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Supplier: Broadcom Inc.
Description: The HSMS-281x family are General purpose, low flicker (1/f) noise schottky diodes.VBR=20 V, CT=1.2pF, RD=15 Ohms, Vf @ 1 mA=410 mV
- VF: 0.4 volts
- IF: 1 mA
- VR: 15 volts
- IR: 0.0002 mA
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode
- VF: 0.25 volts
- Applications: Detector, Mixer, Switching
- Features: Modulation, Other, Schottky Barrier Diodes
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Supplier: Broadcom Inc.
Description: General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like detectors or mixers, please refer to HSMS-282X. For low flicker (1/F) noise
- VF: 0.4 volts
- IF: 1 mA
- IR: 0.0002 mA
- Tj: 150 C
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Supplier: RS Components, Ltd.
Description: UHF Schottky Diode Low Noise SOT-23
- Features: Other, Schottky, Schottky Barrier Diodes
- Applications: Rectifier Diode, Switching
- RoHS Compliant: RoHS Compliant
- Package: SOT23
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Supplier: Richardson RFPD
Description: Single Diode Configuration: The diodes have low noise figure through 26 GHz. Low Barrier diodes for minimum LO drive. Stripline and microstrip mixers from 100 MHz Upconverters.
- Operating Frequency: 0 to 6,000 MHz
- Features: Other, RF Diodes, Schottky Barrier Diodes, Single
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode
- VF: 0.6 volts
- Applications: Detector, Mixer, Switching
- Features: Modulation, Other, Schottky Barrier Diodes
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Supplier: SemiGen
Description: SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode
- VF: 0.475 volts
- Applications: Detector, Mixer, Switching
- Features: Modulation, Other, Schottky Barrier Diodes
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Supplier: Microchip Technology, Inc.
Description: The Schottky-Rectifier-200V is a family of 200V high voltage schottky diodes available in various package options Additional Features Ultrafast recovery times Soft recovery Low leakage current Avalanche energy rated Higher switching frequency Low switching losses
- Applications: High Voltage
- Features: Other, Schottky Barrier Diodes
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Supplier: Infineon Technologies AG
Description: This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer
- VF: 0.25 to 0.32 volts
- IF: 110 mA
- VR: 4 volts
- Applications: Detector, Mixer
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Supplier: Microchip Technology, Inc.
Description: The MIC2289C is a pulse-width modulated (PWM), boost-switching regulator that is optimized for constant-current white LED driver applications. The MIC2289C features an internal Schottky diode and three levels of output overvoltage protection providing a small size and efficient DC/DC
- Features: Other, Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 7V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 7V, Diode and
- Tj: -55 C
- Features: Other, Schottky Barrier Diodes
- Applications: Rectifier Diode
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result
- Features: Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) Product overview: BAT15-03W from Siemens is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic
- Applications: Rectifier Diode
- Features: Schottky Barrier Diodes
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 7.0 V, SOT-23. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 7.0 V, SOT-23, Diode
- Tj: -55 C
- Features: Other, Schottky Barrier Diodes
- Applications: Rectifier Diode
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Supplier: Rochester Electronics
Description: Schottky Diode 7V Low Noise
- Features: Other, Schottky Barrier Diodes
- RoHS Compliant: RoHS Compliant
- Package: TO-92
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Supplier: Allied Electronics, Inc.
Description: Low Power Schottky Barrier Diode, PDIP Package, 5 V Supply Voltage Improved line receiving characteristics High noise immunity Its operation from very slow edges.
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Supplier: Littelfuse, Inc.
Description: Very low Vf Extremely low switching losses Low Irm values Improved thermal behavior High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching
- Features: Other, Schottky Barrier Diodes
- Package: TO-220
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Supplier: Microchip Technology, Inc.
Description: Microchip offers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality solutions to a wide
- Features: Other, Rectifier Diode
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Supplier: Microchip Technology, Inc.
Description: The MIC2605/6 is a 1.2MHz/2MHz, PWM DC/DC boost switching regulator. High power density is achieved with the MIC2605/6's internal 40V/0.5A switch and Schottky diode, allowing it to power large loads in a tiny footprint. The MIC2605/6 implements constant frequency 1.2MHz/2MHz PWM
- Quiescent Current (IQ): 0.0042 amps
- Operating Temperature: -40 to 125 C
- Features: Other
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Supplier: Broadcom Inc.
Description: The new low current, high speed AlGaAs emitter manufactured with a unique diffused junction, has the virtue of fast rise and fall times at low drive currents. These unique characteristics enable this device to be used in an RS-232-C interface ground loop isolation and improved common
- Isolation Voltage: 3,750 volts
- Rise Time: 0.04 µs
- Collector Emitter Breakdown Voltage: 3 volts
- Operating Temperature: -40 to 85 C
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Supplier: Richardson RFPD
Description: The CHM2378a is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and very low 1/f noise. This circuit is manufactured with the
- RF Frequency Range: 76,000 to 77,000 MHz
- LO Frequency Range: 76,000 to 77,000 MHz
- IF Frequency Range: 0 to 100 MHz
- Conversion Loss: 7.5 dB
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Supplier: Universal Semiconductor, Inc.
