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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices - Part 4-1: Microwave Diodes and Transistors - Microwave Field Effect Transistors - Blank Detail Specification
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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices - Part 4-2: Microwave Diodes and Transistors - Integrated-Circuit Microwave Amplifiers - Blank Detail Specification
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Supplier: Accuris
Description: Semiconductor Devices - Discrete Devices - Part 4-2: Microwave Diodes and Transistors - Integrated-Circuit Microwave Amplifiers - Blank Detail Specifications
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Supplier: Accuris
Description: Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors
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Description: Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors.
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Supplier: CSA Group
Description: Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first
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Description: "FOUNDATIONS FOR MICROWAVE ENGINEERING, Second Edition, covers the major topics of microwave engineering. Its presentation defines the accepted standard for both advanced undergraduate and graduate level courses on microwave engineering. An essential reference book for the
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Supplier: Richardson RFPD
Description: The MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch chip. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band
- Frequency Range: 0 to 8,000 MHz
- Insertion Loss: 1.6 dB
- Isolation (Port to Port): 45 dB
- Switching Speed: 0.000085 ms
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION / NPN EPITAXIAL SILICON RF Transistor FOR MICROWAVE HIGH-GAIN AMPLIFICATION Product overview: 2SC5409 from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification,
- Transistor Type: Bipolar RF Transistors
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Supplier: Infineon Technologies AG
Description: HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz Hermetically sealed
- IC(max): 50 milliamps
- VCEO: 4 volts
- fT: 40,000 MHz
- Transistor Type: Bipolar RF Transistors
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Description: MICROWAVE POWER TRANSISTOR
- Features: Bulk Pack, Other
- Transistor Type: General Purpose BJT
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Supplier: ODG (Origin Data Global)
Description: RZ1214B35YI - MICROWAVE POWER TR
- IC(max): 3,000 milliamps
- VCEO: 60 volts
- Power Gain: 7 dB
- Output Power: 125 watts
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Supplier: Richardson RFPD
Description: CGHV59070P is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
- Power Gain: 14.3 dB
- Output Power: 70 watts
- Operating Frequency: 4,400 to 5,900 MHz
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: Microwave Technology Inc. Win Source Part Number: 790306-MWT-1789SB Packaging: Reel package Package: TO-243AA Current Rating: 440mA Frequency: 500MHz ~ 4GHz Current - Test: 440mA Gain: 18dB Transistor Type: MESFET Voltage - Test: 6.5V Noise Figure: 1.3dB Power - Output:
- Package Type: SOT3, SOT89
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Supplier: Rochester Electronics
Description: RX1214B300YI - BiPolar microwave power transistor, SOT439A
- Transistor Type: Bipolar RF Transistors, Power MOSFET
- Features: Other
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Supplier: CSA Group
Description: IEC 60747-7:2010 gives the requirements applicable to the following sub-categories of bipolar transistors excluding microwave transistors. - Small signal transistors (excluding switching and microwave applications); - Linear power transistors (excluding
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Supplier: Heilind Electronics, Inc.
Description: Connectors Sockets - IC, Transistor & Component
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV59070 is an internally matched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency,
- Power Gain: 12 dB
- Output Power: 70 watts
- Operating Frequency: 4,500 to 5,900 MHz
- Transistor Type: HEMT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGHV40050 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40050, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high-efficiency, high-gain
- Power Gain: 16 dB
- Output Power: 50 watts
- Operating Frequency: 4,000 MHz
- Transistor Type: HEMT
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Supplier: Wolfspeed
Description: Wolfspeed’s CGH40025 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40025, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
- Output Power: 25 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Wolfspeed
Description: Wolfspeed’s CG2H40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain
- Output Power: 10 watts
- Operating Frequency: 6,000 MHz
- Transistor Type: HEMT
- Features: Other
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Supplier: Richardson RFPD
Description: CMPA5259025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CMPA5259025F ideal for 5.2 - 5.9 GHz Radar amplifier
- Frequency Range: 5,200 to 5,900 MHz
- Maximum Gain: 31.9 dB
- Minimum Operating Voltage: 28 volts
- Maximum Operating Voltage: 28 volts
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Supplier: Richardson RFPD
Description: The PHA2731-190M is a Class C microwave power amplifier module specifically designed for S-Band radar pulsed power applications where high efficiency and saturated power are required. The module incorporates two in-phase combined common base hybrid power transistors and is input and
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Supplier: Microchip Technology, Inc.
Description: The MMS006PP3 is a DC-to-20 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron-mobility transistor (pHEMT) single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The MMS006AA is
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Supplier: Microchip Technology, Inc.
Description: is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while
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Supplier: Microchip Technology, Inc.
Description: MMA142AA is a self-biased (requiring only a single positive supply, using on-chip choke), gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 1 GHz and 34 GHz. It
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Supplier: Qorvo
Description: Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 11.5 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 12 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 10.4 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: Qorvo
Description: Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Features: Other
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Supplier: HUBER+SUHNER AG
Description: supported, and cost are reduced additionally. Higher integration densities in applications can be realized. Deviating from 50 Ω impedance RFEX supports impedances lower than 50 Ω. This way, the transistor output matching can be simplified (lower cost), bandwidth can be increased, and losses
- Features: Circular / Cylindrical Connector, RF and Microwave Connector
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Supplier: Skyworks Solutions, Inc.
