1).
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http://www.microsemi.com/document-portal/doc_download/14715-a-300w-mosfet-linear-amplifier-for-50-mhz
This paper has presented a 50 MHz 300W PEP linear amplifier using plastic packaged high voltage MOSFET transistors .
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Failures of MOSFETs in terrestrial power electronics due to single event burnout
For high voltage MOSFET transistors biased in the off state near it's rating the bipolar transistor is actually operating above it's Vceo rating and would not be able to sustain this voltage should it ever conduct and could suffer second breakdown.
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A novel single stage AC-to-DC full-bridge converter with magnetic amplifiers for input current shaping
In addition, instead of having a driver with a high pulse current capability for driving the transistor ( high voltage MOSFET ) in the conventional shaper, the magnetic amplifier driven with the low current source.
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Operational life testing of power transistors switching unclamped inductive loads
It should be noted that high voltage MOS- FET power transistors generally experience lower simultaneous voltage and current levels than their NPN bipolar counterparts due to the faster fall times associated with power MOSFET transistors.
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Advantage of the use of an added driver source lead in discrete Power MOSFETs
Senior Technical Marketing Engineer / Technical Marketing Manager for High Voltage MOSFETs Power Transistor Division STMicroelectronics Catania, Italy cristiano.stella@st.com / marc.laudani@st.com .
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Be carefull! (another sight on power supply issue)
lets assuming,ATX ones and from same manufacturer) are types of powerfull high voltage and MOSFET transistors and types of diodes Shottky, used for output voltage channels.
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Electrical Machines
For that reason, high - voltage MOSFET transistors are rarely used due to their large voltage drop.