Products & Services
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Supplier: Toshiba America, Inc.
Description: MOSFETs. Its main products include the mid- to high-voltage DTMOS Series with a VDSS of 500V to 800V and the low-voltage U-MOS Series with a VDSS of 12V to 250V.
- Transistor Grade / Operating Range: Industrial, Automotive
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Utmel Electronic Limited
Description: MOSFET >1200V High Voltage Power MOSFET
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: HT0740 is a single channel, high voltage, low input current, isolated driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs, configured as high side switches, up to 400V. The HT0740 generates an independent DC isolated voltage
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: HT0440 is a dual, high voltage, isolated MOSFET driver utilizing proprietary HVCMOS® technology. It is designed to drive discrete MOSFETs configured as bidirectional or unidirectional switches. It can drive N-channel MOSFETs as high-side switches up to 400V.
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: SINGLE DIE ISOTOP PACKAGE. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: -channel MOSFETs. In high-side configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the supply
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: Linear MOSFETs are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec).
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Microchip Technology, Inc.
Description: MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage
- Transistor Type: MOSFET
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Supplier: Acme Chip Technology Co., Limited
Description: PTD HIGH VOLTAGE
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: POWER MOS IV®. N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS.
- Package Type: TO-247, Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Richardson RFPD
Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
- Package Type: Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET High Voltage Power MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET PTD HIGH VOLTAGE
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET 1200V High Voltage Power MOSFET
- Transistor Type: MOSFET
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET >1200V High Voltage Power MOSFET
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 240558-MRF151G Packaging: Tray Voltage Rating: 125V Current Rating: 40A Frequency: 175MHz Current - Test: 500mA Gain: 16dB Transistor Polarity: 2 N-Channel (Dual) Common Source Voltage - Test
- Package Type: SOT3, Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, MOSFET RF Transistors
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Supplier: Rochester Electronics
Description: DUAL, HIGH VOLTAGE MOSFET
- Transistor Type: MOSFET
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Supplier: ROHM Semiconductor USA, LLC
Description: This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
- Package Type: TO-247
- Transistor Grade / Operating Range: Commercial
- Transistor Type: MOSFET
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.030GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Radwell International
Description: N-CHANNEL MOSFET TRANSISTOR, FAST SWITCHING SPEED, DESIGNED FOR HIGH VOLTAGE, HIGH SPEED APPLICATIONS, SUCH AS OFF-LINE SWITCHING POWER SUPPLIES, UPS, AC AND DC MOTOR CONTROLS, RELAY AND SOLENOID DRIVERS... FREE 2 YEAR RADWELL WARRANTY
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Supplier: Infineon Technologies AG
Description: OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block
- Package Type: Other
- Polarity: N-Channel, Other
- Transistor Type: MOSFET, Power MOSFET
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Supplier: Wolfspeed
Description: topologies. Features C3M SiC MOSFET technlogy High blocking voltage with low RDS(on) Easy to parallel and simple to drive Resistant to latch-up High gate resistance for drivers
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 016199-FDS8878 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On
- PD: 2500 milliwatts
- Package Type: SOT3, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Littelfuse, Inc.
Description: BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive
- Package Type: Other
- Transistor Type: IGBT
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 800W @ 128us/2%/50V ¦ 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing Required ¦ Specified For Use
- Operating Frequency: 1090 MHz
- Output Power: 800 watts
- Package Type: Other
- Power Gain: 17 dB
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Supplier: Solid State Devices, Inc.
Description: reputation has been built upon our unsurpassed technology and quality in the areas of high density/high power and high voltage discrete semiconductors and modules.
- Package Type: Other
- Polarity: N-Channel
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Family Name: SLA5201 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.sanken-ele.co.jp /en Manufacturer Package: 15-SIP Drain Source Voltage: 600V Introduction Date: June 04, 2008 ECCN: EAR99 Estimated EOL Date: 2024 Is this a common-used part?: Yes Popularity:
- Package Type: SOT3
- Packing Method: Shipping Tube / Stick Magazine, Other
- Polarity: P-Channel
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Supplier: Fuji Electric Corp. of America
Description: Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial, Automotive
- Transistor Type: Power MOSFET
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Supplier: Semikron, Inc.
Description: MOSFET Modules - Best in class switching performance SEMIKRON produces MOSFET (Metal Oxide Semiconductor Field Effect Transistor) modules in single switch, halfbridge, H-bridge and 6 PACK configuration in SEMITOP and SEMITRANS packages.The available MOSFET modules in the
- Configuration: Half-Bridge, H-Bridge
- Output Current: 80 to 335 amps
- Output Voltage: 100 to 200 volts
- Technology: MOSFET
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Supplier: Nexperia B.V.
Description: N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Low threshold voltage Very fast
- Package Type: Other
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 094961-MMBF5484 Packaging: Reel - TR Voltage Rating: 25V Current Rating: 5mA Frequency: 400MHz Transistor Polarity: N-Channel JFET Voltage - Test: 15V Noise Figure: 4dB Categories: Discrete
- Package Type: SOT3, SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
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Supplier: Linear Systems
Description: The SD210DE/214 and SST210/214 are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video and high-frequency applications. The SD214DE and SST214 are normally used for ±10-V analog switching. These MOSFETs utilize lateral construction to
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR512P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- Package Type: Other
- Polarity: PNP
- Transistor Grade / Operating Range: Commercial
- Transistor Type: Power MOSFET
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Supplier: Infineon Technologies AG
Description: N-channel enhancement mode small signal transistor for industrial and consumer applications in SOT-23-3 package The N-channel enhancement mode MOSFET BSS127I in SOT-23-3 package features VDS 600 V and RDS(on),max 500 Ohm. With an optimal price
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel, Other
- TJ: -55 to 150 C
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Supplier: ROHM Semiconductor GmbH
Description: 2SAR552P5 is Low saturation voltage and high speed switching transistor for low frequency amplifier.
