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Supplier: Skyworks Solutions, Inc.
Description: 2.5 to 2.7 GHz Mobile WiMAX/LTE Power Amplifier Module
- Minimum Gain: 31 dB
- Maximum Gain: 31 dB
- Minimum Operating Voltage: 3 volts
- Maximum Operating Voltage: 4.2 volts
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Supplier: Skyworks Solutions, Inc.
Description: SkyBlue™ Power Amplifier Module for LTE Band 42
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT)
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Supplier: Broadcom Inc.
Description: The ACPM-9004 is a fully matched 10-pin surface mount Power Amplifier Module developed for LTE Band 3 and Band 4. This module meets stringent linearity power up to LTE (MPR=0dBm) 27.5dBm and features CoolPAM circuit technology which supports 2 power modes –
- Frequency Range: 1,710 to 1,785 MHz
- Output Power( P1dB): 27.5 dBm
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
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Supplier: Skyworks Solutions, Inc.
Description: Power Amplifier Module for Quad-Band GSM / GPRS / EDGE / TD-SCDMA / TDD LTE / HD-FDD LTE
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT)
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Supplier: Broadcom Inc.
Description: The ACPM-9040 is a fully matched 10-pin surface mount Power Amplifier Module developed for LTE Band 40 and it meets stringent linearity power up to LTE (MPR=0 dBm) 28.4 dBm. ACPM-9040 also features CoolPAM circuit technology which supports 2 power modes –
- Output Power( P1dB): 28.4 dBm
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
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Supplier: Broadcom Inc.
Description: The ACPM-9020 is a fully matched 10-pin surface mount Power Amplifier Module developed for LTE Band 20 and it meets stringent linearity power up to LTE (MPR=0 dBm) 27.5 dBm. ACPM-9020 also features CoolPAM circuit technology which supports 2 power modes –
- Output Power( P1dB): 27.5 dBm
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
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Supplier: Skyworks Solutions, Inc.
Description: SkyBlue™ Power Amplifier Module for Automotive Applications – LTE Band 42
- Features: Other
- Amplifier Type: Power Amplifier
- Package Type: Surface Mount Technology (SMT)
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Supplier: Broadcom Inc.
Description: The Avago ACPM-9007 is a fully matched 10-pin surface mount power amplifier (PA) module developed for LTE Band 7. The module meets stringent linearity power up to LTE (MPR=0 dBm) 27.5 dBm. The 2mm × 2.5mm form-factor package is self contained, incorporating 50-ohm
- Nominal Impedance: 50 Ohms
- Applications: Mobile / Wireless Systems
- Amplifier Type: Power Amplifier
- RoHS Compliant: RoHS Compliant
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Supplier: Qorvo
Description: Qorvo's QPA9501 is high power amplifier module containing an internally matched 3-stage PA, compensated DC biasing circuit and output power detector. This PA module is optimized for the WiFi bands from 5.1-5.9GHz and hence well suited for LTE-U applications. It provides
- Frequency Range: 5,100 to 5,900 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Output Power( P1dB): 33 dBm
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Supplier: Texas Instruments
Description: Seamless Transition Buck/Boost Converter for LTE and HSPA RF Power Amplifiers 12-DSBGA -30 to 85
- Operating Temperature: -30 to 85 C
- Output Voltage (Volt): 0.6 to 4.2 volts
- Input Voltage (VIN): 2.7 to 5.5 volts
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IC AMP LTE 1.452-2.69GHZ 6XSON Product overview: LTE3401HX from NXP Semiconductors is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement
- Supply Voltage (VS): 1.5 volts
- Operating Temperature: -40 C
- Pin Count: 6
- Features: Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: IC AMP LTE 617MHZ-960MHZ 6XSON Product overview: LTE3401LX from NXP Semiconductors is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement
- Supply Voltage (VS): 1.5 volts
- Operating Temperature: -40 C
- Pin Count: 6
- Features: Other
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Supplier: Richardson RFPD
Description: The SKY77778-21 Power Amplifier Module (PAM) is a fully matched, 10-pad surface mount (SMT) module developed for LTE applications. The module includes broadband coverage of LTE FDD Band 7 and TDD Bands 38, 40, 41 and AXGP Band in a compact 2.0 mm x 2.5 mm package.
