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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Plastic Case with Heatsink for Heat Dissipation Surge Overload Ratings to 400 Amperes Plastic package has Underwriters Laboratory Flammability Classification 94V-0
- Diode Applications: Rectifier Diode, High Voltage
- Diode Type: Other
- IF: 17500 mA
- Tj: -55 to 150 C
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Metal Case for Maximum Heat Dissipation Surge Overload Ratings to 400 amperes Thse bridges are on the UL Recognized Products List for currents of 50 amperes
- Diode Applications: Rectifier Diode, High Voltage
- Diode Type: Other
- IF: 25000 mA
- IR: 0.0100 mA
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Plastic Case With Heatsink for Heat Dissipation Surge Overload Ratings to 400 Amperes Plastic package has Underwriters Laboratory Flammability Classification 94V-0
- Diode Applications: Rectifier Diode, High Voltage
- Diode Type: Other
- IF: 7500 mA
- Tj: -55 to 150 C
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors,
- Diode Applications: Rectifier Diode
- IR: 10 mA
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Supplier: PUI - Projections Unlimited, Inc.
Description: High Voltage, High Current Ultra-fast Recovery Silicon Rectifier Diodes
- Diode Applications: Rectifier Diode
- VR: 1800 volts
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Supplier: Richardson RFPD
Description: HIGH VOLTAGE SILICON RECTIFIERS
- Diode Applications: Rectifier Diode
- IF: 25 mA
- trr: 100 ns
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Supplier: Elite Semiconductor Products, Inc.
Description: Features: Small size molded package PRV 3,000 to 12,000 volts 1.0 inch min. leads Low leakage
- Diode Applications: Rectifier Diode
- Diode Type: Step-recovery Diodes
- IF: 25 mA
- IR: 1.00E-3 to 0.0250 mA
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Supplier: Richardson RFPD
Description: High Voltage 50 mA Silicon Rectifiers|•Small size molded packages|•PRV 10,000 to 15,000 volts|•Fast recovery (R series)|•Avalanche characteristics|•Low leakage
- Diode Applications: Rectifier Diode
- IF: 5000 mA
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Supplier: Richardson RFPD
Description: High Voltage, High Current Ultra-Fast Recovery Silicon Rectifier Diodes
- IF: 300000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
- trr: 50 ns
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON RECTIFIER ASSEMBLY, HIGH VOLTAGE
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Supplier: Richardson RFPD
Description: Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient
- IF: 1000 mA
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Supplier: Toshiba America, Inc.
Description: Toshiba offers an extensive portfolio of diodes, including high-speed, low-loss Schottky-barrier diodes (SBDs) and ESD protection diodes for high-speed signal lines. Fabricated using silicon carbide (SiC), SiC SBDs provide high breakdown
- Diode Applications: Rectifier Diode, Protector
- Diode Type: Zener Diodes, Schottky Barrier Diodes, RF Diodes, Transient Voltage Suppressor Diodes (TVS)
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER ASSEMBLY, HIGH VOLTAGE TYPES 1N5477 THROUGH 1N5481
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to
- Diode Applications: Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to
- Diode Applications: Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to
- Diode Applications: Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to
- Diode Applications: Rectifier Diode
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, MODULE, HIGH VOLTAGE, 1N5597, 1N5600, 1N5603, TX AND TXV
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Supplier: Accuris
Description: SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, MODULE HIGH VOLTAGE, 1N5597, 1N5600, 1N5603, JAN, JANTX AND JANTXV
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Supplier: Kyocera Corporation
Description: A high-power device is a product for high-voltage/current application such as a stud/flat diode and thyristor. High-power devices are used for power plants, railways, ships, and large power sources that require quality products with high reliability. We have
- IGT: 150 to 400 mA
- ITSM: 1500 to 40000 amps
- TJ: -40 to 125 C
- VGT: 3 volts
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 086891-STPSC806D Packaging: Tube/Rail Mounting: Through Hole Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1
- Diode Type: Schottky Barrier Diodes, Other
- IR: 0.1000 mA
- Tj: -40 to 175 C
- VF: 1.7 volts
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Supplier: Littelfuse, Inc.