Description: Skyworks SE5003L1-R is a 5 GHz Microwave Monolithic Integrated Circuit (MMIC) Power Amplifier (PA) with superior output power, linearity, and efficiency. These features make the SE5003L1-R ideal for Wireless Local Area Network (WLAN IEEE802.11ac) applications. The device is fabricated using
- Frequency Range: 5,150 to 5,850 MHz
- Minimum Gain: 32 dB
- Maximum Gain: 32 dB
- Minimum Operating Voltage: 5 volts
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more about our RF & Microwave testing capabilities, contact your local sales representative. (read more)
Browse RF MOSFET Transistors Datasheets for Richardson RFPD -
Overview of RF High?Speed Rotary Joint Slip Ring Our high?speed radio frequency rotary joints are precision coaxial microwave components designed for 360° uninterrupted rotating equipment, solving stable high?frequency signal transmission challenges in rotating (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd. -
microwave signals. 2. Superior RF Transmission Performance High-stability RF transmission is (read more)
Browse RF Transistors Datasheets for JiuJiang Ingiant Technology Co., Ltd.
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Microwave Field-Effect Transistors: Theory, Design, and Applications
Microwave Field-Effect Transistors: Theory, Design, and Applications. This text covers the use of devices in microwave circuits and includes topics such as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, S-parameter mapping, narrow- and broadband
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Microwave RF: GaN Devices Raising the Output-Power Performance Bar
Solid-state power comes in many forms, although the fastest-growing high-frequency, high-power semiconductor technology may be based on gallium nitride (GaN). GaN power transistors have long been the active-device building blocks for linear and compressed power amplifiers in L- and S-band military
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Microwave Journal: Modelithics Releases the Modelithics Qorvo GaN Library v21.4.5
Version 21.4.5 of the Modelithics Qorvo GaN Library includes a total of 82 models containing 59 packaged power models, 17 GaN die power transistor products and six small-signal models. This release offers a non-linear model for the Qorvo QPD1028L, a 750 W (P3dB) discrete GaN on SiC HEMT using
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Understanding the Phenomenon of High-Power Pulse Recovery in GaN LNAs
The Gallium Nitride (GaN) high electron mobility. transistor (HEMT) is well known for its use in microwave and millimeter wave power amplifiers due to its high breakdown voltage and ability to handle high RF power. Recently, GaN technology has also been used to create low noise amplifiers (LNAs
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AN3010: An Examination of Recovery Time of an Integrated Limiter/LNA
GaAs monolithic microwave integrated circuits (MMICs) are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to damage from high-power spurious electromagnetic (EM) radiation, either from microwave transmitters
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
Cadence, Mentor top 52-week highs as Magma slips After three of EDA's largest companies posted quarterly earnings this week, investors reacted, rewarding Cadence Design Systems and Mentor Graphics while punishing Magma Design Automation. Tool claims first transistor-level closed loop PLL
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EETimes.com | Electronics Industry News for EEs & Engineering Managers
the Enviro Advanced Dry Strip System, is a multi-chamber, single-wafer photoresist stripper and polymer-removal tool that incorporates both microwave downstream and low-energy plasma. Singapore's STATS lowers forecast for next two quarters SINGAPORE -- Citing a slowdown in its IC-packaging, assembly
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Measuring methods for the characterization of microwave power transistors
The rustling number measurements are fª a component characterization for empirical modeling of microwave transistors typical.
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Computer models for microwave power transistors
In spite of the betr~ichtlichen effort that is driven today by the characterization of microwave transistors , the dispersion effects through the Eigenerw ~ irmung are and through on that Transistoroberfl ~ iche trapped Ladungstr ~ iger with herk6mmlicher microwave measuring technique …
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Electronic components
The described problems are particularly embossed indeed for MO-modules, but limited not to this technology: In particular microwave transistors with slight dimensions and integrated bipolar transistors are also jeopardized through electrostatic discharges.
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Chain amplifier with Bipolar silicon transistors: 250 MHzes to 6 GHzes
The h6chste cut-off frequency of bipolar microwave transistors , the ~-cut-off-frequency, to exploit itself with this series-parallel-circuit of the transistors 1/iBt optimally.
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Semiconductor devices
HF and microwave transistors are often realized to satisfy these demands through connecting several's very narrow emitter finger (so-called strip transistors).
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Input stages extremely broadband Repeater for digital message-transmission optical systems
So, [20] can be achieved 8,5 dB Verstfrkung in 3-dBs bandwidth of 250 MHzes until 6 GHzes with the Si microwave transistor hp 35820 A (fr = = 4,8 GHzes) with a Kettenverst ~ irker, ihrend w ~, see an …
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Sources of noise in the standards of frequency
The optimization of the performances of the source n6cessite the measurement of the caract6ristiques of the microwave transistors and the mod61isation of their behavior in the oscillatrice loop [ 30, 31 ].
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Non linear circuits
The articles of E Temcamani and al. on the one hand and of P. Fellon and al. on the other hand and that milked them also to active devices, present three types of microwave transistors being able &re of excellent candidates …
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Microwave Field-Effect Transistors: Theory, design and applications
Chapter 8 contains a review of the means by which microwave transistors can be packaged hermetically whilst retaining acceptable performance.