- Frequency Range: 2,300 to 2,690 MHz
- Minimum Operating Voltage: 3 volts
- Maximum Operating Voltage: 3 volts
- Features: Other
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Supplier: Infineon Technologies AG
Description: Low noise amplifier MMICs for mobile cellular systems: UMTS, HSPA/+ and LTE Infineon 3G/4G LNA MMICs (Monolithic Microwave Integrated Circuit) are designed to optimize the sensitivity of mobile cellular systems. This allows to extend the area of highest data traffic for UMTS, HSPA,
- Frequency Range: 3,400 to 3,800 MHz
- Maximum Gain: 18 dB
- Noise Figure: 1.3 dB
- Nominal Operating Current: 0.005 amps
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Supplier: Richardson RFPD
Description: NewEdge Signal Solutions ETX115 is a 2W Power Amplifier module delivering high gain, high power across a wide RF transmit bandwidth. This 2W compact module can be used for a wide range of applications including LTE Signals for use in tactical communication, test and
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Supplier: Qorvo
Description: range. This amplifier is able to achieve −50 dBc ACLR at +27 dBm output power using 20 MHz LTE signal. The TQP9421 integrates two high performance amplifier stages onto a module to allow for a compact system design and requires very few external components for operation.
- Frequency Range: 2,110 to 2,170 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 35.5 dBm
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Supplier: Wolfspeed
Description: 39.5 dBm GaN on SiC Power Amplifier Module, 3300-3800 MHz The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with advanced matching and biasing networks on a multilayer laminate substrate with advanced heat
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Supplier: DigiKey
Description: 5GHZ LTE-U POWER AMPLIFIER
- Frequency Range: 4,900 to 5,900 MHz
- Minimum Gain: 36 dB
- Maximum Gain: 36 dB
- Output Power( P1dB): 33 dBm
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: POWER AMPLIFIER MODULE LTE Product overview: ACPM-5007 from Broadcom is a Rf Amplifier for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement
- Features: Other
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Supplier: Wolfspeed
Description: from UHF through 2.7 GHz. The CGHV27060MP makes for an excellent transistor for pulsed applications at UHF, L-band or low S-band (<2.7 GHz). Additionally, the transistor is well suited for LTE micro-base-station amplifiers in the power class of 10 to 15-W average power in
- Output Power: 60 watts
- Operating Frequency: 2,700 MHz
- Features: HEMT, Other
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Supplier: Wolfspeed
Description: efficiency in a small 6.5-mm x 4.4-mm plastic surface-mount (SMT) package. The typical performance plots in the data sheet are derived with CGHV35060MP matched into a 3.1 to 3.8-GHz high-power amplifier.
- Output Power: 60 watts
- Operating Frequency: 2,700 to 3,800 MHz
- Features: HEMT, Other
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Supplier: DigiKey
Description: 5GHZ LTE-U POWER AMPLIFIER
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Supplier: Boonton Electronics Corporation
Description: WiMAX, LTE, UMTS. The high dynamic range and very fast sampling rate make the 4540 series also ideal to measure RF telecommunication amplifiers. Both Boonton 4541 and 4542 Power meters, have built in step calibrators for highest accuracy allowing calibrating sensors over their
- Bandwidth: 9,900 to 40,000,000,000 Hz
- Maximum Channels: 2
- Operating Temperature: 0 to 50 C
- Display Digits: 7 or More Digits
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Supplier: Infineon Technologies AG
Description: BGA7L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 716 MHzto 960 MHz and operates from1.5 V to 3.3 V supply voltage.The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA. In bypass mode the LNA provides an insertion loss of 5.2 dB. The BGA5H1BN6
- Features: Other
- Standards and Certifications: RoHS Compliant
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Supplier: Richardson RFPD
Description: CN0417 is a small USB powered RF power amplifier optimized for 2400 MHz operation. The amplifier typically provides 20 dB of gain through its RF band of operation, boosting signals for various communication protocols such as ISM, MC-GSM, W-CDMA, TD-SCDMA and LTE. It
