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Description: circuit components with an emphasis on techniques such as even and odd mode analysis and the use of symmetry properties Microwave linear amplifier and oscillator design using solid-state circuits such as varactor devices and transistors FOUNDATIONS FOR MICROWAVE ENGINEERING,
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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices - Part 4-1: Microwave Diodes and Transistors - Microwave Field Effect Transistors - Blank Detail Specification
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Supplier: Accuris
Description: Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
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Supplier: Accuris
Description: Semiconductor devices - Discrete devices Part 4: Microwave diodes and transistors
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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices - Part 4-2: Microwave Diodes and Transistors - Integrated-Circuit Microwave Amplifiers - Blank Detail Specifications
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.0 dB at 6 GHz Hermetically
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.0 dB at 6 GHz Hermetically
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6
- Package Type: Other
- Transistor Type: Bipolar RF Transistors
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Supplier: Richardson RFPD
Description: The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch chip. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band
- Actuator Type: SP4T, Other
- Frequency Range: 0.0 to 8000 MHz
- Insertion Loss: 1.6 dB
- Isolation (Port to Port): 45 dB
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Supplier: Richardson RFPD
Description: The MMS006AA device is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT), high isolation single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) chip. The switch delivers over 40 dB of isolation across
- Actuator Type: SPDT, Other
- Frequency Range: 0.0 to 20000 MHz
- Insertion Loss: 2 dB
- Isolation (Port to Port): 40 dB
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Supplier: Richardson RFPD
Description: Bm through path, 18 dBm terminated path, and 30 dBm hot switching at the RF common port. The ADRF5049 requires a dual-supply voltage of +3.3 V and -3.3 V. The device employs complimentary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)
- Actuator Type: SP4T, Other
- Frequency Range: 0.0090 to 45000 MHz
- Insertion Loss: 1.8 dB
- Isolation (Port to Port): 42 dB
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Supplier: CSA Group
Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first
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Description: MICROWAVE POWER TRANSISTOR
- Transistor Type: General Purpose BJT
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Supplier: Richardson RFPD
Description: both the through path and hot switching. The ADRF5025 draws a low current of 14 uA on the positive supply of +3.3 V and 120 uA on negative supply of -3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL
- Actuator Type: SPDT, Other
- Frequency Range: 0.0090 to 44000 MHz
- Insertion Loss: 1.4 dB
- Isolation (Port to Port): 41 dB
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Supplier: ODG (Origin Data Global)
Description: RX1214B300Y - MICROWAVE POWER TR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Supplier: ODG (Origin Data Global)
Description: RZ1214B35YI - MICROWAVE POWER TR
- Package Type: Other
- Polarity: NPN, Other
- Transistor Type: Bipolar RF Transistors
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Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors.
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Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first
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Supplier: CSA Group
Description: IEC 60747-4:2007+A1:2017 Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition
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Supplier: Rochester Electronics
Description: NPN microwave power transistor
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: NPN microwave power transistor
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: NPN microwave power transistor
- Package Type: Other
- Polarity: NPN
- Transistor Type: Power MOSFET
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Supplier: Rochester Electronics
Description: RX1214B300YI - BiPolar microwave power transistor, SOT439A
- Package Type: Other
- Transistor Type: Bipolar RF Transistors, Power MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Microwave Technology Inc. Win Source Part Number: 790306-MWT-1789SB Packaging: Reel package Package: TO-243AA Current Rating: 440mA Frequency: 500MHz ~ 4GHz Current - Test: 440mA Gain: 18dB Transistor Type: MESFET Voltage - Test: 6.5V Noise
- Package Type: SOT3, SOT89
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobili ty transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Package Type: Other
- Transistor Type: HEMT
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Supplier: Microchip Technology, Inc.