Description: Features Resistors and capacitors and Schottky diodes on a single chip Surface mount SOIC/SSOP/TSSOP package Custom resistors & capacitors avilable ESD protection in excess of 5000 volts Applications Low pass filter EMI/RFI reduction Power supply filter Reduce noise on
- Resistance Range: 47 ohms
- Tolerance: -10 to 10 +/- %
- Capacitance: 33 pF
- Capacitance Tolerance: 10
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Supplier: Marki Microwave LLC
Description: NLTL-6273SM is a MMIC non-linear transmission line (NLTL) based comb generator. This NLTL offers excellent phase noise performance over a low 0.7 to 5 GHz input frequency range with output tones to 24 GHz. NLTL-6273SM is fabricated with GaAs Schottky diode based varactors
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Supplier: Marki Microwave LLC
Description: NLTL-6794SM is a MMIC non-linear transmission line (NLTL) based comb generator. This NLTL offers excellent phase noise performance over a low 100MHz to 1 GHz input frequency range with output tones beyond 30 GHz. NLTL-6794SM is fabricated with GaAs Schottky diode-based
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Supplier: Marki Microwave LLC
Description: NLTL-6273 is a MMIC non-linear transmission line (NLTL) based comb generator. This NLTL offers excellent phase noise performance over a low 0.7 to 5 GHz input frequency range with output tones beyond 40 GHz. NLTL-6273 is fabricated with GaAs Schottky diode based varactors
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Supplier: Infineon Technologies AG
Description: Tuners, FM, and RF modems. Designers who used this product also designed with BAT15-02LRH | RF Mixer and Detector Schottky Diode TLE8250GVIO | Automotive CAN transceivers BSL202SN | Small signal/small power MOSFET BAT15-02LRH | RF Mixer and Detector Schottky Diode
- Features: Other
- Package Type: SOT23
- Packing Method: Tape Reel
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Supplier: Allied Electronics, Inc.
Description: place of the MC14069UB hex inverter for enhanced noise immunity to ""square up"" slowly changing waveforms. Supply Voltage Range = 3.0 Vdc to 18 Vdc Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load over the Rated Temperature Range Double
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Supplier: Richardson RFPD
Description: The Analog Devices AD7541A is a low cost, high performance 12-bit monolithic multiplying digital-to-analog converter. It is fabricated using advanced, low noise, thin film on CMOS technology and is available in a standard 18-lead DIP and in 20-terminal surface mount packages.
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Supplier: Infineon Technologies AG
Description: Uninterruptible power supplies (UPS) Designers who used this product also designed with SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module IDWD40G120C5 | CoolSiC™ Schottky Diodes IDH08G65C6 | CoolSiC™ Schottky Diodes 1ED3321MC12N | Gate driver ICs BAT165 |
- Peak Output Current: 5.4 amps
- Supply Voltage: 3 to 15 volts
- Propagation Delay: 45 ns
- Driver Type: High-side Gate Driver
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Supplier: Infineon Technologies AG
Description: IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAT54-06 | Schottky Diodes IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAT54-06 | Schottky Diodes IPW60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAT54-06 | Schottky Diodes
- Output Power: 40 watts
- Operating Temperature: -25 to 130 C
- Configuration / Function: Flyback Converter
- Features: Other
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Supplier: ValueTronics International, Inc.
Description: Agilent 8470B 18 GHz Low-Barrier Schottky Diode (LBSD) detector has been widely used for many years in a variety of applications including leveling and power sensing. It offers good performance and ruggedness.