- Package Type: Other
- Packing Method: Tape Reel
- TJ: -55 to 150 C
- Transistor Grade / Operating Range: Commercial
Find Suppliers by Category Top
Featured Products Top
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Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for New Yorker Electronics Co., Inc. -
Wolfspeed offers a new family of 1200 V Silicon Carbide (SiC) MOSFETs that are optimized for use in high power applications such as solar and energy storage systems, EV charging, Uninterruptible Power Supplies (UPS), motor drives, switched-mode power supplies, high-voltage (read more)
Browse Power MOSFET Datasheets for Richardson RFPD -
The ALD810025 by Advanced Linear Devices is a member of the ALD8100xx family of Supercapacitor Auto Balancing (SAB™) MOSFETs. It excels in voltage and leakage-current regulation for series-connected supercapacitors. By integrating one or more devices across (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Engineers face critical power management challenges including heat dissipation, switching efficiency, and circuit reliability in modern electronics. Components that fail under high current or voltage stress can cause system downtime (read more)
Browse IC Interfaces Datasheets for LIXINC Electronics Co., Limited -
In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt (read more)
Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a (read more)
Browse Transistors Datasheets for LIXINC Electronics Co., Limited -
Diodes Incorporated MMBT3904-7-F Overview Transistor Type: NPN - Efficient current amplification with a small base current controlling a larger collector current. Voltage Ratings: Vceo = 40V, Vcbo = 60V, Vebo = 6V (read more)
Browse Transistors Datasheets for Win Source Electronics -
The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a (read more)
Browse Transistors Datasheets for Win Source Electronics -
a dual N-channel enhancement mode with matched transistor pairs, which reduces offset voltage and ensures differential thermal response. Key attributes of the device include high input impedance of 1014?, low input capacitance, and a negative current temperature coefficient. It (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V.
Conduct Research Top
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What are MOSFETs? - Types and Features of High Voltage Super-Junction MOSFET
In the previous section, the product positioning of Si-MOSFETs, IGBTs and SiC-MOSFETs, which in recent years have become the most important power transistors, was reviewed, and super-junction MOSFETs (hereafter "SJ-MOSFETs"), which are representative of the latest high-voltage Si MOSFETs, were
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Considerations for Driving Power MOSFETs in High-Current, Switch Mode Regulators
The low on-resistance and high current carrying capability of power MOSFETs make them preferred switching devices in SMPS power supply design. However, designing with these devices is not as straightforward as with their bipolar counterparts. Unlike bipolar transistors, power MOSFETs have
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Soft-Start Controller For Switching Power Supplies
driven by the power supply is capacitive, the problem is exaggerated due to the large transient currents required to charge the capacitive load. In extreme instances, the repeated high stress of start-up can result in catastrophic failures in the driver section, typically, the power MOSFET transistors
More Information Top
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Optoisolators simplify amplifier design
This amplifier employs only 2 optoisolators, 16 high voltage mosfets transistors , 2 low voltage ones, 6 linear IC’s and a score of passive components.
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In vacuum operating picosecond streak camera for x-ray diagnostics
The sweep ramp generator is made with 2 symmetrical circuits of 4 high voltage MOSFET transistor working in avalanche mode and powered under 3 Ky.
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http://www.iosrjournals.org/iosr-jece/papers/sicete-volume8/90.pdf
The other side of the transformer is driven by the integrated high voltage MOSFET transistor within the TOP 100 (V1).
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http://www.microsemi.com/document-portal/doc_download/14715-a-300w-mosfet-linear-amplifier-for-50-mhz
This paper has presented a 50 MHz 300W PEP linear amplifier using plastic packaged high voltage MOSFET transistors .
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Failures of MOSFETs in terrestrial power electronics due to single event burnout
For high voltage MOSFET transistors biased in the off state near it's rating the bipolar transistor is actually operating above it's Vceo rating and would not be able to sustain this voltage should it ever conduct and could suffer second breakdown.
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A novel single stage AC-to-DC full-bridge converter with magnetic amplifiers for input current shaping
In addition, instead of having a driver with a high pulse current capability for driving the transistor ( high voltage MOSFET ) in the conventional shaper, the magnetic amplifier driven with the low current source.
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Operational life testing of power transistors switching unclamped inductive loads
It should be noted that high voltage MOS- FET power transistors generally experience lower simultaneous voltage and current levels than their NPN bipolar counterparts due to the faster fall times associated with power MOSFET transistors.
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Advantage of the use of an added driver source lead in discrete Power MOSFETs
Senior Technical Marketing Engineer / Technical Marketing Manager for High Voltage MOSFETs Power Transistor Division STMicroelectronics Catania, Italy cristiano.stella@st.com / marc.laudani@st.com .
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Be carefull! (another sight on power supply issue)
lets assuming,ATX ones and from same manufacturer) are types of powerfull high voltage and MOSFET transistors and types of diodes Shottky, used for output voltage channels.
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Electrical Machines
For that reason, high - voltage MOSFET transistors are rarely used due to their large voltage drop.