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Supplier: Skyworks Solutions, Inc.
Description: Power Amplifier Module for Quad-Band GSM / GPRS / EDGE / TD-SCDMA / TDD LTE / HD-FDD LTE
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT), Other
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Supplier: Skyworks Solutions, Inc.
Description: SkyBlue™ Power Amplifier Module for LTE Band 42
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT), Other
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Supplier: Skyworks Solutions, Inc.
Description: PAM for LTE FDD Band 7
- Amplifier Type: Power Amplifier
- Frequency Range: 2500 to 2570 MHz
- Package Type: Surface Mount Technology (SMT), Other
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Supplier: Skyworks Solutions, Inc.
Description: PAM for LTE FDD Band 7
- Amplifier Type: Power Amplifier
- Frequency Range: 2500 to 2570 MHz
- Package Type: Surface Mount Technology (SMT), Other
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Supplier: Broadcom Inc.
Description: The ACPM-9017 is a fully matched 10-pin surface mount Power Amplifier Module developed for LTE Band 17 and Band 12 It meets stringent linearity power up to LTE (MPR=0 dBm) 27.5 dBm. ACPM-9017 also features CoolPAM circuit technology which supports 2 power
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Nominal Impedance: 50 Ohms
- Output Power( P1dB): 27.5 dBm
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Supplier: Broadcom Inc.
Description: The ACPM-9013 is a fully matched 10-pin surface mount Power Amplifier Module developed for LTE Band 13 and Band 14. It meets stringent linearity power up to LTE (MPR=0 dBm) 27.5 dBm. ACPM-9013 also features CoolPAM circuit technology which supports 2 power
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Nominal Impedance: 50 Ohms
- Output Power( P1dB): 27.5 dBm
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Supplier: Broadcom Inc.
Description: The ACPM-9011 is a fully matched 10-pin surface mount Power Amplifier Module developed for LTE Band 11/21 and it meets stringent linearity power up to LTE (MPR=0 dBm) 27.5 dBm. ACPM-9011 also features CoolPAM circuit technology which supports 2 power modes –
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Nominal Impedance: 50 Ohms
- Output Power( P1dB): 27.5 dBm
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Supplier: Broadcom Inc.
Description: The ACPM-9002 is a fully matched 10-pin surface mount Power Amplifier Module developed for UMTS Band 2, LTE Band 25 and meets stringent linearity power up to UMTS 28.5dBm, LTE (MPR=0dBm) 27.5dBm. ACPM-9002 also features CoolPAM circuit technology which supports 2
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 1850 to 1910 MHz
- Maximum Gain: 14.5 dB
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Supplier: Qorvo
Description: Qorvo's QPA9501 is high power amplifier module containing an internally matched 3-stage PA, compensated DC biasing circuit and output power detector. This PA module is optimized for the WiFi bands from 5.1-5.9GHz and hence well suited for LTE-U applications. It provides
- Amplifier Type: Power Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 5100 to 5900 MHz
- Maximum Gain: 32 dB
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Supplier: Richardson RFPD
Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 716 to 960 MHz
- Maximum Gain: 18 dB
- Maximum Operating Voltage: 3.1 volts
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Supplier: Texas Instruments
Description: Seamless Transition Buck/Boost Converter for LTE and HSPA RF Power Amplifiers 12-DSBGA -30 to 85
- Features: Other
- IC Package Type: Other
- Input Voltage (VIN): 2.7 to 5.5 volts
- Operating Temperature: -30 to 85 C
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA,
- Amplifier Type: Low Noise Amplifier
- Applications: Mobile / Wireless Systems
- Frequency Range: 4000 to 6000 MHz
- Maximum Gain: 13.7 dB
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Supplier: DigiKey
Description: 5GHZ LTE-U POWER AMPLIFIER
- Amplifier Type: Low Noise Amplifier, Power Amplifier
- Frequency Range: 4900 to 5900 MHz
- Maximum Gain: 36 dB
- Maximum Operating Voltage: 5.5 volts
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Supplier: Richardson RFPD
Description: NewEdge Signal Solutions ETX115 is a 2W Power Amplifier module delivering high gain, high power across a wide RF transmit bandwidth. This 2W compact module can be used for a wide range of applications including LTE Signals for use in tactical communication, test and
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Supplier: Wolfspeed
Description: of frequencies from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L-band or low S-band (<2.7 GHz). Additionally, the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average
- Operating Frequency: 2700 MHz
- Output Power: 60 watts
- Package Type: Other
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Supplier: Wolfspeed
Description: 39.5 dBm GaN on SiC Power Amplifier Module, 3700-3980 MHz The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat
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Supplier: Boonton Electronics Corporation
Description: and WiMAX, LTE, UMTS. The high dynamic range and very fast sampling rate make the 4540 series also ideal to measure RF telecommunication amplifiers. Both Boonton 4541 and 4542 Power meters, have built in step calibrators for highest accuracy allowing calibrating sensors over
- Bandwidth: 9900 to 4.00E10 Hz
- Display Type: Digital
- Form Factor: Bench / Free-Standing
- Maximum Channels: 2
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Supplier: Rochester Electronics
Description: AFSC5G26D37 - Power Amplifier Module for LTE and 5G
- Life Cycle Stage: Other
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Infineon Technologies AG
Description: BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Richardson RFPD