Description: MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while
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Supplier: HUBER+SUHNER AG
Description: PCB-footprint is reduced to the minimum possible. This way, compact designs RF-Energy modules are supported, and cost are reduced additionally. Higher integration densities in applications can be realized. Deviating from 50 ? impedance RFEX supports impedances lower than 50 ?. This way, the
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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Package Type: Other
- Transistor Grade / Operating Range: Military
- Transistor Type: HEMT, PHEMT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40120P is an unmatched, gallium-nitride (GaN), high-electron-mobili ty transistor (HEMT). The CGH40120P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
- Operating Frequency: 3000 MHz
- Output Power: 120 watts
- Package Type: Other
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Supplier: Qorvo
Description: Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Operating Frequency: 0.0 to 20000 MHz
- Package Type: Other
- Power Gain: 11 dB
- Transistor Grade / Operating Range: Military
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Description: Innovacera TO-247 Ceramic Insulating Sheet is designed to optimize thermal management in discrete semiconductors, including MOSFETs, IGBTs, and transistors. TO-247 Ceramic Insulating Sheet is a high-performance thermal interface product and was made by Alumina Ceramic (Al2O3) and Aluminum
- Applications: Electronics / RF-Microwave, Other
- Performance Features: Specialty / Other
- Specialty Ceramic Type: Aluminum Nitride
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Description: -speed rail, new energy vehicles, etc., and are a crucial core heat dissipation material for silicon carbide power modules (SiC MOSFET) and insulated gate bipolar transistors (IGBT).
- Applications: Electrical / HV Parts, Electronics / RF-Microwave
- Material Type: Silicon Nitride
- Performance Features: Sintered / Fired
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more about our RF & Microwave testing capabilities, contact your local sales representative. (read more)
Browse RF MOSFET Transistors Datasheets for Richardson RFPD -
Overview of RF High?Speed Rotary Joint Slip Ring Our high?speed radio frequency rotary joints are precision coaxial microwave components designed for 360° uninterrupted rotating equipment, solving stable high?frequency signal transmission challenges in rotating (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd.
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Microwave Field-Effect Transistors: Theory, Design, and Applications
Microwave Field-Effect Transistors: Theory, Design, and Applications. This text covers the use of devices in microwave circuits and includes topics such as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, S-parameter mapping, narrow- and broadband
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
GaAs monolithic microwave integrated circuits (MMICs) are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to damage from high-power spurious electromagnetic (EM) radiation, either from microwave transmitters
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Cadence, Mentor top 52-week highs as Magma slips After three of EDA's largest companies posted quarterly earnings this week, investors reacted, rewarding Cadence Design Systems and Mentor Graphics while punishing Magma Design Automation. Tool claims first transistor-level closed loop PLL
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
the Enviro Advanced Dry Strip System, is a multi-chamber, single-wafer photoresist stripper and polymer-removal tool that incorporates both microwave downstream and low-energy plasma. Singapore's STATS lowers forecast for next two quarters SINGAPORE -- Citing a slowdown in its IC-packaging, assembly
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Measuring methods for the characterization of microwave power transistors
The rustling number measurements are fª a component characterization for empirical modeling of microwave transistors typical.
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Computer models for microwave power transistors
In spite of the betr~ichtlichen effort that is driven today by the characterization of microwave transistors , the dispersion effects through the Eigenerw ~ irmung are and through on that Transistoroberfl ~ iche trapped Ladungstr ~ iger with herk6mmlicher microwave measuring technique …
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Electronic components
The described problems are particularly embossed indeed for MO-modules, but limited not to this technology: In particular microwave transistors with slight dimensions and integrated bipolar transistors are also jeopardized through electrostatic discharges.
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Chain amplifier with Bipolar silicon transistors: 250 MHzes to 6 GHzes
The h6chste cut-off frequency of bipolar microwave transistors , the ~-cut-off-frequency, to exploit itself with this series-parallel-circuit of the transistors 1/iBt optimally.
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Semiconductor devices
HF and microwave transistors are often realized to satisfy these demands through connecting several's very narrow emitter finger (so-called strip transistors).
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Input stages extremely broadband Repeater for digital message-transmission optical systems
So, [20] can be achieved 8,5 dB Verstfrkung in 3-dBs bandwidth of 250 MHzes until 6 GHzes with the Si microwave transistor hp 35820 A (fr = = 4,8 GHzes) with a Kettenverst ~ irker, ihrend w ~, see an …
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Sources of noise in the standards of frequency
The optimization of the performances of the source n6cessite the measurement of the caract6ristiques of the microwave transistors and the mod61isation of their behavior in the oscillatrice loop [ 30, 31 ].
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Non linear circuits
The articles of E Temcamani and al. on the one hand and of P. Fellon and al. on the other hand and that milked them also to active devices, present three types of microwave transistors being able &re of excellent candidates …
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Microwave Field-Effect Transistors: Theory, design and applications
Chapter 8 contains a review of the means by which microwave transistors can be packaged hermetically whilst retaining acceptable performance.