- Frequency Range: 18,000 MHz
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Supplier: Renesas Electronics Corporation
Description: controller and drivers in high phase count scalable applications. The common COMP signal, which is usually seen in conventional cascaded configurations, is not required; this improves noise immunity and simplifies the layout. Furthermore, the ISL6617A provides low part count and
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: the controller and drivers in high phase count scalable applications. The common COMP signal, which is usually seen in conventional cascaded configuration, is not required; this improves noise immunity and simplifies the layout. Furthermore, the ISL6617 provides low part count and
- Features: Other
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Featured Products Top
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They include low barrier diodes and zero-bias detectors that combine Skyworks advanced semiconductor technology with low-cost packaging techniques. All diodes are 100 percent DC tested and deliver tight parameter distribution, which minimizes performance variability (read more)
Browse Diodes Datasheets for Skyworks Solutions, Inc. -
. Another type of diode is the Schottky diode, constructed from a metal-to-metal semiconductor contact and featuring a lower forward voltage drop than that of traditional P-N junction diodes. They can be used as a low-loss rectifier, but the reverse leakage current of these (read more)
Browse Diodes Datasheets for ASAP Semiconductor LLC -
Key Features: Low Forward Voltage: Typical forward voltage drop of just 0.32V at 10mA ensures high efficiency in power-sensitive applications. Fast Switching Speed: Designed for quick operation, crucial for high (read more)
Browse Diodes Datasheets for Win Source Electronics -
STMicroelectronics' 100 V trench diodes are designed for both industrial and automotive applications. The package offering from SOD123Flat to DPAK provide flexible solutions while supporting higher power density designs and improving overall application performance. The product (read more)
Browse Power Supplies Datasheets for DigiKey -
Vishay's 16 Gen 3 1,200 V silicon-carbide (SiC) Schottky diodes feature a merged PIN Schottky (MPS) design. They also combine high surge current robustness with low forward-voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power (read more)
Browse General Purpose Diodes Datasheets for DigiKey -
- Communications - Test and Measurement Description: The MADZ-011002 Single junction, MADZ-011003 anti-parallel pair, MADZ-011004 reverse tee and MADZ-011005 unconnected anti-parallel pair are gallium arsenide flip-chip THz Schottky barrier diodes. These (read more)
Browse Schottky Diodes Datasheets for Richardson RFPD -
-sensitive applications. WIN SOURCE provides SS16 Schottky diodes featuring low forward voltage drop, fast switching capability, and compact package designs for efficient electronic circuits. The metal-semiconductor junction structure enables rapid switching performance, making SS16 diodes suitable for (read more)
Browse Diodes Datasheets for Win Source Electronics -
The MBRS540T3G, manufactured by ON Semiconductor, is a high-performance Schottky barrier rectifier diode designed for high-frequency and energy-sensitive applications. With its low forward voltage drop and high surge current handling capacity, it offers engineers (read more)
Browse Diodes Datasheets for Win Source Electronics -
The AMM-7473PC is a high-linearity, low noise distributed amplifier that provides +25dBm output power across a 400 MHz to 26.5GHz band and up to 16GHz gain. Ideal for radar and satellite communications, the amplifier can serve either as a linear signal amplifier or as a saturated driver amplifier for H- or S-diode mixers. (read more)
Browse RF Amplifiers Datasheets for Marki Microwave LLC -
The MBRA340T3G is an excellent choice for engineers looking to improve circuit efficiency and reliability. With high current capacity, low voltage drop, and fast recovery, this Schottky diode is designed for high-performance applications, ensuring optimal operation in a variety of demanding fields. (read more)
Browse Diodes Datasheets for Win Source Electronics
Conduct Research Top
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
noise figure, a high power and low loss limiter is required. The purpose of this application note is to document the test methodology employed and test results achieved measuring the small-signal gain recovery time of a balanced LNA with an integrated Schottky diode limiter and high power load
More Information Top
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Performance Of A Single Ended Schottky Diode Mixer At 345 GHZ As Low Noise Mixer And Frequency Doubler For 690 GHz
The first part of this paper describes the design and construction of a low noise Schott- ky diode waveguide mixer, operating in the 320 -370 GHz band.
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Semimetal-semiconductor junctions for low noise zero-bias rectifiers
ABSTRACT — ErAs and InAlGaAs heterojunctions promise to act as low noise Schottky diode .
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Advanced MMIC components for Ka-band communications systems. A survey
Low noise Schottky diode upconverter and downconverter are also available in 0.25" MESFETtechnology with burriedn' layer.
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Low Losses Wide Band Diplexer for MM Wave Heterodyne Receiver
An ancooled very low noise Schottky diode receiver front-end for middle atmospheric ozone and carbon monoxide measurements.
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Advanced MMIC components for Ka-band communications systems. A survey
Low noise Schottky diode upconverter and downconverter are also available in 0.25 pm MESFETtechnologywith burriedn* layer.
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A 15 element focal plane array for 100 GHz
…Observatory at the Univer- sity of Massachusetts in the area of receiver in- strumentation for millimeter and submillimeter radio astronomy This work has involved receiv- ers from 80 to 700 GHz and includes the lowest noise Schottky diode mixers reported for both…
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Stokes‐parameter detection experimental results for polarization modulation coherent systems with low bit‐rate‐to‐linewidth ratio
C. R. Predmore, A. V. Raisanen, N. R. Erickson, P. F. Gold- smith, and J. L. R. Marrero, “A Broad-Band, Ultra- Low Noise Schottky Diode Mixer Receiver from 80-110 GHz,” IEEE Trans.
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Performance of MMIC components at cryogenic temperatures
C. R. Predmore, A. V. Raisanen, N. R. Erickson, P. F. Gold- smith, and J. L. R. Marrero, “A Broad-Band, Ultra- Low Noise Schottky Diode Mixer Receiver from 80-110 GHz,” IEEE Trans.
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Overview of High Power CTS Experiments in Magnetically Confined Plasmas
For millimeter-wave gyrotron CTS receivers, low noise Schottky diode mixers are commercially available in efficient waveguide packaging.
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Molecular beam millimeter sidebands Fourier transform spectrometer (MB-MMSBFT)
The sensitivity can be enhanced using low noise Schottky diodes mixers.
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