Description: . These components’ switching voltage VS are much lower than alternative Gas Discharge Tubes (GDT), and on-state voltage VT are much lower than alternative GDTs, Metal Oxide Varistors (MOV) and TVS Diodes. This Pxxx0S3N series are rated 3000A 8/20 µs, enabling equipment
- IH: 50000 mA
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Supplier: Littelfuse, Inc.
Description: Littelfuse manufactures 15A rms to 25A rms rectifiers with voltages rated from 200V to 1000V. Due to the electrically-isolate d TO-220 package, these rectifiers may be used in common anode or common cathode circuits using only one part type, thereby simplifying stock
- Diode Applications: Rectifier Diode
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Supplier: RS Components, Ltd.
Description: Versatile and high-efficiency Fast recovery power diodes in industry-standard package styles. Diode Configuration = Stud Cathode Maximum Continuous Forward Current = 40A Rectifier Type = Fast Recovery Number of Elements per Chip = 1 Peak Reverse Repetitive Voltage
- IF: 40000 mA
- Package Type: Other
- Rectifier Configuration / Technology: Fast / Ultra Fast Recovery Rectifier
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Supplier: Infineon Technologies AG
Description: Silicon Schottky Diode Summary of Features High current rectifier Schottky diode with extreme low VF drop (typ. 0.12V at IF = 10mA) For power supply applications For clamping and protection in low voltage applications For detection and step
- Diode Type: Schottky Barrier Diodes
- IF: 3000 mA
- RoHS Compliant: Yes
- VF: 0.6000 volts
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Supplier: Win Source Electronics
Description: Manufacturer: Rohm Semiconductor Win Source Part Number: 794014-SCS220KE2C Packaging: Tube Mounting Style: Through Hole Speed: No Recovery Time > 500mA (Io) Package: TO-247-3 Diode Type: Silicon Carbide Schottky Reverse Recovery Time (trr): 0ns Current
- Diode Type: Schottky Barrier Diodes, Other
- IR: 0.2000 mA
- Tj: 175 C
- VF: 1.6 volts
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Supplier: Win Source Electronics
Description: Manufacturer: STMicroelectronics Win Source Part Number: 038287-STPSC1006D Packaging: Tube/Rail Mounting: Through Hole Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1
- Life Cycle Stage: Other
- Package Type: TO-220, Other
- Tj: -40 to 175 C
- VF: 1.75 volts
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Supplier: RS Components, Ltd.
Description: A range of high current stud-mounting rectifier diodes from IXYS Westcode in stud cathode/lead anode configuration. Maximum Continuous Forward Current = 735A Diode Configuration = Stud Cathode Rectifier Type = High Voltage Number of Elements per Chip
- Applications: Rectifier Diode
- IF: 735000 mA
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Supplier: RS Components, Ltd.
Description: A Silicon Carbide (SiC) diode is an ultra-high performance power Schottky rectifier. â?¢ No or negligible reverse recovery. â?¢ Switching behaviour independent of temperature. â?¢ Dedicated to PFC applications. â?¢ High forward
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 10000 mA
- VR: 1200 volts
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Supplier: RS Components, Ltd.
Description: Thyristor/Diode configuration. 3500VRMS isolating voltage from the metal base. Industrial standard package INT-A-PAK. High surge capability Thyristor Type = SCR Maximum Gate Trigger Voltage = 4V Maximum Gate Trigger Current = 270mA Maximum Holding Current = 200mA Rated
- IGT: 270 mA
- IH: 200 mA
- IT(RMS): 140 amps
- Pin Count: 5
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Supplier: Win Source Electronics
Description: Manufacturer: IXYS Win Source Part Number: 225145-MCC501-14IO1 Packaging: Tray Mounting: Chassis Mount Voltage - Off State: 1400V Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Categories: Discrete Semiconductor Products Status: Obsolete
- TJ: -40 to 125 C
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Supplier: Littelfuse, Inc.
Description: High holding current -150mA min Specified 2/10 limiting voltage Integrated diodes for positive surge protection MSL: Level 1 - unlimited RoHS compliant and lead-free
- RoHS Compliant: Yes
- Thyristor Type: Silicon Controlled Rectifier (SCR), Sidac
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Supplier: Infineon Technologies AG
Description: 34 mm Rectifier Diode Module with 2200 V in solder bond technology Rectifier Diode 34 mm Eco Block 2200 V, 226 A module for phase control in solder bond technology. This is the second generation with increase current rating. If you need additional features or higher
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Littelfuse, Inc.