Description: CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied in a
- Operating Frequency: 2300 to 2700 MHz
- Output Power: 20 watts
- Package Type: Other
- Power Gain: 12.5 dB
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Supplier: Richardson RFPD
Description: CGH27015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9 GHz WiMAX and BWA amplifier applications. The unmatched
- Package Type: Other
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Supplier: QUALCOMM, Incorporated
Description: As one of the most cutting-edge mobile processors ever created, the Qualcomm® Snapdragon™ 820 processor with X12 LTE supports the ultimate in connectivity, graphics, photography, power and battery efficiency. See firsthand how we’ve designed the 820 from the ground up to be
- Clock Speed: 2200 MHz
- Data Bus: 64 Bit
- Serial Interfaces: USB
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Supplier: Nokia
Description: existing BBUs, allowing operators to preserve their investment while enhancing their networks. The digital BBU fully supports LTE/LTE-A and is ready for vRAN/5G. As well, the RF modules enable better scaling, feature introduction, improved reliability, and cost reduction. This is achieved by
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Supplier: Qorvo
Description: The QM57508 is a Transmit / Receive Module containing LB and MB 2G Power Amplifiers, 16 Tx / Rx Switch Ports, 3 Antenna and 2 Coupled Output Ports. The amplifiers supports GSM and EDGE Class 12 covering GSM850/GSM900 and DCS1800/PCS1900 bands. The MB 2G portion also supports
- Form Factor / Package: Surface Mount Technology (SMT), Other
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Supplier: ValueTronics International, Inc.
Description: cycle of a frequency variation. Engineers use RF signal generators as test equipment, mostly to measure responses of filters, amplifiers, and electrical components. Additional Features: Frequency range: 9 kHz to 3.2 GHz or 6 GHz High output power: >+18 d
- Device Type: Generator
- Generator Type: Signal, Sweep
- Maximum Frequency Range: 6000 MHz
- Minimum Frequency Range: 6000 MHz
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Supplier: Infineon Technologies AG
Description: data rates up to 78 Mbps. On-chip power amplifier and low-noise amplifiers are included for both the 2.4 and 5GHz bands plus an internal +20dBm Bluetooth power amplifier. Infineon’s AIROC™ CYW43022 is available as a module from AzureWave in our partner network. Wi
- Features: RoHS Compliant
- IC Package Type: Other
- TJ: -20 to 70 C
- Technology: Bluetooth
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Supplier: TOP-electronics USA
Description: the VNA Sandbox together, to get started straight out-of-the-box. (It also costs less than buying them separately!) This VNA is ideal for measuring all kinds of micro-circuits like antennas, attenuators, amplifiers etc. Its frequency range includes most popular telecom bands such as
- Frequency Range: 4.00E6 kHz
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Supplier: ValueTronics International, Inc.
Description: characterize wideband signals up to 40 MHz bandwidths. The USB form factor moves the processing power to the PC of your choice, so you decide when you need more processing power or memory. The optional tracking generator enables gain/loss measurements for quick tests of filters,
- Frequency Range: 3.00E6 kHz
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includes power amplifier blocks operating in the mid and high bands, a silicon controller containing the MIPI® RFFE interface, RF band switches, mid- and high-band antenna switches, bi-directional couplers and integrated filters to support Bands 1, 2, 3, 7, 34, 39, 40 and 41. Packaged in a 62-pad (read more)
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EuMIC 2012 detailed author index
C Low Idle Current LTE Power Amplifier with 2nd Harmonic Control (EuMIC19-1 .
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A dual mode GaAs HBT power amplifier for LTE applications
So LTE power amplifiers have been rarely reported.
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Efficient Sensor Interfaces, Advanced Amplifiers and Low Power RF Systems
Kaymaksut E, Reynaert P (2014) 3.4 A dual-mode transformer-based Doherty LTE power amplifier in 40 nm CMOS.
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Compact Power Amplifier for LTE Mobile Terminals Using Coupling Variation Reduction Technique
[9] Y. Li, R. Zhu, D. Prikhodko, Y. Tkachenko, “ LTE power amplifier module design: Challenges and trends” IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov 2010.
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Author details: K
60% High-Efficiency 3G LTE Power Amplifier with Three- level Delta Sigma Modulation Assisted By Dual Supply Injection .
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A variable supply, (2.3-2.7)GHz linear power amplifier module for IEEE 802.16e and LTE applications using E-mode pHEMT technology
We believe this is the highest power achieved currently for a broadband Wimax/ LTE power amplifier that with 3.3V and 5V operation capability.
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RFMD Commences LTE Shipments To Samsung
RFMD supplies the industry’s broadest portfolio of 3G and 4G LTE power amplifier solutions, ranging from single-mode/single-band components to complete multimode/multi-band front end reference designs.
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Book of abstracts
Low Idle Current LTE Power Amplifier with 2nd Harmonic Control .
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EuMIC 2012 abstract cards
Low Idle Current LTE Power Amplifier with 2nd Harmonic Control .
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Detailed author index
C LTE Power Amplifier for Envelope Tracking Polar Transmitters Chou, Mei-Fen .