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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- Diode Applications: Other
- Diode Type: Schottky Barrier Diodes, RF Diodes
- IF: 1 mA
- IR: 2.00E-4 mA
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode
- Applications: Detector, Mixer, Switching
- Package Type: Other
- VF: 0.3200 volts
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters.
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: Dual Diode - Series Pair (Tee) Configuration: The MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The high
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: Single Diode Configuration: MACOM's MA4E2037 single, MA4E2039 anti-parallel pair and MA4E2040 series tee are gallium arsenide beam lead Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: Richardson RFPD
Description: and extremely low parasitics. The high carrier mobility of gallium arsenide results in lower series resistance than a silicon Schottky with equivalent capacitance, resulting in lower noise figure and conversion loss. The diodes are fully passivated with silicon nitride
- Diode Type: Schottky Barrier Diodes, RF Diodes
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode
- Applications: Detector, Mixer, Switching
- Package Type: Other
- VF: 0.5000 volts
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode
- Applications: Detector, Mixer, Switching
- Package Type: Other
- VF: 0.4000 volts
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer
- Applications: Detector, Mixer
- IF: 110 mA
- Life Cycle Stage: Other
- Package Type: SOT143, Other
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and
- Applications: Detector, Mixer
- IF: 110 mA
- Life Cycle Stage: Other
- Package Type: SOT23, Other
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-2 00V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching
- Diode Applications: High Voltage
- Diode Type: Schottky Barrier Diodes
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Supplier: Crane Aerospace & Electronics
Description: Dividers, Couplers, Hybrids, Modulators, Beamformers, Phase Shifters and Antenna Elements Low noise RF and Microwave sources VCOs, DROs, Synthesizers, Crystal Oscillators and complex Oscillator and Multiplier Assemblies Frequency conversion products Up and Down
- Frequency Band: 10 to 26500 MHz
- Input VSWR: 2 :1
- Limiter Type: Conventional Limiter
- Package Type: Connectorized
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Diode Type: Schottky Barrier Diodes
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Diode Type: Schottky Barrier Diodes
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Supplier: Microchip Technology, Inc.
Description: The MIC2289C is a pulse-width modulated (PWM), boost-switching regulator that is optimized for constant-current white LED driver applications. The MIC2289C features an internal Schottky diode and three levels of output overvoltage protection providing a small size and efficient DC/DC
- Diode Type: Schottky Barrier Diodes
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Supplier: Littelfuse, Inc.
Description: Very low Vf Extremely low switching losses Low Irm values Improved thermal behavior High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching
- Diode Type: Schottky Barrier Diodes
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Supplier: RS Components, Ltd.
Description: Diode Schottky 30V 2A Low Noise MCPH6 - Discrete Semiconductors - Rectifier & Schottky Diodes
- Applications: Rectifier Diode
- IF: 2000 mA
- Package Type: Other
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Supplier: RS Components, Ltd.
Description: UHF Schottky Diode Low Noise SOT-23 - Discrete Semiconductors - Rectifier & Schottky Diodes
- Diode Applications: Rectifier Diode
- Diode Type: Schottky Barrier Diodes
- IF: 10 mA
- VR: 7 volts
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Supplier: Microchip Technology, Inc.
Description: and Schottky diode MIC2605 operates at 1.2MHz MIC2606 operates at 2MHz Programmable soft start Stable with small size ceramic capacitors High efficiency Low input and output ripple <10µA shutdown current UVLO Output over-voltage and over-temperature protection -40°C to +125°C
- IC Package Type: Other
- Operating Temperature: -40 to 125 C
- Quiescent Current (IQ): 0.0042 amps
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to a wide
- Package Type: Other
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Supplier: Universal Semiconductor, Inc.
Description: Features Resistors and capacitors and Schottky diodes on a single chip Surface mount SOIC/SSOP/TSSOP package Custom resistors & capacitors avilable ESD protection in excess of 5000 volts Applications Low pass filter EMI/RFI reduction Power supply filter Reduce noise on
- Capacitance: 33 pF
- Capacitance Tolerance: 10
- Configuration: Resistor, Capacitor, Diode (RCD) Network
- Features: ESD Protection
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Supplier: Infineon Technologies AG
Description: 650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-14 package 650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-14
- Driver Type: High-side Gate Driver, Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 2.5 amps
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Supplier: Infineon Technologies AG
Description: NPN Silicon RF Transistor Summary of Features For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in
- Package Type: SOT23, Other
- Packing Method: Tape Reel, Other
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Supplier: Marki Microwave LLC
Description: NLTL-6794SM is a MMIC non-linear transmission line (NLTL) based comb generator. This NLTL offers excellent phase noise performance over a low 100MHz to 1 GHz input frequency range with output tones beyond 30 GHz. NLTL-6794SM is fabricated with GaAs Schottky diode-based
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Supplier: Renesas Electronics Corporation
Description: between the controller and drivers in high phase count scalable applications. The common COMP signal, which is usually seen in conventional cascaded configuration, is not required; this improves noise immunity and simplifies the layout. Furthermore, the ISL6617 provides low part count
- IC Package Type: Other
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Supplier: RS Components, Ltd.