Description: Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
- Package Type: Other
- Polarity: N-Channel
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Supplier: MACOM
Description: MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors,
- Package Type: TO-3, TO-39, Other
- Polarity: NPN
- Transistor Grade / Operating Range: Other
- Transistor Type: Power BJT Transistors
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. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
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Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage (read more)
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DT-670 Series silicon diodes offer better accuracy over a wider temperature range than any previously marketed silicon diodes. Conforming to the Curve DT-670 standard voltage versus temperature response curve, sensors within the DT-670 series are interchangeable, and for many applications do not (read more)
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The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
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standard optocouplers and opto-diodes. Utilizing the photo-sensitive nature of silicon, VMI has created a line of optocouplers and opto-diodes available in 10kV to 25kV versions and can be assembled in series configuration for additional standoff voltage capability (read more)
Browse Optocouplers Datasheets for Voltage Multipliers, Inc. -
Part Number: 1N4148W-7-F Category: Discrete Semiconductor Products, Diodes, Rectifiers - Single Description: General-purpose diode, designed for high-speed switching applications. Package: SOD-123 (read more)
Browse Diodes Datasheets for Win Source Electronics -
Utilizing the photo-sensitive nature of silicon, VMI has created a line of hermetically sealed, high-reliability, high-voltage optocouplers and opto-diodes in versions that can be assembled in series (read more)
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Taking advantage of the photo-sensitive nature of silicon, VMI offers a 20kV version to its existing line of high voltage, high-reliability opto-diodes. With visible silicon and a clear plastic package, infrared light can be used to manipulate the opto-diode reverse (read more)
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Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
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Datasheet for A1750A62FFFC08, DWDM analog forward-path(40MHz-860MHz) module. Connector FC/APC. Optical power 8 mW.. A1750A62FFFC08 .pdf : 1.000.000 datasheets ...
High Voltage Silicon Rectifier Diodes .
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Electronic Manufacture - Electronic Manufacture Manufacturers, Suppliers (Page 10)
Electronics Co., Ltd. can manufacturer all kinds of high voltage silicon stacks, industrial special silicon stacks, high voltage silicon rectifier diodes , high voltage silicon stacks of microwave oven, high voltage...
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Electronic Manufacture - Electronic Manufacture Manufacturers, Suppliers (Page 9)
Electronics Co., Ltd. can manufacturer all kinds of high voltage silicon stacks, industrial special silicon stacks, high voltage silicon rectifier diodes , high voltage silicon stacks of microwave oven, high voltage...
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3 TYPICAL INSTALLATIONS BY l-T-E CIRCUIT BREAKER CO., USING IR HIGH VOLTAGE SILICON POWER RECTIFIER DIODES .
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High‐power bipolar picosecond pulse generation using optically activated traveling wave generator
The two switches used in the experiments consist in two high - voltage silicon rectifier diodes designed to support bias voltage of 5 kV.
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Energy storage capacitors
In high - voltage silicon rectifier diode applications which require seriesing of many rectiher diorles. it is necnsary that each rectifier diode be shunted with a capacitor and resistor to compensate for the system parameters whirh woulrl eventually de- 6tmy the rectifier assembly…
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Flexible 50-Ohm high-voltage nanosecond pulse generator
High - voltage silicon rectifier diodes sealed in a semi-translucent glass package and embedded in a coaxial line are used as switch elements.
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Generators and applicators for nanosecond pulsed electric field
The PCSSs are high - voltage silicon rectifier diodes in a semi-translucent glass axial package and can sustain up to 20 kV in static configuration.
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Kilovolt, Nanosecond, and Picosecond Electric Pulse Shaping by Using Optoelectronic Switching
The PCSSs are high - voltage silicon recti- fier diodes in a semitranslucent glass axial package and can sus- tain up to 20 kV in static configuration.
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drop wire - offers from drop wire manufacturers, suppliers, exporters & wholesalers
[ Related Keywords : rectifier diode, high voltage diode , rectifier silicon assembly, bridge rectifier ] .