- Category: Development Board
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: Seamless Transition Buck/Boost Converter for LTE and HSPA RF Power Amplifiers 12-DSBGA -30 to 85 Product overview: LM3269TLX/NOPB from Texas Instruments is a Step-Down DC-DC Converter IC for stable power rails, DC-DC conversion, battery-powered electronics, automotive
- Output Voltage (Volt): 4.2 volts
- Operating Temperature: -30 C
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Supplier: Richardson RFPD
Description: The LTC5582 is a 40MHz to 10GHz RMS responding power detector. It is capable of accurate power measurement of an AC signal with wide dynamic range, from –60dBm to 2dBm depending on frequency. The power of the AC signal in an equivalent decibel-scaled value is precisely converted
- Frequency Range: 40 to 10,000 MHz
- dBm Measurement Range: 2.0000000000000004 dBm
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Supplier: QUALCOMM, Incorporated
Description: 64-QAM Peak Download Speed 600 Mbps Peak Upload Speed 150 Mbps Supported Cellular Technologies LTE FDD LTE TDD LTE-U LWA LTE Broadcast WCDMA (DB-DC-HSDPA, DC-HSUPA) TD-SCDMA CDMA 1x EV-DO GSM/EDGE Multi SIM LTE Dual SIM Dual Standby (DSDS) Next-generation Calling
- Clock Speed: 2,200 MHz
- Data Bus: 64 Bit
- Serial Interface: USB
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Supplier: Nokia
Description: allowing operators to preserve their investment while enhancing their networks. The digital BBU fully supports LTE/LTE-A and is ready for vRAN/5G. As well, the RF modules enable better scaling, feature introduction, improved reliability, and cost reduction. This is achieved by
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Supplier: ValueTronics International, Inc.
Description: variation. Engineers use RF signal generators as test equipment, mostly to measure responses of filters, amplifiers, and electrical components. Additional Features: Frequency range: 9 kHz to 3.2 GHz or 6 GHz High output power: >+18 dBm Small level uncertainty: <0.5 dB Low phase noise:
- Minimum Frequency Range: 6,000 MHz
- Maximum Frequency Range: 6,000 MHz
- Device Type: Generator
- Generator Type: Signal, Sweep
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More Information Top
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EuMIC 2012 detailed author index
C Low Idle Current LTE Power Amplifier with 2nd Harmonic Control (EuMIC19-1 .
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A dual mode GaAs HBT power amplifier for LTE applications
So LTE power amplifiers have been rarely reported.
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Efficient Sensor Interfaces, Advanced Amplifiers and Low Power RF Systems
Kaymaksut E, Reynaert P (2014) 3.4 A dual-mode transformer-based Doherty LTE power amplifier in 40 nm CMOS.
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Compact Power Amplifier for LTE Mobile Terminals Using Coupling Variation Reduction Technique
[9] Y. Li, R. Zhu, D. Prikhodko, Y. Tkachenko, “ LTE power amplifier module design: Challenges and trends” IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Nov 2010.
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Author details: K
60% High-Efficiency 3G LTE Power Amplifier with Three- level Delta Sigma Modulation Assisted By Dual Supply Injection .
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A variable supply, (2.3-2.7)GHz linear power amplifier module for IEEE 802.16e and LTE applications using E-mode pHEMT technology
We believe this is the highest power achieved currently for a broadband Wimax/ LTE power amplifier that with 3.3V and 5V operation capability.
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RFMD Commences LTE Shipments To Samsung
RFMD supplies the industry’s broadest portfolio of 3G and 4G LTE power amplifier solutions, ranging from single-mode/single-band components to complete multimode/multi-band front end reference designs.
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Book of abstracts
Low Idle Current LTE Power Amplifier with 2nd Harmonic Control .
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EuMIC 2012 abstract cards
Low Idle Current LTE Power Amplifier with 2nd Harmonic Control .
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Detailed author index
C LTE Power Amplifier for Envelope Tracking Polar Transmitters Chou, Mei-Fen .
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