Description: diodes, fixed frequency operation, programmable current limit and low noise operation characteristics. Controller Type = Boost Controller, Flyback Controller, Inverting Number of Outputs = 1 Maximum Switching Frequency = 1000 kHz Mounting Type = Surface Mount Package Type = DFN
- IC Package Type: Other
- Regulator Category: Switching Regulator, Other
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Supplier: RS Components, Ltd.
Description: diodes, fixed frequency operation, programmable current limit and low noise operation characteristics. Regulator Function = Boost, Inverting Maximum Output Current = 2A Number of Outputs = 1 Line Regulation = 0.05 %/V Load Regulation = -0.6 % Mounting Type = Surface Mount
- Signal Converter Package: Printed Circuit Board (PCB)
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Supplier: ValueTronics International, Inc.
Description: input power (< 1 minute): 1 W Noise: < 50 uV Output polarity: negative Input connector: APC-7 The Agilent 8470B 18 GHz Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It
- Frequency Range: 18000 MHz
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They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost packaging techniques. All diodes are 100 percent DC tested and deliver tight parameter distribution, which minimizes performance variability (read more)
Browse Diodes Datasheets for Skyworks Solutions, Inc. -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high (read more)
Browse Diodes Datasheets for Win Source Electronics -
STMicroelectronics' 100 V trench diodes are designed for both industrial and automotive applications. The package offering from SOD123Flat to DPAK provide flexible solutions while supporting higher power density designs and improving overall application performance. The product (read more)
Browse Power Supplies Datasheets for DigiKey -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
- Communications - Test and Measurement Description: The MADZ-011002 Single junction, MADZ-011003 anti-parallel pair, MADZ-011004 reverse tee and MADZ-011005 unconnected anti-parallel pair are gallium arsenide flip-chip THz Schottky barrier diodes. These (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
The AMM-7473PC is a high-linearity, low noise distributed amplifier that provides +25dBm output power across a 400 MHz to 26.5GHz band and up to 16GHz gain. Ideal for radar and satellite communications, the amplifier can serve either as a linear signal amplifier or as a saturated driver amplifier for H- or S-diode mixers. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
The MBRA340T3G is an excellent choice for engineers looking to improve circuit efficiency and reliability. With high current capacity, low voltage drop, and fast recovery, this Schottky diode is designed for high-performance applications, ensuring optimal operation in a variety of demanding fields. (read more)
Browse Diodes Datasheets for Win Source Electronics -
a large electrolytic capacitor and small ceramic capacitors. The ripple noise of the output is additionally reduced with a foil capacitor on the load side of the HV module. A schottky-type diode is used as rectifier on the 12 V input and an NTC-thermistor protects the circuit against high inrush (read more)
Browse Power Supplies Datasheets for Daitron Co., Ltd.
Conduct Research Top
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
noise figure, a high power and low loss limiter is required. The purpose of this application note is to document the test methodology employed and test results achieved measuring the small-signal gain recovery time of a balanced LNA with an integrated Schottky diode limiter and high power load
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Performance Of A Single Ended Schottky Diode Mixer At 345 GHZ As Low Noise Mixer And Frequency Doubler For 690 GHz
The first part of this paper describes the design and construction of a low noise Schott- ky diode waveguide mixer, operating in the 320 -370 GHz band.
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Semimetal-semiconductor junctions for low noise zero-bias rectifiers
ABSTRACT — ErAs and InAlGaAs heterojunctions promise to act as low noise Schottky diode .
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Advanced MMIC components for Ka-band communications systems. A survey
Low noise Schottky diode upconverter and downconverter are also available in 0.25" MESFETtechnology with burriedn' layer.
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Low Losses Wide Band Diplexer for MM Wave Heterodyne Receiver
An ancooled very low noise Schottky diode receiver front-end for middle atmospheric ozone and carbon monoxide measurements.
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Advanced MMIC components for Ka-band communications systems. A survey
Low noise Schottky diode upconverter and downconverter are also available in 0.25 pm MESFETtechnologywith burriedn* layer.
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A 15 element focal plane array for 100 GHz
…Observatory at the Univer- sity of Massachusetts in the area of receiver in- strumentation for millimeter and submillimeter radio astronomy This work has involved receiv- ers from 80 to 700 GHz and includes the lowest noise Schottky diode mixers reported for both…
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Stokes‐parameter detection experimental results for polarization modulation coherent systems with low bit‐rate‐to‐linewidth ratio
C. R. Predmore, A. V. Raisanen, N. R. Erickson, P. F. Gold- smith, and J. L. R. Marrero, “A Broad-Band, Ultra- Low Noise Schottky Diode Mixer Receiver from 80-110 GHz,” IEEE Trans.
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Performance of MMIC components at cryogenic temperatures
C. R. Predmore, A. V. Raisanen, N. R. Erickson, P. F. Gold- smith, and J. L. R. Marrero, “A Broad-Band, Ultra- Low Noise Schottky Diode Mixer Receiver from 80-110 GHz,” IEEE Trans.
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Overview of High Power CTS Experiments in Magnetically Confined Plasmas
For millimeter-wave gyrotron CTS receivers, low noise Schottky diode mixers are commercially available in efficient waveguide packaging.
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Molecular beam millimeter sidebands Fourier transform spectrometer (MB-MMSBFT)
The sensitivity can be enhanced using low noise Schottky diodes mixers.